US6451641B1
Expired / Lapsed
US
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Non-reducing process for deposition of polysilicon gate electrode over high-K gate dielectric material
Assignee: GlobalFoundries US Inc
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Filing: 2002-02-27
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Granted: 2002-09-17
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Expires: 2022-02-27
Abstract
Abstract A process for fabricating a semiconductor device, including providing a semiconductor substrate; depositing on the semiconductor substrate a layer of a high-K gate dielectric material; depositing on the gate dielectric material layer a polysilicon or polysilicon-germanium gate electrode layer, in which the step of depositing the polysilicon or polysilicon-germanium gate electrode layer includes providing non-reducing conditions in a CVD apparatus.
Inventors
- 👤 Arvind Halliyal
- 👤 Robert Bertram Ogle, Jr.
- 👤 Joong S. Jeon
- 👤 Fred Cheung
- 👤 Effiong Ibok
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 01:16
CPC Classifications
H; H10; H10D; H10D64/00; H10D64/01; H10D64/013; H10D64/01302; H10D64/01332; H10D64/01336; H10D64/0134; H10D64/01304; H10D64/01314; H10D64/01342; H10D64/60; H10D64/66; H10D64/68; H10D64/691
Claims Analysis
Total Claims: 23
Claim 1
Independent Claim
69 words
A process for fabricating a semiconductor device, comprising: providing a semiconductor substrate; depositing on the semiconductor substrate a layer comprising a high-K gate dielectric material; depositing on the layer comprising a high-K gate dielectric material layer a polysilicon or a polysilicon-germanium gate electrode layer in a CVD apparatus, wherein the step of depositing a polysilicon or a polysilicon-germanium gate electrode layer includes providing non-reducing conditions in the CVD apparatus.
Claim 2
Dependent Claim
69 words
A process for fabricating a semiconductor device, comprising: providing a semiconductor substrate; depositing on the semiconductor substrate a layer comprising a high-K gate dielectric material; depositing on the layer comprising a high-K gate dielectric material layer a polysilicon or a polysilicon-germanium gate electrode layer in a CVD apparatus, wherein the step of depositing a polysilicon or a polysilicon-germanium gate electrode layer includes providing non-reducing conditions in the CVD apparatus.
Claim 3
Dependent Claim
87 words
The process of claim 1 , wherein the high-K gate dielectric material comprises at least one of ZrO 2 , HfO 2 , Al 2 O 3 , Y 2 O 3 , La 2 O 3 , silicates of one or more of ZrO 2 , HfO 2 , Al 2 O 3 , Y 2 O 3 , La 2 O 3 or aluminates of one or more of ZrO 2 , HfO 2 , Y 2 O 3 , La 2 O 3 .
Claim 4
Dependent Claim
21 words
The process of claim 1 , wherein the non-reducing conditions comprise providing a hydrogen-free source of silicon to the CVD apparatus.
Claim 5
Dependent Claim
44 words
The process of claim 3 , wherein the hydrogen-free source of silicon comprises a compound having the general formula Si x Cl y F z , wherein x=1 or 2, and both y and z are integers from 0 to 6, such that y+z=2x+2.
Claim 6
Dependent Claim
21 words
The process of claim 1 , wherein the non-reducing conditions comprise providing a hydrogen-free source of germanium to the CVD apparatus.
Claim 7
Dependent Claim
44 words
The process of claim 5 , wherein the hydrogen-free source of germanium comprises a compound having the general formula Ge x Cl y F z , wherein x=1 or 2, and both y and z are integers from 0 to 6, such that y+z=2x+2.
Claim 8
Dependent Claim
66 words
The process of claim 1 , wherein the non-reducing conditions comprise providing a reduced-hydrogen source of silicon to the CVD apparatus, in which the source of silicon comprises a compound having the general formula Si x Cl y F z H a , wherein x=1 or 2, a is an integer ≦2x, and both y and z are integers from 0 to 6, such that y+z+a=2x+2.
Claim 9
Dependent Claim
17 words
The process of claim 7 , further comprising providing a controlled oxidizing atmosphere to the CVD apparatus.
