US7077902B2
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Atomic layer deposition methods
Assignee: Micron Technology Inc
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Filing: 2004-04-13
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Granted: 2006-07-18
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Expires: 2024-04-13
Abstract
Abstract An aluminum-containing material deposition method includes depositing a first precursor on a substrate in the substantial absence of a second precursor. The first precursor can contain a chelate of Al(NR 1 R 2 ) x (NR 3 (CH 2 ) z NR 4 R 5 ) y or Al(NR 1 R 2 ) x (NR 3 (CH 2 ) z OR 4 ) y ; where x is 0, 1, or 2; y is 3−x; z is an integer 2 to 8; and R 1 to R 5 are independently selected from among hydrocarbyl groups containing 1 to 10 carbon atoms with silicon optionally substituted for one or more carbon atoms. The method includes depositing the second precursor on the first deposited precursor, the second precursor containing a nitrogen source or an oxidant. A deposition product of the first and second precursors includes at least one of an aluminum nitride or an aluminum oxide. The deposition method can be atomic layer deposition where the first and second precursors are chemisorbed or reacted as monolayers. The first precursor can further be non-pyrophoric.
Inventors
- 👤 Brian A. Vaartstra
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 00:42
CPC Classifications
C; C23; C23C; C23C16/00; C23C16/44; C23C16/455; C23C16/45523; C23C16/45525; C23C16/45553; C23C16/22; C23C16/30; C23C16/301; C23C16/303; C23C16/40; C23C16/403; H; H10; H10P; H10P14/00; H10P14/40; H10P14/42; H10P14/43; H10P14/432; H10P14/60; H10P14/66; H10P14/668; H10P14/63; H10P14/6326; H10P14/6328; H10P14/6334; H10P14/6339; H10P14/69; H10P14/692; H10P14/6938; H10P14/6939; H10P14/69391
Claims Analysis
Total Claims: 23
Claim 1
Independent Claim
141 words
An aluminum-containing material deposition method comprising: depositing a first precursor on a substrate while preventing gas phase reaction of the first precursor and a second precursor with which the first precursor otherwise exhibits gas phase reactivity, the first precursor comprising a chelate of Al(NR 1 R 2 ) x (NR 3 (CH 2 ) z NR 4 R 5 ) y or Al(NR 1 R 2 ) x (NR 3 (CH 2 ) z OR 4 ) y ; where x is 0, 1, or 2; y is 3−x; z is an integer from 2 to 8; and R 1 to R 5 are independently selected from among hydrocarbyl groups comprising 1 to 10 carbon atoms with silicon optionally substituted for one or more carbon atoms; and reacting the deposited first precursor with the second precursor and forming an aluminum-containing material.
Claim 2
Dependent Claim
141 words
An aluminum-containing material deposition method comprising: depositing a first precursor on a substrate while preventing gas phase reaction of the first precursor and a second precursor with which the first precursor otherwise exhibits gas phase reactivity, the first precursor comprising a chelate of Al(NR 1 R 2 ) x (NR 3 (CH 2 ) z NR 4 R 5 ) y or Al(NR 1 R 2 ) x (NR 3 (CH 2 ) z OR 4 ) y ; where x is 0, 1, or 2; y is 3−x; z is an integer from 2 to 8; and R 1 to R 5 are independently selected from among hydrocarbyl groups comprising 1 to 10 carbon atoms with silicon optionally substituted for one or more carbon atoms; and reacting the deposited first precursor with the second precursor and forming an aluminum-containing material.
Claim 3
Dependent Claim
23 words
The method of claim 1 wherein the deposition method comprises atomic layer deposition and the first and second precursors are deposited as monolayers.
Claim 4
Dependent Claim
29 words
The method of claim 1 wherein the first precursor consists essentially of Al(N(CH 3 ) 2 ) 2 (N(CH 3 )CH 2 CH 2 N(CH 3 ) 2 ).
Claim 5
Dependent Claim
23 words
The method of claim 1 wherein depositing the first precursor occurs at a temperature of from about 100° C. to about 450° C.
Claim 6
Dependent Claim
133 words
An atomic layer deposition method comprising: exposing a substrate to a first precursor and chemisorbing a first monolayer containing at least a portion of the first precursor on the substrate, the first precursor comprising a chelate of Al(NR 1 R 2 ) x (NR 3 (CH 2 ) z NR 4 R 5 ) y or Al(NR 1 R 2 ) x (NR 3 (CH 2 ) z OR 4 ) y ; where x is 0, 1, or 2; y is 3−x; z is an integer from 2 to 8; and R 1 to R 5 are independently selected from among hydrocarbyl groups comprising 1 to 10 carbon atoms with silicon optionally substituted for one or more carbon atoms; reacting a second precursor with the first monolayer and forming a product layer.
