US6420230B1
Expired / Lapsed
US
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Capacitor fabrication methods and capacitor constructions
Assignee: Micron Technology Inc
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Filing: 2000-08-31
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Granted: 2002-07-16
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Expires: 2020-08-31
Abstract
Abstract A capacitor fabrication method may include forming a first capacitor electrode over a substrate and atomic layer depositing an insulative barrier layer to oxygen diffusion over the first electrode. A capacitor dielectric layer may be formed over the first electrode and a second capacitor electrode may be formed over the dielectric layer. The barrier layer may include Al 2 O 3 . A capacitor fabrication method may also include forming a first capacitor electrode over a substrate, chemisorbing a layer of a first precursor at least one monolayer thick over the first electrode, and chemisorbing a layer of a second precursor at least one monolayer thick on the first precursor layer. A chemisorption product of the first and second precursors may be comprised by a layer of an insulative barrier material. The first precursor may include H 2 O and the second precursor may include trimethyl aluminum.
Inventors
- 👤 Garo J. Derderian
- 👤 Gurtej S. Sandhu
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 01:26
CPC Classifications
H; H10; H10D; H10D1/00; H10D1/60; H10D1/68; H10D1/682; H10D1/684; H10D1/01; H10D1/041; H10D1/042; H10D1/692; H10D1/711; H10D1/712; H10D1/716; H10P; H10P14/00; H10P14/60; H10P14/63; H10P14/6326; H10P14/6328; H10P14/6334; H10P14/6339; H10P14/69; H10P14/692; H10P14/6938; H10P14/6939; H10P14/69391
Claims Analysis
Total Claims: 34
Claim 1
Independent Claim
92 words
A capacitor fabrication method comprising: forming a first capacitor electrode over a substrate; atomic layer depositing an insulative barrier layer to oxygen diffusion over the first electrode, the barrier layer having a thickness of less than 10 Angstroms and comprising Al 2 O 3 ; forming a capacitor dielectric layer over the first electrode; and forming a second capacitor electrode over the dielectric layer and the barrier layer, at least one of the dielectric layer and the second electrode comprising oxygen that is diffusable into the first electrode absent the barrier layer.
Claim 2
Dependent Claim
92 words
A capacitor fabrication method comprising: forming a first capacitor electrode over a substrate; atomic layer depositing an insulative barrier layer to oxygen diffusion over the first electrode, the barrier layer having a thickness of less than 10 Angstroms and comprising Al 2 O 3 ; forming a capacitor dielectric layer over the first electrode; and forming a second capacitor electrode over the dielectric layer and the barrier layer, at least one of the dielectric layer and the second electrode comprising oxygen that is diffusable into the first electrode absent the barrier layer.
Claim 3
Dependent Claim
14 words
The method of claim 1 wherein the second capacitor electrode comprises RuO x .
Claim 4
Dependent Claim
21 words
The method of claim 1 wherein the atomic layer deposited barrier layer has a thickness of less than about 6 Angstroms.
Claim 5
Dependent Claim
16 words
The method of claim 1 wherein the atomic layer deposited barrier layer contacts the dielectric layer.
Claim 6
Dependent Claim
19 words
The method of claim 1 wherein the atomic layer deposited barrier layer consists of Al 2 O 3 .
Claim 7
Dependent Claim
24 words
The method of claim 1 wherein the atomic layer deposited barrier layer exhibits a K factor of greater than about 7 at 20° C.
Claim 8
Dependent Claim
19 words
The method of claim 1 wherein the atomic layer deposited barrier layer exhibits a K factor of about 10.
Claim 9
Dependent Claim
23 words
The method of claim 1 wherein at least one of the first or second electrodes comprises polysilicon and the dielectric layer comprises oxygen.
Claim 10
Dependent Claim
18 words
The method of claim 1 wherein the dielectric layer comprises Ta 2 O 5 or barium strontium titanate.
Claim 11
Dependent Claim
14 words
The method of claim 1 wherein the dielectric layer is over the barrier layer.
Claim 12
Dependent Claim
21 words
The method of claim 10 further comprising atomic layer depositing another insulative barrier layer to oxygen diffusion over the dielectric layer.
Claim 13
Dependent Claim
24 words
The method of claim 1 wherein the forming the first and second electrodes and the dielectric layer occur by other than atomic layer deposition.
Claim 14
Dependent Claim
128 words
A capacitor fabrication method comprising: forming a first capacitor electrode over a substrate; chemisorbing a layer of a first precursor at least one monolayer thick over the first electrode; chemisorbing a layer of a second precursor at least one monolayer thick on the first precursor layer, a chemisorption product of the first and second precursor layers being comprised by a layer of an insulative barrier material to oxygen diffusion, the barrier material layer having a thickness of less than 10 Angstroms; forming a capacitor dielectric layer over the first electrode; and forming a second capacitor electrode over the dielectric layer and the barrier layer, at least one of the dielectric layer and the second electrode comprising oxygen that is diffusable into the first electrode absent the barrier layer.
