US6787413B2
Expired / Lapsed
US
⏱️ 0.0 years remaining
Capacitor structure forming methods
Assignee: Micron Technology Inc
•
Filing: 2002-06-17
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Granted: 2004-09-07
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Expires: 2022-06-17
Abstract
Abstract Embodiments in accordance with the present invention provide alternative materials, and methods of forming such materials, that are effective as dielectric layers. Such embodiments include forming metal-containing dielectric layers over a silicon-containing substrate where a metal-containing layer is first formed and that treated to form a dielectric layer. Dielectric layers formed by methods of the present invention have a dielectric constant greater than that of silicon dioxide, and can have an equivalent oxide thickness of less than 2 nanometers. Such dielectric layers are useful in the forming of a variety of semiconductor devices such as transistors, capacitors and the like where such devices and integrated circuits formed from such devices are encompassed by embodiments in accordance with the present invention.
Inventors
- 👤 Kie Y. Ahn
- 👤 Leonard Forbes
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 01:18
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/60; H10P14/66; H10P14/662; H10D; H10D64/00; H10D64/01; H10D64/013; H10D64/01302; H10D64/01332; H10D64/01336; H10D64/0134; H10D64/01342; H10D64/0135; H10D64/60; H10D64/66; H10D64/68; H10D64/681; H10D64/685; H10D64/691; H10P14/63; H10P14/6302; H10P14/6304; H10P14/6314; H10P14/69; H10P14/692; H10P14/6938; H10P14/6939; H10B; H10B12/00; H10B12/01; H10B12/02; H10B12/03; H10B12/05; H10D1/00; H10D1/60; H10D1/68; H10P14/69392; H10P14/69396
Claims Analysis
Total Claims: 22
Claim 1
Independent Claim
70 words
A method of forming a capacitor structure, comprising: providing a first capacitor electrode; forming a hafnium-containing dielectric layer overlying the first capacitor electrode by previously forming a hafnium-containing layer consisting essentially of metal; forming a lanthanum-containing dielectric layer on and in contact with the hafnium-containing dielectric layer by previously forming a lanthanum-containing layer consisting essentially of metal; and forming a second capacitor electrode overlying the hafnium-containing and lanthanum-containing dielectric layers.
Claim 2
Independent Claim
70 words
A method of forming a capacitor structure, comprising: providing a first capacitor electrode; forming a hafnium-containing dielectric layer overlying the first capacitor electrode by previously forming a hafnium-containing layer consisting essentially of metal; forming a lanthanum-containing dielectric layer on and in contact with the hafnium-containing dielectric layer by previously forming a lanthanum-containing layer consisting essentially of metal; and forming a second capacitor electrode overlying the hafnium-containing and lanthanum-containing dielectric layers.
Claim 3
Dependent Claim
46 words
The method of claim 1 , where: the hafnium-containing metal layer has a first thickness; the lanthanum-containing metal layer has a second thickness; and wherein a ratio of the first thickness to the second thickness is from about 1 to 4 to about 4 to 1.
Claim 4
Dependent Claim
32 words
The method of claim 2 where the first thickness is no greater then about 1 nm and the ratio of thicknesses is from about 1 to 3 to about 1 to 4.
Claim 5
Dependent Claim
39 words
The method of claim 2 , further comprising, prior to forming the second capacitor electrode, providing an oxygen comprising atmosphere effective to essentially completely oxidize the hafnium-containing and lanthanum-containing metal layers, thus forming the hafnium-containing and lanthanum-containing dielectric layers.
Claim 6
Dependent Claim
32 words
The method of claim 4 , where providing the oxygen comprising atmosphere further comprises heating the hafnium-containing and lanthanum-containing metal layers to a temperature from about 200° C. to about 400° C.
Claim 7
Dependent Claim
45 words
The method of claim 1 , where: the providing the first capacitor electrode comprises providing a silicon-containing first capacitor electrode; and prior to forming the hafnium-containing metal layer, forming a layer of silicon dioxide over at least a portion of the silicon-containing first capacitor electrode.
Claim 8
Dependent Claim
52 words
The method of claim 6 , where the hafnium-containing metal layer is formed overlying at least a portion of the layer of silicon dioxide; and further comprising providing conditions effective for the hafnium of the hafnium-containing metal layer to chemically reduce at least a portion of the silicon diode underlying such layer.
Claim 9
Dependent Claim
13 words
The method claim 1 , where the hafnium-containing metal layer consists of hafnium.
Claim 10
Dependent Claim
13 words
The method claim 1 , where the lanthanum-containing metal layer consists of lanthanum.
Claim 11
Independent Claim
94 words
A method of forming a capacitor structure comprising: providing a first capacitor electrode; forming a hafnium-containing layer over the first capacitor electrode; forming a lanthanum-containing layer over the hafnium-containing layer; exposing the hafnium-containing layer and the lanthanum-containing layer to an oxygen comprising atmosphere by ion bombardment using an energy of about 10 electron volts (eV) or less, and heating the hafnium-containing layer and the lanthanum-containing layer to a temperature effective to form a hafnium-containing dielectric layer and a lanthanum-containing dielectric layer; and forming a second capacitor electrode over the hafnium-containing and lanthanum-containing dielectric layers.
Claim 12
Independent Claim
94 words
A method of forming a capacitor structure comprising: providing a first capacitor electrode; forming a hafnium-containing layer over the first capacitor electrode; forming a lanthanum-containing layer over the hafnium-containing layer; exposing the hafnium-containing layer and the lanthanum-containing layer to an oxygen comprising atmosphere by ion bombardment using an energy of about 10 electron volts (eV) or less, and heating the hafnium-containing layer and the lanthanum-containing layer to a temperature effective to form a hafnium-containing dielectric layer and a lanthanum-containing dielectric layer; and forming a second capacitor electrode over the hafnium-containing and lanthanum-containing dielectric layers.
