US6586349B1
Expired / Lapsed
US
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Integrated process for fabrication of graded composite dielectric material layers for semiconductor devices
Assignee: Advanced Micro Devices Inc
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Filing: 2002-02-21
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Granted: 2003-07-01
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Expires: 2022-02-21
Abstract
Abstract The present invention relates to a method for fabricating a semiconductor device, and to a semiconductor device, the method including providing a semiconductor substrate; depositing on the semiconductor substrate a composite dielectric material layer including elements of at least two dielectric materials, in which the step of depositing includes providing a first precursor for a first dielectric material at a first rate and providing a second precursor for a second dielectric material at a second rate, in which at least a portion of the at least two dielectric materials are deposited simultaneously. The semiconductor device includes a composite dielectric material layer having a thickness, and including elements of a first dielectric material and a second dielectric material, in which the composite dielectric material layer includes a varying concentration ratio of the first dielectric material to the second dielectric material through the thickness.
Inventors
- 👤 Joong S. Jeon
- 👤 Arvind Halliyal
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 01:25
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/60; H10P14/63; H10P14/6326; H10P14/6328; H10P14/6334; C; C23; C23C; C23C16/00; C23C16/02; C23C16/0272; C23C16/029; C23C16/44; C23C16/455; C23C16/45523; H10D; H10D64/00; H10D64/01; H10D64/013; H10D64/01302; H10D64/01332; H10D64/01336; H10D64/0134; H10D64/01342; H10D64/60; H10D64/66; H10D64/68; H10D64/681; H10D64/685; H10P14/66; H10P14/668; H10P14/69; H10P14/692; H10P14/6921; H10P14/6928; H10P14/6929; H10P14/6931; H10P14/6932; H10P14/6933; H10P14/6934; H10P14/6936; H10P14/6938; H10P14/6939; H10P14/69397; H10D1/00; H10D1/60; H10D1/68; H10D1/682; H10D1/684; H10D64/691; H10D64/693; H10P14/6339; H10P14/662; H10P14/693; H10P14/69391; H10P14/69392; H10P14/69395
Claims Analysis
Total Claims: 22
Claim 1
Independent Claim
129 words
A method of fabricating a semiconductor device, comprising: providing a semiconductor substrate; depositing on the semiconductor substrate a composite dielectric material layer comprising elements of at least two dielectric materials, wherein the step of depositing comprises providing a first precursor for a first dielectric material at a first rate and providing a second precursor for a second dielectric material at a second rate, wherein at least a portion of the at least two dielectric materials are deposited simultaneously, and wherein at least one of the first rate and the second rate is varied during the step of depositing, whereby the composite dielectric material layer comprises a concentration gradient of the first dielectric material relative to the second dielectric material in a thickness direction of the composite dielectric material layer.
Claim 2
Independent Claim
129 words
A method of fabricating a semiconductor device, comprising: providing a semiconductor substrate; depositing on the semiconductor substrate a composite dielectric material layer comprising elements of at least two dielectric materials, wherein the step of depositing comprises providing a first precursor for a first dielectric material at a first rate and providing a second precursor for a second dielectric material at a second rate, wherein at least a portion of the at least two dielectric materials are deposited simultaneously, and wherein at least one of the first rate and the second rate is varied during the step of depositing, whereby the composite dielectric material layer comprises a concentration gradient of the first dielectric material relative to the second dielectric material in a thickness direction of the composite dielectric material layer.
Claim 3
Dependent Claim
25 words
The method of claim 1 , wherein at least one of the first dielectric material and the second dielectric material comprises a high-K dielectric material.
Claim 4
Dependent Claim
141 words
The method of claim 2 , wherein the high-K dielectric material comprises at least one of hafnium oxide (HfO 2 ), zirconium oxide (ZrO 2 ), tantalum oxide (Ta 2 O 5 ), barium titanate (BaTiO 3 ), titanium dioxide (TiO 2 ), cerium oxide (CeO 2 ), lanthanum oxide (La 2 O 3 ), lanthanum aluminum oxide (LaAlO 3 ), lead titanate (PbTiO 3 ), strontium titanate (SrTiO 3 ), lead zirconate (PbZrO 3 ), tungsten oxide (WO 3 ), yttrium oxide (Y 2 O 3 ), bismuth silicon oxide (Bi 4 Si 2 O 12 ), barium strontium titanate (BST) (Ba 1−x Sr x TiO 3 ), PMN (PbMg x Nb 1−x O 3 ), PZT (PbZr x Ti 1−x O 3 ), PZN (PbZn x Nb 1−x O 3 ),and PST (PbSc x Ta 1−x O 3 ).
