US6645882B1
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Preparation of composite high-K/standard-K dielectrics for semiconductor devices
Assignee: GlobalFoundries US Inc
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Filing: 2002-01-17
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Granted: 2003-11-11
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Expires: 2022-01-17
Abstract
Abstract A semiconductor device and a method of fabricating the semiconductor device having a composite dielectric layer including steps of providing a semiconductor substrate; depositing on the semiconductor substrate alternating sub-layers of a first dielectric material and a second dielectric material to form a layered dielectric structure having at least two sub-layers of at least one of the first dielectric material and the second dielectric material, in which one of the first dielectric material and the second dielectric material is a high-K dielectric material and an other of the first dielectric material and the second dielectric material is a standard-K dielectric material comprising aluminum oxide; and annealing the layered dielectric structure at an elevated temperature to form a composite dielectric layer.
Inventors
- 👤 Arvind Halliyal
- 👤 Joong S. Jeon
- 👤 Minh Van Ngo
- 👤 Robert B. Ogle
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 01:25
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/60; H10P14/63; H10P14/6302; H10P14/6322; H10D; H10D64/00; H10D64/01; H10D64/013; H10D64/01302; H10D64/01332; H10D64/01336; H10D64/0134; H10D64/01342; H10D64/01346; H10D64/60; H10D64/66; H10D64/68; H10D64/681; H10D64/685; H10D64/691; H10D64/693; H10P14/69; H10P14/692; H10P14/6921; H10P14/6928; H10P14/6929; H10P14/6938; H10P14/6939; H10P14/69397; H10D64/01344; H10P14/66; H10P14/662; H10P14/69391
Claims Analysis
Total Claims: 23
Claim 1
Independent Claim
113 words
A method of fabricating a semiconductor device having a composite dielectric layer, comprising: providing a semiconductor substrate; depositing on the semiconductor substrate alternating sub-layers comprising a first dielectric material and a second dielectric material to form a layered dielectric structure having at least two sub-layers of at least one of the first dielectric material and the second dielectric material, wherein one of the first dielectric material and the second dielectric material is a high-K dielectric material and an other of the first dielectric material and the second dielectric material is a standard-K dielectric material comprising aluminum oxide; and annealing the layered dielectric structure at an elevated temperature to form a composite dielectric layer.
Claim 2
Independent Claim
113 words
A method of fabricating a semiconductor device having a composite dielectric layer, comprising: providing a semiconductor substrate; depositing on the semiconductor substrate alternating sub-layers comprising a first dielectric material and a second dielectric material to form a layered dielectric structure having at least two sub-layers of at least one of the first dielectric material and the second dielectric material, wherein one of the first dielectric material and the second dielectric material is a high-K dielectric material and an other of the first dielectric material and the second dielectric material is a standard-K dielectric material comprising aluminum oxide; and annealing the layered dielectric structure at an elevated temperature to form a composite dielectric layer.
Claim 3
Dependent Claim
27 words
The method of claim 1 , wherein the standard-K dielectric material further comprises at least one of silicon dioxide, silicon oxynitride, silicon nitride, and silicon-rich silicon nitride.
Claim 4
Dependent Claim
31 words
The method of claim 2 , wherein during the step of annealing, the first dielectric material and the second dielectric material form an aluminum-containing reaction product in the composite dielectric layer.
Claim 5
Dependent Claim
16 words
The method of claim 2 , wherein the composite dielectric layer further comprises a mixed aluminate/silicate.
Claim 6
Dependent Claim
23 words
The method of claim 3 , wherein the reaction product comprises a high-K derived metal atom, an aluminum atom and an oxygen atom.
Claim 7
Dependent Claim
142 words
The method of claim 1 , wherein the high-K dielectric material comprises at least one of hafnium oxide (HfO 2 ), zirconium oxide (ZrO 2 ), tantalum oxide (Ta 2 O 5 ), barium titanate (BaTiO 3 ), titanium dioxide (TiO 2 ), cerium oxide (CeO 2 ), lanthanum oxide (La 2 O 3 ), lanthanum aluminum oxide (LaAl 3 ), lead titanate (PbTiO 3 ), strontium titanate (SrTiO 3 ), lead zirconate (PbZrO 3 ), tungsten oxide (WO 3 ), yttrium oxide (Y 2 O 3 ), bismuth silicon oxide (Bi 4 Si 2 O 12 ), barium strontium titanate (BST) (Ba 1−x Sr x TiO 3 ), PMN (PbMg x Nb 1−x O 3 ), PZT (PbZr x Ti 1−x O 3 ), PZN (PbZn x Nb 1−x O 3 ), and PST (PbSc x Ta 1−x O 3 ).
Claim 8
Dependent Claim
16 words
The method of claim 1 , wherein the first dielectric material is the high-K dielectric material.
Claim 9
Dependent Claim
16 words
The method of claim 1 , wherein the second dielectric material is the high-K dielectric material.
Claim 10
Dependent Claim
47 words
The method of claim 1 , wherein the composite dielectric layer comprises at least a portion of the sub-layers of the first dielectric material and the second dielectric material, separated by a sub-layer of a reaction product of the first dielectric material and the second dielectric material.
Claim 11
Dependent Claim
30 words
The method of claim 1 , wherein the composite dielectric layer comprises a substantially uniform layer of a reaction product of the first dielectric material and the second dielectric material.
