US6127199A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Manufacturing method of active matrix substrate, active matrix substrate and liquid crystal display device
Assignee: Seiko Epson Corp
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Filing: 1998-07-10
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Granted: 2000-10-03
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Expires: 2018-07-10
Abstract
Abstract A method of manufacturing an active matrix substrate is provided that uses a technique of transferring a thin film device. In forming thin film transistors and pixel electrodes on an original substrate before transfer, an insulator film such as an interlayer insulation film or the like, is previously removed before the pixel electrodes are formed. Further, the original substrate is separated by exfoliation to transfer the device to a transfer material to cause the pixel electrodes to partially appear in the surface or the vicinity of the surface of the device. This portion permits application of a voltage to a liquid crystal through the pixel electrode.
Inventors
- 👤 Satoshi Inoue
- 👤 Tatsuya Shimoda
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-04 08:24
CPC Classifications
H; H10; H10D; H10D86/00; H10D86/01; H10D86/021; H10D86/0214; G; G02; G02F; G02F1/00; G02F1/01; G02F1/13; G02F1/133; G02F1/1333; G02F1/1345; G02F1/13454; G02F1/136; G02F1/1362; G02F1/1368; H10D86/40; H10D86/60; H10P; H10P90/00; H10P90/19; H10P90/1904; H10P90/1906; H10P90/1914; H10W; H10W10/00; H10W10/10; H10W10/181; G02F1/13613; H10P72/00; H10P72/70; H10P72/74; H10P72/743; H10P72/7434; H10W70/00; H10W70/099; H10W70/60; H10W72/00; H10W72/071; H10W72/0711; H10W72/07131; H10W90/00; H10W90/701; H10W90/721; H10W90/724
Claims Analysis
Total Claims: 29
Claim 1
Independent Claim
188 words
A method of manufacturing an active matrix substrate comprising a pixel portion including thin film transistors connected to scanning lines and signal lines arranged in a matrix, and pixel electrodes connected to terminals of the thin film transistors, the method comprising the steps of: forming a separation layer on a substrate; forming the thin film transistors over the separation layer; forming an insulation film on the thin film transistors and over the separation layer; selectively removing at least a portion of the insulation film where each of the pixel electrodes is to be formed; forming each of the pixel electrodes on the insulation film and the separation layer in the region where at least a portion of the insulation film has been removed; adhering the thin film transistors to a transfer material with an adhesive layer; producing exfoliation in the separation layer and/or at an interface of the separation layer and the substrate to separate the substrate from the separation layer; and removing any portion of the separation layer remaining on the pixel electrodes to form an active matrix substrate using the transfer material as a new substrate.
Claim 2
Independent Claim
188 words
A method of manufacturing an active matrix substrate comprising a pixel portion including thin film transistors connected to scanning lines and signal lines arranged in a matrix, and pixel electrodes connected to terminals of the thin film transistors, the method comprising the steps of: forming a separation layer on a substrate; forming the thin film transistors over the separation layer; forming an insulation film on the thin film transistors and over the separation layer; selectively removing at least a portion of the insulation film where each of the pixel electrodes is to be formed; forming each of the pixel electrodes on the insulation film and the separation layer in the region where at least a portion of the insulation film has been removed; adhering the thin film transistors to a transfer material with an adhesive layer; producing exfoliation in the separation layer and/or at an interface of the separation layer and the substrate to separate the substrate from the separation layer; and removing any portion of the separation layer remaining on the pixel electrodes to form an active matrix substrate using the transfer material as a new substrate.
Claim 3
Dependent Claim
41 words
The method of manufacturing an active matrix substrate according to claim 1, wherein the step of selectively removing at least a portion of the insulation film comprises forming contact holes for electrically connecting the pixel electrodes to the thin film transistors.
Claim 4
Dependent Claim
29 words
The method of manufacturing an active matrix substrate according to claim 2, further comprising connecting the pixel electrodes directly to an impurity layer which constitutes the thin film transistors.
Claim 5
Dependent Claim
44 words
The method of manufacturing an active matrix substrate according to claim 2, further comprising the steps of: forming electrodes connected to an impurity layer which constitutes the thin film transistors; and connecting the pixel electrodes to the corresponding electrodes connected to the impurity layers.
Claim 6
Dependent Claim
38 words
The method of manufacturing an active matrix substrate according to claim 1, further comprising the step of forming at least one of a color filter and a light shielding film after the step of forming the pixel electrodes.
Claim 7
Dependent Claim
47 words
The method of manufacturing an active matrix substrate according to claim 1, wherein in selectively removing at least a portion of the insulation film, at least a portion of the insulation film is selectively removed from a region where an external connection terminal is to be provided.
