US5926735A
Expired / Lapsed
US
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Method of forming semiconductor device
Assignee: Semiconductor Energy Laboratory Co Ltd
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Filing: 1997-02-19
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Granted: 1999-07-20
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Expires: 2017-02-19
Abstract
Abstract There is disclosed a manufacturing method of highly integrated circuits with thin-film transistors (TFTs) for use as peripheral driver circuitry in active-matrix liquid crystal display (LCD) panel with a pixel array each having a charge transfer control TFT, capable of facilitating formation of contact holes otherwise being difficult in cases where an anode oxide film is formed on gate electrodes of TFTs and lead wires both of which are made of anodizable metal, such as aluminum. The method includes execution of anodization while causing a resist mask to be disposed on part of the lead wire and electrode made of aluminum, thereby partly eliminating formation of the anode oxide film on the lead wire and electrode. At a later step of fabrication, each contact is formed by use of such portion that has no anode oxide film formed thereon. This may allow aluminum to be employed as lead wires while enabling easy fabrication of contacts therefor.
Inventors
- 👤 Shunpei Yamazaki
- 👤 Naoaki Yamaguchi
- 👤 Yuugo Goto
- 👤 Satoshi Teramoto
- 👤 Katunobu Awane
- 👤 Yoshitaka Yamamoto
- 👤 Toshimasa Hamada
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-03 05:11
CPC Classifications
H; H10; H10D; H10D30/00; H10D30/60; H10D30/01; H10D30/021; H10D30/031; H10D30/0312; H10D30/0314; H10D30/0321; H10D64/00; H10D64/01; H10D64/013; H10D64/01302; H10D64/01304; H10D64/01316; H10D86/00; H10D86/40; H10D86/441; H10D86/60; H10W; H10W20/00; H10W20/01; H10W20/071; H10W20/081
Claims Analysis
Total Claims: 15
Claim 1
Independent Claim
73 words
A method of forming a semiconductor device comprising the steps of: performing anodization with a mask disposed on part of at least one of a lead wire and an electrode made of an anodizable material; and forming by use of said part underlying said mask a contact hole above at least one of said lead wire and said electrode while permitting separation of at least one of said lead wire and said electrode.
Claim 2
Independent Claim
73 words
A method of forming a semiconductor device comprising the steps of: performing anodization with a mask disposed on part of at least one of a lead wire and an electrode made of an anodizable material; and forming by use of said part underlying said mask a contact hole above at least one of said lead wire and said electrode while permitting separation of at least one of said lead wire and said electrode.
Claim 3
Dependent Claim
24 words
A method according to claim 1, wherein said anodizable material comprises a chosen material containing therein aluminum or using aluminum as its main component.
Claim 4
Dependent Claim
21 words
A method according to claim 1, wherein the anodization results in formation of an anode oxide film with dense film quality.
Claim 5
Independent Claim
104 words
A method of manufacturing a semiconductor device comprising the steps of: forming a film of an anodizable material; forming an anode oxide film on said film; disposing a first mask on said anode oxide film; forming by use of said mask a predefined lead wire and/or electrode; removing said first mask; disposing a second mask on part of said lead wire and/or electrode thereby performing anodization; and forming a contact hole for interconnection with at least one of said lead wire and said electrode by use of the part underlying said second mask while simultaneously permitting separation of said lead wire and said electrode.
Claim 6
Independent Claim
104 words
A method of manufacturing a semiconductor device comprising the steps of: forming a film of an anodizable material; forming an anode oxide film on said film; disposing a first mask on said anode oxide film; forming by use of said mask a predefined lead wire and/or electrode; removing said first mask; disposing a second mask on part of said lead wire and/or electrode thereby performing anodization; and forming a contact hole for interconnection with at least one of said lead wire and said electrode by use of the part underlying said second mask while simultaneously permitting separation of said lead wire and said electrode.
Claim 7
Dependent Claim
24 words
A method according to claim 4, wherein said anodizable material comprises a chosen material containing therein aluminum or using aluminum as its main component.
Claim 8
Dependent Claim
21 words
A method according to claim 4, wherein the anodization results in formation of an anode oxide film with dense film quality.
Claim 9
Independent Claim
53 words
A method of manufacturing a semiconductor device comprising the steps of: forming a pattern of anodizable material having a partly thin anode oxide film being formed on a surface thereof; and simultaneously performing formation of a contact and separation of said pattern by use of the thin portion of said anode oxide film.
Claim 10
Independent Claim
53 words
A method of manufacturing a semiconductor device comprising the steps of: forming a pattern of anodizable material having a partly thin anode oxide film being formed on a surface thereof; and simultaneously performing formation of a contact and separation of said pattern by use of the thin portion of said anode oxide film.
Claim 11
Dependent Claim
24 words
A method according to claim 7, wherein said anodizable material comprises a chosen material containing therein aluminum or using aluminum as its main component.
Claim 12
Independent Claim
176 words
A method of forming a semiconductor device comprising the steps of: disposing a plurality of masks on a surface of a first lead and/or electrode being made of aluminum or containing therein aluminum as its main component; performing anodization with said first lead and/or electrode being as an anode; removing said masks; forming an interlayer dielectric film overlying said first lead and/or electrode; forming openings in said interlayer dielectric film at locations of said masks thereby partly exposing said first lead and/or electrode; forming a metallic film on said interlayer dielectric film; patterning said metallic film causing part thereof to reside in at least one portion subject to formation of said openings to thereby form a second lead and/or electrode as contacted with said first lead and/or electrode; and simultaneously performing removal of said metallic film and removal of said first lead and/or electrode at at least one of remaining portions subject to formation of said openings during the prior step of patterning said metallic film, thereby attaining separation of said first lead and/or electrode thereat.
Claim 13
Independent Claim
176 words
A method of forming a semiconductor device comprising the steps of: disposing a plurality of masks on a surface of a first lead and/or electrode being made of aluminum or containing therein aluminum as its main component; performing anodization with said first lead and/or electrode being as an anode; removing said masks; forming an interlayer dielectric film overlying said first lead and/or electrode; forming openings in said interlayer dielectric film at locations of said masks thereby partly exposing said first lead and/or electrode; forming a metallic film on said interlayer dielectric film; patterning said metallic film causing part thereof to reside in at least one portion subject to formation of said openings to thereby form a second lead and/or electrode as contacted with said first lead and/or electrode; and simultaneously performing removal of said metallic film and removal of said first lead and/or electrode at at least one of remaining portions subject to formation of said openings during the prior step of patterning said metallic film, thereby attaining separation of said first lead and/or electrode thereat.
Claim 14
Dependent Claim
29 words
A method according to claim 9, wherein said masks overlie an anode oxide film less in thickness than an anode oxide film to be formed in a later step.
Claim 15
Dependent Claim
21 words
A method according to claim 9, wherein the anodization results in formation of an anodic oxide film having dense film quality.
References Cited (Backward Citations)
US5648662A
Cited
US5485019A
Cited
US5849611A
Cited
JPH07310191A
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US5736414A
Cited
JPH08203880A
Cited
US5824235A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2002-07-19 | 2003-01-18 | 2003-07-20 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2006-07-19 | 2007-01-18 | 2007-07-20 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2010-07-19 | 2011-01-18 | 2011-07-20 | $7700.00 | Window Closed / Lapsed |