US6281142B1
Expired / Lapsed
US
⏱️ 0.0 years remaining
Dielectric cure for reducing oxygen vacancies
Assignee: Micron Technology Inc
•
Filing: 1999-06-04
•
Granted: 2001-08-28
•
Expires: 2019-06-04
Abstract
Abstract A unique electrochemical process fills oxygen vacancies in dielectrics while reducing oxidation of nearby electrodes and conductors. Preferably, an electromagnetic field or bias is applied to a dielectric. The bias causes oxygen vacancies in the dielectric to migrate to the surface of the dielectric. As the oxygen vacancies migrate toward the surface, oxygen ions fill the oxygen vacancies. In one embodiment, a unique plasma treatment provides the oxygen ions that react with the oxygen vacancies. In another embodiment, a unique electrolysis treatment provides the oxygen ions that react with the oxygen vacancies.
Inventors
- 👤 Cem Basceri
- 👤 Gurtej S. Sandhu
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-04 07:48
CPC Classifications
H; H10; H10D; H10D1/00; H10D1/60; H10D1/68; H10D1/682; H10P; H10P95/00; H10D1/692; H10D1/711; H10D1/712
Claims Analysis
Total Claims: 73
Claim 1
Independent Claim
110 words
A method of reducing oxygen vacancies in a high dielectric constant capacitor comprising: depositing a first electrode on a semiconductor substrate; depositing a high constant dielectric above the first electrode, the high constant dielectric having a plurality of oxygen vacancies therein; applying an electrical bias to the high constant dielectric wherein the polarity of the electrical bias causes the oxygen vacancies to migrate towards the surface of the high constant dielectric; and plasma treating the high constant dielectric with a plurality of oxygen ions at a temperature below 500° C. wherein the oxygen ions react to fill at least a portion of the oxygen vacancies from the high constant dielectric.
Claim 2
Independent Claim
110 words
A method of reducing oxygen vacancies in a high dielectric constant capacitor comprising: depositing a first electrode on a semiconductor substrate; depositing a high constant dielectric above the first electrode, the high constant dielectric having a plurality of oxygen vacancies therein; applying an electrical bias to the high constant dielectric wherein the polarity of the electrical bias causes the oxygen vacancies to migrate towards the surface of the high constant dielectric; and plasma treating the high constant dielectric with a plurality of oxygen ions at a temperature below 500° C. wherein the oxygen ions react to fill at least a portion of the oxygen vacancies from the high constant dielectric.
Claim 3
Dependent Claim
22 words
The method of claim 1 wherein the electrical bias causes the oxygen vacancies to migrate to an exposed surface of the dielectric.
Claim 4
Dependent Claim
19 words
The method of claim 1 wherein the act of applying the electric bias applies a voltage to the dielectric.
Claim 5
Dependent Claim
24 words
The method of claim 1 wherein the act of plasma treating occurs between a temperature range of approximately 300° C. to approximately 500° C.
Claim 6
Dependent Claim
24 words
The method of claim 1 wherein the act of plasma treating occurs at a temperature range of approximately 20° C. to approximately 500° C.
Claim 7
Independent Claim
54 words
A method of reducing oxygen vacancies in a dielectric comprising: applying an electromagnetic field to a dielectric to cause oxygen vacancies in the dielectric to migrate towards the surface of the dielectric; and plasma treating the dielectric with oxygen ions which react with at least a portion of the oxygen vacancies in the dielectric.
Claim 8
Independent Claim
54 words
A method of reducing oxygen vacancies in a dielectric comprising: applying an electromagnetic field to a dielectric to cause oxygen vacancies in the dielectric to migrate towards the surface of the dielectric; and plasma treating the dielectric with oxygen ions which react with at least a portion of the oxygen vacancies in the dielectric.
Claim 9
Dependent Claim
20 words
The method of claim 6 wherein the act of applying an electromagnetic field applies an electrical current to the dielectric.
Claim 10
Dependent Claim
20 words
The method of claim 6 wherein the act of applying an electromagnetic field applies an electrical voltage to the dielectric.
Claim 11
Dependent Claim
20 words
The method of claim 6 wherein the act of applying an electromagnetic filed applies a magnetic field to the dielectric.
Claim 12
Dependent Claim
21 words
The method of claim 6 wherein the act of applying an electromagnetic field applies a substantially uniform field across the dielectric.
Claim 13
Independent Claim
91 words
A method of reducing oxygen vacancies in a memory cell comprising: depositing a first electrode over a portion of a poly plug; depositing a dielectric over the first electrode, the dielectric having a plurality of oxygen vacancies therein; applying an electromagnetic field that causes the oxygen vacancies in the dielectric to migrate; plasma treating the dielectric with a plurality of oxygen ions wherein at least a portion of oxygen ions react with the oxygen vacancies in the dielectric; and depositing a second electrode over at least a portion of the dielectric.
