US6258675B1
Expired / Lapsed
US
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High K gate electrode
Assignee: Advanced Micro Devices Inc
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Filing: 1997-12-18
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Granted: 2001-07-10
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Expires: 2017-12-18
Abstract
Abstract A semiconductor structure with a high-K insulative layer. An insulative layer is disposed on a silicon substrate and includes a first nitride layer and a high-K layer. A gate is disposed on the insulative layer. The insulative layer further includes sidewalls extending at least flush with corresponding sidewalls of the gate. Source and drain regions are disposed within the substrate adjacent to the insulative layer.
Inventors
- 👤 Mark I. Gardner
- 👤 H. James Fulford
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 01:15
CPC Classifications
H; H10; H10D; H10D64/00; H10D64/01; H10D64/013; H10D64/01302; H10D64/01332; H10D64/01336; H10D64/01342; H10D64/015; H10D64/60; H10D64/66; H10D64/68; H10D64/681; H10D64/685; H10D64/691; H10D64/693
Claims Analysis
Total Claims: 28
Claim 1
Independent Claim
135 words
A method for forming a semiconductor structure, comprising the steps of: forming an insulative layer on a substrate, the insulative layer composed of a first insulative layer disposed on the substrate, a second insulative layer having a high K value disposed on the first insulative layer and a third insulative layer disposed on the second insulative layer; forming a gate electrode structure on the insulative layer, the gate electrode structure composed of a gate electrode, having a top wall and side walls, and a plurality of insulative members disposed on the top wall and sidewalls of the gate electrode; masking a portion of the insulative layer with the gate electrode structure; and removing portions of the insulative layer such that the insulative layer has sidewalls that are flush with the sidewalls of the gate electrode.
Claim 2
Independent Claim
135 words
A method for forming a semiconductor structure, comprising the steps of: forming an insulative layer on a substrate, the insulative layer composed of a first insulative layer disposed on the substrate, a second insulative layer having a high K value disposed on the first insulative layer and a third insulative layer disposed on the second insulative layer; forming a gate electrode structure on the insulative layer, the gate electrode structure composed of a gate electrode, having a top wall and side walls, and a plurality of insulative members disposed on the top wall and sidewalls of the gate electrode; masking a portion of the insulative layer with the gate electrode structure; and removing portions of the insulative layer such that the insulative layer has sidewalls that are flush with the sidewalls of the gate electrode.
Claim 3
Dependent Claim
50 words
The method of claim 1 , wherein the step of forming the gate electrode structure includes the steps of: forming a polysilicon gate electrode; implanting arsenic ions in the polysilcon gate electrode; and oxidizing the gate electrode to form the insulative members at each of the edges of the gate.
Claim 4
Dependent Claim
39 words
The method of claim 2 , wherein the step of oxidizing the gate electrode includes using oxide tube growth at 700-1000° C. in an oxygen ambient to form silicon dioxide insulative members having a thickness of about 30 angstroms.
Claim 5
Dependent Claim
52 words
The method of claim 3 , further comprising the step of using the gate electrode structure to form lightly doped regions in the substrate and in between the vertical boundaries defining opposing edges of the gate electrode structure and the insulative layer, thereby reducing the channel length under the gate electrode structure.
Claim 6
Dependent Claim
51 words
The method of claim 4 , wherein the step of using the gate electrode structure to form lightly doped regions includes the step of performing an ion implantation to form source and drain regions within the substrate with an implant energy level ranging from about 2 KeV to about 80 KeV.
Claim 7
Dependent Claim
26 words
The method of claim 5 , further comprising the step of performing a rapid thermal anneal after the step of implanting ions in the semiconductor structure.
Claim 8
Dependent Claim
42 words
The method of claim 6 , wherein the step of forming the insulative layer includes forming a first nitride layer on the substrate, forming a high-K layer on the first nitride layer and forming a second nitride layer on the high-K layer.
Claim 9
Dependent Claim
26 words
The method of claim 7 , wherein the step of forming a high-K layer includes materials from the group consisting of titanium oxide and tantalum pentaoxide.
Claim 10
Dependent Claim
32 words
The method of claim 8 , further comprising the step of forming a metal silicide in a portion of the first nitride layer adjacent to each side wall of the insulative layer.