Claim 5
Dependent Claim
25 words
The method of claim 2 , wherein at least one of the first dielectric material and the second dielectric material comprises a standard-K dielectric material.
Claim 6
Dependent Claim
28 words
The method of claim 4 , wherein the standard-K dielectric material comprises one or more of silicon dioxide, silicon oxynitride, silicon nitride, silicon-rich silicon nitride and aluminum oxide.
Claim 7
Dependent Claim
19 words
The method of claim 1 , wherein the at least one rate is varied in a substantially sinusoidal manner.
Claim 8
Dependent Claim
16 words
The method of claim 1 , wherein both rates are varied in a substantially sinusoidal manner.
Claim 9
Dependent Claim
13 words
The method of claim 7 , wherein the rates are out of phase.
Claim 10
Dependent Claim
42 words
The method of claim 1 , wherein the composite dielectric layer comprises a metal silicate, a metal aluminate, or a mixture of a metal silicate and a metal aluminate formed from elements of the first dielectric material and the second dielectric material.
Claim 11
Dependent Claim
17 words
The method of claim 1 , wherein both the first rate and the second rate are varied.
Claim 12
Dependent Claim
16 words
The method of claim 1 , wherein the step of depositing is carried out by CVD.
Claim 13
Independent Claim
122 words
A method of fabricating a semiconductor device, comprising: providing a semiconductor substrate; and depositing by CVD over the semiconductor substrate a composite dielectric material layer comprising elements of at least one high-K dielectric material and at least one standard-K dielectric material, wherein the step of depositing comprises providing a high-K precursor at a first rate and a standard-K precursor at a second rate and varying at least one of the first rate or the second rate, wherein at least a portion of the at least two dielectric materials are deposited simultaneously, whereby the composite dielectric material layer comprises a concentration gradient of the first dielectric material relative to the second dielectric material in a thickness direction of the composite dielectric material layer.
Claim 14
Independent Claim
122 words
A method of fabricating a semiconductor device, comprising: providing a semiconductor substrate; and depositing by CVD over the semiconductor substrate a composite dielectric material layer comprising elements of at least one high-K dielectric material and at least one standard-K dielectric material, wherein the step of depositing comprises providing a high-K precursor at a first rate and a standard-K precursor at a second rate and varying at least one of the first rate or the second rate, wherein at least a portion of the at least two dielectric materials are deposited simultaneously, whereby the composite dielectric material layer comprises a concentration gradient of the first dielectric material relative to the second dielectric material in a thickness direction of the composite dielectric material layer.
Claim 15
Dependent Claim
142 words
The method of claim 12 , wherein the high-K dielectric material comprises at least one of hafnium oxide (HfO 2 ), zirconium oxide (ZrO 2 ), tantalum oxide (Ta 2 O 5 ), barium titanate (BaTiO 3 ), titanium dioxide (TiO 2 ), cerium oxide (CeO 2 ), lanthanum oxide (La 2 O 3 ), lanthanum aluminum oxide (LaAlO 3 ), lead titanate (PbTiO 3 ), strontium titanate (SrTiO 3 ), lead zirconate (PbZrO 3 ), tungsten oxide (WO 3 ), yttrium oxide (Y 2 O 3 ), bismuth silicon oxide (Bi 4 Si 2 O 12 ), barium strontium titanate (BST) (Ba 1−x Sr x TiO 3 ), PMN (PbMg x Nb 1−x O 3 ), PZT (PbZr x Ti 1−x O 3 ), PZN (PbZn x Nb 1−x O 3 ), and PST (PbSc x Ta 1−x O 3 ).
Claim 16
Dependent Claim
28 words
The method of claim 12 , wherein the standard-K dielectric material comprises one or more of silicon dioxide, silicon oxynitride, silicon nitride, silicon-rich silicon nitride and aluminum oxide.
Claim 17
Dependent Claim
19 words
The method of claim 12 , wherein the at least one rate is varied in a substantially sinusoidal manner.
Claim 18
Dependent Claim
16 words
The method of claim 12 , wherein both rates are varied in a substantially sinusoidal manner.
Claim 19
Dependent Claim
13 words
The method of claim 16 , wherein the rates are out of phase.
