US7045430B2
Expired / Lapsed
US
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Atomic layer-deposited LaAlO3 films for gate dielectrics
Assignee: Micron Technology Inc
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Filing: 2002-05-02
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Granted: 2006-05-16
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Expires: 2022-05-02
Abstract
Abstract A dielectric film containing LaAlO 3 and method of fabricating a dielectric film contained LaAlO 3 produce a reliable gate dielectric having a thinner equivalent oxide thickness than attainable using SiO 2 . The LaAlO 3 gate dielectrics formed are thermodynamically stable such that these gate dielectrics will have minimal reactions with a silicon substrate or other structures during processing. A LaAlO 3 gate dielectric is formed by atomic layer deposition employing a lanthanum sequence and an aluminum sequence. A lanthanum sequence uses La(thd) 3 (thd=2,2,6,6-tetramethyl-3,5-heptanedione) and ozone. An aluminum sequence uses either trimethylaluminum, Al(CH 3 ) 3 , or DMEAA, an adduct of alane (AlH 3 ) and dimethylethylamine [N(CH 3 ) 2 (C 2 H 5 )], with distilled water vapor.
Inventors
- 👤 Kie Y. Ahn
- 👤 Leonard Forbes
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 00:43
CPC Classifications
H; H10; H10D; H10D64/00; H10D64/01; H10D64/013; H10D64/01302; H10D64/01332; H10D64/01336; H10D64/0134; H10D64/01342; H10D64/60; H10D64/66; H10D64/68; H10D64/681; H10D64/685; H10D64/691; H10D64/01344; H10D64/693; H10P; H10P14/00; H10P14/60; H10P14/63; H10P14/6326; H10P14/6328; H10P14/6334; H10P14/6339; H10P14/69; H10P14/692; H10P14/6938; H10P14/6939; H10P14/69391; H10P14/69396; H10P14/69397
Claims Analysis
Total Claims: 69
Claim 1
Independent Claim
63 words
A method of forming a dielectric film comprising: pulsing a lanthanum containing precursor into a reaction chamber containing a substrate; pulsing an aluminum containing precursor into the reaction chamber; and controlling the pulsing of the lanthanum containing precursor and the pulsing of the aluminum containing precursor to form by atomic layer deposition a dielectric layer containing LaAlO 3 with a predetermined dielectric constant.
Claim 2
Independent Claim
63 words
A method of forming a dielectric film comprising: pulsing a lanthanum containing precursor into a reaction chamber containing a substrate; pulsing an aluminum containing precursor into the reaction chamber; and controlling the pulsing of the lanthanum containing precursor and the pulsing of the aluminum containing precursor to form by atomic layer deposition a dielectric layer containing LaAlO 3 with a predetermined dielectric constant.
Claim 3
Dependent Claim
29 words
The method of claim 1 , wherein pulsing a lanthanum containing precursor into a reaction chamber is followed by pulsing a first oxygen containing precursor into the reaction chamber.
Claim 4
Dependent Claim
29 words
The method of claim 1 , wherein pulsing an aluminum containing precursor into the reaction chamber is followed by pulsing a second oxygen containing precursor into the reaction chamber.
Claim 5
Dependent Claim
30 words
The method of claim 1 , wherein the substrate is maintained at a selected temperature for each pulsing of a precursor, the selected temperature set independently for pulsing each precursor.
Claim 6
Dependent Claim
23 words
The method of claim 1 , wherein each pulsing of a precursor is followed by purging the reaction chamber with a purging gas.
Claim 7
Dependent Claim
26 words
The method of claim 1 , further comprising repeating for a number of cycles the pulsing of the lanthanum containing precursor, and the aluminum containing precursor.
Claim 8
Independent Claim
87 words
A method of forming a dielectric film comprising: pulsing a lanthanum containing source gas into a reaction chamber containing a substrate; pulsing a first oxygen containing source gas into the reaction chamber; pulsing an aluminum containing source gas into the reaction chamber; pulsing a second oxygen containing source gas into the reaction chamber; and controlling the pulsing of the lanthanum containing precursor and the pulsing of the aluminum containing precursor to form by atomic layer deposition a dielectric layer containing LaAlO 3 with a predetermined dielectric constant.
