Patent US6544875B1 successfully refreshed from Google Patents.
US6544875B1
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Chemical vapor deposition of silicate high dielectric constant materials
Assignee: Texas Instruments Inc
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Filing: 2000-01-07
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Granted: 2003-04-08
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Expires: 2020-01-07
Abstract
Abstract A method of fabricating an electronic device over a semiconductor substrate, the method comprising the steps of: forming a conductive structure over the semiconductor substrate (step 106 of FIG. 1); and forming a layer of high-dielectric constant material between the conductive structure and the semiconductor substrate (step 102 of FIG. 1), the layer of high-dielectric constant material is formed by supplying a gaseous silicon source and a second gaseous material which is comprised of a material selected from the group consisting of: Hf, Zr, La, Y, Sc, Ce and any combination thereof.
Inventors
- 👤 Glen D. Wilk
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 01:11
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/60; H10P14/63; H10P14/6326; H10P14/6328; H10P14/6334; C; C23; C23C; C23C16/00; C23C16/22; C23C16/30; C23C16/40; C23C16/401; C23C16/42; C23C16/56; H10D; H10D64/00; H10D64/01; H10D64/013; H10D64/01302; H10D64/01332; H10D64/01336; H10D64/0134; H10D64/01342; H10D64/60; H10D64/66; H10D64/68; H10D64/691; H10P14/66; H10P14/668; H10P14/6681; H10P14/6682; H10P14/69; H10P14/692; H10P14/6921; H10P14/6928; H10P14/693; H10P14/6934; H10P14/6938; H10P14/6939; H10P14/69396; H10P14/6339; H10P14/69392; H10P14/69395
Claims Analysis
Total Claims: 25
Claim 1
Independent Claim
78 words
A method of fabricating a transistor gate dielectric over a semiconductor substrate, said method comprising the steps of: forming a conductive gate over said semiconductor substrate; and forming a metal silicate gate dielectric between said conductive structure and said semiconductor substrate, said metal silicate gate dielectric is formed by supplying a gaseous silicon source and a second gaseous material which comprises said metal, wherein the metal is selected from the group consisting of: Hf, Zr, and combinations thereof.
Claim 2
Independent Claim
78 words
A method of fabricating a transistor gate dielectric over a semiconductor substrate, said method comprising the steps of: forming a conductive gate over said semiconductor substrate; and forming a metal silicate gate dielectric between said conductive structure and said semiconductor substrate, said metal silicate gate dielectric is formed by supplying a gaseous silicon source and a second gaseous material which comprises said metal, wherein the metal is selected from the group consisting of: Hf, Zr, and combinations thereof.
Claim 3
Dependent Claim
21 words
The method of claim 1 , wherein said metal silicate gate dielectric is formed by also supplying a gaseous oxygen source.
Claim 4
Dependent Claim
26 words
The method of claim 1 , further comprising the step of: subjecting said metal silicate gate dielectric to between 600 and 900 C in an ambient.
Claim 5
Dependent Claim
39 words
The method of claim 3 , wherein said ambient is comprised of a gas selected from the group consisting of: O 2 , O 3 , N 2 , H 2 , NH 3 , and any combination thereof.
Claim 6
Dependent Claim
29 words
The method of claim 1 , wherein said gaseous silicon source is comprised of a gas selected from the group consisting of: silane, disilane, dichlorosilane, and any combination thereof.
Claim 7
Dependent Claim
15 words
The method of claim 5 , wherein said gaseous silicon source includes a carrier gas.
Claim 8
Dependent Claim
28 words
The method of claim 6 , wherein said carrier gas is comprised of a gas selected from the group consisting of: He, N 2 , Ar, and Ne.
Claim 9
Dependent Claim
78 words
The method of claim 1 , wherein said second gaseous material is comprised of a gas consisting of: Zr(OC 4 H 9 ) 4 , Hf(OC 4 H 9 ) 4 , Zr(NO 3 ) 4 , Hf(NO 3 ) 4 , ZrCl 4 , HfCl 4 , ZrI 4 , HfI 4 , ZrBr 4 , HfBr 4 , Zr 2 (OPri) 6 (tmhd) 2 , Hf 2 (OPri) 6 (tmhd) 2 , and any combination thereof.
Claim 10
Dependent Claim
15 words
The method of claim 1 , wherein said second gaseous material is ZrCl 4 .
Claim 11
Dependent Claim
15 words
The method of claim 1 , wherein said second gaseous material is HfCl 4 .
Claim 12
Dependent Claim
19 words
The method of claim 1 , wherein said second gaseous material is Zr 2 (OPri) 6 (tmhd) 2 .
Claim 13
Dependent Claim
19 words
The method of claim 1 , wherein said second gaseous material is Hf 2 (OPri) 6 (tmhd) 2 .
Claim 14
Dependent Claim
19 words
The method of claim 1 , wherein said second gaseous material is Zr(OC 4 H 9 ) 4 .
Claim 15
Dependent Claim
19 words
The method of claim 1 , wherein said second gaseous material is Hf(OC 4 H 9 ) 4 .
Claim 16
Dependent Claim
13 words
The method of claim 1 , wherein said gaseous silicon source is silane.
Claim 17
Dependent Claim
13 words
The method of claim 1 , wherein said gaseous silicon source is dichlorosilane.
Claim 18
Dependent Claim
15 words
The method of claim 2 , wherein said second gaseous material is ZrCl 4 .
Claim 19
Dependent Claim
15 words
The method of claim 2 , wherein said second gaseous material is HfCl 4 .
Claim 20
Dependent Claim
19 words
The method of claim 2 , wherein said second gaseous material is Zr 2 (OPri) 6 (tmhd) 2 .
Claim 21
Dependent Claim
19 words
The method of claim 2 , wherein said second gaseous material is Hf 2 (OPri) 6 (tmhd) 2 .
Claim 22
Dependent Claim
19 words
The method of claim 2 , wherein said second gaseous material is Zr(OC 4 H 9 ) 4 .
Claim 23
Dependent Claim
19 words
The method of claim 2 , wherein said second gaseous material is Hf(OC 4 H 9 ) 4 .
Claim 24
Dependent Claim
14 words
The method of claim 2 , wherein said gaseous s silicon source is silane.
Claim 25
Dependent Claim
13 words
The method of claim 2 , wherein said gaseous silicon source is dichlorosilane.
References Cited (Backward Citations)
US4147615A
Cited
US4495219A
Cited
US4432035A
Cited
US4464701A
Cited
US5874766A
Cited
US5068124A
Cited
US5384729A
Cited
JPH05239650A
Cited
US5677015A
Cited
US5834357A
Cited
US5686748A
Cited
US5744374A
Cited
US6086990A
Cited
US6063677A
Cited
US6127199A
Cited
US6130503A
Cited
US6023124A
Cited
US6023125A
Cited
US5851921A
Cited
US6144155A
Cited
US6147443A
Cited
WO1998059366A1
Cited
US6020243A
Cited
US6013553A
Cited
US6291866B1
Cited
US6291867B1
Cited
US6066922A
Cited
US5907780A
Cited
US6291283B1
Cited
US6156672A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2006-04-07 | 2006-10-07 | 2007-04-08 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2010-04-07 | 2010-10-07 | 2011-04-08 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2014-04-07 | 2014-10-07 | 2015-04-08 | $7700.00 | Window Closed / Lapsed |