US7026694B2
Expired / Lapsed
US
⏱️ 0.0 years remaining
Lanthanide doped TiOx dielectric films by plasma oxidation
Assignee: Micron Technology Inc
•
Filing: 2004-08-31
•
Granted: 2006-04-11
•
Expires: 2024-08-31
Abstract
Abstract A dielectric film containing lanthanide doped TiO x and a method of fabricating such a dielectric film produce a reliable gate dielectric having an equivalent oxide thickness thinner than attainable using SiO 2 . A dielectric film is formed by ion assisted electron beam evaporation of Ti, electron beam evaporation of a lanthanide selected from a group consisting of Nd, Tb, and Dy, and oxidation of the evaporated Ti/lanthanide film in a Kr/oxygen plasma. The growth rate is controlled to provide a dielectric film having a lanthanide content ranging from about five to about forty percent of the dielectric film. These dielectric films containing lanthanide doped TiO x are amorphous and thermodynamically stable such that the lanthanide doped TiO x will have minimal reactions with a silicon substrate or other structures during processing.
Inventors
- 👤 Kie Y. Ahn
- 👤 Leonard Forbes
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 00:48
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/60; H10P14/63; H10P14/6302; H10P14/6304; H10P14/6314; C; C23; C23C; C23C14/00; C23C14/06; C23C14/14; C23C14/22; C23C14/54; C23C14/548; C23C14/58; C23C14/5826; C23C14/5846; C23C14/5853; H10D; H10D64/00; H10D64/01; H10D64/013; H10D64/01302; H10D64/01332; H10D64/01336; H10D64/01342; H10D64/01346; H10D64/60; H10D64/66; H10D64/68; H10D64/691; H10P14/6319; H10P14/69; H10P14/692; H10P14/6938; H10P14/6939; H10P14/69394; H10P32/00; H10P32/20; H10P14/69396; H10P14/69397
Claims Analysis
Total Claims: 33
Claim 1
Independent Claim
40 words
An electronic device comprising: a substrate; and a dielectric layer disposed on the substrate, the dielectric layer containing lanthanide doped TiO x formed by plasma oxidation of an ion assisted electron beam evaporated film containing Ti doped with the lanthanide.
Claim 2
Dependent Claim
40 words
An electronic device comprising: a substrate; and a dielectric layer disposed on the substrate, the dielectric layer containing lanthanide doped TiO x formed by plasma oxidation of an ion assisted electron beam evaporated film containing Ti doped with the lanthanide.
Claim 3
Dependent Claim
33 words
The electronic device of claim 1 , wherein the dielectric layer containing lanthanide doped TiO x includes TiO x doped with a lanthanide selected from a group consisting of Nd, Tb, and Dy.
Claim 4
Dependent Claim
20 words
The electronic device of claim 1 , wherein the dielectric layer is configured as a gate dielectric in a transistor.
Claim 5
Dependent Claim
16 words
The electronic device of claim 1 , wherein the dielectric layer is configured in a memory.
Claim 6
Dependent Claim
17 words
The electronic device of claim 1 , wherein the electronic device is configured in an electronic system.
Claim 7
Dependent Claim
78 words
A transistor, comprising: a source region; a drain region; a body region disposed on a substrate, the body region located between the source region and the drain region; a dielectric layer containing lanthanide doped TiO x formed by plasma oxidation of an ion assisted electron beam evaporated film containing Ti doped with the lanthanide, the dielectric layer disposed on the body region between the source region and the drain region, and a gate coupled to the dielectric layer.
Claim 8
Dependent Claim
78 words
A transistor, comprising: a source region; a drain region; a body region disposed on a substrate, the body region located between the source region and the drain region; a dielectric layer containing lanthanide doped TiO x formed by plasma oxidation of an ion assisted electron beam evaporated film containing Ti doped with the lanthanide, the dielectric layer disposed on the body region between the source region and the drain region, and a gate coupled to the dielectric layer.
Claim 9
Dependent Claim
32 words
The transistor of claim 6 , wherein the dielectric layer containing lanthanide doped TiO x includes TiO x doped with a lanthanide selected from a group consisting of Nd, Tb, and Dy.
Claim 10
Dependent Claim
13 words
The transistor of claim 6 , wherein the dielectric layer is substantially amorphous.
Claim 11
Dependent Claim
23 words
The transistor of claim 6 , wherein the dielectric layer exhibits a dielectric constant in the range from about 50 to about 100.
Claim 12
Dependent Claim
27 words
The transistor of claim 6 , wherein the dielectric layer exhibits an equivalent oxide thickness (teq) in the range from about 1.5 Angstroms to about 5 Angstroms.
Claim 13
Dependent Claim
22 words
The transistor of claim 6 , wherein the dielectric layer exhibits an equivalent oxide thickness (teq) of less than about 3 Angstroms.
Claim 14
Dependent Claim
97 words
A transistor, comprising: a source region; a drain region; a body region disposed on a substrate, the body region located between the source region and the drain region; a gate dielectric disposed on the body region; a floating gate disposed on the gate dielectric; a control gate; and a floating gate dielectric interposed between the floating gate and the control gate, wherein at least one of the gate dielectric and the floating gate dielectric contains lanthanide doped TiO x formed by plasma oxidation of an ion assisted electron beam evaporated film containing Ti doped with the lanthanide.
Claim 15
Dependent Claim
97 words
A transistor, comprising: a source region; a drain region; a body region disposed on a substrate, the body region located between the source region and the drain region; a gate dielectric disposed on the body region; a floating gate disposed on the gate dielectric; a control gate; and a floating gate dielectric interposed between the floating gate and the control gate, wherein at least one of the gate dielectric and the floating gate dielectric contains lanthanide doped TiO x formed by plasma oxidation of an ion assisted electron beam evaporated film containing Ti doped with the lanthanide.