Claim 14
Independent Claim
91 words
A method of reducing oxygen vacancies in a memory cell comprising: depositing a first electrode over a portion of a poly plug; depositing a dielectric over the first electrode, the dielectric having a plurality of oxygen vacancies therein; applying an electromagnetic field that causes the oxygen vacancies in the dielectric to migrate; plasma treating the dielectric with a plurality of oxygen ions wherein at least a portion of oxygen ions react with the oxygen vacancies in the dielectric; and depositing a second electrode over at least a portion of the dielectric.
Claim 15
Dependent Claim
18 words
The method of claim 11 wherein the act of plasma treating does not substantially degrade the poly plug.
Claim 16
Dependent Claim
18 words
The method of claim 11 wherein the act of plasma treating does not substantially oxidize the poly plug.
Claim 17
Dependent Claim
21 words
The method of claim 11 wherein the act of depositing the dielectric deposits a layer of BST over the first electrode.
Claim 18
Dependent Claim
22 words
The method of claim 11 wherein the act of depositing the dielectric deposits a layer of tantalum pentoxide over the first electrode.
Claim 19
Dependent Claim
21 words
The method of claim 11 further comprising the act of depositing a barrier layer between the poly plug and the dielectric.
Claim 20
Dependent Claim
15 words
The method of claim 11 wherein the act of depositing the first electrode deposits platinum.
Claim 21
Dependent Claim
24 words
The method of claim 17 further comprising the act of depositing a titanium nitride barrier layer over at least a portion of the platinum.
Claim 22
Dependent Claim
21 words
The method of claim 18 wherein the act of plasma treating the high constant dielectric does not oxidize the poly plug.
Claim 23
Independent Claim
85 words
A method of reducing oxygen vacancies in a metal-insulator-metal structure comprising: depositing a first metal electrode over a substrate; depositing a dielectric over the first metal electrode, the dielectric having a plurality of oxygen vacancies therein; applying an electromagnetic field that causes the oxygen vacancies in the dielectric to migrate; plasma treating the dielectric with a plurality of oxygen ions wherein the oxygen ions fill at least a portion of the oxygen vacancies in the dielectric; and depositing a second metal electrode over the dielectric.
Claim 24
Independent Claim
85 words
A method of reducing oxygen vacancies in a metal-insulator-metal structure comprising: depositing a first metal electrode over a substrate; depositing a dielectric over the first metal electrode, the dielectric having a plurality of oxygen vacancies therein; applying an electromagnetic field that causes the oxygen vacancies in the dielectric to migrate; plasma treating the dielectric with a plurality of oxygen ions wherein the oxygen ions fill at least a portion of the oxygen vacancies in the dielectric; and depositing a second metal electrode over the dielectric.
Claim 25
Dependent Claim
20 words
The method of claim 20 wherein the act of plasma treating the dielectric does not degrade the first metal electrode.
Claim 26
Dependent Claim
28 words
The method of claim 20 wherein the act of depositing the first metal electrode deposits the first metal electrode over at least a portion of a poly plug.
Claim 27
Dependent Claim
20 words
The method of claim 22 wherein the act of plasma treating the dielectric does not substantially oxidize the poly plug.
Claim 28
Dependent Claim
23 words
The method of claim 22 further comprising the act of depositing a barrier layer between the first metal electrode and the poly plug.
Claim 29
Dependent Claim
20 words
The method of claim 24 wherein the act of plasma treating the dielectric does not substantially oxidize the barrier layer.
Claim 30
Dependent Claim
15 words
The method of claim 20 wherein the act of plasma treating occurs below 500° C.
Claim 31
Dependent Claim
21 words
The method of claim 20 wherein the act of applying an electromagnetic field applies is an electrical current to the dielectric.
Claim 32
Dependent Claim
20 words
The method of claim 20 wherein the act of applying an electromagnetic field applies an electrical voltage to the dielectric.
Claim 33
Independent Claim
107 words
A method of reducing oxygen vacancies in a dielectric on a semiconductor, the method comprising: depositing on a semiconductor substrate, a high constant dielectric, the high constant dielectric having a plurality of oxygen vacancies therein; applying an electromagnetic field to the dielectric wherein the electromagnetic field causes the oxygen vacancies in the high constant dielectric to migrate towards the surface of the high constant dielectric; and applying an electrolytic solution to the high constant dielectric wherein the electrolytic solution comprises at least a portion of oxygen ions that react with the oxygen vacancies to thereby fill a portion of the oxygen vacancies from the high constant dielectric.
