US4432035A
Expired / Lapsed
US
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Method of making high dielectric constant insulators and capacitors using same
Assignee: International Business Machines Corp
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Filing: 1982-06-11
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Granted: 1984-02-14
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Expires: 2002-06-11
Abstract
Abstract An improved method of fabricating a stable high dielectric constant and low leakage dielectric material includes oxidizing at a temperature of about 400 DEG C. or higher a layer of a transition metal-silicon alloy having 40% to 90% transition metal by atomic weight to produce a silicate or homogeneous mixture. The mixture includes an oxide of the transition metal and silicon dioxide. The alloy may be deposited on, e.g., a semiconductor or an electrically conductive layer that is oxidation resistant, and the thickness of the mixture or oxidized alloy should be within the range of 5 to 50 nanometers. By depositing an electrically conductive layer on the homogeneous mixture, a capacitor having a high dielectric, low leakage dielectric medium is provided.
Inventors
- 👤 Ning Hsieh
- 👤 Eugene A. Irene
- 👤 Mousa H. Ishaq
- 👤 Stanley Roberts
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-31 06:34
CPC Classifications
H; H01; H01G; H01G2/00; H01G2/12
Claims Analysis
Total Claims: 30
Claim 1
Independent Claim
53 words
A process for making a dielectric material comprising the steps of: providing a layer of a transition metal-silicon alloy having from about 40% to 90% transition metal by atomic volume, and oxidizing said layer so as to produce a mixture of an oxide of said transition metal and an oxide of said silicon.
Claim 2
Dependent Claim
53 words
A process for making a dielectric material comprising the steps of: providing a layer of a transition metal-silicon alloy having from about 40% to 90% transition metal by atomic volume, and oxidizing said layer so as to produce a mixture of an oxide of said transition metal and an oxide of said silicon.
Claim 3
Dependent Claim
15 words
A process as set forth in claim 1 wherein said mixture is a homogeneous mixture.
Claim 4
Dependent Claim
21 words
A process as set forth in claim 2 wherein said layer is oxidized at a temperature of 400° C. or higher.
Claim 5
Dependent Claim
19 words
A process as set forth in claim 2 wherein said mixture has a thickness between 5 and 50 nanometers.
Claim 6
Dependent Claim
20 words
A process as set forth in claim 2 wherein said alloy layer has a thickness between 4 and 16 nanometers.
Claim 7
Dependent Claim
24 words
A process as set forth in claim 2 wherein said alloy layer is oxidized until all of said layer is converted into said mixture.
Claim 8
Dependent Claim
17 words
A process as set forth in claim 1 wherein said alloy layer is oxidized in dry oxygen.
Claim 9
Dependent Claim
29 words
A process as set forth in claim 1 wherein said transition metal is selected from the group consisting of tantalum, hafnium, zirconium, titanium, lanthanum, yttrium, scandium, niobium and vanadium.
Claim 10
Dependent Claim
13 words
A process as set forth in claim 8 wherein said metal is hafnium.
Claim 11
Dependent Claim
15 words
A process as set forth in claim 9 wherein said alloy is hafnium silicide HfSi.
Claim 12
Dependent Claim
13 words
A process as set forth in claim 8 wherein said metal is tantalum.
Claim 13
Dependent Claim
15 words
A process as set forth in claim 11 wherein said alloy is tantalum silicide TaSi.
Claim 14
Dependent Claim
13 words
A process as set forth in claim 8 wherein said metal is yttrium.
Claim 15
Dependent Claim
15 words
A process as set forth in claim 13 wherein said alloy is yttrium silicide YSi.
Claim 16
Dependent Claim
16 words
A process as set forth in claim 8 wherein said alloy is deposited on a substrate.
Claim 17
Dependent Claim
26 words
A process as set forth in claim 15 wherein said substrate is an electrically conductive substrate and further including depositing a conductive layer on said mixture.
Claim 18
Dependent Claim
60 words
A process for making a dielectric material which includes oxidizing a metal-silicon alloy having a thickness between 4 and 16 nanometers until all of the alloy is converted into oxides, said metal being 40% to 90% of said alloy by atomic volume and being selected from the group consisting of tantalum, hafnium, zirconium, titanium, lanthanum, yttrium, scandium, niobium and vanadium.
Claim 19
Dependent Claim
60 words
A process for making a dielectric material which includes oxidizing a metal-silicon alloy having a thickness between 4 and 16 nanometers until all of the alloy is converted into oxides, said metal being 40% to 90% of said alloy by atomic volume and being selected from the group consisting of tantalum, hafnium, zirconium, titanium, lanthanum, yttrium, scandium, niobium and vanadium.
Claim 20
Dependent Claim
35 words
A capacitor comprising first and second conductive layers, and a dielectric layer interposed between said conductive layers, said dielectric layer including a mixture of an oxide of a transition metal and an oxide of silicon.
Claim 21
Dependent Claim
35 words
A capacitor comprising first and second conductive layers, and a dielectric layer interposed between said conductive layers, said dielectric layer including a mixture of an oxide of a transition metal and an oxide of silicon.
Claim 22
Dependent Claim
36 words
A capacitor as set forth in claim 18 wherein said mixture is a homogenous mixture and said transition metal is selected from the group consisting of tantalum, hafnium, zirconium, titanium, lanthanum, yttrium, scandium, niobium and vanadium.
Claim 23
Dependent Claim
21 words
A capacitor as set forth in claim 19 wherein said transition metal oxide is tantalum pentoxide (Ta 2 O 5 ).
Claim 24
Dependent Claim
20 words
A capacitor as set forth in claim 19 wherein said dielectric layer has a thickness between 5 and 50 nanometers.
Claim 25
Dependent Claim
35 words
A capacitor comprising first and second conductive layers, and a dielectric layer interposed between said conductive layers, said dielectric layer including a homogeneous mixture of hafnium dioxide (HfO 2 ) and an oxide of silicon.
Claim 26
Dependent Claim
35 words
A capacitor comprising first and second conductive layers, and a dielectric layer interposed between said conductive layers, said dielectric layer including a homogeneous mixture of hafnium dioxide (HfO 2 ) and an oxide of silicon.
Claim 27
Dependent Claim
35 words
A capacitor comprising first and second conductive layers, and a dielectric layer interposed between said conductive layers, said dielectric layer including a homogeneous mixture of yttrium dioxide (YO 2 ) and an oxide of silicon.
Claim 28
Dependent Claim
35 words
A capacitor comprising first and second conductive layers, and a dielectric layer interposed between said conductive layers, said dielectric layer including a homogeneous mixture of yttrium dioxide (YO 2 ) and an oxide of silicon.
Claim 29
Dependent Claim
36 words
A capacitor comprising first and second conductive layers, and a dielectric layer interposed between said conductive layers, said dielectric layer consisting of a mixture of an oxide of a transition metal and an oxide of silicon.
Claim 30
Dependent Claim
36 words
A capacitor comprising first and second conductive layers, and a dielectric layer interposed between said conductive layers, said dielectric layer consisting of a mixture of an oxide of a transition metal and an oxide of silicon.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1987-02-13 | 1987-08-15 | 1988-02-14 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1991-02-13 | 1991-08-15 | 1992-02-14 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1995-02-13 | 1995-08-15 | 1996-02-14 | $7700.00 | Window Closed / Lapsed |