US7030042B2
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Systems and methods for forming tantalum oxide layers and tantalum precursor compounds
Assignee: Micron Technology Inc
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Filing: 2002-08-28
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Granted: 2006-04-18
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Expires: 2022-08-28
Abstract
Abstract A method of forming (and apparatus for forming) a tantalum oxide layer on a substrate, particularly a semiconductor substrate or substrate assembly, using a vapor deposition process and a tantalum precursor compound that includes alkoxide ligands, for example.
Inventors
- 👤 Brian A. Vaartstra
- 👤 Timothy A. Quick
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 01:24
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/60; H10P14/69; H10P14/692; H10P14/6938; H10P14/6939; H10P14/69393; C; C07; C07F; C07F9/00; C07F9/005; C23; C23C; C23C16/00; C23C16/22; C23C16/30; C23C16/40; C23C16/405; C23C16/44; C23C16/455; C23C16/45523; C23C16/45525; C23C16/45553; H10D; H10D1/00; H10D1/60; H10D1/68; H10P14/63; H10P14/6326; H10P14/6328; H10P14/6334; H10P14/6339; H10P14/66; H10P14/668
Claims Analysis
Total Claims: 37
Claim 1
Independent Claim
178 words
A method of forming a tantalum oxide layer on a substrate, the method comprising: providing a substrate; providing a vapor comprising one or more precursor compounds of the formula Ta(OR 1 ) x (O—R 2 —OR 3 ) y (Formula I), wherein each R is an organic group, x=3-4, and y=1-2; providing one or more sources of a reaction gas; and directing the one or more vaporized precursor compounds and the one or more reaction gases to the substrate to form a tantalum oxide layer on one or more surfaces of the substrate; wherein Ta(OR 1 ) x (O—R 2 —OR 3 ) y is selected from the group consisting of Ta(OEt) 4 (OCH 2 CH 2 O i Pr), Ta(OMe) 4 (OCH 2 CH 2 O i Pr), and combinations thereof, wherein Me=methyl, Et=ethyl, and i Pr=isopropyl; wherein providing the vapor comprising the one or more precursor compounds and directing the one or more precursor compounds and the one or more reaction gases is accomplished using an atomic layer deposition process comprising a plurality of deposition cycles.
Claim 2
Independent Claim
178 words
A method of forming a tantalum oxide layer on a substrate, the method comprising: providing a substrate; providing a vapor comprising one or more precursor compounds of the formula Ta(OR 1 ) x (O—R 2 —OR 3 ) y (Formula I), wherein each R is an organic group, x=3-4, and y=1-2; providing one or more sources of a reaction gas; and directing the one or more vaporized precursor compounds and the one or more reaction gases to the substrate to form a tantalum oxide layer on one or more surfaces of the substrate; wherein Ta(OR 1 ) x (O—R 2 —OR 3 ) y is selected from the group consisting of Ta(OEt) 4 (OCH 2 CH 2 O i Pr), Ta(OMe) 4 (OCH 2 CH 2 O i Pr), and combinations thereof, wherein Me=methyl, Et=ethyl, and i Pr=isopropyl; wherein providing the vapor comprising the one or more precursor compounds and directing the one or more precursor compounds and the one or more reaction gases is accomplished using an atomic layer deposition process comprising a plurality of deposition cycles.
Claim 3
Dependent Claim
21 words
The method of claim 1 wherein the tantalum oxide layer has a thickness of about 50 Å to about 150 Å.
Claim 4
Dependent Claim
25 words
The method of claim 1 wherein the reaction gas comprises oxygen, water vapor, ozone, alcohol vapor, nitrogen oxides, sulfur oxides, hydrogen peroxide, or mixtures thereof.
Claim 5
Dependent Claim
15 words
The method of claim 1 wherein the reaction gas comprises a vapor of an alcohol.
Claim 6
Dependent Claim
19 words
The method of claim 1 wherein the temperature of the substrate is about 25° C to about 400° C.
Claim 7
Dependent Claim
25 words
The method of claim 1 wherein the substrate is in a deposition chamber having a pressure of about 10 4 torr to about 1 torr.
Claim 8
Dependent Claim
25 words
The method of claim 1 wherein the one or more precursor compounds of Formula I are vaporized in the presence of an inert carrier gas.
Claim 9
Dependent Claim
23 words
The method of claim 7 wherein the inert carrier gas is selected from the group consisting of nitrogen, helium, argon, and mixtures thereof.
Claim 10
Dependent Claim
22 words
The method of claim 1 wherein one or more of the precursor compounds of Formula I are combined in a precursor composition.
Claim 11
Dependent Claim
23 words
The method of claim 1 wherein the one or more precursor compounds of Formula I are dissolved in one or more organic solvents.
Claim 12
Independent Claim
118 words
A method of forming a tantalum oxide layer on a substrate, the method comprising: providing a substrate; providing a vapor comprising one or more precursor compounds selected from the group consisting of Ta(OEt) 4 (OCH 2 CH 2 O i Pr), Ta(OMe) 4 (OMe) 4 (OCH 2 CH 2 O l Pr), and combinations thereof, wherein Me=methyl, Et=ethyl, and i Pr=isopropyl; and directing the one or more vaporized precursor compounds to the substrate to form a tantalum oxide layer on or more surfaces of the substrate; wherein providing a vapor comprising the one or more precursor compounds and directing the one more precursor compound is accomplished using an atomic layer deposition process comprising a plurality of deposition cycles.