Claim 8
Dependent Claim
53 words
The method of manufacturing an active matrix substrate according to claim 6, further comprising the step of forming the external connection terminal as a conductive layer made of a same material as the pixel electrodes or a same material as an electrode connected to an impurity layer which constitutes the thin film transistors.
Claim 9
Independent Claim
198 words
A method of manufacturing an active matrix substrate comprising a pixel portion including thin film transistors connected to scanning lines and signal lines arranged in a matrix, and pixel electrodes connected to terminals of the thin film transistors, the method comprising the steps of: forming a separation layer on a substrate; forming an intermediate layer on the separation layer; forming the thin film transistors on the intermediate layer; forming an insulation film on the thin film transistors and the intermediate layer; selectively removing at least a portion of the insulation film where each of the pixel electrodes is to be formed; forming each of the pixel electrodes on the insulation film and the separation layer in the region where at least a portion of the insulation film is removed; adhering the thin film transistors to a transfer material with an adhesive layer; producing exfoliation in the separation layer and/or at an interface of the separation layer and the substrate to separate the substrate from the separation layer; and removing any portion of the separation layer remaining on the intermediate layer and the pixel electrodes to form an active matrix substrate using the transfer material as a new substrate.
Claim 10
Independent Claim
198 words
A method of manufacturing an active matrix substrate comprising a pixel portion including thin film transistors connected to scanning lines and signal lines arranged in a matrix, and pixel electrodes connected to terminals of the thin film transistors, the method comprising the steps of: forming a separation layer on a substrate; forming an intermediate layer on the separation layer; forming the thin film transistors on the intermediate layer; forming an insulation film on the thin film transistors and the intermediate layer; selectively removing at least a portion of the insulation film where each of the pixel electrodes is to be formed; forming each of the pixel electrodes on the insulation film and the separation layer in the region where at least a portion of the insulation film is removed; adhering the thin film transistors to a transfer material with an adhesive layer; producing exfoliation in the separation layer and/or at an interface of the separation layer and the substrate to separate the substrate from the separation layer; and removing any portion of the separation layer remaining on the intermediate layer and the pixel electrodes to form an active matrix substrate using the transfer material as a new substrate.
Claim 11
Dependent Claim
41 words
The method of manufacturing an active matrix substrate according to claim 8, wherein the step of selectively removing at least a portion of the insulation film comprises forming contact holes for electrically connecting the pixel electrodes to the thin film transistors.
Claim 12
Dependent Claim
29 words
The method of manufacturing an active matrix substrate according to claim 9, further comprising connecting the pixel electrodes directly to an impurity layer which constitutes the thin film transistors.
Claim 13
Dependent Claim
44 words
The method of manufacturing an active matrix substrate according to claim 9, further comprising the steps of: forming electrodes connected to an impurity layer which constitutes the thin film transistors; and connecting the pixel electrodes to the corresponding electrodes connected to the impurity layers.
Claim 14
Dependent Claim
38 words
The method of manufacturing an active matrix substrate according to claim 8, further comprising the step of forming at least one of a color filter and a light shielding film after the step of forming the pixel electrodes.
Claim 15
Dependent Claim
47 words
The method of manufacturing an active matrix substrate according to claim 8, wherein in selectively removing at least a portion of the insulation film, at least a portion of the insulation film is selectively removed from a region where an external connection terminal is to be provided.
Claim 16
Dependent Claim
53 words
The method of manufacturing an active matrix substrate according to claim 13, further comprising the step of forming the external connection terminal as a conductive layer made of a same material as the pixel electrodes or a same material as an electrode connected to an impurity layer which constitutes the thin film transistors.
Claim 17
Independent Claim
277 words
A method of manufacturing an active matrix substrate comprising a pixel portion including thin film transistors connected to scanning lines and signal lines arranged in a matrix, and pixel electrodes connected to terminals of the thin film transistors, the method comprising the steps of: forming a separation layer on a transmissive substrate; forming the thin film transistors over the separation layer or on an intermediate layer formed on the separation layer; forming an insulation film on the thin film transistors; forming the pixel electrodes made of a conductive material on the insulation film; forming a light shielding layer that is overlapped with the thin film transistors, and not overlapped with at least a portion of the pixel electrodes; adhering the thin film transistors and the light shielding layer to a transmissive transfer material with a transmissive adhesive layer; irradiating the separation layer through the transmissive substrate to produce exfoliation in the separation layer and/or at an interface of the separation layer and the transmissive substrate to separate the transmissive substrate from the separation layer; forming a photoresist on a surface obtained by separating the transmissive substrate or the surface of a layer appearing after removing any remaining portion of the separation layer; irradiating light to expose only a predetermined portion of the photoresist using the light shielding layer as a mask, followed by development to form a desired photoresist mask; selectively removing at least a portion of the intermediate layer and the insulation film or at least a portion of the insulation film by using the photoresist mask; and removing the photoresist mask to form an active matrix substrate using the transfer material as a new substrate.