Claim 34
Independent Claim
107 words
A method of reducing oxygen vacancies in a dielectric on a semiconductor, the method comprising: depositing on a semiconductor substrate, a high constant dielectric, the high constant dielectric having a plurality of oxygen vacancies therein; applying an electromagnetic field to the dielectric wherein the electromagnetic field causes the oxygen vacancies in the high constant dielectric to migrate towards the surface of the high constant dielectric; and applying an electrolytic solution to the high constant dielectric wherein the electrolytic solution comprises at least a portion of oxygen ions that react with the oxygen vacancies to thereby fill a portion of the oxygen vacancies from the high constant dielectric.
Claim 35
Dependent Claim
22 words
The method of claim 29 wherein the electromagnetic field causes the oxygen vacancies to migrate to an exposed surface of the dielectric.
Claim 36
Dependent Claim
19 words
The method of claim 29 wherein the act of applying the electromagnetic field applies a voltage to the dielectric.
Claim 37
Dependent Claim
22 words
The method of claim 29 wherein the act of applying an electrolytic solution occurs between approximately 300° C. to approximately 500° C.
Claim 38
Dependent Claim
22 words
The method of claim 29 wherein the act of applying the electrolytic solution occurs between approximately 20° C. to approximately 100° C.
Claim 39
Independent Claim
60 words
A method of reducing oxygen vacancies in a dielectric comprising: applying an electromagnetic field to a dielectric to cause oxygen vacancies in the dielectric to migrate towards the surface of the dielectric; and applying an electrolytic solution to the dielectric wherein oxygen ions in the electrolytic solution react with at least a portion of the oxygen vacancies in the dielectric.
Claim 40
Independent Claim
60 words
A method of reducing oxygen vacancies in a dielectric comprising: applying an electromagnetic field to a dielectric to cause oxygen vacancies in the dielectric to migrate towards the surface of the dielectric; and applying an electrolytic solution to the dielectric wherein oxygen ions in the electrolytic solution react with at least a portion of the oxygen vacancies in the dielectric.
Claim 41
Dependent Claim
20 words
The method of claim 34 wherein the act of applying an electromagnetic field applies an electrical current to the dielectric.
Claim 42
Dependent Claim
20 words
The method of claim 34 wherein the act of applying an electromagnetic field applies an electrical voltage to the dielectric.
Claim 43
Dependent Claim
20 words
The method of claim 34 wherein the act of applying an electromagnetic filed applies a magnetic field to the dielectric.
Claim 44
Dependent Claim
21 words
The method of claim 34 wherein the act of applying an electromagnetic field applies a substantially uniform field across the dielectric.
Claim 45
Dependent Claim
21 words
The method of claim 34 wherein the act of applying an electrolytic solution occurs between approximately 20° C. and 100° C.
Claim 46
Dependent Claim
22 words
The method of claim 34 wherein the act of applying an electrolytic solution occurs between approximately 20° C. and approximately 100° C.
Claim 47
Independent Claim
77 words
A method of reducing oxygen vacancies in a memory cell comprising: depositing a first electrode over a portion of a semiconductor transistor structure; depositing a dielectric over the first electrode, the dielectric having a plurality of oxygen vacancies therein; applying an electromagnetic field that causes the oxygen vacancies in the dielectric to migrate; subjecting the dielectric to electrolysis wherein oxygen ions react with the oxygen vacancies in the dielectric; and depositing a second electrode over the dielectric.
Claim 48
Independent Claim
77 words
A method of reducing oxygen vacancies in a memory cell comprising: depositing a first electrode over a portion of a semiconductor transistor structure; depositing a dielectric over the first electrode, the dielectric having a plurality of oxygen vacancies therein; applying an electromagnetic field that causes the oxygen vacancies in the dielectric to migrate; subjecting the dielectric to electrolysis wherein oxygen ions react with the oxygen vacancies in the dielectric; and depositing a second electrode over the dielectric.
Claim 49
Dependent Claim
29 words
The method of claim 41 wherein the act of applying an electromagnetic field applies current bias in the range of voltage of approximately 250 to 2,000 kilovolts per centimeter.
Claim 50
Dependent Claim
14 words
The method of claim 41 wherein the semiconductor transistor structure comprises a poly plug.
Claim 51
Dependent Claim
22 words
The method of claim 41 further comprising the act of depositing a barrier layer between the first electrode and the poly plug.
Claim 52
Dependent Claim
24 words
The method of claim 41 wherein the act of subjecting the dielectric to electrolysis does not oxidize a poly plug in the transistor structure.
Claim 53
Independent Claim
80 words
A method of reducing oxygen vacancies in a metal-insulator-metal structure comprising: depositing a first metal electrode over a substrate; depositing a dielectric over the first metal electrode, the dielectric having a plurality of oxygen vacancies therein; applying an electromagnetic field that causes the oxygen vacancies in the dielectric to migrate; subjecting the dielectric to electrolysis wherein oxygen ions react with at least a portion of the oxygen vacancies in the dielectric; and depositing a second metal electrode over the dielectric.