Claim 13
Independent Claim
118 words
A method of forming a tantalum oxide layer on a substrate, the method comprising: providing a substrate; providing a vapor comprising one or more precursor compounds selected from the group consisting of Ta(OEt) 4 (OCH 2 CH 2 O i Pr), Ta(OMe) 4 (OMe) 4 (OCH 2 CH 2 O l Pr), and combinations thereof, wherein Me=methyl, Et=ethyl, and i Pr=isopropyl; and directing the one or more vaporized precursor compounds to the substrate to form a tantalum oxide layer on or more surfaces of the substrate; wherein providing a vapor comprising the one or more precursor compounds and directing the one more precursor compound is accomplished using an atomic layer deposition process comprising a plurality of deposition cycles.
Claim 14
Dependent Claim
22 words
The method of claim 11 wherein the one or more precusor compounds are vaporized in the presence of an inert carrier gas.
Claim 15
Dependent Claim
23 words
The method of claim 12 wherein the inert carrier gas is selected from the group consisting of nitrogen, helium, argon, and mixtures thereof.
Claim 16
Dependent Claim
19 words
The method of claim 11 wherein one or more of the precursor compounds are combined in a precursor composition.
Claim 17
Dependent Claim
20 words
The method of claim 11 wherein the one or more precursor compounds are dissolved in one or more organic solvents.
Claim 18
Dependent Claim
17 words
The method of claim 11 wherein the tantalum oxide layer has a thickness of about 50 Å.
Claim 19
Dependent Claim
32 words
The method of claim 11 wherein providing a vapor comprising the one or more prcursor compunds and directing the one or more precursor compounds is accomplished using a chemical vapor deposition process.
Claim 20
Dependent Claim
19 words
The method of claim 17 wherein the temperature of the substrate is about 100° C to about 600° C.
Claim 21
Dependent Claim
23 words
The method of claim 17 wherein the substrate is in a deposition chamber having a pressure of about 0.1 torr about 10 torr.
Claim 22
Dependent Claim
19 words
A method of claim 11 wherein the temperature of the substrate is about 25° C to about 400° C.
Claim 23
Dependent Claim
25 words
The method of claim 11 wherein the substrate is in a deposition chamber having a pressure of about 10 -4 torr to about 1 torr.
Claim 24
Independent Claim
208 words
A method of forming a tantalum oxide layer on a substrate, the method comprising: providing a substrate; providing a vapor comprising one or more precursor compounds of the formula Ta(OR 1 ) x(O-R 2 -OR 3 ), wherein each R is an organic group, x=3-4, and y=I-2; providing a vapor comprising one or more metal-containing precursor compounds different than Ta(OR 1)x(O-R 2 -OR 3 ) y ; and directing the one or more vaporized precursor compounds of Formula I and the one or more other vaporized precursor compounds to the substrate to form a tantalum oxide layer on one or more surfaces of the substrate; wherein Ta(OR 1 ) x (O-R 2 -OR 3 ) y is selected from the group consisting of Ta(OEt) 4 (OCH 2 CH 2 O i Pr), Ta(OMe) 4 (OCH 2 CH 2 O i Pr), and combinations thereof, wherein Me=methyl, Et=ethyl, and i Pr=isopropyl; wherein providing the vapor comprising the one or more precursor compounds of Formula I and the vapor comprising the one or more other precursor compounds; and directing the one or more precursor compounds of Formula I and the one or more other precursor compounds is accomplished using an atomic layer deposition process comprising a plurality of deposition cycles.
Claim 25
Independent Claim
208 words
A method of forming a tantalum oxide layer on a substrate, the method comprising: providing a substrate; providing a vapor comprising one or more precursor compounds of the formula Ta(OR 1 ) x(O-R 2 -OR 3 ), wherein each R is an organic group, x=3-4, and y=I-2; providing a vapor comprising one or more metal-containing precursor compounds different than Ta(OR 1)x(O-R 2 -OR 3 ) y ; and directing the one or more vaporized precursor compounds of Formula I and the one or more other vaporized precursor compounds to the substrate to form a tantalum oxide layer on one or more surfaces of the substrate; wherein Ta(OR 1 ) x (O-R 2 -OR 3 ) y is selected from the group consisting of Ta(OEt) 4 (OCH 2 CH 2 O i Pr), Ta(OMe) 4 (OCH 2 CH 2 O i Pr), and combinations thereof, wherein Me=methyl, Et=ethyl, and i Pr=isopropyl; wherein providing the vapor comprising the one or more precursor compounds of Formula I and the vapor comprising the one or more other precursor compounds; and directing the one or more precursor compounds of Formula I and the one or more other precursor compounds is accomplished using an atomic layer deposition process comprising a plurality of deposition cycles.
