US6337289B1
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Method and apparatus for integrating a metal nitride film in a semiconductor device
Assignee: Applied Materials Inc
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Filing: 1999-09-24
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Granted: 2002-01-08
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Expires: 2019-09-24
Abstract
Abstract The present invention describes a method of processing a substrate. According to the present invention a dielectric layer is formed on the substrate. The dielectric layer is then exposed in a first chamber to activated nitrogen atoms formed in a second chamber to form a nitrogen passivated dielectric layer. A metal nitride film is then formed on the nitrogen passivated dielectric layer.
Inventors
- 👤 Pravin Narwankar
- 👤 Turgut Sahin
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 02:10
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/60; H10W; H10W20/00; H10W20/01; H10W20/031; H10W20/032; H10W20/046; H10D; H10D1/00; H10D1/60; H10D1/68
Claims Analysis
Total Claims: 12
Claim 1
Independent Claim
109 words
A method of processing a substrate, said method comprising the steps of: forming a dielectric layer on a substrate; placing said substrate in a first chamber; dissociating a nitrogen containing gas in a second chamber to form a plasma containing ionized nitrogen atoms; flowing said ionized nitrogen atoms through a conduit coupling said first chamber and said second chamber so that said ionized nitrogen atoms become electrically neutral activated nitrogen atoms prior to entering said first chamber; exposing said dielectric layer in said first chamber to said activated nitrogen atoms to form a nitrogen passivated dielectric layer; and forming a metal nitride layer on said nitrogen passivated dielectric layer.
Claim 2
Independent Claim
109 words
A method of processing a substrate, said method comprising the steps of: forming a dielectric layer on a substrate; placing said substrate in a first chamber; dissociating a nitrogen containing gas in a second chamber to form a plasma containing ionized nitrogen atoms; flowing said ionized nitrogen atoms through a conduit coupling said first chamber and said second chamber so that said ionized nitrogen atoms become electrically neutral activated nitrogen atoms prior to entering said first chamber; exposing said dielectric layer in said first chamber to said activated nitrogen atoms to form a nitrogen passivated dielectric layer; and forming a metal nitride layer on said nitrogen passivated dielectric layer.
Claim 3
Dependent Claim
14 words
The method of claim 1 wherein said dielectric layer is a metal oxide dielectric.
Claim 4
Dependent Claim
17 words
The method of claim 2 wherein said metal oxide dielectric layer comprises tantalum pentaoxide (TaO 5 ).
Claim 5
Dependent Claim
12 words
The method of claim 1 wherein said metal nitride is titanium nitride.
Claim 6
Dependent Claim
23 words
The method of claim 1 further comprising the step of after forming said metal-nitride layer, exposing said metal-nitride layer to activated nitrogen atoms.
Claim 7
Independent Claim
100 words
A method of processing a substrate, said method comprising a step of: forming a dielectric layer on a substrate; forming a metal nitride layer on said dielectric layer; placing said substrate in a first chamber: dissociating a nitrogen containing gas in a second chamber to form a plasma containing ionized nitrogen atoms; flowing said ionized nitrogen atoms through a conduit coupling said first chamber and said second chamber so that said ionized nitrogen atoms become electrically neutral activated nitrogen atoms prior to entering said first chamber, exposing said metal nitride layer in said first chamber to said activated nitrogen atoms.
Claim 8
Independent Claim
100 words
A method of processing a substrate, said method comprising a step of: forming a dielectric layer on a substrate; forming a metal nitride layer on said dielectric layer; placing said substrate in a first chamber: dissociating a nitrogen containing gas in a second chamber to form a plasma containing ionized nitrogen atoms; flowing said ionized nitrogen atoms through a conduit coupling said first chamber and said second chamber so that said ionized nitrogen atoms become electrically neutral activated nitrogen atoms prior to entering said first chamber, exposing said metal nitride layer in said first chamber to said activated nitrogen atoms.
Claim 9
Dependent Claim
34 words
The method of claim 6 further comprising the step of prior to forming said metal nitride layer, exposing said dielectric layer in the third chamber to activated nitrogen atoms formed in a fourth chamber.
Claim 10
Dependent Claim
14 words
The method of claim 6 wherein said dielectric layer is a metal oxide dielectric.
Claim 11
Dependent Claim
17 words
The method of claim 8 wherein said metal oxide dielectric layer comprises tantalum pentaoxide (TaO 5 ).
Claim 12
Dependent Claim
12 words
The method of claim 6 wherein said metal nitride is titanium nitride.
References Cited (Backward Citations)
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