Claim 9
Independent Claim
87 words
A method of forming a dielectric film comprising: pulsing a lanthanum containing source gas into a reaction chamber containing a substrate; pulsing a first oxygen containing source gas into the reaction chamber; pulsing an aluminum containing source gas into the reaction chamber; pulsing a second oxygen containing source gas into the reaction chamber; and controlling the pulsing of the lanthanum containing precursor and the pulsing of the aluminum containing precursor to form by atomic layer deposition a dielectric layer containing LaAlO 3 with a predetermined dielectric constant.
Claim 10
Dependent Claim
15 words
The method of claim 7 , wherein the first oxygen containing source gas includes ozone.
Claim 11
Dependent Claim
17 words
The method of claim 7 , wherein the second oxygen containing source gas includes distilled water vapor.
Claim 12
Dependent Claim
15 words
The method of claim 7 , wherein the second oxygen containing source gas includes oxygen.
Claim 13
Dependent Claim
34 words
The method of claim 7 , wherein a pulsing period of time, a number of times the source is pulsed into the substrate, and a substrate temperature are independently controlled for each source gas.
Claim 14
Dependent Claim
58 words
The method of claim 11 , wherein the pulsing period of time, the number of times the source is pulsed into the substrate, and the substrate temperature are controlled for each source gas to form a dielectric film containing LaAlO 3 , the dielectric film having a dielectric constant in the range from about 9 to about 30.
Claim 15
Dependent Claim
40 words
The method of claim 7 , further comprising repeating for a number of cycles the pulsing of the lanthanum containing source gas, the first oxygen containing source gas, the aluminum containing source gas, and the second oxygen containing source gas.
Claim 16
Dependent Claim
55 words
The method of claim 13 , wherein repeating for a number of cycles the pulsing of the lanthanum containing source gas, the first oxygen containing source gas, the aluminum containing source gas, and the second oxygen containing source gas is followed by annealing at a temperature ranging from about 800° C. to about 900° C.
Claim 17
Independent Claim
67 words
A method of forming a dielectric film comprising: pulsing a La(thd) 3 (thd=2,2,6,6-tetramethyl-3,5-heptanedione) source gas into a reaction chamber containing a substrate; pulsing a first oxygen containing source gas into the reaction chamber; pulsing an aluminum containing source gas into the reaction chamber; and pulsing a second oxygen containing source gas into the reaction chamber to form a dielectric film containing LaAlO 3 by atomic layer deposition.
Claim 18
Independent Claim
67 words
A method of forming a dielectric film comprising: pulsing a La(thd) 3 (thd=2,2,6,6-tetramethyl-3,5-heptanedione) source gas into a reaction chamber containing a substrate; pulsing a first oxygen containing source gas into the reaction chamber; pulsing an aluminum containing source gas into the reaction chamber; and pulsing a second oxygen containing source gas into the reaction chamber to form a dielectric film containing LaAlO 3 by atomic layer deposition.
Claim 19
Dependent Claim
38 words
The method of claim 16 , wherein pulsing a La(thd) 3 (thd=2,2,6,6-tetramethyl-3,5-heptanedione) source gas into a reaction chamber is perfonned with the substrate maintained at a temperature ranging from about 180 ° C. to about 425 ° C.
Claim 20
Dependent Claim
32 words
The method of claim 16 , wherein pulsing a La(thd) 3 (thd=2,2,6,6-tetramethyl-3,5-heptanedione) source gas into a reaction chamber is performed at a pressure ranging from about 2 mbar to about 3 mbar.
Claim 21
Dependent Claim
34 words
The method of claim 15 , wherein a pulsing period of time, a number of times the source is pulsed into the substrate, and a substrate temperature are independently controlled for each source gas.
Claim 22
Dependent Claim
58 words
The method of claim 18 , wherein the pulsing period of time, the number of times the source is pulsed into the substrate, and the substrate temperature are controlled for each source gas to form a dielectric film containing LaAlO 3 , the dielectric film having a dielectric constant in the range from about 9 to about 30.