Claim 7
Dependent Claim
133 words
An atomic layer deposition method comprising: exposing a substrate to a first precursor and chemisorbing a first monolayer containing at least a portion of the first precursor on the substrate, the first precursor comprising a chelate of Al(NR 1 R 2 ) x (NR 3 (CH 2 ) z NR 4 R 5 ) y or Al(NR 1 R 2 ) x (NR 3 (CH 2 ) z OR 4 ) y ; where x is 0, 1, or 2; y is 3−x; z is an integer from 2 to 8; and R 1 to R 5 are independently selected from among hydrocarbyl groups comprising 1 to 10 carbon atoms with silicon optionally substituted for one or more carbon atoms; reacting a second precursor with the first monolayer and forming a product layer.
Claim 8
Dependent Claim
29 words
The method of claim 5 wherein the hydrocarbyl groups are selected from among alkyl, alkenyl, cycloalkyl, cycloalkenyl, or aryl with silicon optionally substituted for one or more carbon atoms.
Claim 9
Dependent Claim
24 words
The method of claim 5 wherein the first precursor is a liquid at a temperature of from about 20° C. to about 100° C.
Claim 10
Dependent Claim
23 words
The method of claim 5 wherein the first precursor is vaporized at a temperature of from about 25° C. to about 150° C.
Claim 11
Dependent Claim
31 words
The method of claim 5 wherein the first precursor exhibits a vapor pressure of at least about 0.1 Torr at a temperature of from about 25° C. to about 150° C.
Claim 12
Dependent Claim
49 words
The method of claim 5 wherein the first precursor exhibits a chemisorption rate of at least about 0.5 monolayers per second at 10 −4 Torr with a solid surface comprising an oxide having hydroxyl groups on the oxide surface, platinum, rhodium, iridium, titanium, TiN, TaN, TaSiN, TiBN, or silicon.
Claim 13
Dependent Claim
11 words
The method of claim 5 wherein the first precursor is non-pyrophoric.
Claim 14
Dependent Claim
22 words
The method of claim 5 wherein the first precursor comprises a single species and is optionally mixed with a non-reactive carrier gas.
Claim 15
Dependent Claim
20 words
The method of claim 5 wherein the substrate comprises at least one of an oxide material and a metal element.
Claim 16
Dependent Claim
23 words
The method of claim 5 wherein chemisorbing the first precursor occurs at a temperature of from about 100° C. to about 450° C.
Claim 17
Dependent Claim
14 words
The method of claim 5 wherein z is an integer from 2 to 4.
Claim 18
Dependent Claim
34 words
The method of claim 5 wherein R 1 to R 5 are independently selected from among hydrocarbyl groups comprising 1 to 5 carbon atoms with silicon optionally substituted for one or more carbon atoms.
Claim 19
Dependent Claim
31 words
The method of claim 5 wherein the second precursor comprises at least one of O 2 , O 3 , H 2 O, ammonia, hydrazine, alkyl-hydrazine compounds, and other hydrazine derivatives.
Claim 20
Dependent Claim
21 words
The method of claim 5 wherein reacting the second precursor occurs at substantially the same temperature as chemisorbing the first monolayer.
Claim 21
Dependent Claim
17 words
The method of claim 5 wherein the product layer comprises AlN or Al 2 O 3 .
Claim 22
Dependent Claim
162 words
An atomic layer deposition method comprising: exposing a substrate to a first precursor and chemisorbing a first monolayer containing at least a portion of the first precursor on the substrate at a temperature of from about 150° C. to about 250° C., the first precursor comprising Al(N(CH 3 ) 2 ) 2 (N(CH 3 )CH 2 CH 2 N(CH 3 ) 2 ) and the substrate comprising at least one of metal oxide, platinum, titanium, and TiN; purging excess first precursor from the over the substrate; reacting a second precursor with the first monolayer and forming a product layer containing at least one of AlN or Al 2 O 3 , the second precursor comprising at least one of O 2 , O 3 , H 2 O, ammonia, hydrazine, alkyl-hydrazine compounds, and other hydrazine derivatives; purging excess second precursor from the over the substrate; and successively repeating exposure and purging of the first and second precursors to form additional product layers.
Claim 23
Dependent Claim
162 words
An atomic layer deposition method comprising: exposing a substrate to a first precursor and chemisorbing a first monolayer containing at least a portion of the first precursor on the substrate at a temperature of from about 150° C. to about 250° C., the first precursor comprising Al(N(CH 3 ) 2 ) 2 (N(CH 3 )CH 2 CH 2 N(CH 3 ) 2 ) and the substrate comprising at least one of metal oxide, platinum, titanium, and TiN; purging excess first precursor from the over the substrate; reacting a second precursor with the first monolayer and forming a product layer containing at least one of AlN or Al 2 O 3 , the second precursor comprising at least one of O 2 , O 3 , H 2 O, ammonia, hydrazine, alkyl-hydrazine compounds, and other hydrazine derivatives; purging excess second precursor from the over the substrate; and successively repeating exposure and purging of the first and second precursors to form additional product layers.
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