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Dielectric layer for semiconductor device and method of manufacturing the same
Assignee: Samsung Electronics Co Ltd
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Filing: 2001-02-02
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Granted: 2005-01-18
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Expires: 2021-02-02
Abstract
Abstract A multi-layer dielectric layer structure for a semiconductor device. The multi-layer dielectric layer structure comprises a silicate interface layer having a dielectric constant greater than that of silicon nitride and a high-k dielectric layer overlying the silicate interface layer. The high-k dielectric layer comprises one or more ordered pairs of first and second layers. With the present invention, the dielectric constant of the high-k dielectric layer can be optimized while improving interface characteristics. With a higher crystallization temperature realized by forming the multi-layer structure, each of whose layers is not more than the critical thickness, leakage current can be reduced, thereby improving device performance.
Inventors
- 👤 Jongho Lee
- 👤 Nae-in Lee
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 00:43
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/60; H10D; H10D64/00; H10D64/01; H10D64/013; H10D64/01302; H10D64/01332; H10D64/01336; H10D64/0134; H10D1/00; H10D1/60; H10D1/62; H10D1/66; H10D30/00; H10D30/60; H10D30/68; H10D30/681; H10D64/01342; H10D64/01344; H10D64/60; H10D64/66; H10D64/68; H10D64/681; H10D64/685; H10D64/691; H10D64/693; H10D1/68; H10D1/682; H10D1/684
Claims Analysis
Total Claims: 47
Claim 1
Independent Claim
39 words
A multi-layer structure for a semiconductor device, comprising: a silicate interface layer; and a high-k dielectric layer overlying the silicate interface layer, wherein the high-k dielectric layer has a dielectric constant greater than that of the silicate interface layer.
Claim 2
Dependent Claim
39 words
A multi-layer structure for a semiconductor device, comprising: a silicate interface layer; and a high-k dielectric layer overlying the silicate interface layer, wherein the high-k dielectric layer has a dielectric constant greater than that of the silicate interface layer.
Claim 3
Dependent Claim
22 words
The multi-layer structure of claim 1 , wherein the silicate interface layer has a dielectric constant greater than that of silicon nitride.
Claim 4
Dependent Claim
26 words
The multi-layer structure of claim 1 , wherein the silicate interface layer is formed of a metal silicate material (M 1-x Si x O 2 ).
Claim 5
Dependent Claim
12 words
The multi-layer structure of claim 3 , wherein x is approximately 0.30-0.99.
Claim 6
Dependent Claim
29 words
The multi-layer structure of claim 3 , wherein the metal “M” is selected from the group consisting of hafnium (Hf), zirconium (Zr), tantalum (Ta), titanium (Ti) and aluminum (Al).
Claim 7
Dependent Claim
26 words
The multi-layer structure of claim 1 , wherein the silicate interface layer is formed by an ALD technique, a MOCVD technique or a reactive sputtering technique.
Claim 8
Dependent Claim
21 words
The multi-layer structure of claim 1 , wherein the silicate interface layer is formed to a thickness of approximately 5-10 angstroms.
Claim 9
Dependent Claim
17 words
The multi-layer structure of claim 1 , wherein the high-k dielectric layer is a metal oxide layer.
Claim 10
Dependent Claim
53 words
The multi-layer structure of claim 8 , wherein the metal oxide layer is an HfO 2 layer, a ZrO 2 layer, a Ta 2 O 3 layer, an Al 2 O 3 layer, a TiO 2 layer, an Y 2 O 3 layer, or a BST layer, a PZT layer, or combinations thereof.
Claim 11
Dependent Claim
26 words
The multi-layer structure of claim 8 , wherein the metal oxide layer is formed using an ALD technique, a MOCVD technique or a reactive sputtering technique.
Claim 12
Dependent Claim
39 words
The multi-layer structure of claim 8 , wherein the silicate interface layer is formed of a metal silicate material, and wherein the metal of the silicate interface layer is the same as the metal of the metal oxide layer.
Claim 13
Dependent Claim
23 words
The multi-layer structure of claim 1 , wherein the high-k dielectric layer comprises one or more ordered pairs of first and second layers.
Claim 14
Dependent Claim
41 words
The multi-layer structure of claim 12 , wherein the first layer is formed of HfO 2 , Ta 2 O 3 , Y 2 O 3 or ZrO 2 and the second layer is formed of Al 2 O 3 .
Claim 15
Dependent Claim
32 words
The multi-layer structure of claim 12 , wherein the first layer has a first fixed charge and the second layer has a second fixed charge opposite that of the first fixed charge.
