US5266355A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Chemical vapor deposition of metal oxide films
Assignee: Eastman Kodak Co
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Filing: 1992-11-03
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Granted: 1993-11-30
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Expires: 2012-11-03
Abstract
Abstract Thin, uniform films of complex metal oxides are deposited by chemical vapor deposition onto a substrate by vaporizing a single source precursor containing metal M' ions and metal M" ions, where metal M' is Li, Na, K, Ba, Mg, Ca, Sr, or Pb, and metal M" is V, Nb, Ta, or Ti, and contacting the vapor with the substrate at a temperature sufficiently high to decompose the precursor and form an M'M" metal oxide.
Inventors
- 👤 Alex A. Wernberg
- 👤 Henry J. Gysling
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-27 23:17
CPC Classifications
C; C23; C23C; C23C16/00; C23C16/22; C23C16/30; C23C16/40; C23C16/409; C30; C30B; C30B25/00; C30B25/02; C30B29/00; C30B29/10; C30B29/16; C30B29/22; C30B29/30
Claims Analysis
Total Claims: 5
Claim 1
Independent Claim
120 words
A method for depositing a complex metal oxide film on a substrate, which comprises: vaporizing a liquid single source precursor solution comprising a solution of a single organometallic compound having the general formula M'M" (OR).sub.n (OR').sub.6-n wherein one of either M' or M" is Li, Na, K, Mg, Ca, Sr, Ba, or Pb, and the other of either M' or M" is V, Nb, Ta, Ti, Zr, or Hf, R and R' are alkyl or aryl, and n is from 0 to 6; and contacting said substrate with the vapor of said single source precursor prior to substantial disporportionation of said precursor at a temperature sufficient to deposit a complex metal oxide film containing M' and M" on said substrate.
Claim 2
Independent Claim
120 words
A method for depositing a complex metal oxide film on a substrate, which comprises: vaporizing a liquid single source precursor solution comprising a solution of a single organometallic compound having the general formula M'M" (OR).sub.n (OR').sub.6-n wherein one of either M' or M" is Li, Na, K, Mg, Ca, Sr, Ba, or Pb, and the other of either M' or M" is V, Nb, Ta, Ti, Zr, or Hf, R and R' are alkyl or aryl, and n is from 0 to 6; and contacting said substrate with the vapor of said single source precursor prior to substantial disporportionation of said precursor at a temperature sufficient to deposit a complex metal oxide film containing M' and M" on said substrate.
Claim 3
Dependent Claim
18 words
A method according to claim 1, wherein said alkyl groups are ethyl, methyl, n-propyl, i-propyl, n-butyl, or t-butyl.
Claim 4
Independent Claim
127 words
A method for depositing a complex metal oxide film on a substrate, which comprises: vaporizing a single source precursor comprising a single organometallic compound having the general formula: M'M" (OR).sub.n (OR').sub.6-n wherein one of either M' or M" is Li, Na, K, Mg, Ca, Sr, Ba, or Pb, and the other of either M' or M" is V, Nb, Ta, Ti, Zr, or Hf, R and R' are alkyl or aryl, and n is from 0 to 6; and vaporizing said single source precursor by direct heating of said precursor; and contacting said substrate with the vapor of said single source precursor prior to substantial disproportionation of said precursor at a temperature sufficient to deposit a complex metal oxide film containing M' and M" on said substrate.
Claim 5
Independent Claim
127 words
A method for depositing a complex metal oxide film on a substrate, which comprises: vaporizing a single source precursor comprising a single organometallic compound having the general formula: M'M" (OR).sub.n (OR').sub.6-n wherein one of either M' or M" is Li, Na, K, Mg, Ca, Sr, Ba, or Pb, and the other of either M' or M" is V, Nb, Ta, Ti, Zr, or Hf, R and R' are alkyl or aryl, and n is from 0 to 6; and vaporizing said single source precursor by direct heating of said precursor; and contacting said substrate with the vapor of said single source precursor prior to substantial disproportionation of said precursor at a temperature sufficient to deposit a complex metal oxide film containing M' and M" on said substrate.
References Cited (Backward Citations)
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| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 1996-11-29 | 1997-05-31 | 1997-11-30 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2000-11-29 | 2001-05-31 | 2001-11-30 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2004-11-29 | 2005-05-31 | 2005-11-30 | $7700.00 | Window Closed / Lapsed |