Claim 12
Dependent Claim
31 words
The method of claim 1 , wherein thicknesses of the sub-layers is selected to provide a selected ratio of high-K derived metal to aluminum to oxygen in the composite dielectric layer.
Claim 13
Independent Claim
142 words
A method of fabricating a semiconductor device having a composite dielectric layer, comprising: providing a semiconductor substrate; depositing on the semiconductor substrate alternating sub-layers comprising a first dielectric material and a second dielectric material to form a layered dielectric structure having at least two sub-layers of at least one of the first dielectric material and the second dielectric material, wherein one of the first dielectric material and the second dielectric material is a high-K dielectric material and an other of the first dielectric material and the second dielectric material is a standard-K dielectric material comprising aluminum oxide and at least one of silicon dioxide, silicon oxynitride, silicon nitride, and silicon-rich silicon nitride; and annealing the layered dielectric structure at an elevated temperature to form a composite dielectric layer comprising a reaction product of the first dielectric material and the second dielectric material.
Claim 14
Independent Claim
142 words
A method of fabricating a semiconductor device having a composite dielectric layer, comprising: providing a semiconductor substrate; depositing on the semiconductor substrate alternating sub-layers comprising a first dielectric material and a second dielectric material to form a layered dielectric structure having at least two sub-layers of at least one of the first dielectric material and the second dielectric material, wherein one of the first dielectric material and the second dielectric material is a high-K dielectric material and an other of the first dielectric material and the second dielectric material is a standard-K dielectric material comprising aluminum oxide and at least one of silicon dioxide, silicon oxynitride, silicon nitride, and silicon-rich silicon nitride; and annealing the layered dielectric structure at an elevated temperature to form a composite dielectric layer comprising a reaction product of the first dielectric material and the second dielectric material.
Claim 15
Dependent Claim
26 words
The method of claim 12 , wherein the reaction product comprise a high-K derived metal atom, a silicon atom, an aluminum atom and an oxygen atom.
Claim 16
Dependent Claim
142 words
The method of claim 12 , wherein the high-K dielectric material comprises at least one of hafnium oxide HfO 2 ), zirconium oxide (ZrO 2 ), tantalum oxide (Ta 2 O 5 ), barium titanate (BaTiO 3 ), titanium dioxide (TiO 2 ), cerium oxide (CeO 2 ), lanthanum oxide (La 2 O 3 ), lanthanum aluminum oxide (LaAlO 3 ), lead titanate (PbTiO 3 ), strontium titanate (SrTiO 3 ), lead zirconate (PbZrO 3 ), tungsten oxide (WO 3 ), yttrium oxide (Y 2 O 3 ), bismuth silicon oxide (Bi 4 Si 2 O 12 ), barium strontium titanate (BST) (Ba 1−x Sr x TiO 3 ), PMN (PbMg x Nb 1−x O 3 ), PZT (PbZr x Ti 1−x O 3 ), PZN (PbZn x Nb 1−x O 3 ), and PST (PbSc x Ta 1−x O 3 ).
Claim 17
Dependent Claim
16 words
The method of claim 12 , wherein the first dielectric material is the high-K dielectric material.
Claim 18
Dependent Claim
16 words
The method of claim 12 , wherein the second dielectric material is the high-K dielectric material.
Claim 19
Dependent Claim
47 words
The method of claim 12 , wherein the composite dielectric layer comprises at least a portion of the sub-layers of the first dielectric material and the second dielectric material, separated by a sub-layer of a reaction product of the first dielectric material and the second dielectric material.
Claim 20
Dependent Claim
30 words
The method of claim 12 , wherein the composite dielectric layer comprises a substantially uniform layer of a reaction product of the first dielectric material and the second dielectric material.
Claim 21
Independent Claim
144 words
A method of fabricating a semiconductor device having a composite dielectric layer, comprising: providing a semiconductor substrate; depositing on the semiconductor substrate alternating sub-layers comprising a first dielectric material and a second dielectric material to form a layered dielectric structure having at least two sub-layers of at least one of the first dielectric material and the second dielectric material, wherein one of the first dielectric material and the second dielectric material is a high-K dielectric material and an other of the first dielectric material and the second dielectric material is a standard-K dielectric material comprising aluminum oxide; and annealing the layered dielectric structure at an elevated temperature to form a composite dielectric layer comprising a reaction product of the first dielectric material and the second dielectric material, wherein the reaction product comprises a high-K derived metal atom, an aluminum atom and an oxygen atom.
Claim 22
Independent Claim
144 words
A method of fabricating a semiconductor device having a composite dielectric layer, comprising: providing a semiconductor substrate; depositing on the semiconductor substrate alternating sub-layers comprising a first dielectric material and a second dielectric material to form a layered dielectric structure having at least two sub-layers of at least one of the first dielectric material and the second dielectric material, wherein one of the first dielectric material and the second dielectric material is a high-K dielectric material and an other of the first dielectric material and the second dielectric material is a standard-K dielectric material comprising aluminum oxide; and annealing the layered dielectric structure at an elevated temperature to form a composite dielectric layer comprising a reaction product of the first dielectric material and the second dielectric material, wherein the reaction product comprises a high-K derived metal atom, an aluminum atom and an oxygen atom.
Claim 23
Dependent Claim
36 words
The method of claim 19 , wherein the standard-K dielectric material further comprises at least one of silicon dioxide, silicon oxynitride, silicon nitride, and silicon-rich silicon nitride, and the reaction product further comprises a silicon atom.
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