Claims Analysis
Total Claims: 12
Claim 1
Independent Claim
146 words
A cold electron emission display device comprising; a pair of an element-substrate and a transparent substrate sandwiching a vacuum space and facing to each other; a plurality of ohmic electrodes disposed on said element-substrate parallel to each other; a plurality of cold electron emission elements of semiconductor each comprising; a semiconductor layer formed on said ohmic electrode; a porous semiconductor layer formed on said semiconductor layer; and a metallic thin film electrode formed on said porous semiconductor layer to face said vacuum space; a plurality of bus electrodes formed on said metallic thin film electrodes for bridging and electrically connecting the adjacent metallic thin film electrodes and extending perpendicular to said ohmic electrodes; a plurality of collector electrode disposed on said transparent substrate parallel to each other for capturing emitted electrons from said metallic thin film electrode; and a fluorescent layer formed on said collector electrode.
Claim 2
Dependent Claim
146 words
A cold electron emission display device comprising; a pair of an element-substrate and a transparent substrate sandwiching a vacuum space and facing to each other; a plurality of ohmic electrodes disposed on said element-substrate parallel to each other; a plurality of cold electron emission elements of semiconductor each comprising; a semiconductor layer formed on said ohmic electrode; a porous semiconductor layer formed on said semiconductor layer; and a metallic thin film electrode formed on said porous semiconductor layer to face said vacuum space; a plurality of bus electrodes formed on said metallic thin film electrodes for bridging and electrically connecting the adjacent metallic thin film electrodes and extending perpendicular to said ohmic electrodes; a plurality of collector electrode disposed on said transparent substrate parallel to each other for capturing emitted electrons from said metallic thin film electrode; and a fluorescent layer formed on said collector electrode.
Claim 3
Dependent Claim
37 words
A cold electron emission display device according to claim 1 wherein, said porous semiconductor layer is formed by using an anodic treatment on the surface of said semiconductor layer to form minute channel as a porous layer.
Claim 4
Dependent Claim
23 words
A cold electron emission display device according to claim 1 further comprising an insulative layer defining a plurality of said porous semiconductor layer.
Claim 5
Dependent Claim
32 words
A cold electron emission display device according to claim 1 further comprising a second insulative layer defining a plurality of electron emission regions on the surface of said metallic thin film electrode.
Claim 6
Dependent Claim
19 words
A cold electron emission display device according to claim 4 wherein, said second insulative layer covers said bus electrodes.
Claim 7
Dependent Claim
22 words
A cold electron emission display device according to claim 1 wherein, said ohmic electrodes are formed an internal wall of said element-substrate.
Claim 8
Dependent Claim
29 words
A cold electron emission display device according to claim 1 wherein, said element-substrate is said semiconductor layer per se, on the back-face of which said ohmic electrodes are formed.
Claim 9
Dependent Claim
25 words
A cold electron emission display device according to claim 1 wherein, said metallic thin film electrodes are island-shaped separately and connected to said bus electrodes.
Claim 10
Dependent Claim
22 words
A cold electron emission display device according to claim 1 wherein, said semiconductor layers are formed in common on said ohmic electrodes.
Claim 11
Dependent Claim
24 words
A cold electron emission display device according to claim 1 wherein, said semiconductor cold electron emission elements are separately formed per said ohmic electrode.
Claim 12
Dependent Claim
45 words
A cold electron emission display device according to claim 1 wherein, said semiconductor layer is made of silicone, said porous semiconductor layer is made of porous silicone, said metallic thin film electrode is selected from Au, Pt, Ag, Cu or an alloy of individuals thereof.