Claim 18
Independent Claim
277 words
A method of manufacturing an active matrix substrate comprising a pixel portion including thin film transistors connected to scanning lines and signal lines arranged in a matrix, and pixel electrodes connected to terminals of the thin film transistors, the method comprising the steps of: forming a separation layer on a transmissive substrate; forming the thin film transistors over the separation layer or on an intermediate layer formed on the separation layer; forming an insulation film on the thin film transistors; forming the pixel electrodes made of a conductive material on the insulation film; forming a light shielding layer that is overlapped with the thin film transistors, and not overlapped with at least a portion of the pixel electrodes; adhering the thin film transistors and the light shielding layer to a transmissive transfer material with a transmissive adhesive layer; irradiating the separation layer through the transmissive substrate to produce exfoliation in the separation layer and/or at an interface of the separation layer and the transmissive substrate to separate the transmissive substrate from the separation layer; forming a photoresist on a surface obtained by separating the transmissive substrate or the surface of a layer appearing after removing any remaining portion of the separation layer; irradiating light to expose only a predetermined portion of the photoresist using the light shielding layer as a mask, followed by development to form a desired photoresist mask; selectively removing at least a portion of the intermediate layer and the insulation film or at least a portion of the insulation film by using the photoresist mask; and removing the photoresist mask to form an active matrix substrate using the transfer material as a new substrate.
Claim 19
Independent Claim
165 words
A method of manufacturing an active matrix substrate comprising a pixel portion including thin film transistors connected to scanning lines and signal lines arranged in a matrix, and pixel electrodes connected to terminals of the thin film transistors, the method comprising the steps of: forming a separation layer on a substrate; forming the pixel electrodes over the separation layer or on an intermediate layer formed on the separation layer; forming an insulation film on the pixel electrodes, and forming the thin film transistors on the insulation film to respectively connect the thin film transistors to the pixel electrodes; adhering the thin film transistors to a transmissive transfer material with a transmissive adhesive layer; producing exfoliation in the separation layer and/or at an interface of the separation layer and the substrate to separate the substrate from the separation layer; and removing any portion of the separation layer remaining on the intermediate layer to form an active matrix substrate using the transfer material as a new substrate.
Claim 20
Independent Claim
165 words
A method of manufacturing an active matrix substrate comprising a pixel portion including thin film transistors connected to scanning lines and signal lines arranged in a matrix, and pixel electrodes connected to terminals of the thin film transistors, the method comprising the steps of: forming a separation layer on a substrate; forming the pixel electrodes over the separation layer or on an intermediate layer formed on the separation layer; forming an insulation film on the pixel electrodes, and forming the thin film transistors on the insulation film to respectively connect the thin film transistors to the pixel electrodes; adhering the thin film transistors to a transmissive transfer material with a transmissive adhesive layer; producing exfoliation in the separation layer and/or at an interface of the separation layer and the substrate to separate the substrate from the separation layer; and removing any portion of the separation layer remaining on the intermediate layer to form an active matrix substrate using the transfer material as a new substrate.
Claim 21
Dependent Claim
40 words
The method of manufacturing an active matrix substrate according to claim 16, further comprising forming a conductive material layer on the separation layer or on the intermediate layer at a position where an external connection terminal is to be formed.
Claim 22
Dependent Claim
18 words
An active matrix substrate manufactured by the method of manufacturing an active matrix substrate according to claim 1.
Claim 23
Dependent Claim
18 words
An active matrix substrate manufactured by the method of manufacturing an active matrix substrate according to claim 8.
Claim 24
Dependent Claim
18 words
An active matrix substrate manufactured by the method of manufacturing an active matrix substrate according to claim 15.
Claim 25
Dependent Claim
18 words
An active matrix substrate manufactured by the method of manufacturing an active matrix substrate according to claim 16.
Claim 26
Dependent Claim
24 words
A liquid crystal display device comprising an active matrix substrate manufactured by the method of manufacturing an active matrix substrate according to claim 1.
Claim 27
Dependent Claim
24 words
A liquid crystal display device comprising an active matrix substrate manufactured by the method of manufacturing an active matrix substrate according to claim 8.
Claim 28
Dependent Claim
24 words
A liquid crystal display device comprising an active matrix substrate manufactured by the method of manufacturing an active matrix substrate according to claim 15.
Claim 29
Dependent Claim
24 words
A liquid crystal display device comprising an active matrix substrate manufactured by the method of manufacturing an active matrix substrate according to claim 16.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2003-10-03 | 2004-04-03 | 2004-10-03 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2007-10-03 | 2008-04-03 | 2008-10-03 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2011-10-03 | 2012-04-03 | 2012-10-03 | $7700.00 | Window Closed / Lapsed |