US5496597A
Expired / Lapsed
US
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Method for preparing a multilayer structure for electroluminescent components
Assignee: Beneq Oy
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Filing: 1994-07-20
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Granted: 1996-03-05
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Expires: 2014-07-20
Abstract
Abstract The present publication discloses a method for fabricating a multilayer alkaline-earth sulfide-metal oxide structure particularly suited for use in electroluminescent components. According to the method, a multilayer structure comprising at least one phosphor layer and at least one dielectric layer is formed onto a suitable substrate. The phosphor layer comprises at least one alkaline-earth sulfide and the dielectric layer at least one metal oxide. At least one of the dielectric layers is deposited by means of surface reactions directly onto the alkaline-earth sulfide layer(s). The invention is based on depositing the metal oxide dielectric layer by using as the precursor a organometal complex not involving compounds which could react in a deleterious manner with the alkaline-earth sulfide layer. This approach results in an EL component structure of longer life than those of the prior art.
Inventors
- 👤 Erkki Soininen
- 👤 Marja Leppa/ nen
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-07 02:34
CPC Classifications
H; H05; H05B; H05B33/00; H05B33/12; H05B33/14; H05B33/145; H05B33/22
Claims Analysis
Total Claims: 26
Claim 1
Independent Claim
139 words
A method for preparing a planar multilayer structure, said method comprising depositing said multilayer structure comprising at least one phosphor layer and at least one dielectric layer onto a suitable substrate, said phosphor layer comprising at least one alkaline-earth metal sulfide and said dielectric layer comprising at least one metal oxide species, and depositing at least one of the dielectric layers by means of surface reactions directly onto said alkaline-earth sulfide layer, wherein the dielectric layer deposited onto said alkaline-earth sulfide layer is at least partially deposited from a precursor of vaporizable organometal complex containing at least one metal atom and at least one organic ligand bonded to said at least one metal atom via an oxygen atom, whereby an electroluminescent structure is achieved exhibiting a luminance better than 80% of an initial luminance value after 800 operating hours.
Claim 2
Independent Claim
139 words
A method for preparing a planar multilayer structure, said method comprising depositing said multilayer structure comprising at least one phosphor layer and at least one dielectric layer onto a suitable substrate, said phosphor layer comprising at least one alkaline-earth metal sulfide and said dielectric layer comprising at least one metal oxide species, and depositing at least one of the dielectric layers by means of surface reactions directly onto said alkaline-earth sulfide layer, wherein the dielectric layer deposited onto said alkaline-earth sulfide layer is at least partially deposited from a precursor of vaporizable organometal complex containing at least one metal atom and at least one organic ligand bonded to said at least one metal atom via an oxygen atom, whereby an electroluminescent structure is achieved exhibiting a luminance better than 80% of an initial luminance value after 800 operating hours.
Claim 3
Dependent Claim
83 words
The method according to claim 1, wherein the dielectric layer is deposited onto the alkaline-earth sulfide layer from gas phase and the precursor for the metal oxide of the dielectric layer is an organometal complex having a composition of the general formula ML n , where M is at least one metal of the metal oxide in the dielectric layer, L is an organic ligand bonded to the metal via an oxygen atom, and n is the coordination number 1-5 of the metal.
Claim 4
Dependent Claim
83 words
The method according to claim 1, in which method the dielectric layer is deposited onto the alkaline-earth sulfide layer from a gas phase, wherein the precursor for the metal oxide of the dielectric layer is a vaporizable organometal complex having a composition of the general formula M(OR) n , where M is at least one metal of the metal oxide in the dielectric layer, and n is the coordination number 1-5 of the metal, and R is an alkyl group of 1-10 carbons.
Claim 5
Dependent Claim
80 words
The method according to claim 1 in which method the dielectric layer is deposited onto the alkaline-earth sulfide layer from gas phase, wherein the precursor for the metal oxide of the dielectric layer is a vaporizable organometal complex precursor having a composition of the general formula ML n , where M is at least one metal of the metal oxide in the dielectric layer, and n is the coordination number 1-5 of the metal, and L is a β-diketonate residue.
Claim 6
Dependent Claim
55 words
The method according to claim 2, wherein the precursor used is an organometal complex having the composition of the general formula M(C 5 H 7 O 2 ) n , where M is at least one metal of the metal oxide in the dielectric layer, and n is the coordination number 1-5 of the metal.
