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US5866473A
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Method of manufacturing a polysilicon gate having a dimension below the photolithography limitation
Assignee: GlobalFoundries Inc
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Filing: 1997-10-31
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Granted: 1999-02-02
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Expires: 2017-10-31
Abstract
Abstract A method of manufacturing an MOS transistor having a gate length dimension less than the dimension available by methods available with conventional manufacturing methods that are limited by optical diffraction in photolithography. The method includes forming a polysilicon gate structure on a gate oxide layer, forming a nitrogen-doped layer on the polysilicon gate structure, forming selected depth oxide sidewalls on the polysilicon gate structure and etching the nitrogen-doped layer and the oxide sidewalls.
Inventors
- 👤 Qi Xiang
- 👤 Ming-Ren Lin
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-02 19:13
CPC Classifications
H; H10; H10P; H10P30/00; H10P30/20; H10P30/202; H10P30/204; H10D; H10D30/00; H10D30/01; H10D30/021; H10D30/0223; H10D64/00; H10D64/01; H10D64/013; H10D64/01302; H10D64/01304; H10D64/01326; H10D64/20; H10D64/27; H10D64/311; H10D64/411; H10D64/511; H10D64/517; H10D64/518; H10P30/208
Claims Analysis
Total Claims: 5
Claim 1
Independent Claim
67 words
A method of manufacturing an MOS transistor comprising: forming a gate oxide layer on a semiconductor substrate; forming a polysilicon gate structure on the gate oxide layer; forming a nitrogen-doped layer in a top surface of the polysilicon gate structure; forming an oxide layer on the polysilicon gate structure to a selected depth; removing the nitrogen-doped layer; and removing the oxide layer from the polysilicon gate structure.
Claim 2
Independent Claim
67 words
A method of manufacturing an MOS transistor comprising: forming a gate oxide layer on a semiconductor substrate; forming a polysilicon gate structure on the gate oxide layer; forming a nitrogen-doped layer in a top surface of the polysilicon gate structure; forming an oxide layer on the polysilicon gate structure to a selected depth; removing the nitrogen-doped layer; and removing the oxide layer from the polysilicon gate structure.
Claim 3
Dependent Claim
15 words
The method of claim 1 wherein forming a nitrogen-doped layer is accomplished by nitrogen implantation.
Claim 4
Dependent Claim
28 words
The method of claim 2 wherein the nitrogen implantation is accomplished at a dosage in the range of 10 14 to 10 15 ions per cm 2 .
Claim 5
Dependent Claim
23 words
The method of claim 3 wherein the nitrogen implantation is accomplished at an energy level in the range of 5 to 15 KeV.
References Cited (Backward Citations)
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2002-02-01 | 2002-08-03 | 2003-02-02 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2006-02-01 | 2006-08-03 | 2007-02-02 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2010-02-01 | 2010-08-03 | 2011-02-02 | $7700.00 | Window Closed / Lapsed |