Claim 13
Dependent Claim
25 words
The method of claim 10 where the heating comprises heating to a temperature from about 200° C. to about 400° C. during the ion bombardment.
Claim 14
Independent Claim
93 words
A method of forming a capacitor structure comprising: providing a first capacitor electrode over a substrate; forming a hafnium-containing layer over the first capacitor electrode; forming a lanthanum-containing layer over the hafnium-containing layer; positioning the substrate within a reaction chamber and exposing the hafnium-containing layer and the lanthanum-containing layer to oxygen radicals within the reaction chamber and heating the hafnium-containing layer and the lanthanum-containing layer to a temperature effective to form a hafnium-containing dielectric layer and a lanthanum-containing dielectric layer; and forming a second capacitor electrode over the hafnium-containing and lanthanum-containing dielectric layers.
Claim 15
Independent Claim
93 words
A method of forming a capacitor structure comprising: providing a first capacitor electrode over a substrate; forming a hafnium-containing layer over the first capacitor electrode; forming a lanthanum-containing layer over the hafnium-containing layer; positioning the substrate within a reaction chamber and exposing the hafnium-containing layer and the lanthanum-containing layer to oxygen radicals within the reaction chamber and heating the hafnium-containing layer and the lanthanum-containing layer to a temperature effective to form a hafnium-containing dielectric layer and a lanthanum-containing dielectric layer; and forming a second capacitor electrode over the hafnium-containing and lanthanum-containing dielectric layers.
Claim 16
Independent Claim
161 words
A method for forming a capacitor structure, comprising: providing a first capacitor electrode having a surface comprising silicon; forming a layer of silicon dioxide on or in the silicon surface; first forming a hafnium-containing layer and second forming a lanthanum-containing layer over the layer of silicon dioxide, the first forming and the second forming encompassing physical vapor deposition; combining hafnium of the hafnium-containing layer with oxygen of the silicon dioxide layer to form a hafnium oxide over the first electrode; exposing the hafnium and lanthanum containing layers to an oxygen comprising atmosphere by ion bombardment of the hafnium-containing layer and the lanthanum-containing layer using an energy of about 10 eV or less while heating the hafnium and lanthanum layer to a temperature from about 200° C. to about 400° C. to form oxides of hafnium and lanthanum as a hafnium-containing dielectric layer and a lanthanum-containing dielectric layer, respectively; and forming a second capacitor electrode over the hafnium-containing and lanthanum-containing dielectric layers.
Claim 17
Independent Claim
161 words
A method for forming a capacitor structure, comprising: providing a first capacitor electrode having a surface comprising silicon; forming a layer of silicon dioxide on or in the silicon surface; first forming a hafnium-containing layer and second forming a lanthanum-containing layer over the layer of silicon dioxide, the first forming and the second forming encompassing physical vapor deposition; combining hafnium of the hafnium-containing layer with oxygen of the silicon dioxide layer to form a hafnium oxide over the first electrode; exposing the hafnium and lanthanum containing layers to an oxygen comprising atmosphere by ion bombardment of the hafnium-containing layer and the lanthanum-containing layer using an energy of about 10 eV or less while heating the hafnium and lanthanum layer to a temperature from about 200° C. to about 400° C. to form oxides of hafnium and lanthanum as a hafnium-containing dielectric layer and a lanthanum-containing dielectric layer, respectively; and forming a second capacitor electrode over the hafnium-containing and lanthanum-containing dielectric layers.
Claim 18
Independent Claim
56 words
A method of forming a capacitor structure, comprising: providing a first capacitor electrode; forming a dielectric layer consisting of hafnium oxide overlying the first capacitor electrode; forming a dielectric layer consisting of lanthanum oxide on and in contact with the hafnium-containing dielectric layer; and forming a second capacitor electrode overlying the hafnium-containing and lanthanum-containing dielectric layer.
Claim 19
Independent Claim
56 words
A method of forming a capacitor structure, comprising: providing a first capacitor electrode; forming a dielectric layer consisting of hafnium oxide overlying the first capacitor electrode; forming a dielectric layer consisting of lanthanum oxide on and in contact with the hafnium-containing dielectric layer; and forming a second capacitor electrode overlying the hafnium-containing and lanthanum-containing dielectric layer.
Claim 20
Independent Claim
67 words
A method of forming a capacitor structure, comprising: providing a first capacitor electrode; forming a hafnium oxide dielectric layer overlying the first capacitor electrode by forming a hafnium-containing metal layer consisting of hafnium; forming a lanthanum oxide dielectric layer on and in contact with the hafnium-containing dielectric layer by forming a lanthanum-containing metal layer; and forming a second capacitor electrode overlying the hafnium-containing and lanthanum-containing dielectric layers.
Claim 21
Independent Claim
67 words
A method of forming a capacitor structure, comprising: providing a first capacitor electrode; forming a hafnium oxide dielectric layer overlying the first capacitor electrode by forming a hafnium-containing metal layer consisting of hafnium; forming a lanthanum oxide dielectric layer on and in contact with the hafnium-containing dielectric layer by forming a lanthanum-containing metal layer; and forming a second capacitor electrode overlying the hafnium-containing and lanthanum-containing dielectric layers.
Claim 22
Dependent Claim
13 words
The method claim 15 , here the lanthanum-containing metal layer consists of lanthanum.
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| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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