Claim 20
Dependent Claim
42 words
The method of claim 12 , wherein the composite dielectric layer comprises a metal silicate, a metal aluminate or a mixture of a metal silicate and a metal aluminate, formed from elements of the first dielectric material and the second dielectric material.
Claim 21
Independent Claim
296 words
A method of fabricating a semiconductor device, comprising: providing a semiconductor substrate; and depositing by CVD over the semiconductor substrate a composite dielectric material layer comprising elements of at least one high-K dielectric material and at least one standard-K dielectric material, and having a concentration gradient of the first dielectric material relative to the second dielectric material in a thickness direction of the composite dielectric material layer, wherein the high-K dielectric material comprises at least one of hafnium oxide (HfO 2 ), zirconium oxide (ZrO 2 ), tantalum oxide (Ta 2 O 5 ), barium titanate (BaTiO 3 ), titanium dioxide (TiO 2 ), cerium oxide (CeO 2 ), lanthanum oxide (La 2 O 3 ), lanthanum aluminum oxide (LaAlO 3 ), lead titanate (PbTiO 3 ), strontium titanate (SrTiO 3 ), lead zirconate (PbZrO 3 ), tungsten oxide (WO 3 ), yttrium oxide (Y 2 O 3 ), bismuth silicon oxide (Bi 4 Si 2 O 12 ), barium strontium titanate (BST) (Ba 1−x Sr x TiO 3 ), PMN (PbMg x Nb 1−x O 3 ), PZT (PbZr x Ti 1−x O 3 ), PZN (PbZn x Nb 1−x O 3 ) and PST (PbSc x Ta 1−x O 3 ), the standard-K dielectric material comprises one or more of silicon dioxide, silicon oxynitride, silicon nitride, silicon-rich silicon nitride and aluminum oxide, the step of depositing comprises providing a high-K precursor at a first rate and a standard-K precursor at a second rate and varying at least one of the first rate or the second rate and depositing simultaneously at least a portion of the at least two dielectric materials, and the composite dielectric material layer comprises a metal silicate, a metal aluminate or a mixture of a metal silicate and a metal aluminate.
Claim 22
Independent Claim
296 words
A method of fabricating a semiconductor device, comprising: providing a semiconductor substrate; and depositing by CVD over the semiconductor substrate a composite dielectric material layer comprising elements of at least one high-K dielectric material and at least one standard-K dielectric material, and having a concentration gradient of the first dielectric material relative to the second dielectric material in a thickness direction of the composite dielectric material layer, wherein the high-K dielectric material comprises at least one of hafnium oxide (HfO 2 ), zirconium oxide (ZrO 2 ), tantalum oxide (Ta 2 O 5 ), barium titanate (BaTiO 3 ), titanium dioxide (TiO 2 ), cerium oxide (CeO 2 ), lanthanum oxide (La 2 O 3 ), lanthanum aluminum oxide (LaAlO 3 ), lead titanate (PbTiO 3 ), strontium titanate (SrTiO 3 ), lead zirconate (PbZrO 3 ), tungsten oxide (WO 3 ), yttrium oxide (Y 2 O 3 ), bismuth silicon oxide (Bi 4 Si 2 O 12 ), barium strontium titanate (BST) (Ba 1−x Sr x TiO 3 ), PMN (PbMg x Nb 1−x O 3 ), PZT (PbZr x Ti 1−x O 3 ), PZN (PbZn x Nb 1−x O 3 ) and PST (PbSc x Ta 1−x O 3 ), the standard-K dielectric material comprises one or more of silicon dioxide, silicon oxynitride, silicon nitride, silicon-rich silicon nitride and aluminum oxide, the step of depositing comprises providing a high-K precursor at a first rate and a standard-K precursor at a second rate and varying at least one of the first rate or the second rate and depositing simultaneously at least a portion of the at least two dielectric materials, and the composite dielectric material layer comprises a metal silicate, a metal aluminate or a mixture of a metal silicate and a metal aluminate.
References Cited (Backward Citations)
US5015502A
Cited
US5120672A
Cited
US5654035A
Cited
US5648113A
Cited
US6037003A
Cited
US6278166B1
Cited
US6008091A
Cited
US6309927B1
Cited
US6171900B1
Cited
US6319730B1
Cited
US6337289B1
Cited
US6406960B1
Cited
US6395644B1
Cited
US6407435B1
Cited
US6438030B1
Cited
US20020190311A1
Cited
US6420279B1
Cited
US6461905B1
Cited
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