Claim 54
Independent Claim
80 words
A method of reducing oxygen vacancies in a metal-insulator-metal structure comprising: depositing a first metal electrode over a substrate; depositing a dielectric over the first metal electrode, the dielectric having a plurality of oxygen vacancies therein; applying an electromagnetic field that causes the oxygen vacancies in the dielectric to migrate; subjecting the dielectric to electrolysis wherein oxygen ions react with at least a portion of the oxygen vacancies in the dielectric; and depositing a second metal electrode over the dielectric.
Claim 55
Dependent Claim
22 words
The method of claim 46 wherein the act of subjecting the dielectric to electrolysis does not substantially oxidize the first metal electrode.
Claim 56
Dependent Claim
28 words
The method of claim 46 wherein the act of depositing the first metal electrode deposits the first metal electrode over at least a portion of a poly plug.
Claim 57
Dependent Claim
21 words
The method of claim 48 wherein the act of subjecting the dielectric to electrolysis does not substantially oxidize the poly plug.
Claim 58
Dependent Claim
23 words
The method of claim 48 further comprising the act of depositing a barrier layer between the first metal electrode and the poly plug.
Claim 59
Dependent Claim
21 words
The method of claim 50 wherein the act of subjecting the dielectric to electrolysis does not substantially oxidize the barrier layer.
Claim 60
Dependent Claim
18 words
The method of claim 46 wherein the subjecting the dielectric to electrolysis does not substantially oxidize the substrate.
Claim 61
Independent Claim
49 words
A method of reducing oxygen vacancies in a dielectric comprising: applying an electromagnetic field to a dielectric having oxygen vacancies therein; and applying an electrolytic solution to the dielectric wherein oxygen ions in the electrolytic solution react with at least a portion of the oxygen vacancies in the dielectric.
Claim 62
Independent Claim
49 words
A method of reducing oxygen vacancies in a dielectric comprising: applying an electromagnetic field to a dielectric having oxygen vacancies therein; and applying an electrolytic solution to the dielectric wherein oxygen ions in the electrolytic solution react with at least a portion of the oxygen vacancies in the dielectric.
Claim 63
Independent Claim
46 words
A method of reducing oxygen vacancies in a dielectric comprising: applying an electromagnetic field to a dielectric to cause oxygen vacancies in the dielectric to migrate; and applying oxygen ions to the surface of the dielectric wherein the oxygen ions react with the migrating oxygen vacancies.
Claim 64
Independent Claim
46 words
A method of reducing oxygen vacancies in a dielectric comprising: applying an electromagnetic field to a dielectric to cause oxygen vacancies in the dielectric to migrate; and applying oxygen ions to the surface of the dielectric wherein the oxygen ions react with the migrating oxygen vacancies.
Claim 65
Independent Claim
36 words
A method of reducing oxygen vacancies comprising: applying an electromagnetic field that causes the oxygen vacancies in a material to migrate; and reducing the amount of oxygen vacancies by subjecting the material to an oxidizing treatment.
Claim 66
Independent Claim
36 words
A method of reducing oxygen vacancies comprising: applying an electromagnetic field that causes the oxygen vacancies in a material to migrate; and reducing the amount of oxygen vacancies by subjecting the material to an oxidizing treatment.
Claim 67
Dependent Claim
11 words
The method of claim 55 wherein the material is a dielectric.
Claim 68
Dependent Claim
21 words
The method of claim 55 wherein the electromagnetic field causes the oxygen vacancies to migrate to the surface of the material.
Claim 69
Dependent Claim
13 words
The method of claim 55 wherein the electromagnetic field is an electrical bias.
Claim 70
Dependent Claim
18 words
The method of claim 55 wherein subjecting the material to an oxidizing treatment comprises plasma treating the material.
Claim 71
Dependent Claim
15 words
The method of claim 59 wherein the plasma treating applies oxygen ions to the material.
Claim 72
Dependent Claim
20 words
The method of claim 55 wherein subjecting the material to an oxidizing treatment applies an electrolytic solution to the material.
Claim 73
Dependent Claim
18 words
The method of claim 61 wherein the electrolytic solution applies a plurality of oxygen ions to the material.
References Cited (Backward Citations)
US5485294A
Cited
US5236573A
Cited
US5187638A
Cited
US5335138A
Cited
US5814852A
Cited
US5837593A
Cited
US5859760A
Cited
US5907470A
Cited
US5889647A
Cited
US5994183A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2004-08-27 | 2005-02-26 | 2005-08-28 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2008-08-27 | 2009-02-26 | 2009-08-28 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2012-08-27 | 2013-02-26 | 2013-08-28 | $7700.00 | Window Closed / Lapsed |