Claim 23
Independent Claim
65 words
A method of forming a dielectric film comprising: pulsing a lanthanum containing source gas into a reaction chamber containing a substrate; pulsing a first oxygen containing source gas into the reaction chamber; pulsing a trimethylaluminum source gas into the reaction chamber; and pulsing a second oxygen containing source gas into the reaction chamber to form a dielectric film containing LaAlO 3 by atomic layer deposition.
Claim 24
Independent Claim
65 words
A method of forming a dielectric film comprising: pulsing a lanthanum containing source gas into a reaction chamber containing a substrate; pulsing a first oxygen containing source gas into the reaction chamber; pulsing a trimethylaluminum source gas into the reaction chamber; and pulsing a second oxygen containing source gas into the reaction chamber to form a dielectric film containing LaAlO 3 by atomic layer deposition.
Claim 25
Dependent Claim
46 words
The method of claim 20 , wherein pulsing the trimethylaluminum source gas into the reaction chamber is performed with the substrate maintained at a temperature ranging from about 350° C. to about 370° C. with the reaction chamber having chamber walls maintained at about 150° C.
Claim 26
Dependent Claim
25 words
The method of claim 21 , wherein pulsing a trimethylaluminum source gas into the reaction chamber is performed at a pressure of about 230 mTorr.
Claim 27
Dependent Claim
34 words
The method of claim 20 , wherein a pulsing period of time, a number of times the source is pulsed into the substrate, and a substrate temperature are independently controlled for each source gas.
Claim 28
Dependent Claim
58 words
The method of claim 23 , wherein the pulsing period of time, the number of times the source is pulsed into the substrate, and the substrate temperature are controlled for each source gas to form a dielectric film containing LaAlO 3 , the dielectric film having a dielectric constant in the range from about 9 to about 30.
Claim 29
Independent Claim
65 words
A method of forming a dielectric film comprising: pulsing a lanthanum containing source gas into a reaction chamber containing a substrate; pulsing a first oxygen containing source gas into the reaction chamber; pulsing a DMEAA source gas into the reaction chamber; and pulsing a second oxygen containing source gas into the reaction chamber to form a dielectric film containing LaAlO 3 by atomic layer deposition.
Claim 30
Independent Claim
65 words
A method of forming a dielectric film comprising: pulsing a lanthanum containing source gas into a reaction chamber containing a substrate; pulsing a first oxygen containing source gas into the reaction chamber; pulsing a DMEAA source gas into the reaction chamber; and pulsing a second oxygen containing source gas into the reaction chamber to form a dielectric film containing LaAlO 3 by atomic layer deposition.
Claim 31
Dependent Claim
35 words
The method of claim 25 , wherein pulsing a DMEAA source gas into the reaction chamber is performed with the substrate maintained at a temperature ranging from about 100 ° C. to about 125° C.
Claim 32
Dependent Claim
25 words
The method of claim 26 , wherein pulsing a DMEAA source gas into the reaction chamber is performed at a pressure of about 30 mTorr.
Claim 33
Dependent Claim
34 words
The method of claim 25 , wherein a pulsing period of time, a number of times the source is pulsed into the substrate, and a substrate temperature are independently controlled for each source gas.
Claim 34
Dependent Claim
58 words
The method of claim 31 , wherein the pulsing period of time, the number of times the source is pulsed into the substrate, and the substrate temperature are controlled for each source gas to form a dielectric film containing LaAlO 3 , the dielectric film having a dielectric constant in the range from about 9 to about 30.
Claim 35
Independent Claim
66 words
A method of forming a dielectric film comprising: pulsing a La(thd) 3 (thd=2,2,6,6-tetramethyl-3,5-heptanedione) source gas into a reaction chamber containing a substrate; pulsing a first oxygen containing source gas into the reaction chamber; pulsing a trimethylaluminum source gas into the reaction chamber; and pulsing a second oxygen containing source gas into the reaction chamber to form a dielectric film containing LaAlO 3 by atomic layer deposition.
