US6403156B2
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Method of forming an A1203 film in a semiconductor device
Assignee: SK Hynix Inc
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Filing: 2001-06-18
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Granted: 2002-06-11
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Expires: 2021-06-18
Abstract
Abstract A method is disclosed for forming an aluminum oxide film on a semiconductor device. In a process of depositing an aluminum oxide film by atomic layer deposition method using TMA (trimethyl aluminum; Al(CH 3 ) 3 ) as an aluminum source and H 2 O as an oxygen reaction gas, the disclosed method supplies a NH 3 reaction gas at the same time when an aluminum source is supplied. Therefore, it can increase the growth rate of an aluminum oxide film and can also improve the characteristic of preventing penetration of hydrogen into an underlying layer or a semiconductor substrate. Thus, the disclosed method can prevent degradation in a charge storage characteristic in a capacitor and lower in an electrical characteristic of various elements, thus improving an overall characteristic of a semiconductor device.
Inventors
- 👤 Hyuk Kyoo Jang
- 👤 Chan Lim
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 00:54
CPC Classifications
C; C23; C23C; C23C16/00; C23C16/44; C23C16/455; C23C16/45523; C23C16/45525; C23C16/45527; C23C16/45534; C23C16/22; C23C16/30; C23C16/40; C23C16/403; H; H10; H10P; H10P14/00; H10P14/60; H10P14/63; H10P14/6326; H10P14/6328; H10P14/6334; H10P14/6339; H10P14/69; H10P14/692; H10P14/6938; H10P14/6939; H10P14/69391
Claims Analysis
Total Claims: 16
Claim 1
Independent Claim
97 words
A method of forming an aluminum oxide film on a substrate, comprising: a first step of simultaneously supplying an aluminum source and NH 3 gas via individual lines into a reactor in which a substrate is mounted; a second step of removing un-reacted aluminum source gas and reaction by-products from said reactor; a third step of supplying oxygen reaction gas into said reactor; a fourth step of removing un-reacted oxygen gas from said reactor; and a fifth step of repeatedly performing said first step through said fourth step to form an aluminum oxide film on the substrate.
Claim 2
Independent Claim
97 words
A method of forming an aluminum oxide film on a substrate, comprising: a first step of simultaneously supplying an aluminum source and NH 3 gas via individual lines into a reactor in which a substrate is mounted; a second step of removing un-reacted aluminum source gas and reaction by-products from said reactor; a third step of supplying oxygen reaction gas into said reactor; a fourth step of removing un-reacted oxygen gas from said reactor; and a fifth step of repeatedly performing said first step through said fourth step to form an aluminum oxide film on the substrate.
Claim 3
Dependent Claim
23 words
The method of claim 1 , wherein the reactor is maintained at the temperature ranging from about 200° C. to about 450° C.
Claim 4
Dependent Claim
32 words
The method of claim 1 , wherein the aluminum source is supplied into said reactor using TMA or MTMA for a time period ranging from about 0.1 second to about 3 seconds.
Claim 5
Dependent Claim
42 words
The method of claim 1 , wherein the NH 3 gas is supplied into said reactor at a flow rate ranging from about 10 sccm to about 500 sccm for a time period ranging from about 0.1 second to about 3 seconds.
Claim 6
Dependent Claim
35 words
The method of claim 1 , wherein the second step or the fourth step purges said reactor by supplying N 2 gas for a time period ranging from about 0.1 second to about 3 seconds.
Claim 7
Dependent Claim
35 words
The method of claim 1 , wherein the oxygen reaction gas is supplied in to the reactor using H 2 O vapor for a time period ranging from about 0.1 second to about 3 seconds.
Claim 8
Independent Claim
92 words
A method of forming an aluminum oxide film on a substrate, comprising: a first step of supplying an aluminum source into a reactor in which a substrate is mounted; a second step of removing un-reacted aluminum source and reaction by-products from said reactor; a third step of supplying oxygen reaction gas and NH 3 gas into said reactor; a fourth step of removing un-reacted oxygen gas from said reactor; and a fifth step of repeatedly performing said first step thorough said fourth step to form the aluminum oxide film on the substrate.
Claim 9
Independent Claim
92 words
A method of forming an aluminum oxide film on a substrate, comprising: a first step of supplying an aluminum source into a reactor in which a substrate is mounted; a second step of removing un-reacted aluminum source and reaction by-products from said reactor; a third step of supplying oxygen reaction gas and NH 3 gas into said reactor; a fourth step of removing un-reacted oxygen gas from said reactor; and a fifth step of repeatedly performing said first step thorough said fourth step to form the aluminum oxide film on the substrate.
Claim 10
Dependent Claim
23 words
The method of claim 7 , wherein the reactor is maintained at the temperature ranging from about 200° C. to about 450° C.
Claim 11
Dependent Claim
42 words
The method of manufacturing an aluminum oxide film on a substrate according to claim 8 , wherein the aluminum source is supplied into said reactor using TMA or MTMA for a time period ranging from about 0.1 second to about 3 seconds.
Claim 12
Dependent Claim
45 words
The method of claim 8 , wherein the activation gas is supplied into said reactor using NH 3 gas at the flow rate ranging from about 10 sccm to about 500 sccm for a time period ranging from about 0.1 second to about 3 seconds.
Claim 13
Dependent Claim
42 words
The method of claim 8 , wherein the NH 3 gas is supplied into said reactor at a flow rate ranging from about 10 sccm to about 500 sccm for a time period ranging from about 0.1 second to about 3 seconds.
Claim 14
Dependent Claim
35 words
The method of claim 7 , wherein the oxygen reaction gas is supplied in to the reactor using H 2 O vapor for a time period ranging from about 0.1 second to about 3 seconds.
Claim 15
Independent Claim
102 words
A method of forming an aluminum oxide film on a substrate, comprising: a first step of supplying an aluminum source into a reactor in which a substrate is mounted; a second step of removing un-reacted aluminum source and reaction by-products from said reactor; a third step of supplying oxygen reaction gas into said reactor; a fourth step of removing un-reacted oxygen gas from said reactor; and a fifth step of repeatedly performing said first step through said fourth step to form an aluminum oxide film on the substrate; wherein NH 3 gas is supplied in the second step or the fourth step.
Claim 16
Independent Claim
102 words
A method of forming an aluminum oxide film on a substrate, comprising: a first step of supplying an aluminum source into a reactor in which a substrate is mounted; a second step of removing un-reacted aluminum source and reaction by-products from said reactor; a third step of supplying oxygen reaction gas into said reactor; a fourth step of removing un-reacted oxygen gas from said reactor; and a fifth step of repeatedly performing said first step through said fourth step to form an aluminum oxide film on the substrate; wherein NH 3 gas is supplied in the second step or the fourth step.
References Cited (Backward Citations)
US6124158A
Cited
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