Claim 10
Dependent Claim
66 words
The process of claim 1 , wherein the non-reducing conditions comprise providing a reduced-hydrogen source of germanium to the CVD apparatus, in which the source of germanium comprises a compound having the general formula Ge x Cl y F z H a , wherein x=1 or 2, a is an integer ≦2x, and both y and z are integers from 0 to 6, such that y+z+a=2x+2.
Claim 11
Dependent Claim
17 words
The process of claim 9 , further comprising providing a controlled oxidizing atmosphere to the CVD apparatus.
Claim 12
Dependent Claim
32 words
The process of claim 10 , wherein providing a controlled oxidizing atmosphere comprises providing oxygen, nitrous oxide, nitric oxide, chlorine or mixtures thereof, or mixtures thereof with nitrogen, to the CVD apparatus.
Claim 13
Dependent Claim
20 words
The process of claim 1 , wherein the non-reducing conditions comprise providing a controlled oxidizing atmosphere to the CVD apparatus.
Claim 14
Dependent Claim
37 words
The process of claim 1 , wherein the non-reducing conditions comprise excluding hydrogen from the CVD apparatus, providing a reduced amount of hydrogen to the CVD apparatus, and/or using nitrogen as carrier gas in the CVD apparatus.
Claim 15
Dependent Claim
25 words
The process of claim 1 , wherein the step of depositing a polysilicon or polysilicon-germanium layer is carried out by LPCVD, RTCVD, MOCVD or ALCVD.
Claim 16
Dependent Claim
64 words
A process for fabricating a semiconductor device, comprising: providing a semiconductor substrate; depositing on the semiconductor substrate a layer comprising a high-K gate dielectric material; depositing on the layer comprising a high-K dielectric material a polysilicon or polysilicon-germanium gate electrode layer in a CVD apparatus by providing a hydrogen-free source of silicon or hydrogen-free sources of both silicon and germanium to the CVD apparatus.
Claim 17
Dependent Claim
64 words
A process for fabricating a semiconductor device, comprising: providing a semiconductor substrate; depositing on the semiconductor substrate a layer comprising a high-K gate dielectric material; depositing on the layer comprising a high-K dielectric material a polysilicon or polysilicon-germanium gate electrode layer in a CVD apparatus by providing a hydrogen-free source of silicon or hydrogen-free sources of both silicon and germanium to the CVD apparatus.
Claim 18
Dependent Claim
44 words
The process of claim 15 , wherein the hydrogen-free source of silicon comprises a compound having the general formula Si x Cl y F z , wherein x=1 or 2, and both y and z are integers from 0 to 6, such that y+z=2x+2.
Claim 19
Dependent Claim
44 words
The process of claim 15 , wherein the hydrogen-free source of germanium comprises a compound having the general formula Ge x Cl y F z , wherein x=1 or 2, and both y and z are integers from 0 to 6, such that y+z=2x+2.
Claim 20
Dependent Claim
17 words
The process of claim 15 , further comprising providing a controlled oxidizing atmosphere to the CVD apparatus.
Claim 21
Dependent Claim
70 words
A process for fabricating a semiconductor device, comprising: providing a semiconductor substrate; depositing on the semiconductor substrate a layer comprising a high-K gate dielectric material; depositing on the layer comprising a high-K dielectric material a polysilicon or polysilicon-germanium gate electrode layer in a non-plasma CVD apparatus by providing a hydrogen-free source of silicon or hydrogen-free sources of both silicon and germanium and an oxidizing gas to the non-plasma CVD apparatus.
Claim 22
Dependent Claim
70 words
A process for fabricating a semiconductor device, comprising: providing a semiconductor substrate; depositing on the semiconductor substrate a layer comprising a high-K gate dielectric material; depositing on the layer comprising a high-K dielectric material a polysilicon or polysilicon-germanium gate electrode layer in a non-plasma CVD apparatus by providing a hydrogen-free source of silicon or hydrogen-free sources of both silicon and germanium and an oxidizing gas to the non-plasma CVD apparatus.
Claim 23
Dependent Claim
25 words
The process of claim 19 , wherein the polysilicon or polysilicon-germanium gate electrode layer is deposited without chemical reduction of the high-K gate dielectric material.
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| 3.5 Years (Year 4) | 2005-09-16 | 2006-03-18 | 2006-09-17 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2009-09-16 | 2010-03-18 | 2010-09-17 | $3760.00 | Window Closed / Lapsed |
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