Claim 36
Independent Claim
66 words
A method of forming a dielectric film comprising: pulsing a La(thd) 3 (thd=2,2,6,6-tetramethyl-3,5-heptanedione) source gas into a reaction chamber containing a substrate; pulsing a first oxygen containing source gas into the reaction chamber; pulsing a trimethylaluminum source gas into the reaction chamber; and pulsing a second oxygen containing source gas into the reaction chamber to form a dielectric film containing LaAlO 3 by atomic layer deposition.
Claim 37
Dependent Claim
27 words
The method of claim 30 , wherein pulsing a La(thd) 3 (thd=2,2,6,6-tetramethyl-3,5-heptanedione) source gas into a reaction chamber is followed by purging the reaction chamber with nitrogen.
Claim 38
Dependent Claim
25 words
The method of claim 31 , wherein pulsing a trimethylaluminum source gas into the reaction chamber is followed by purging the reaction chamber with argon.
Claim 39
Independent Claim
66 words
A method of forming a dielectric film comprising: pulsing a La(thd) 3 (thd=2,2,6,6-tetramethyl-3,5-heptanedione) source gas into a reaction chamber containing a substrate; pulsing a first oxygen containing source gas into the reaction chamber; pulsing a DMEAA source gas into the reaction chamber; and pulsing a second oxygen containing source gas into the reaction chamber to form a dielectric film containing LaAlO 3 by atomic layer deposition.
Claim 40
Independent Claim
66 words
A method of forming a dielectric film comprising: pulsing a La(thd) 3 (thd=2,2,6,6-tetramethyl-3,5-heptanedione) source gas into a reaction chamber containing a substrate; pulsing a first oxygen containing source gas into the reaction chamber; pulsing a DMEAA source gas into the reaction chamber; and pulsing a second oxygen containing source gas into the reaction chamber to form a dielectric film containing LaAlO 3 by atomic layer deposition.
Claim 41
Dependent Claim
27 words
The method of claim 33 , wherein pulsing a La(thd) 3 (thd=2,2,6,6-tetramethyl-3,5-heptanedione) source gas into a reaction chamber is followed by purging the reaction chamber with nitrogen.
Claim 42
Dependent Claim
25 words
The method of claim 33 , wherein pulsing a DMEAA source gas into the reaction chamber is followed by purging the reaction chamber with hydrogen.
Claim 43
Independent Claim
128 words
A method of forming a transistor, comprising: forming first and second source/drain regions in a substrate; forming a body region between the first and second source/drain regions; forming a film on the body region between the first and second source/drain regions, comprising: pulsing a lanthanum containing precursor into a reaction chamber containing the substrate; pulsing a first oxygen containing precursor into the reaction chamber; pulsing an aluminum containing precursor into the reaction chamber; pulsing a second oxygen containing precursor into the reaction chamber; and controlling the pulsing of the lanthanum containing precursor and the pulsing of the aluminum containing precursor to form by atomic layer deposition a dielectric layer containing LaAlO 3 with a predetermined dielectric constant; and coupling a gate to the film containing LaAlO 3 .
Claim 44
Independent Claim
128 words
A method of forming a transistor, comprising: forming first and second source/drain regions in a substrate; forming a body region between the first and second source/drain regions; forming a film on the body region between the first and second source/drain regions, comprising: pulsing a lanthanum containing precursor into a reaction chamber containing the substrate; pulsing a first oxygen containing precursor into the reaction chamber; pulsing an aluminum containing precursor into the reaction chamber; pulsing a second oxygen containing precursor into the reaction chamber; and controlling the pulsing of the lanthanum containing precursor and the pulsing of the aluminum containing precursor to form by atomic layer deposition a dielectric layer containing LaAlO 3 with a predetermined dielectric constant; and coupling a gate to the film containing LaAlO 3 .
Claim 45
Dependent Claim
28 words
The method of claim 36 , wherein pulsing a lanthanum containing precursor into a reaction chamber includes pulsing a La(thd) 3 (thd=2,2,6,6-tetramethyl-3,5-heptanedione) source gas into the reaction chamber.
