Integrated plasma etch of gate and gate dielectric and low power plasma post gate etch removal of high-K residual

Claim 2

A process of fabricating a semiconductor device, comprising: providing a first semiconductor wafer; depositing on the first semiconductor wafer a layer comprising a high-K dielectric material layer; depositing on the layer comprising a high-K dielectric material a polysilicon or polysilicon-germanium layer; and forming a gate stack by plasma etching both a portion of the polysilicon or polysilicon-germanium layer and a portion of the layer comprising a high-K dielectric material, wherein the steps of plasma etching are carried out in a single chamber without moving the first wafer from the chamber and without opening the chamber, and wherein the step of plasma etching the polysilicon or polysilicon-germanium layer comprises providing a HBr/Cl 2 /HeO 2 chemistry to the chamber.

Claim 3

The process of claim 1 , wherein the step of plasma etching the high-K dielectric material layer comprises providing oxygen, a fluorine-containing material and an inert gas to the chamber.

Claim 4

The process of claim 2 , wherein the fluorine-containing material is CF 4 , C 2 F 6 , CHF 3 , C 2 HF 5 , CH 2 F 2 or mixtures thereof.

Claim 5

The process of claim 2 , wherein the inert gas is argon, krypton, xenon or a mixture thereof.

Claim 6

The process of claim 1 , wherein the step of plasma etching removes substantially all of the high-K dielectric material layer from the wafer except for a portion forming the gate dielectric.

Claim 7

The process of claim 1 , wherein following the step of plasma etching the process further comprises removing from the first wafer any unwanted residual high-K dielectric material present on the first wafer by applying a low power plasma treatment prior to transferring the first wafer to a subsequent apparatus which is used for processing both the first wafer and a second semiconductor wafer not containing a high-K dielectric material.

Claim 8

The process of claim 6 , wherein the low power plasma treatment removes any residual high-K dielectric material from internal surfaces of the chamber, thereby post-cleaning and conditioning the chamber.

Claim 9

The process of claim 6 , wherein the unwanted residual high-K dielectric material is present in microscopic or greater quantities.

Claim 10

A process of integrating a high-K dielectric material into a fabrication process for processing both a high-K-containing semiconductor wafer and a non-high-K-containing semiconductor wafer, comprising: depositing on a semiconductor wafer a layer comprising a high-K dielectric material to form a high-K-containing semiconductor wafer; depositing on the layer comprising a high-K dielectric material a polysilicon or polysilicon-germanium layer; plasma etching both a portion of the polysilicon or polysilicon-germanium layer and a portion of the high-K dielectric material layer in a single chamber without moving the first wafer from the chamber and without opening the chamber to form a gate stack comprising a gate and a gate dielectric; and applying a low power plasma treatment to the wafer and to the chamber prior to transferring the wafer to a subsequent apparatus in which a non-high-K-containing semiconductor wafer also is processed, wherein the step of plasma etching the polysilicon or polysilicon-germanium layer comprises providing a HBr/Cl 2 /HeO 2 chemistry to the chamber.

Claim 11

A process of integrating a high-K dielectric material into a fabrication process for processing both a high-K-containing semiconductor wafer and a non-high-K-containing semiconductor wafer, comprising: depositing on a semiconductor wafer a layer comprising a high-K dielectric material to form a high-K-containing semiconductor wafer; depositing on the layer comprising a high-K dielectric material a polysilicon or polysilicon-germanium layer; plasma etching both a portion of the polysilicon or polysilicon-germanium layer and a portion of the high-K dielectric material layer in a single chamber without moving the first wafer from the chamber and without opening the chamber to form a gate stack comprising a gate and a gate dielectric; and applying a low power plasma treatment to the wafer and to the chamber prior to transferring the wafer to a subsequent apparatus in which a non-high-K-containing semiconductor wafer also is processed, wherein the step of plasma etching the polysilicon or polysilicon-germanium layer comprises providing a HBr/Cl 2 /HeO 2 chemistry to the chamber.

Claim 12

The process of claim 9 , wherein the step of plasma etching the high-K dielectric material layer comprises providing oxygen, a fluorine-containing material and an inert gas to the chamber.

Claim 13

The process of claim 10 , wherein the fluorine-containing material is CF 4 , C 2 F 6 , CHF 3 , C 2 HF 5 , CH 2 F 2 or mixtures thereof.

Claim 14

The process of claim 10 , wherein the inert gas is argon, krypton, xenon or a mixture thereof.

Claim 15

The process of claim 9 , wherein the step of plasma etching removes substantially all of the high-K dielectric material layer from the wafer except for a portion forming the gate dielectric.

Claim 16

The process of claim 9 , wherein the unwanted residual high-K dielectric material is present in microscopic or greater quantities.

Claim 17

The process of claim 9 , further comprising a resist trim step prior to the step of plasma etching.

Claim 18

A process of fabricating a semiconductor device, comprising: providing a first semiconductor wafer; depositing on the first wafer a layer comprising a high-K dielectric material layer; depositing on the layer comprising a high-K dielectric material a polysilicon or polysilicon-germanium layer; plasma etching in a single chamber both a portion of the polysilicon or polysilicon-germanium layer and a portion of the layer comprising a high-K dielectric material to form a gate stack comprising a gate and a gate dielectric, wherein the steps of plasma etching are carried out without moving the first wafer from the chamber and without opening the chamber, and the step of plasma etching the high-K dielectric material layer comprises providing oxygen, a fluorine-containing material and an inert gas to the chamber; and removing from the first wafer any unwanted residual high-K dielectric material present on the first wafer by applying a low power plasma treatment in the chamber, wherein the step of plasma etching the polysilicon or polysilicon-germanium layer comprises providing Aa HBr/Cl 2 /HeO 2 chemistry to the chamber.

Claim 19

A process of fabricating a semiconductor device, comprising: providing a first semiconductor wafer; depositing on the first wafer a layer comprising a high-K dielectric material layer; depositing on the layer comprising a high-K dielectric material a polysilicon or polysilicon-germanium layer; plasma etching in a single chamber both a portion of the polysilicon or polysilicon-germanium layer and a portion of the layer comprising a high-K dielectric material to form a gate stack comprising a gate and a gate dielectric, wherein the steps of plasma etching are carried out without moving the first wafer from the chamber and without opening the chamber, and the step of plasma etching the high-K dielectric material layer comprises providing oxygen, a fluorine-containing material and an inert gas to the chamber; and removing from the first wafer any unwanted residual high-K dielectric material present on the first wafer by applying a low power plasma treatment in the chamber, wherein the step of plasma etching the polysilicon or polysilicon-germanium layer comprises providing Aa HBr/Cl 2 /HeO 2 chemistry to the chamber.

Claim 20

The process of claim 16 , further comprising transferring the first wafer to a subsequent apparatus which is used for processing both the first wafer and a second semiconductor wafer susceptible to contamination by a residual high-K dielectric material, wherein the subsequent apparatus remains substantially free of contamination by the residual high-K dielectric material.

Claim 21

The process of claim 16 , wherein substantially all of the high-K dielectric material layer is removed from the wafer except for a portion forming the gate dielectric.