US6544875B1
Expired / Lapsed
US
⏱️ 0.0 years remaining
Chemical vapor deposition of silicate high dielectric constant materials
Assignee: Texas Instruments Inc
•
Filing: 2000-01-07
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Granted: 2003-04-08
•
Expires: 2020-01-07
Abstract
Abstract A method of fabricating an electronic device over a semiconductor substrate, the method comprising the steps of: forming a conductive structure over the semiconductor substrate (step 106 of FIG. 1); and forming a layer of high-dielectric constant material between the conductive structure and the semiconductor substrate (step 102 of FIG. 1), the layer of high-dielectric constant material is formed by supplying a gaseous silicon source and a second gaseous material which is comprised of a material selected from the group consisting of: Hf, Zr, La, Y, Sc, Ce and any combination thereof.
Inventors
- 👤 Glen D. Wilk
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 01:00
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/60; H10P14/63; H10P14/6326; H10P14/6328; H10P14/6334; C; C23; C23C; C23C16/00; C23C16/22; C23C16/30; C23C16/40; C23C16/401; C23C16/42; C23C16/56; H10D; H10D64/00; H10D64/01; H10D64/013; H10D64/01302; H10D64/01332; H10D64/01336; H10D64/0134; H10D64/01342; H10D64/60; H10D64/66; H10D64/68; H10D64/691; H10P14/66; H10P14/668; H10P14/6681; H10P14/6682; H10P14/69; H10P14/692; H10P14/6921; H10P14/6928; H10P14/693; H10P14/6934; H10P14/6938; H10P14/6939; H10P14/69396; H10P14/6339; H10P14/69392; H10P14/69395
Claims Analysis
Total Claims: 25
Claim 1
Independent Claim
78 words
A method of fabricating a transistor gate dielectric over a semiconductor substrate, said method comprising the steps of: forming a conductive gate over said semiconductor substrate; and forming a metal silicate gate dielectric between said conductive structure and said semiconductor substrate, said metal silicate gate dielectric is formed by supplying a gaseous silicon source and a second gaseous material which comprises said metal, wherein the metal is selected from the group consisting of: Hf, Zr, and combinations thereof.
Claim 2
Independent Claim
78 words
A method of fabricating a transistor gate dielectric over a semiconductor substrate, said method comprising the steps of: forming a conductive gate over said semiconductor substrate; and forming a metal silicate gate dielectric between said conductive structure and said semiconductor substrate, said metal silicate gate dielectric is formed by supplying a gaseous silicon source and a second gaseous material which comprises said metal, wherein the metal is selected from the group consisting of: Hf, Zr, and combinations thereof.
Claim 3
Dependent Claim
21 words
The method of claim 1 , wherein said metal silicate gate dielectric is formed by also supplying a gaseous oxygen source.
Claim 4
Dependent Claim
26 words
The method of claim 1 , further comprising the step of: subjecting said metal silicate gate dielectric to between 600 and 900 C in an ambient.
Claim 5
Dependent Claim
39 words
The method of claim 3 , wherein said ambient is comprised of a gas selected from the group consisting of: O 2 , O 3 , N 2 , H 2 , NH 3 , and any combination thereof.
Claim 6
Dependent Claim
29 words
The method of claim 1 , wherein said gaseous silicon source is comprised of a gas selected from the group consisting of: silane, disilane, dichlorosilane, and any combination thereof.
Claim 7
Dependent Claim
15 words
The method of claim 5 , wherein said gaseous silicon source includes a carrier gas.
Claim 8
Dependent Claim
28 words
The method of claim 6 , wherein said carrier gas is comprised of a gas selected from the group consisting of: He, N 2 , Ar, and Ne.
Claim 9
Dependent Claim
78 words
The method of claim 1 , wherein said second gaseous material is comprised of a gas consisting of: Zr(OC 4 H 9 ) 4 , Hf(OC 4 H 9 ) 4 , Zr(NO 3 ) 4 , Hf(NO 3 ) 4 , ZrCl 4 , HfCl 4 , ZrI 4 , HfI 4 , ZrBr 4 , HfBr 4 , Zr 2 (OPri) 6 (tmhd) 2 , Hf 2 (OPri) 6 (tmhd) 2 , and any combination thereof.
Claim 10
Dependent Claim
15 words
The method of claim 1 , wherein said second gaseous material is ZrCl 4 .
Claim 11
Dependent Claim
15 words
The method of claim 1 , wherein said second gaseous material is HfCl 4 .
Claim 12
Dependent Claim
19 words
The method of claim 1 , wherein said second gaseous material is Zr 2 (OPri) 6 (tmhd) 2 .
Claim 13
Dependent Claim
19 words
The method of claim 1 , wherein said second gaseous material is Hf 2 (OPri) 6 (tmhd) 2 .
Claim 14
Dependent Claim
19 words
The method of claim 1 , wherein said second gaseous material is Zr(OC 4 H 9 ) 4 .
Claim 15
Dependent Claim
19 words
The method of claim 1 , wherein said second gaseous material is Hf(OC 4 H 9 ) 4 .
Claim 16
Dependent Claim
13 words
The method of claim 1 , wherein said gaseous silicon source is silane.
Claim 17
Dependent Claim
13 words
The method of claim 1 , wherein said gaseous silicon source is dichlorosilane.
Claim 18
Dependent Claim
15 words
The method of claim 2 , wherein said second gaseous material is ZrCl 4 .
Claim 19
Dependent Claim
15 words
The method of claim 2 , wherein said second gaseous material is HfCl 4 .
Claim 20
Dependent Claim
19 words
The method of claim 2 , wherein said second gaseous material is Zr 2 (OPri) 6 (tmhd) 2 .
Claim 21
Dependent Claim
19 words
The method of claim 2 , wherein said second gaseous material is Hf 2 (OPri) 6 (tmhd) 2 .
Claim 22
Dependent Claim
19 words
The method of claim 2 , wherein said second gaseous material is Zr(OC 4 H 9 ) 4 .
Claim 23
Dependent Claim
19 words
The method of claim 2 , wherein said second gaseous material is Hf(OC 4 H 9 ) 4 .
Claim 24
Dependent Claim
14 words
The method of claim 2 , wherein said gaseous s silicon source is silane.
Claim 25
Dependent Claim
13 words
The method of claim 2 , wherein said gaseous silicon source is dichlorosilane.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2006-04-07 | 2006-10-07 | 2007-04-08 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2010-04-07 | 2010-10-07 | 2011-04-08 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2014-04-07 | 2014-10-07 | 2015-04-08 | $7700.00 | Window Closed / Lapsed |