Claim 46
Dependent Claim
26 words
The method of claim 36 , wherein pulsing an aluminum containing precursor into the reaction chamber includes pulsing a DMEAA source gas into the reaction chamber.
Claim 47
Dependent Claim
26 words
The method of claim 36 , wherein pulsing an aluminum containing precursor into the reaction chamber includes pulsing a trimethylaluminum source gas into the reaction chamber.
Claim 48
Independent Claim
205 words
A method of forming a memory array, comprising: forming a number of access transistors, comprising: forming first and second source/drain regions; forming a body region between the first and second source/drain regions; forming a film containing LaAlO 3 on the body region between the first and second source/drain regions, comprising: pulsing a lanthanum containing source gas into a reaction chamber containing a substrate; pulsing a first oxygen containing source gas into the reaction chamber; pulsing an aluminum containing source gas into a reaction chamber; and pulsing a second oxygen containing source gas into the reaction chamber; and controlling the pulsing of the lanthanum containing source gas and the pulsing of the aluminum containing source gas to form by atomic layer deposition a dielectric layer containing LaAlO 3 with a predetermined dielectric constant; and coupling a gate to the film containing LaAlO 3 ; forming a number of word lines coupled to a number of the gates of the number of access transistors; forming a number of source lines coupled to a number of the first source/drain regions of the number of access transistors; and forming a number of bit lines coupled to a number of the second source/drain regions of the number of access transistors.
Claim 49
Independent Claim
205 words
A method of forming a memory array, comprising: forming a number of access transistors, comprising: forming first and second source/drain regions; forming a body region between the first and second source/drain regions; forming a film containing LaAlO 3 on the body region between the first and second source/drain regions, comprising: pulsing a lanthanum containing source gas into a reaction chamber containing a substrate; pulsing a first oxygen containing source gas into the reaction chamber; pulsing an aluminum containing source gas into a reaction chamber; and pulsing a second oxygen containing source gas into the reaction chamber; and controlling the pulsing of the lanthanum containing source gas and the pulsing of the aluminum containing source gas to form by atomic layer deposition a dielectric layer containing LaAlO 3 with a predetermined dielectric constant; and coupling a gate to the film containing LaAlO 3 ; forming a number of word lines coupled to a number of the gates of the number of access transistors; forming a number of source lines coupled to a number of the first source/drain regions of the number of access transistors; and forming a number of bit lines coupled to a number of the second source/drain regions of the number of access transistors.
Claim 50
Dependent Claim
28 words
The method of claim 40 , wherein pulsing a lanthanum containing precursor into a reaction chamber includes pulsing a La(thd) 3 (thd=2,2,6,6-tetramethyl-3,5-heptanedione) source gas into the reaction chamber.
Claim 51
Dependent Claim
26 words
The method of claim 41 , wherein pulsing an aluminum containing precursor into the reaction chamber includes pulsing a DMEAA source gas into the reaction chamber.
Claim 52
Dependent Claim
26 words
The method of claim 41 , wherein pulsing an aluminum containing precursor into the reaction chamber includes pulsing a trimethylaluminum source gas into the reaction chamber.
Claim 53
Independent Claim
211 words
A method of forming an information handling system, comprising: providing a processor; providing a memory array, wherein the memory array is formed by a method comprising: forming a number of access transistors, comprising: forming first and second source/drain regions; forming a body region between the first and second source/drain regions; forming a film containing LaAlO 3 on the body region between the first and second source/drain regions, comprising: pulsing a lanthanum containing source gas into a reaction chamber containing a substrate; pulsing an aluminum containing source gas into a reaction chamber; and controlling the pulsing of the lanthanum containing source gas and the pulsing of the aluminum containing source gas to form by atomic layer deposition a dielectric layer containing LaAlO 3 with a predetermined dielectric constant; and coupling a gate to the film containing LaAlO 3 ; forming a number of word lines coupled to a number of the gates of the number of access transistors; forming a number of source lines coupled to a number of the first source/drain regions of the number of access transistors; forming a number of bit lines coupled to a number of the second source/drain regions of the number of access transistors; and coupling the processor to the memory array using a system bus.
