US5725740A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Adhesion layer for tungsten deposition
Assignee: Applied Materials Inc
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Filing: 1995-06-07
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Granted: 1998-03-10
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Expires: 2015-06-07
Abstract
Abstract A method of removing free titanium from the edge of a substrate having a layer of titanium and a layer of titanium nitride thereover by forming a plasma of a nitrogen-containing gas. The plasma reacts with exposed free titanium to form titanium nitride therefrom. Preferably the dual Ti/TiN depositions and the plasma treatment are all carried out in the same chamber.
Inventors
- 👤 Ivo Raaijmakers
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 02:22
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/40; H10P14/42; H10P14/44; C; C23; C23C; C23C14/00; C23C14/22; C23C14/34; C23C14/35; C23C14/354; C23C14/357; C23C14/58; C23C14/5826; C23C8/00; C23C8/02; C23C8/06; C23C8/36; H10D; H10D64/00; H10D64/01; H10D64/011; H10D64/0111
Claims Analysis
Total Claims: 15
Claim 1
Independent Claim
77 words
A method of eliminating free exposed titanium from an edge of a substrate having sequentially sputtered layers of titanium and titanium nitride thereon, wherein a portion of said substrate was masked by a clamping ring during sputter deposition so that free titanium remains, comprising a) mounting the substrate on a substrate support in a processing chamber, and b) exposing the free exposed titanium on the substrate to a nitrogen-containing plasma to form TiN from the exposed titanium.
Claim 2
Independent Claim
77 words
A method of eliminating free exposed titanium from an edge of a substrate having sequentially sputtered layers of titanium and titanium nitride thereon, wherein a portion of said substrate was masked by a clamping ring during sputter deposition so that free titanium remains, comprising a) mounting the substrate on a substrate support in a processing chamber, and b) exposing the free exposed titanium on the substrate to a nitrogen-containing plasma to form TiN from the exposed titanium.
Claim 3
Dependent Claim
35 words
A method according to claim 1 wherein said plasma is generated by passing a flow of nitrogen-containing gas to the processing chamber fitted with source of RF power and igniting a plasma of said gas.
Claim 4
Dependent Claim
23 words
A method according to claim 2 wherein said nitrogen-containing gas includes a member selected from the group consisting of nitrogen, ammonia and hydrazine.
Claim 5
Dependent Claim
23 words
A method according to claim 1 wherein both titanium and titanium nitride are sputter deposited on the substrate in the same sputtering chamber.
Claim 6
Dependent Claim
20 words
A method according to claim 4 wherein the nitrogen plasma treatment step is carried out in the same sputtering chamber.
Claim 7
Dependent Claim
20 words
A method according to claim 5 wherein the nitrogen plasma is generated by applying RF power to the substrate support.
Claim 8
Dependent Claim
26 words
A method according to claim 5 wherein the nitrogen plasma is generated by applying RF power to a coil surrounding the plasma region of the chamber.
Claim 9
Dependent Claim
15 words
A method according to claim 7 wherein said remote plasma chamber is an ECR chamber.
Claim 10
Dependent Claim
15 words
A method according to claim 7 wherein said remote plasma chamber is a microwave chamber.
Claim 11
Dependent Claim
23 words
A method according to claim 1 wherein a plasma is generated in a remote plasma chamber and then passed into the sputtering chamber.
Claim 12
Dependent Claim
35 words
A method according to claim 1 wherein prior to exposure of the substrate to a plasma, the substrate is lowered to provide a space between the substrate and the clamping ring supported in said chamber.
Claim 13
Independent Claim
106 words
A method of eliminating free exposed titanium from an edge of a substrate having sequentially deposited layers of titanium and titanium nitride thereon, wherein a portion of said substrate was masked by a clamping ring during deposition so that free titanium remains, comprising: a) mounting the substrate on a substrate support in a sputtering chamber fitted with RF generating means connected to said substrate support; b) providing a flow of nitrogen-containing gas to said chamber; and c) igniting a plasma from said nitrogen-containing gas by turning on the RF power supply, thereby forming activated nitrogen species that reacts with any exposed titanium to form titanium nitride.
Claim 14
Independent Claim
106 words
A method of eliminating free exposed titanium from an edge of a substrate having sequentially deposited layers of titanium and titanium nitride thereon, wherein a portion of said substrate was masked by a clamping ring during deposition so that free titanium remains, comprising: a) mounting the substrate on a substrate support in a sputtering chamber fitted with RF generating means connected to said substrate support; b) providing a flow of nitrogen-containing gas to said chamber; and c) igniting a plasma from said nitrogen-containing gas by turning on the RF power supply, thereby forming activated nitrogen species that reacts with any exposed titanium to form titanium nitride.
Claim 15
Dependent Claim
29 words
A method according to claim 12 wherein prior to said plasma treatment, the substrate support is lowered to provide a space between the substrate and the overlying clamping ring.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2001-03-09 | 2001-09-08 | 2002-03-10 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2005-03-09 | 2005-09-08 | 2006-03-10 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2009-03-09 | 2009-09-08 | 2010-03-10 | $7700.00 | Window Closed / Lapsed |