US6673701B1
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US
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Atomic layer deposition methods
Assignee: Micron Technology Inc
•
Filing: 2002-08-27
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Granted: 2004-01-06
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Expires: 2022-08-27
Abstract
Abstract An atomic layer deposition method includes positioning a semiconductor substrate within an atomic layer deposition chamber. A first precursor gas is flowed to the substrate within the atomic layer deposition chamber effective to form a first monolayer on the substrate. The first precursor gas flowing comprises a plurality of first precursor gas pulses. The plurality of first precursor gas pulses comprises at least one total period of time between two immediately adjacent first precursor gas pulses when no gas is fed to the chamber. After forming the first monolayer on the substrate, a second precursor gas different in composition from the first is flowed to the substrate within the deposition chamber effective to form a second monolayer on the first monolayer. Other aspects and implementations are contemplated.
Inventors
- 👤 Eugene Marsh
- 👤 Brian Vaartstra
- 👤 Paul J. Castrovillo
- 👤 Cem Basceri
- 👤 Garo J. Derderian
- 👤 Gurtej S. Sandhu
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 02:23
CPC Classifications
C; C30; C30B; C30B25/00; C30B25/02; C30B25/14; C23; C23C; C23C16/00; C23C16/44; C23C16/455; C23C16/45523; C23C16/45525; C23C16/45527
Claims Analysis
Total Claims: 39
Claim 1
Independent Claim
146 words
An atomic layer deposition method, comprising: positioning a semiconductor substrate within an atomic layer deposition chamber; flowing a first precursor gas to the substrate within the atomic layer deposition chamber effective to form a first monolayer on the substrate, said first precursor gas flowing comprising a plurality of first precursor gas pulses, the plurality of first precursor gas pulses comprising at least one total period of time between two immediately adjacent first precursor gas pulses when no gas is fed to the chamber; after forming the first monolayer on the substrate, flowing a second precursor gas different in composition from the first to the substrate within the deposition chamber effective to form a second monolayer on the first monolayer; and comprising flowing multiple time spaced inert purge gas pulses to the substrate within the deposition chamber intermediate the first precursor flowing and the second precursor flowing.
Claim 2
Dependent Claim
146 words
An atomic layer deposition method, comprising: positioning a semiconductor substrate within an atomic layer deposition chamber; flowing a first precursor gas to the substrate within the atomic layer deposition chamber effective to form a first monolayer on the substrate, said first precursor gas flowing comprising a plurality of first precursor gas pulses, the plurality of first precursor gas pulses comprising at least one total period of time between two immediately adjacent first precursor gas pulses when no gas is fed to the chamber; after forming the first monolayer on the substrate, flowing a second precursor gas different in composition from the first to the substrate within the deposition chamber effective to form a second monolayer on the first monolayer; and comprising flowing multiple time spaced inert purge gas pulses to the substrate within the deposition chamber intermediate the first precursor flowing and the second precursor flowing.
Claim 3
Dependent Claim
10 words
The method of claim 1 wherein the plurality is two.
Claim 4
Dependent Claim
12 words
The method of claim 1 wherein the plurality is more than two.
Claim 5
Dependent Claim
27 words
The method of claim 1 comprising flowing at least one inert purge gas pulse to the substrate within the chamber immediately prior to the first precursor flowing.
Claim 6
Dependent Claim
20 words
The method of claim 1 wherein the first precursor comprises TiCl 4 and the second precursor comprises NH 3 .
Claim 7
Dependent Claim
20 words
The method of claim 1 wherein the first precursor comprises NH 3 and the second precursor comprises TiCl 4 .
Claim 8
Dependent Claim
17 words
The method of claim 1 wherein the first precursor comprises trimethylaluminum and the second precursor comprises ozone.
Claim 9
Dependent Claim
17 words
The method of claim 1 wherein the first precursor comprises ozone and the second precursor comprises trimethylaluminum.
Claim 10
Dependent Claim
29 words
The method of claim 1 wherein the total period of time is less than time of gas flow of either of the two immediately adjacent first precursor gas pulses.
Claim 11
Dependent Claim
29 words
The method of claim 1 wherein the total period of time is greater than time of gas flow of each of the two immediately adjacent first precursor gas pulses.
Claim 12
Dependent Claim
31 words
The method of claim 1 wherein the total period of time is greater than time of gas flow of both of the two immediately adjacent first precursor gas pulses in combination.
Claim 13
Dependent Claim
15 words
The method of claim 1 wherein the two immediately adjacent pulses are equal in time.
Claim 14
Dependent Claim
16 words
The method of claim 1 wherein the two immediately adjacent pulses are not equal in time.
Claim 15
Dependent Claim
32 words
The method of claim 1 wherein the two immediately adjacent pulses are equal in time, the total period of time being equal to the time of each of the immediately adjacent pulses.
Claim 16
Dependent Claim
26 words
The method of claim 1 wherein the second monolayer is formed over an area of the substrate, the second monolayer being continuously formed over the area.
Claim 17
Dependent Claim
145 words
An atomic layer deposition method, comprising: positioning a semiconductor substrate within an atomic layer deposition chamber; flowing a first precursor gas to the substrate within the atomic layer deposition chamber effective to form a first monolayer on the substrate; after forming the first monolayer on the substrate, flowing a second precursor gas different in composition from the first to the substrate within the deposition chamber effective to form a second monolayer on the first monolayer; after forming the second monolayer on the substrate, flowing a third precursor gas different in composition from the second to the substrate within the deposition chamber effective to form a third monolayer on the substrate, the third precursor being different in composition from the first precursor; and said second precursor gas flowing comprising a plurality of time spaced second precursor gas pulses intermediate the first and third precursor gas flowings.