Claim 54
Independent Claim
211 words
A method of forming an information handling system, comprising: providing a processor; providing a memory array, wherein the memory array is formed by a method comprising: forming a number of access transistors, comprising: forming first and second source/drain regions; forming a body region between the first and second source/drain regions; forming a film containing LaAlO 3 on the body region between the first and second source/drain regions, comprising: pulsing a lanthanum containing source gas into a reaction chamber containing a substrate; pulsing an aluminum containing source gas into a reaction chamber; and controlling the pulsing of the lanthanum containing source gas and the pulsing of the aluminum containing source gas to form by atomic layer deposition a dielectric layer containing LaAlO 3 with a predetermined dielectric constant; and coupling a gate to the film containing LaAlO 3 ; forming a number of word lines coupled to a number of the gates of the number of access transistors; forming a number of source lines coupled to a number of the first source/drain regions of the number of access transistors; forming a number of bit lines coupled to a number of the second source/drain regions of the number of access transistors; and coupling the processor to the memory array using a system bus.
Claim 55
Dependent Claim
28 words
The method of claim 44 , wherein pulsing a lanthanum containing precursor into a reaction chamber includes pulsing a La(thd) 3 (thd=2,2,6,6-tetramethyl-3,5-heptanedione) source gas into the reaction chamber.
Claim 56
Dependent Claim
26 words
The method of claim 44 , wherein pulsing an aluminum containing precursor into the reaction chamber includes pulsing a DMEAA source gas into the reaction chamber.
Claim 57
Dependent Claim
26 words
The method of claim 44 , wherein pulsing an aluminum containing precursor into the reaction chamber includes pulsing a trimethylaluminum source gas into the reaction chamber.
Claim 58
Independent Claim
107 words
A method of forming a transistor, comprising: forming first and second source/drain regions in a substrate; forming a body region between the first and second source/drain regions; forming a film on the body region between the first and second source/drain regions, comprising: pulsing a La(thd) 3 (thd=2,2,6,6-tetramethyl-3,5-heptanedione) precursor into a reaction chamber containing the substrate; pulsing a first oxygen containing precursor into the reaction chamber; pulsing an aluminum containing precursor into the reaction chamber; pulsing a second oxygen containing precursor into the reaction chamber to form a dielectric film containing LaAlO 3 by atomic layer deposition; and coupling a gate to the film containing LaAlO 3 .
Claim 59
Independent Claim
107 words
A method of forming a transistor, comprising: forming first and second source/drain regions in a substrate; forming a body region between the first and second source/drain regions; forming a film on the body region between the first and second source/drain regions, comprising: pulsing a La(thd) 3 (thd=2,2,6,6-tetramethyl-3,5-heptanedione) precursor into a reaction chamber containing the substrate; pulsing a first oxygen containing precursor into the reaction chamber; pulsing an aluminum containing precursor into the reaction chamber; pulsing a second oxygen containing precursor into the reaction chamber to form a dielectric film containing LaAlO 3 by atomic layer deposition; and coupling a gate to the film containing LaAlO 3 .
Claim 60
Independent Claim
125 words
A method of forming a transistor, comprising: forming first and second source/drain regions in a substrate; forming a body region between the first and second source/drain regions; forming a film on the body region between the first and second source/drain regions, comprising: pulsing a lanthanum containing precursor into a reaction chamber containing the substrate; pulsing a first oxygen containing precursor into the reaction chamber; pulsing an aluminum containing precursor into the reaction chamber; pulsing a second oxygen containing precursor into the reaction chamber to form a dielectric film containing LaAlO 3 by atomic layer deposition, wherein the aluminum containing precursor is selected from a group consisting of a DMEAA precursor and a trimethylaluminum precursor and coupling a gate to the film containing LaAlO 3 .
