US6200847B1
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of manufacturing capacitor of semiconductor device
Assignee: Oki Electric Industry Co Ltd
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Filing: 1997-12-03
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Granted: 2001-03-13
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Expires: 2017-12-03
Abstract
Abstract A method of manufacturing a capacitor of a semiconductor device, according to the present invention comprises the steps of heat-treating a Ta 2 O 5 film formed on a metal or metal oxide electrode corresponding to a lower electrode of the capacitor at a temperature lower than a temperature at which the Ta 2 O 5 film is crystallized, and thereafter heat-treating the Ta 2 O 5 film at a temperature higher than or equal to the crystallizing temperature of the Ta 2 O 5 film.
Inventors
- 👤 Koichi Kishiro
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 01:16
CPC Classifications
H; H10; H10D; H10D1/00; H10D1/60; H10D1/68; H10P; H10P14/00; H10P14/60; H10P14/65; H10P14/6516; H10P14/6529; H10B; H10B12/00; H10B12/01; H10B12/02; H10B12/03; H10B12/033; H10B12/0335; H10P14/6544; H10P14/69; H10P14/692; H10P14/6938; H10P14/6939; H10P14/69393; H10P95/00
Claims Analysis
Total Claims: 18
Claim 1
Independent Claim
125 words
A method of manufacturing a capacitor of a semiconductor device, comprising: forming a metal or metal oxide electrode over a semiconductor substrate; forming a Ta 2 O 5 film on the metal or metal oxide electrode; heat-treating the Ta 2 O 5 film at a temperature lower than a crystallizing temperature of the Ta 2 O 5 film to compensate for oxygen deficiencies and remove impurities; and heat-treating the Ta 2 O 5 film having been subjected to said heat-treating at the temperature lower than the crystallizing temperature of the Ta 2 O 5 film at a temperature higher than or equal to the crystallizing temperature of the Ta 2 O 5 film after said heat-treating step to crystallize the Ta 2 O 5 film.
Claim 2
Independent Claim
125 words
A method of manufacturing a capacitor of a semiconductor device, comprising: forming a metal or metal oxide electrode over a semiconductor substrate; forming a Ta 2 O 5 film on the metal or metal oxide electrode; heat-treating the Ta 2 O 5 film at a temperature lower than a crystallizing temperature of the Ta 2 O 5 film to compensate for oxygen deficiencies and remove impurities; and heat-treating the Ta 2 O 5 film having been subjected to said heat-treating at the temperature lower than the crystallizing temperature of the Ta 2 O 5 film at a temperature higher than or equal to the crystallizing temperature of the Ta 2 O 5 film after said heat-treating step to crystallize the Ta 2 O 5 film.
Claim 3
Dependent Claim
38 words
A method according to claim 1 , wherein said heat-treating the Ta 2 O 5 film at the temperature lower than the crystallizing temperature of the Ta 2 O 5 film is carried out in an oxidative atmosphere.
Claim 4
Dependent Claim
39 words
A method according to claim 2 , wherein said heat-treating the Ta 2 O 5 film at the temperature higher than or equal to the crystallizing temperature of the Ta 2 O 5 film is a rapid heat-treating step.
Claim 5
Dependent Claim
56 words
A method according to claim 1 , wherein said heat-treating the Ta 2 O 5 film at the temperature higher than or equal to the crystallizing temperature of the Ta 2 O 5 film is carried out through a diffusion furnace so as to obtain the Ta 2 O 5 film having less crystal grain boundary.
Claim 6
Dependent Claim
44 words
A method according to claim 1 , wherein said heat-treating the Ta 2 O 5 film at the temperature lower than the crystallizing temperature of the Ta 2 O 5 film is carried out in an atmosphere of O 3 or N 2 O.
Claim 7
Dependent Claim
44 words
A method according to claim 1 , wherein said heat-treating the Ta 2 O 5 film at the temperature lower than the crystallizing temperature of the Ta 2 O 5 film is carried out in an oxidative atmosphere activated by light or plasma excitation.
Claim 8
Dependent Claim
25 words
A method according to claim 1 , wherein said heat treating at the temperature lower than the crystallizing temperature does not include rapid thermal annealing.
Claim 9
Dependent Claim
30 words
A method according to claim 1 , wherein said heat treating at the temperature lower than the crystallizing temperature produces substantially no crystallization of the Ta 2 O 5 .
Claim 10
Independent Claim
117 words
A method of manufacturing a capacitor of a semiconductor device, comprising: forming a metal or metal oxide electrode over a semiconductor substrate; forming a Ta 2 O 5 film on the metal or metal oxide electrode; heat-treating the Ta 2 O 5 film at a temperature lower than a crystallizing temperature of the Ta 2 O 5 film; and heat-treating the Ta 2 O 5 film having been subjected to said heat-treating at the temperature lower than the crystallizing temperature of the Ta 2 O 5 film at a temperature higher than or equal to the crystallizing temperature of the Ta 2 O 5 film after said heat-treating step to crystallize the Ta 2 O 5 film.
Claim 11
Independent Claim
117 words
A method of manufacturing a capacitor of a semiconductor device, comprising: forming a metal or metal oxide electrode over a semiconductor substrate; forming a Ta 2 O 5 film on the metal or metal oxide electrode; heat-treating the Ta 2 O 5 film at a temperature lower than a crystallizing temperature of the Ta 2 O 5 film; and heat-treating the Ta 2 O 5 film having been subjected to said heat-treating at the temperature lower than the crystallizing temperature of the Ta 2 O 5 film at a temperature higher than or equal to the crystallizing temperature of the Ta 2 O 5 film after said heat-treating step to crystallize the Ta 2 O 5 film.
Claim 12
Dependent Claim
38 words
A method according to claim 9 , wherein said heat-treating the Ta 2 O 5 film at the temperature lower than the crystallizing temperature of the Ta 2 O 5 film is carried out in an oxidative atmosphere.
Claim 13
Dependent Claim
39 words
A method according to claim 9 , wherein said heat-treating the Ta 2 O 5 film at the temperature higher than or equal to the crystallizing temperature of the Ta 2 O 5 film is a rapid heat-treating step.
Claim 14
Dependent Claim
56 words
A method according to claim 9 , wherein said heat-treating the Ta 2 O 5 film at the temperature higher than or equal to the crystallizing temperature of the Ta 2 O 5 film is carried out through a diffusion furnace so as to obtain the Ta 2 O 5 film having less crystal grain boundary.
Claim 15
Dependent Claim
44 words
A method according to claim 9 , wherein said heat-treating the Ta 2 O 5 film at the temperature lower than the crystallizing temperature of the Ta 2 O 5 film is carried out in an atmosphere of O 3 or N 2 O.
Claim 16
Dependent Claim
44 words
A method according to claim 9 , wherein said heat-treating the Ta 2 O 5 film at the temperature lower than the crystallizing temperature of the Ta 2 O 5 film is carried out in an oxidative atmosphere activated by light or plasma excitation.
Claim 17
Dependent Claim
25 words
A method according to claim 9 , wherein said heat treating at the temperature lower than the crystallizing temperature does not include rapid thermal annealing.
Claim 18
Dependent Claim
30 words
A method according to claim 9 , wherein said heat treating at the temperature lower than the crystallizing temperature produces substantially no crystallization of the Ta 2 O 5 film.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2004-03-12 | 2004-09-11 | 2005-03-13 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2008-03-12 | 2008-09-11 | 2009-03-13 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2012-03-12 | 2012-09-11 | 2013-03-13 | $7700.00 | Window Closed / Lapsed |