Claim 7
Dependent Claim
55 words
The method according to claim 2, wherein the precursor used is an organometal complex having the composition of the general formula M(thd) n , where M is at least one metal of the metal oxide in the dielectric layer, and n is the coordination number 1-5 of the metal, and thd is a 2,2,6,6-tetramethyl-3,5-heptanedionate residue.
Claim 8
Dependent Claim
28 words
The method according to claim 1, wherein the dielectric layer is deposited at least partially using as the precursor an organometal complex containing at least two metal cations.
Claim 9
Dependent Claim
41 words
The method according to claim 1, wherein an organometal complex is used in which the metal M is Al, Ti, Y, Sm Si, Ta, Pb, Ba, Nb, Sr, Zr, Mn, Hf, La, Pr, Mg, Zn, Te, Sn, Th, W or Bi.
Claim 10
Dependent Claim
33 words
The method according to claim 1, wherein the dielectric layer is deposited at least partially from a precursor of an organometal complex by separating the metal oxide therefrom by means of an oxidant.
Claim 11
Dependent Claim
20 words
The method according to claim 9, wherein the oxidant used is water, hydrogen peroxide, alcohol, oxygen, ozone or nitrous oxide.
Claim 12
Dependent Claim
35 words
The method according to claim 1, wherein the dielectric layer is deposited at least partially from a precursor of an organometal complex by separating the metal oxide therefrom by means of thermal or light-induced decomposition.
Claim 13
Dependent Claim
32 words
The method according to claim 1, comprising preparing first a prefabricated substrate comprising a base substrate supporting the phosphor layer deposited thereon, and further depositing the multilayer structure on the prefabricated substrate.
Claim 14
Dependent Claim
40 words
The method according to claim 1, comprising preparing first a prefabricated substrate comprising a base substrate supporting the phosphor layer deposited thereon, and a metal oxide dielectric layer deposited thereon and further depositing the multilayer structure on the prefabricated substrate.
Claim 15
Dependent Claim
41 words
The method according to claim 1, comprising preparing first a prefabricated substrate comprising a base substrate supporting the multilayer structure comprising alternate phosphor layers and metal oxide dielectric layers deposited thereon, and further depositing on the prefabricated substrate the multilayer structure.
Claim 16
Dependent Claim
34 words
The method according to claim 1, wherein the at least one phosphor layer is deposited onto the dielectric layer last deposited, followed by a further deposition of a dielectric layer onto said phosphor layer(s).
Claim 17
Dependent Claim
21 words
The method according to claim 15, wherein a plurality of superimposed phosphor-dielectric layers are deposited onto the dielectric layer last deposited.
Claim 18
Dependent Claim
26 words
The method according to claim 1, comprising preparing the at least one phosphor layer containing a metal sulfide different from that/those of the other phosphor layers.
Claim 19
Dependent Claim
16 words
The method according to claim 17, comprising preparing the at least one phosphor layer containing ZnS.
Claim 20
Dependent Claim
16 words
The method according to claim 17, comprising preparing the at least one phosphor layer containing SrS.
Claim 21
Dependent Claim
26 words
The method according to claim 12, wherein two adjacent phosphor layers isolated by a metal oxide dielectric layer contain a sulfide of the same alkaline-earth metal.
Claim 22
Dependent Claim
30 words
The method according to claim 1, wherein the phosphor layer is doped with a suitable metal such as manganese, cerium, europium, terbium, thulium, praseodymium, samarium, erbium, tin, copper or lead.
Claim 23
Dependent Claim
20 words
The method according to claim 1, comprising preparing a phosphor layer containing a sulfide of Ca, Mg, Sr and/or Ba.
Claim 24
Dependent Claim
32 words
The method according to claim 1, comprising preparing at least the following layers in the mentioned order: a manganese-doped zinc sulfide layer, a cerium-doped strontium sulfide layer and a metal oxide layer.
Claim 25
Dependent Claim
37 words
The method according to claim 1, comprising preparing at least the following layers in the mentioned order: a manganese-doped zinc sulfide layer, a cerium-doped strontium sulfide layer, a metal oxide layer and a cerium-doped strontium sulfide layer.
Claim 26
Dependent Claim
32 words
The method according to claim 1, comprising preparing at least the following layers in the mentioned order: a cerium-doped strontium sulfide layer, a metal oxide layer and a manganese-doped zinc sulfide layer.
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