Claim 61
Independent Claim
125 words
A method of forming a transistor, comprising: forming first and second source/drain regions in a substrate; forming a body region between the first and second source/drain regions; forming a film on the body region between the first and second source/drain regions, comprising: pulsing a lanthanum containing precursor into a reaction chamber containing the substrate; pulsing a first oxygen containing precursor into the reaction chamber; pulsing an aluminum containing precursor into the reaction chamber; pulsing a second oxygen containing precursor into the reaction chamber to form a dielectric film containing LaAlO 3 by atomic layer deposition, wherein the aluminum containing precursor is selected from a group consisting of a DMEAA precursor and a trimethylaluminum precursor and coupling a gate to the film containing LaAlO 3 .
Claim 62
Independent Claim
179 words
A method of forming a memory array, comprising: forming a number of access transistors, comprising: forming first and second source/drain regions; forming a body region between the first and second source/drain regions; forming a film on the body region between the first and second source/drain regions, comprising: pulsing a La(thd) 3 (thd=2,2,6,6-tetramethyl-3,5-heptanedione) source gas into a reaction chamber containing a substrate; pulsing a first oxygen containing source gas into the reaction chamber; pulsing an aluminum containing source gas into a reaction chamber; and pulsing a second oxygen containing source gas into the reaction chamber to form a dielectric film containing LaAlO 3 by atomic layer deposition; and coupling a gate to the film containing LaAlO 3 ; forming a number of word lines coupled to a number of the gates of the number of access transistors; forming a number of source lines coupled to a number of the first source/drain regions of the number of access transistors; and forming a number of bit lines coupled to a number of the second source/drain regions of the number of access transistors.
Claim 63
Independent Claim
179 words
A method of forming a memory array, comprising: forming a number of access transistors, comprising: forming first and second source/drain regions; forming a body region between the first and second source/drain regions; forming a film on the body region between the first and second source/drain regions, comprising: pulsing a La(thd) 3 (thd=2,2,6,6-tetramethyl-3,5-heptanedione) source gas into a reaction chamber containing a substrate; pulsing a first oxygen containing source gas into the reaction chamber; pulsing an aluminum containing source gas into a reaction chamber; and pulsing a second oxygen containing source gas into the reaction chamber to form a dielectric film containing LaAlO 3 by atomic layer deposition; and coupling a gate to the film containing LaAlO 3 ; forming a number of word lines coupled to a number of the gates of the number of access transistors; forming a number of source lines coupled to a number of the first source/drain regions of the number of access transistors; and forming a number of bit lines coupled to a number of the second source/drain regions of the number of access transistors.
Claim 64
Independent Claim
200 words
A method of forming a memory array, comprising: forming a number of access transistors, comprising: forming first and second source/drain regions; forming a body region between the first and second source/drain regions; forming a film on the body region between the first and second source/drain regions, comprising: pulsing a lanthanum containing source gas into a reaction chamber containing a substrate; pulsing a first oxygen containing source gas into the reaction chamber; pulsing an aluminum containing source gas into a reaction chamber; and pulsing a second oxygen containing source gas into the reaction chamber to form a dielectric film containing LaAlO 3 by atomic layer deposition, wherein the aluminum containing source gas is selected from a group consisting of a DMEAA source gas and a trimethylaluminum source gas; and coupling a gate to the film containing LaAlO 3 ; forming a number of word lines coupled to a number of the gates of the number of access transistors; forming a number of source lines coupled to a number of the first source/drain regions of the number of access transistors; and forming a number of bit lines coupled to a number of the second source/drain regions of the number of access transistors.
Claim 65
Independent Claim
200 words
A method of forming a memory array, comprising: forming a number of access transistors, comprising: forming first and second source/drain regions; forming a body region between the first and second source/drain regions; forming a film on the body region between the first and second source/drain regions, comprising: pulsing a lanthanum containing source gas into a reaction chamber containing a substrate; pulsing a first oxygen containing source gas into the reaction chamber; pulsing an aluminum containing source gas into a reaction chamber; and pulsing a second oxygen containing source gas into the reaction chamber to form a dielectric film containing LaAlO 3 by atomic layer deposition, wherein the aluminum containing source gas is selected from a group consisting of a DMEAA source gas and a trimethylaluminum source gas; and coupling a gate to the film containing LaAlO 3 ; forming a number of word lines coupled to a number of the gates of the number of access transistors; forming a number of source lines coupled to a number of the first source/drain regions of the number of access transistors; and forming a number of bit lines coupled to a number of the second source/drain regions of the number of access transistors.
