Claims Analysis
Total Claims: 13
Claim 1
Independent Claim
181 words
A method of backside and edge exclusion of polymer film on a wafer during CVD, comprising the steps of: securing said wafer to a wafer clamp, said wafer clamp comprising a peripheral raised region and a plurality of raised seals, wherein outer edges of said plurality of raised seals and an inner edge of said peripheral raised region form a first channel therebetween, and wherein adjacent raised seals form grooves therebetween said wafer clamp further comprising a raised central region co-planar with said plurality of raised seals, wherein an outer edge of said central region and inner edges of said plurality of raised seals form a second channel therebetween, and wherein a plurality of gas supply grooves extend through said raised central region from a central area of said wafer clamp to said second channel; and injecting a gas through said gas supply grooves in said wafer clamp, wherein said gas flows outward from said central area, into said second channel, through said grooves and into said first channel, thereby to prevent monomer molecule deposition on the backside of said wafer.
Claim 2
Independent Claim
181 words
A method of backside and edge exclusion of polymer film on a wafer during CVD, comprising the steps of: securing said wafer to a wafer clamp, said wafer clamp comprising a peripheral raised region and a plurality of raised seals, wherein outer edges of said plurality of raised seals and an inner edge of said peripheral raised region form a first channel therebetween, and wherein adjacent raised seals form grooves therebetween said wafer clamp further comprising a raised central region co-planar with said plurality of raised seals, wherein an outer edge of said central region and inner edges of said plurality of raised seals form a second channel therebetween, and wherein a plurality of gas supply grooves extend through said raised central region from a central area of said wafer clamp to said second channel; and injecting a gas through said gas supply grooves in said wafer clamp, wherein said gas flows outward from said central area, into said second channel, through said grooves and into said first channel, thereby to prevent monomer molecule deposition on the backside of said wafer.
Claim 3
Dependent Claim
22 words
The method of claim 1 , wherein the portions of said wafer secured to said wafer clamp exclude monomer molecule deposition therebetween.
Claim 4
Dependent Claim
19 words
The method of claim 1 , wherein the flow rate of said gas is between 2 and 7 sccm.
Claim 5
Dependent Claim
13 words
The method of claim 1 , wherein said gas is an inert gas.
Claim 6
Dependent Claim
23 words
The method of claim 1 , wherein said gas is selected from the group consisting of Helium, Neon, Nitrogen, Argon, Krypton, and Xenon.
Claim 7
Dependent Claim
11 words
The method of claim 5 , wherein said gas is Argon.
Claim 8
Dependent Claim
18 words
The method of claim 1 , wherein said wafer is secured to said wafer clamp by electrostatic force.
Claim 9
Dependent Claim
28 words
The method of claim 1 , wherein said gas flows across the edge of said wafer to prevent polymer film from forming on the edge of said wafer.
Claim 10
Dependent Claim
31 words
The method of claim 1 , further comprising the step of placing a showerhead above the outer diameter of said wafer to redirect process gases across the surface of said wafer.
Claim 11
Dependent Claim
24 words
The method of claim 9 , wherein said showerhead is positioned between 0.5 and approximately 5 mm above the upper surface of said wafer.
Claim 12
Dependent Claim
23 words
The method of claim 9 , wherein the outer edge of said showerhead is positioned approximately above the outer edge of said wafer.
Claim 13
Dependent Claim
15 words
The method of claim 1 , wherein said showerhead is rounded at its lower edge.