Claim 15
Dependent Claim
128 words
A capacitor fabrication method comprising: forming a first capacitor electrode over a substrate; chemisorbing a layer of a first precursor at least one monolayer thick over the first electrode; chemisorbing a layer of a second precursor at least one monolayer thick on the first precursor layer, a chemisorption product of the first and second precursor layers being comprised by a layer of an insulative barrier material to oxygen diffusion, the barrier material layer having a thickness of less than 10 Angstroms; forming a capacitor dielectric layer over the first electrode; and forming a second capacitor electrode over the dielectric layer and the barrier layer, at least one of the dielectric layer and the second electrode comprising oxygen that is diffusable into the first electrode absent the barrier layer.
Claim 16
Dependent Claim
18 words
The method of claim 13 wherein the first and second precursor layers each consist essentially of a monolayer.
Claim 17
Dependent Claim
17 words
The method of claim 13 wherein the first and second precursor layers each comprise substantially saturated monolayers.
Claim 18
Dependent Claim
19 words
The method of claim 13 wherein the first and second precursor each consist essentially of only one chemical species.
Claim 19
Dependent Claim
15 words
The method of claim 13 wherein the first precursor is different from the second precursor.
Claim 20
Dependent Claim
19 words
The method of claim 13 wherein the first precursor comprises H 2 O and the second precursor trimethyl aluminum.
Claim 21
Dependent Claim
29 words
The method of claim 13 wherein the dielectric layer is over the barrier layer, further comprising chemisorbing additional alternating first and second precursor layers before forming the dielectric layer.
Claim 22
Dependent Claim
18 words
The method of claim 19 wherein the barrier layer has a thickness of less than about 6 Angstroms.
Claim 23
Dependent Claim
14 words
The method of claim 13 wherein the second capacitor electrode comprises RuO x .
Claim 24
Dependent Claim
16 words
The method of claim 13 wherein the atomic layer deposited barrier layer contacts the dielectric layer.
Claim 25
Dependent Claim
39 words
The method of claim 22 wherein the dielectric layer and barrier layer in combination exhibit a leakage current of less than about 10 −15 amps per cell and yield a capacitance of greater than about 20 femtoFarads per cell.
Claim 26
Dependent Claim
15 words
The method of claim 13 wherein the barrier layer comprises Al 2 O 3 .
Claim 27
Dependent Claim
21 words
The method of claim 13 wherein the barrier layer exhibits a K factor of greater than about 7 at 20° C.
Claim 28
Dependent Claim
16 words
The method of claim 13 wherein the barrier layer exhibits a K factor of about 10.
Claim 29
Dependent Claim
112 words
A capacitor fabrication method comprising: forming an opening in an insulative layer over a substrate, the opening having sides and a bottom; forming a layer of polysilicon over the sides and bottom of the opening; converting the polysilicon layer to a first capacitor electrode comprising hemispherical grain polysilicon; atomic layer depositing an insulative barrier layer to oxygen diffusion on the first electrode, the barrier layer comprising Al 2 O 3 and having a thickness of less than 10 Angstroms; forming a capacitor dielectric layer comprising oxygen on the barrier layer, the oxygen being diffusable into the first electrode absent the barrier layer; and forming a second capacitor electrode over the dielectric layer.
Claim 30
Dependent Claim
112 words
A capacitor fabrication method comprising: forming an opening in an insulative layer over a substrate, the opening having sides and a bottom; forming a layer of polysilicon over the sides and bottom of the opening; converting the polysilicon layer to a first capacitor electrode comprising hemispherical grain polysilicon; atomic layer depositing an insulative barrier layer to oxygen diffusion on the first electrode, the barrier layer comprising Al 2 O 3 and having a thickness of less than 10 Angstroms; forming a capacitor dielectric layer comprising oxygen on the barrier layer, the oxygen being diffusable into the first electrode absent the barrier layer; and forming a second capacitor electrode over the dielectric layer.
Claim 31
Dependent Claim
39 words
The method of claim 27 wherein the dielectric layer and barrier layer in combination exhibit a leakage current of less than about 10 −15 amps per cell and yield a capacitance of greater than about 20 femtoFarads per cell.
Claim 32
Dependent Claim
61 words
The method of claim 27 wherein the forming the barrier layer comprises: chemisorbing a layer of a first precursor at least one monolayer thick over the first electrode; chemisorbing a layer of a second precursor at least one monolayer thick on the first precursor layer, a chemisorption product of the first and second precursor layers being comprised by the barrier layer.
Claim 33
Dependent Claim
14 words
The method of claim 27 wherein the second capacitor electrode comprises RuO x .
Claim 34
Dependent Claim
21 words
The method of claim 27 wherein the barrier layer exhibits a K factor of greater than about 7 to 20° C.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2005-07-15 | 2006-01-14 | 2006-07-16 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2009-07-15 | 2010-01-14 | 2010-07-16 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2013-07-15 | 2014-01-14 | 2014-07-16 | $7700.00 | Window Closed / Lapsed |