Claim 16
Dependent Claim
32 words
The transistor of claim 12 , wherein the dielectric layer containing lanthanide doped TiO x includes TiO x doped with a lanthanide selected from a group consisting of Nd, Tb, and Dy.
Claim 17
Dependent Claim
17 words
The transistor of claim 12 , wherein the gate dielectric contains the lanthanide doped TiO x .
Claim 18
Dependent Claim
18 words
The transistor of claim 12 , wherein the floating gate dielectric contains the lanthanide doped TiO x .
Claim 19
Dependent Claim
18 words
The transistor of claim 12 , wherein the lanthanide doped TiOx is formed in a substantially amorphous layer.
Claim 20
Dependent Claim
55 words
A capacitor, comprising: a first conductive layer disposed on a substrate; a dielectric layer containing lanthanide doped TiOx formed by plasma oxidation of an ion assisted electron beam evaporated film containing Ti doped with the lanthanide, the dielectric layer disposed on the first conductive layer; and a second conductive layer disposed on the dielectric layer.
Claim 21
Dependent Claim
55 words
A capacitor, comprising: a first conductive layer disposed on a substrate; a dielectric layer containing lanthanide doped TiOx formed by plasma oxidation of an ion assisted electron beam evaporated film containing Ti doped with the lanthanide, the dielectric layer disposed on the first conductive layer; and a second conductive layer disposed on the dielectric layer.
Claim 22
Dependent Claim
32 words
The capacitor of claim 17 , wherein the dielectric layer containing lanthanide doped TiO x includes TiO x doped with a lanthanide selected from a group consisting of Nd, Tb, and Dy.
Claim 23
Dependent Claim
13 words
The capacitor of claim 17 , wherein the dielectric layer is substantially amorphous.
Claim 24
Dependent Claim
23 words
The capacitor of claim 17 , wherein the dielectric layer exhibits a dielectric constant in the range from about 50 to about 100.
Claim 25
Dependent Claim
117 words
A memory having a memory array, the memory comprising: a number of transistors, each transistor having a source region, a drain region, and a gate, at least one transistor including a dielectric layer disposed on a substrate, the dielectric layer containing lanthanide doped TiO x formed by plasma oxidation of an ion assisted electron beam evaporated film containing Ti doped with the lanthanide; a number of word lines coupled to a number of the gates of the number of transistors; a number of source lines coupled to a number of the source regions of the number of transistors; and a number of bit lines coupled to a number of the drain regions of the number of transistors.
Claim 26
Dependent Claim
117 words
A memory having a memory array, the memory comprising: a number of transistors, each transistor having a source region, a drain region, and a gate, at least one transistor including a dielectric layer disposed on a substrate, the dielectric layer containing lanthanide doped TiO x formed by plasma oxidation of an ion assisted electron beam evaporated film containing Ti doped with the lanthanide; a number of word lines coupled to a number of the gates of the number of transistors; a number of source lines coupled to a number of the source regions of the number of transistors; and a number of bit lines coupled to a number of the drain regions of the number of transistors.
Claim 27
Dependent Claim
31 words
The memory of claim 21 , the dielectric layer containing lanthanide doped TiO x includes TiO x doped with a lanthanide selected from a group consisting of Nd, Tb, and Dy.
Claim 28
Dependent Claim
13 words
The memory of claim 21 , wherein the dielectric layer is substantially amorphous.
Claim 29
Dependent Claim
23 words
The memory of claim 21 , wherein the dielectric layer exhibits a dielectric constant in the range from about 50 to about 110.
Claim 30
Dependent Claim
136 words
An electronic system, comprising: a processor; a system bus; and a memory coupled to the processor by the system bus, the memory having a memory array, the memory including: a number of transistors, each transistor disposed on a transistor, each transistor having a source region, a drain region, and a gate, at least one transistor including a dielectric layer containing lanthanide doped TiO x formed by plasma oxidation of an ion assisted electron beam evaporated film containing Ti doped with the lanthanide; a number of word lines coupled to a number of the gates of the number of transistors; a number of source lines coupled to a number of the source regions of the number of transistors; and a number of bit lines coupled to a number of the drain regions of the number of transistors.
Claim 31
Dependent Claim
136 words
An electronic system, comprising: a processor; a system bus; and a memory coupled to the processor by the system bus, the memory having a memory array, the memory including: a number of transistors, each transistor disposed on a transistor, each transistor having a source region, a drain region, and a gate, at least one transistor including a dielectric layer containing lanthanide doped TiO x formed by plasma oxidation of an ion assisted electron beam evaporated film containing Ti doped with the lanthanide; a number of word lines coupled to a number of the gates of the number of transistors; a number of source lines coupled to a number of the source regions of the number of transistors; and a number of bit lines coupled to a number of the drain regions of the number of transistors.
Claim 32
Dependent Claim
33 words
The electronic system of claim 25 , the dielectric layer containing a TiOx doped with a lanthanide includes TiOx doped with a lanthanide selected from a group consisting of Nd, Tb, and Dy.
Claim 33
Dependent Claim
27 words
The electronic system of claim 25 , wherein the dielectric layer is substantially amorphous having a dielectric constant in the range from about 50 to about 110.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2009-04-10 | 2009-10-10 | 2010-04-11 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2013-04-10 | 2013-10-10 | 2014-04-11 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2017-04-10 | 2017-10-10 | 2018-04-11 | $7700.00 | Window Closed / Lapsed |