US6023124A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Electron emission device and display device using the same
Assignee: Pioneer Corp
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Filing: 1998-02-27
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Granted: 2000-02-08
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Expires: 2018-02-27
Abstract
Abstract An electron emission device exhibits a high electron emission efficiency. The device includes an electron supply layer of metal or semiconductor, an insulator layer formed on the electron supply layer, and a thin-film metal electrode formed on the insulator layer. The insulator layer is made of an amorphous dielectric substance and has a film thickness of 50 nm or greater and has an amorphous phase with an average grain size of 5 to 100 nm as a major component and a polycrystal phase as a minor component. When an electric field is applied between the electron supply layer and the thin-film metal electrode, the electron emission device emits electrons.
Inventors
- 👤 Takashi Chuman
- 👤 Shingo Iwasaki
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 01:42
CPC Classifications
H; H01; H01J; H01J1/00; H01J1/02; H01J1/30; H01J1/312; B; B82; B82Y; B82Y10/00; H01J2329/00
Claims Analysis
Total Claims: 8
Claim 1
Independent Claim
110 words
An electron emission device comprising: an electron supply layer of metal or semiconductor; an insulator layer formed on the electron supply layer; and a thin-film metal electrode formed on the insulator layer and facing a vacuum space, characterized in that said insulator layer is made of an amorphous dielectric substance and has a film thickness of 50 nm or greater and has an amorphous phase with an average grain size of 5 to 100 nm as a major component and a polycrystal phase as a minor component, whereby the electron emission device emits electrons when an electric field is applied between the electron supply layer and the thin-film metal electrode.
Claim 2
Dependent Claim
110 words
An electron emission device comprising: an electron supply layer of metal or semiconductor; an insulator layer formed on the electron supply layer; and a thin-film metal electrode formed on the insulator layer and facing a vacuum space, characterized in that said insulator layer is made of an amorphous dielectric substance and has a film thickness of 50 nm or greater and has an amorphous phase with an average grain size of 5 to 100 nm as a major component and a polycrystal phase as a minor component, whereby the electron emission device emits electrons when an electric field is applied between the electron supply layer and the thin-film metal electrode.
Claim 3
Dependent Claim
137 words
An electron emission display device comprising: a pair of first and second substrates facing each other with a vacuum space in between; a plurality of electron emission devices provided on the first substrate; a collector electrode provided in the second substrate; and a fluorescent layer formed on the collector electrode, each of the electron emission devices comprising an electron supply layer of metal or semiconductor; an insulator layer formed on the electron supply layer; and a thin-film metal electrode formed on the insulator layer and facing a vacuum space, wherein said insulator layer is made of an amorphous dielectric substance and has a film thickness of 50 nm or greater and has an amorphous phase with an average grain size of 5 to 100 nm as a major component and a polycrystal phase as a minor component.
Claim 4
Dependent Claim
137 words
An electron emission display device comprising: a pair of first and second substrates facing each other with a vacuum space in between; a plurality of electron emission devices provided on the first substrate; a collector electrode provided in the second substrate; and a fluorescent layer formed on the collector electrode, each of the electron emission devices comprising an electron supply layer of metal or semiconductor; an insulator layer formed on the electron supply layer; and a thin-film metal electrode formed on the insulator layer and facing a vacuum space, wherein said insulator layer is made of an amorphous dielectric substance and has a film thickness of 50 nm or greater and has an amorphous phase with an average grain size of 5 to 100 nm as a major component and a polycrystal phase as a minor component.
Claim 5
Dependent Claim
192 words
An electron emission display device comprising: a pair of a device substrate and a transparent substrate facing each other with a vacuum space in between; a plurality of ohmic electrodes formed in parallel on an inner surface of the device substrate; a plurality of electron emission devices provided on the ohmic electrodes, each of the electron emission devices comprising an electron supply layer of metal or semiconductor; an insulator layer formed on the electron supply layer; and a thin-film metal electrode formed on the insulator layer and facing the vacuum space, wherein said insulator layer is made of an amorphous dielectric substance and has a film thickness of 50 nm or greater and has an amorphous phase with an average grain size of 5 to 100 nm as a major component and a polycrystal phase as a minor component; a plurality of bus electrodes formed on parts of the thin-film metal electrodes and extending in parallel to one another and perpendicular to the ohmic electrodes so as to electrically connect adjoining thin-film metal electrodes; a plurality of collector electrodes provided in the transparent substrate; and fluorescent layers formed on the collector electrodes.
Claim 6
Dependent Claim
192 words
An electron emission display device comprising: a pair of a device substrate and a transparent substrate facing each other with a vacuum space in between; a plurality of ohmic electrodes formed in parallel on an inner surface of the device substrate; a plurality of electron emission devices provided on the ohmic electrodes, each of the electron emission devices comprising an electron supply layer of metal or semiconductor; an insulator layer formed on the electron supply layer; and a thin-film metal electrode formed on the insulator layer and facing the vacuum space, wherein said insulator layer is made of an amorphous dielectric substance and has a film thickness of 50 nm or greater and has an amorphous phase with an average grain size of 5 to 100 nm as a major component and a polycrystal phase as a minor component; a plurality of bus electrodes formed on parts of the thin-film metal electrodes and extending in parallel to one another and perpendicular to the ohmic electrodes so as to electrically connect adjoining thin-film metal electrodes; a plurality of collector electrodes provided in the transparent substrate; and fluorescent layers formed on the collector electrodes.
Claim 7
Dependent Claim
34 words
An electron emission display device according to claim further comprising a second auxiliary insulator layer with openings formed to separate the surfaces of the thin-film metal electrodes into a plurality of electron emission regions.
Claim 8
Dependent Claim
18 words
An electron emission display device according to claim wherein the second auxiliary insulator layer covers the bus electrodes.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2003-02-07 | 2003-08-09 | 2004-02-08 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2007-02-07 | 2007-08-09 | 2008-02-08 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2011-02-07 | 2011-08-09 | 2012-02-08 | $7700.00 | Window Closed / Lapsed |