Claim 66
Independent Claim
178 words
A method of forming an information handling system, comprising: providing a processor; and coupling a memory array to the processor using a system bus, wherein forming the memory array includes: forming a number of access transistors, comprising: forming first and second source/drain regions; forming a body region between the first and second source/drain regions; forming a film on the body region between the first and second source/drain regions, comprising: pulsing a La(thd) 3 (thd=2,2,6,6-tetramethyl-3,5-heptanedione) source gas into a reaction chamber containing a substrate; pulsing an aluminum containing source gas into a reaction chamber to form a dielectric film containing LaAlO 3 by atomic layer deposition; and coupling a gate to the film containing LaAlO 3 ; forming a number of word lines coupled to a number of the gates of the number of access transistors; forming a number of source lines coupled to a number of the first source/drain regions of the number of access transistors; and forming a number of bit lines coupled to a number of the second source/drain regions of the number of access transistors.
Claim 67
Independent Claim
178 words
A method of forming an information handling system, comprising: providing a processor; and coupling a memory array to the processor using a system bus, wherein forming the memory array includes: forming a number of access transistors, comprising: forming first and second source/drain regions; forming a body region between the first and second source/drain regions; forming a film on the body region between the first and second source/drain regions, comprising: pulsing a La(thd) 3 (thd=2,2,6,6-tetramethyl-3,5-heptanedione) source gas into a reaction chamber containing a substrate; pulsing an aluminum containing source gas into a reaction chamber to form a dielectric film containing LaAlO 3 by atomic layer deposition; and coupling a gate to the film containing LaAlO 3 ; forming a number of word lines coupled to a number of the gates of the number of access transistors; forming a number of source lines coupled to a number of the first source/drain regions of the number of access transistors; and forming a number of bit lines coupled to a number of the second source/drain regions of the number of access transistors.
Claim 68
Independent Claim
199 words
A method of forming an information handling system, comprising: providing a processor; and coupling a memory array to the processor using a system bus, wherein forming the memory array includes: forming a number of access transistors, comprising: forming first and second source/drain regions; forming a body region between the first and second source/drain regions; forming a film on the body region between the first and second source/drain regions, comprising: pulsing a lanthanum containing source gas into a reaction chamber containing a substrate; pulsing an aluminum containing source gas into a reaction chamber to form a dielectric film containing LaAlO 3 by atomic layer deposition, wherein the aluminum containing source gas is selected from a group consisting of a DMEAA source gas and a trimethylaluminum source gas; and coupling a gate to the film containing LaAlO 3 ; forming a number of word lines coupled to a number of the gates of the number of access transistors; forming a number of source lines coupled to a number of the first source/drain regions of the number of access transistors; and forming a number of bit lines coupled to a number of the second source/drain regions of the number of access transistors.
Claim 69
Independent Claim
199 words
A method of forming an information handling system, comprising: providing a processor; and coupling a memory array to the processor using a system bus, wherein forming the memory array includes: forming a number of access transistors, comprising: forming first and second source/drain regions; forming a body region between the first and second source/drain regions; forming a film on the body region between the first and second source/drain regions, comprising: pulsing a lanthanum containing source gas into a reaction chamber containing a substrate; pulsing an aluminum containing source gas into a reaction chamber to form a dielectric film containing LaAlO 3 by atomic layer deposition, wherein the aluminum containing source gas is selected from a group consisting of a DMEAA source gas and a trimethylaluminum source gas; and coupling a gate to the film containing LaAlO 3 ; forming a number of word lines coupled to a number of the gates of the number of access transistors; forming a number of source lines coupled to a number of the first source/drain regions of the number of access transistors; and forming a number of bit lines coupled to a number of the second source/drain regions of the number of access transistors.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2009-05-15 | 2009-11-14 | 2010-05-16 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2013-05-15 | 2013-11-14 | 2014-05-16 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2017-05-15 | 2017-11-14 | 2018-05-16 | $7700.00 | Window Closed / Lapsed |