Claim 26
Dependent Claim
33 words
The method of claim 22 wherein the one or more precursor compounds of Formula I and the one or more other precursor compounds are vaporized in the presence of an inert carrier gas.
Claim 27
Dependent Claim
23 words
The method of claim 23 wherein the inert carrier gas is selected from the group consisting of nitrogen, helium, argon, and mixtures thereof.
Claim 28
Independent Claim
29 words
The method of 22 wherein one or more of the precursor compounds of Formula I and the one or more other precursor compounds are combined in a precursor composition.
Claim 29
Independent Claim
29 words
The method of 22 wherein one or more of the precursor compounds of Formula I and the one or more other precursor compounds are combined in a precursor composition.
Claim 30
Dependent Claim
31 words
The method of claim 22 wherein the one or more precursor compounds of Formula I and the one or more other precursor compounds are dissolved in one or more organic solvents.
Claim 31
Dependent Claim
21 words
The method of claim 22 wherein the tantalum oxide layer has a thickness of about 50 Å to about 150 Å.
Claim 32
Dependent Claim
19 words
The method of claim 22 wherein the temperature of the substrate is about 25° C to about 400° C.
Claim 33
Dependent Claim
23 words
The method of claim 22 wherein the substrate is in a deposition chamber having a pressure of about 10-4torr to about 1 torr.
Claim 34
Independent Claim
99 words
The method of forming a tantalum oxide layer on a substrates, the method comprising: providing a substrate; providing a vapor comprising one or more precursor compounds selected from the group consisting of Ta(OEt) 4 (OCH 2 CH 2 O i Pr), Ta(OMe) 4 (OCH 2 CH 2 O i Pr), Ta(OMe) 4 (OCH 2 CH 2 O i Pr), and combinations therof, wherein Me=methyl, Et=ethyl, and i Pr =isopropyl; wherein Me =methyl, Et =ethyl, and i Pr =isopropyl; directing the one or more sources of a reaction gas; and gases to the substrate to form a tantalum oxide layer
Claim 35
Independent Claim
99 words
The method of forming a tantalum oxide layer on a substrates, the method comprising: providing a substrate; providing a vapor comprising one or more precursor compounds selected from the group consisting of Ta(OEt) 4 (OCH 2 CH 2 O i Pr), Ta(OMe) 4 (OCH 2 CH 2 O i Pr), Ta(OMe) 4 (OCH 2 CH 2 O i Pr), and combinations therof, wherein Me=methyl, Et=ethyl, and i Pr =isopropyl; wherein Me =methyl, Et =ethyl, and i Pr =isopropyl; directing the one or more sources of a reaction gas; and gases to the substrate to form a tantalum oxide layer
Claim 36
Independent Claim
215 words
A method of forming a tantalum oxide layer on a substrate, the method comprising: providing a substrate; providing a vapor comprising one or more precursor compounds of the formula Ta(OR 1 ) x (O—R 2 —OR 3 ) y (Formula I), wherein each R is an organic group, x=3-4, and y=1-2; providing a vapor comprising one or more metal-containing precursor compounds different than Ta(OR 1 ) x (O—R 2 —OR 3 ) y ; and directing the one or more vaporized precursor compounds of Formula I and the one or more other vaporized precursor compounds to the substrate to form a tantalum oxide layer on one or more surfaces of the substrate. wherein Ta(OR 1 ) x (O—R 2 —OR 3 ) y is selected from the group consisting of Ta(OEt) 4 (OCH 2 CH 2 O i Pr), Ta(OMe) 4 (OCH 2 CH 2 O i Pr), and combinations thereof, wherein Me=methyl, Et=ethyl, and i Pr=isopropyl; wherein providing the vapor comprising the one or more precursor compounds of Formula I and the vapor comprising the one or more other precursor compounds; and directing the one or more precursor compounds of Formula I and the one or more other precursor compounds is accomplished using an atomic layer deposition process comprising a plurality of deposition cycles.
Claim 37
Independent Claim
215 words
A method of forming a tantalum oxide layer on a substrate, the method comprising: providing a substrate; providing a vapor comprising one or more precursor compounds of the formula Ta(OR 1 ) x (O—R 2 —OR 3 ) y (Formula I), wherein each R is an organic group, x=3-4, and y=1-2; providing a vapor comprising one or more metal-containing precursor compounds different than Ta(OR 1 ) x (O—R 2 —OR 3 ) y ; and directing the one or more vaporized precursor compounds of Formula I and the one or more other vaporized precursor compounds to the substrate to form a tantalum oxide layer on one or more surfaces of the substrate. wherein Ta(OR 1 ) x (O—R 2 —OR 3 ) y is selected from the group consisting of Ta(OEt) 4 (OCH 2 CH 2 O i Pr), Ta(OMe) 4 (OCH 2 CH 2 O i Pr), and combinations thereof, wherein Me=methyl, Et=ethyl, and i Pr=isopropyl; wherein providing the vapor comprising the one or more precursor compounds of Formula I and the vapor comprising the one or more other precursor compounds; and directing the one or more precursor compounds of Formula I and the one or more other precursor compounds is accomplished using an atomic layer deposition process comprising a plurality of deposition cycles.
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