Claim 16
Dependent Claim
24 words
The multi-layer structure of claim 12 , wherein the thickness of the second layer is approximately one half the thickness of the first layer.
Claim 17
Dependent Claim
33 words
The multi-layer structure of claim 15 , wherein the first layer is formed to a thickness of approximately 10 angstroms and the second layer is formed to a thickness of approximately 5 angstroms.
Claim 18
Dependent Claim
31 words
The multi-layer structure of claim 12 , wherein a total thickness of the second layer is not more than approximately one third of the total thickness of the high-k dielectric layer.
Claim 19
Dependent Claim
23 words
The multi-layer structure of claim 12 , wherein the upper most layer of the high-k dielectric layer is Al 2 O 3 .
Claim 20
Dependent Claim
66 words
A multi-layer structure for a semiconductor device, comprising: a silicate interface layer having a dielectric constant greater than that of silicon nitride; and a high-k dielectric layer overlying the silicate interface layer, wherein the high-k dielectric layer comprises one or more ordered pairs of first and second layers, and wherein the high-k dielectric layer has a dielectric constant greater than that of the silicate interface layer.
Claim 21
Dependent Claim
66 words
A multi-layer structure for a semiconductor device, comprising: a silicate interface layer having a dielectric constant greater than that of silicon nitride; and a high-k dielectric layer overlying the silicate interface layer, wherein the high-k dielectric layer comprises one or more ordered pairs of first and second layers, and wherein the high-k dielectric layer has a dielectric constant greater than that of the silicate interface layer.
Claim 22
Dependent Claim
47 words
The multi-layer structure of claim 19 , wherein the silicate interface layer is formed of a metal silicate material (M 1-x Si x O 2 ), the metal “M” being selected from the group consisting of hafnium (Hf), zirconium (Zr), tantalum (Ta), titanium (Ti) and aluminum (Al).
Claim 23
Dependent Claim
41 words
The multi-layer structure of claim 19 , wherein the first layer is formed of HfO 2 , Ta 2 O 3 , Y 2 O 3 or ZrO 2 and the second layer is formed of Al 2 O 3 .
Claim 24
Dependent Claim
24 words
The multi-layer structure of claim 19 , wherein the thickness of the second layer is approximately one half the thickness of the first layer.
Claim 25
Dependent Claim
31 words
The multi-layer structure of claim 19 , wherein a total thickness of the second layer is not more than approximately one third of the total thickness of the high-k dielectric layer.
Claim 26
Dependent Claim
23 words
The multi-layer structure of claim 19 , wherein the upper most layer of the high-k dielectric layer is Al 2 O 3 .
Claim 27
Dependent Claim
57 words
A transistor comprising: a substrate; a silicate interface layer formed over the substrate; and a high-k dielectric layer formed over the silicate interface layer; a gate formed over the high-k dielectric layer; and a source/drain region formed adjacent the gate, wherein the high-k dielectric layer has a dielectric constant greater than that of the silicate interface layer.
Claim 28
Dependent Claim
57 words
A transistor comprising: a substrate; a silicate interface layer formed over the substrate; and a high-k dielectric layer formed over the silicate interface layer; a gate formed over the high-k dielectric layer; and a source/drain region formed adjacent the gate, wherein the high-k dielectric layer has a dielectric constant greater than that of the silicate interface layer.
Claim 29
Dependent Claim
28 words
The transistor of claim 25 , wherein an upper most portion of the high-k dielectric layer is Al 2 O 3 , and wherein said gate comprises poly-silicon.
Claim 30
Dependent Claim
57 words
A non-volatile memory, comprising: a substrate; a floating gate overlying the substrate; a silicate interface layer formed over the floating gate; a high-k dielectric layer formed over the silicate interface layer; and a control gate overlying the high-k dielectric layer, wherein the high-k dielectric layer has a dielectric constant greater than that of the silicate interface layer.
Claim 31
Dependent Claim
57 words
A non-volatile memory, comprising: a substrate; a floating gate overlying the substrate; a silicate interface layer formed over the floating gate; a high-k dielectric layer formed over the silicate interface layer; and a control gate overlying the high-k dielectric layer, wherein the high-k dielectric layer has a dielectric constant greater than that of the silicate interface layer.
Claim 32
Dependent Claim
56 words
A capacitor for a semiconductor device, comprising; a lower electrode; a silicate interface layer formed over the lower electrode; a high-k dielectric layer formed over the silicate interface layer; and an upper electrode formed over the high-k dielectric layer wherein the high-k dielectric layer has a dielectric constant greater than that of the silicate interface layer.