Claim 18
Dependent Claim
145 words
An atomic layer deposition method, comprising: positioning a semiconductor substrate within an atomic layer deposition chamber; flowing a first precursor gas to the substrate within the atomic layer deposition chamber effective to form a first monolayer on the substrate; after forming the first monolayer on the substrate, flowing a second precursor gas different in composition from the first to the substrate within the deposition chamber effective to form a second monolayer on the first monolayer; after forming the second monolayer on the substrate, flowing a third precursor gas different in composition from the second to the substrate within the deposition chamber effective to form a third monolayer on the substrate, the third precursor being different in composition from the first precursor; and said second precursor gas flowing comprising a plurality of time spaced second precursor gas pulses intermediate the first and third precursor gas flowings.
Claim 19
Dependent Claim
28 words
The method of claim 16 comprising at least one total period of time between two adjacent second precursor gas pulses when no gas is ted to the chamber.
Claim 20
Dependent Claim
28 words
The method of claim 16 comprising at least one total period of time between two adjacent second precursor gas pulses when some gas is fed to the chamber.
Claim 21
Dependent Claim
37 words
The method of claim 16 comprising at least one total period of time between two adjacent second precursor gas pulses within which at least one inert purge gas pulse is fed to the substrate within the chamber.
Claim 22
Dependent Claim
10 words
The method of claim 16 wherein the plurality is two.
Claim 23
Dependent Claim
12 words
The method of claim 16 wherein the plurality is more than two.
Claim 24
Dependent Claim
28 words
The method of claim 16 wherein the plurality is two, and comprising a total period of time between said two when no gas is fed to the chamber.
Claim 25
Dependent Claim
28 words
The method of claim 16 wherein the plurality is two, and comprising a total period of time between said two when some gas is fed to the chamber.
Claim 26
Dependent Claim
37 words
The method of claim 16 wherein the plurality is two, and comprising a total period of time between said two within which at least one inert purge gas pulse is fed to the substrate within the chamber.
Claim 27
Dependent Claim
30 words
The method of claim 16 comprising flowing at least one inert purge gas pulse to the substrate within the chamber intermediate the first precursor flowing and the third precursor flowing.
Claim 28
Dependent Claim
31 words
The method of claim 16 comprising flowing multiple time spaced inert purge gas pulses to the substrate within the deposition chamber intermediate the first precursor flowing and the third precursor flowing.
Claim 29
Dependent Claim
26 words
The method of claim 16 wherein the second monolayer is formed over an area of the substrate, the second monolayer being continuously formed over the area.
Claim 30
Dependent Claim
152 words
An atomic layer deposition method, comprising: positioning a semiconductor substrate within an atomic layer deposition chamber; flowing a first precursor gas to the substrate within the atomic layer deposition chamber effective to form a first monolayer on the substrate; after forming the first monolayer on the substrate, flowing a second precursor gas different in composition from the first to the substrate within the deposition chamber effective to form a second monolayer on the first monolayer; after forming the second monolayer on the substrate, flowing a third precursor gas different in composition from the second to the substrate within the deposition chamber effective to form a third monolayer on the substrate; and said second precursor gas flowing comprising at least two time abutting second precursor gas pulses intermediate the first and third precursor gas flowings, said two time abutting second precursor gas pulses being characterized by different flow rates of the second precursor.
Claim 31
Dependent Claim
152 words
An atomic layer deposition method, comprising: positioning a semiconductor substrate within an atomic layer deposition chamber; flowing a first precursor gas to the substrate within the atomic layer deposition chamber effective to form a first monolayer on the substrate; after forming the first monolayer on the substrate, flowing a second precursor gas different in composition from the first to the substrate within the deposition chamber effective to form a second monolayer on the first monolayer; after forming the second monolayer on the substrate, flowing a third precursor gas different in composition from the second to the substrate within the deposition chamber effective to form a third monolayer on the substrate; and said second precursor gas flowing comprising at least two time abutting second precursor gas pulses intermediate the first and third precursor gas flowings, said two time abutting second precursor gas pulses being characterized by different flow rates of the second precursor.
Claim 32
Dependent Claim
18 words
The method of claim 28 wherein said two time abutting second precursor gas pulses are equal in time.
Claim 33
Dependent Claim
44 words
The method of claim 28 wherein a first in time of said two time abutting second precursor gas pulses is greater in flow time than that of a second in time of an immediately adjacent of said two time abutting second precursor gas pulses.
Claim 34
Dependent Claim
44 words
The method of claim 28 wherein a second in time of said two time abutting second precursor gas pulses is greater in flow time than that of a first in time of an immediately adjacent of said two time abutting second precursor gas pulses.
Claim 35
Dependent Claim
30 words
The method of claim 28 comprising flowing at least one inert purge gas pulse to the substrate within the chamber intermediate the first precursor flowing and the third precursor flowing.
Claim 36
Dependent Claim
31 words
The method of claim 28 comprising flowing multiple time spaced inert purge gas pulses to the substrate within the deposition chamber intermediate the first precursor flowing and the third precursor flowing.
Claim 37
Dependent Claim
18 words
The method of claim 28 wherein the third precursor is the same in composition as the first precursor.
Claim 38
Dependent Claim
17 words
The method of claim 28 wherein the third precursor is different in composition from the first precursor.
Claim 39
Dependent Claim
26 words
The method of claim 28 wherein the second monolayer is formed over an area of the substrate, the second monolayer being continuously formed over the area.
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