Claim 11
Dependent Claim
50 words
The method of claim 1 , wherein the step of forming the gate electrode structure include the steps of: forming a polysilicon gate electrode; implanting boron ions in the polysilcon gate electrode; and oxidizing the gate electrode to form the insulative members at each of the edges of the gate.
Claim 12
Dependent Claim
38 words
the method of claim 10 , wherein the step of oxidizing the gate electrode includes using oxide tube growth at 700-1000° C. in an oxygen ambient to form silicon dioxide members having a thickness of about 30 angstroms.
Claim 13
Dependent Claim
52 words
The method of claim 11 , further comprising the step of using the gate electrode structure to form lightly doped regions in the substrate and in between the vertical boundaries defining opposing edges of the gate electrode structure and the insulative layer, thereby reducing the channel length under the gate electrode structure.
Claim 14
Dependent Claim
51 words
The method of claim 12 , wherein the step of using the gate electrode structure to form lightly doped regions includes the step of performing an ion implantation to form source and drain regions within the substrate with an implant energy level ranging from about 2 KeV to about 80 KeV.
Claim 15
Dependent Claim
42 words
The method of claim 13 , wherein the step of forming the insulative layer includes forming a first nitride layer on the substrate, forming a high-K layer on the first nitride layer and forming a second nitride layer on the high-K layer.
Claim 16
Dependent Claim
26 words
The method of claim 14 , wherein the step of forming a high-K layer includes materials from the group consisting of titanium oxide and tantalum pentaoxide.
Claim 17
Dependent Claim
32 words
The method of claim 15 , further comprising the step of forming a metal silicide in a portion of the first nitride layer adjacent to each side wall of the insulative layer.
Claim 18
Dependent Claim
63 words
The method of claim 3 , wherein the insulative members are formed having a substantially rectangular shape, the insulative members on the side walls of the gate electrode having a top surface parallel with the top wall of the gate electrode, thereby forming vertical sidewalls on the insulative layer flush with the gate electrode structure upon removal of portions of the insulative layer.
Claim 19
Dependent Claim
41 words
The method of claim 17 , wherein the insulative member on the top wall of the gate electrode is substantially rectangular in shape and extends flush with the outer edges of the insulative members on the sidewalls of the gate electrode.
Claim 20
Independent Claim
111 words
A method for forming a device comprising: forming a gate electrode layer on a substrate, the gate electrode layer comprising at least one layer, one of the at least one layer having a high K value; forming a gate on the gate electrode layer, the gate having two side edges and a top edge, and masking a portion of the gate electrode layer, oxidizing the gate to form an oxidation layer at each of the edges of the gate and then, removing the gate electrode layer except the portion of the gate electrode layer masked by the gate, and removing the oxidation layer at each of the edges of the gate.
Claim 21
Independent Claim
111 words
A method for forming a device comprising: forming a gate electrode layer on a substrate, the gate electrode layer comprising at least one layer, one of the at least one layer having a high K value; forming a gate on the gate electrode layer, the gate having two side edges and a top edge, and masking a portion of the gate electrode layer, oxidizing the gate to form an oxidation layer at each of the edges of the gate and then, removing the gate electrode layer except the portion of the gate electrode layer masked by the gate, and removing the oxidation layer at each of the edges of the gate.
Claim 22
Dependent Claim
25 words
The method of claim 19 , further comprising performing an ion implantation to form source and drain regions within the substrate adjacent to the gate.
Claim 23
Dependent Claim
13 words
The method of claim 20 , further comprising performing a rapid thermal anneal.
Claim 24
Dependent Claim
16 words
The method of claim 19 , wherein removing the oxidation layer comprises etching the oxidation layer.
Claim 25
Dependent Claim
23 words
The method of claim 20 , further comprising forming a metal silicide within the substrate adjacent to each side edge of the gate.
Claim 26
Dependent Claim
18 words
The method of claim 19 , wherein removing the gate electrode layer comprises etching the gate electrode layer.
Claim 27
Dependent Claim
24 words
The method of claim 19 , wherein the at least one layer includes a nitride layer below the layer having the high K value.
Claim 28
Dependent Claim
25 words
The method of claim 25 , wherein the at least one layer includes a second nitride layer above the layer having the high K value.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2004-07-09 | 2005-01-08 | 2005-07-10 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2008-07-09 | 2009-01-08 | 2009-07-10 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2012-07-09 | 2013-01-08 | 2013-07-10 | $7700.00 | Window Closed / Lapsed |