Claim 33
Dependent Claim
56 words
A capacitor for a semiconductor device, comprising; a lower electrode; a silicate interface layer formed over the lower electrode; a high-k dielectric layer formed over the silicate interface layer; and an upper electrode formed over the high-k dielectric layer wherein the high-k dielectric layer has a dielectric constant greater than that of the silicate interface layer.
Claim 34
Dependent Claim
23 words
The multi-layer structure of claim 1 , wherein the multi-layer is used for a capacitor between a lower electrode and an upper electrode.
Claim 35
Dependent Claim
23 words
The multi-layer structure of claim 13 , wherein the multi-layer is used for a capacitor between a lower electrode and an upper electrode.
Claim 36
Dependent Claim
23 words
The multi-layer structure of claim 19 , wherein the multi-layer is used for a capacitor between a lower electrode and an upper electrode.
Claim 37
Dependent Claim
23 words
The multi-layer structure of claim 21 , wherein the multi-layer is used for a capacitor between a lower electrode and an upper electrode.
Claim 38
Dependent Claim
46 words
The transistor of claim 25 , wherein the silicate interface layer is formed of a metal silicate material (M 1-x Si x O 2 ), the metal “M” being selected from the group consisting of hafnium (Hf), zirconium (Zr), tantalum (Ta), titanium (Ti) and aluminum (Al).
Claim 39
Dependent Claim
57 words
The transistor of claim 25 , wherein the high-k dielectric layer comprises one or more ordered pairs of first and second layers, and wherein the first layer is formed of HfO 2 , Ta 2 O 3 , Y 2 O 3 or Zro 2 and the second layer is formed of Al 2 O 3 .
Claim 40
Dependent Claim
47 words
The non-volatile memory of claim 27 , wherein the silicate interface layer is formed of a metal silicate material (M 1-x Si x O 2 ), the metal “M” being selected from the group consisting of hafnium (Hf), zirconium (Zr), tantalum (Ta), titanium (Ti) and aluminum (Al).
Claim 41
Dependent Claim
58 words
The non-volatile memory of claim 27 , wherein the high-k dielectric layer comprises one or more ordered pairs of first and second layers, and wherein the first layer is formed of HfO 2 , Ta 2 O 3 , Y 2 O 3 or Zro 2 and the second layer is formed of Al 2 O 3 .
Claim 42
Dependent Claim
46 words
The capacitor of claim 28 , wherein the silicate interface layer is formed of a metal silicate material (M 1-x Si x O 2 ), the metal “M” being selected from the group consisting of hafnium (Hf), zirconium (Zr), tantalum (Ta), titanium (Ti) and aluminum (Al).
Claim 43
Dependent Claim
57 words
The capacitor of claim 28 , wherein the high-k dielectric layer comprises one or more ordered pairs of first and second layers, and, wherein the first layer is formed of HfO 2 , Ta 2 O 3 , Y 2 O 3 or Zro 2 and the second layer is formed of Al 2 O 3 .
Claim 44
Dependent Claim
67 words
A capacitor, comprising: a lower electrode; a silicate interface layer having a dielectric constant greater than that of silicon nitride; a high-k dielectric layer overlying the silicate interface layer, wherein the high-k dielectric layer comprises one or more ordered pairs of first and second layers, and wherein the high-k dielectric layer has a dielectric constant greater than that of the silicate interface layer; and an upper electrode.
Claim 45
Dependent Claim
67 words
A capacitor, comprising: a lower electrode; a silicate interface layer having a dielectric constant greater than that of silicon nitride; a high-k dielectric layer overlying the silicate interface layer, wherein the high-k dielectric layer comprises one or more ordered pairs of first and second layers, and wherein the high-k dielectric layer has a dielectric constant greater than that of the silicate interface layer; and an upper electrode.
Claim 46
Dependent Claim
46 words
The capacitor of claim 39 , wherein the silicate interface layer is formed of a metal silicate material (M 1-x Si x O 2 ), the metal “M” being selected from the group consisting of hafnium (Hf), zirconium (Zr), tantalum (Ta), titanium (Ti) and aluminum (Al).
Claim 47
Dependent Claim
40 words
The capacitor of claim 39 , wherein the first layer is formed of HfO 2 , Ta 2 O 3 , Y 2 O 3 or ZrO 2 and the second layer is formed of Al 2 O 3 .
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2008-01-18 | 2008-07-19 | 2009-01-18 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2012-01-18 | 2012-07-19 | 2013-01-18 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2016-01-18 | 2016-07-19 | 2017-01-18 | $7700.00 | Window Closed / Lapsed |