US20030143328A1 — Apparatus and method for plasma assisted depositi…

Claim 1

Independent Claim 56 words

1 . A substrate processing chamber, comprising: a top shower plate; a bottom shower plate; an insulator disposed between the top shower plate and the bottom shower plate; a power source coupled to the top shower plate; and a controller adapted to control the power source to provide pulses of power to the top shower plate.

Claim 2

Dependent Claim 56 words

1 . A substrate processing chamber, comprising: a top shower plate; a bottom shower plate; an insulator disposed between the top shower plate and the bottom shower plate; a power source coupled to the top shower plate; and a controller adapted to control the power source to provide pulses of power to the top shower plate.

Claim 3

Dependent Claim 52 words

2 . The substrate processing chamber of claim 1 , wherein the bottom shower plate comprises columns having column holes in communication with a top surface and a bottom surface of the bottom shower plate and comprises grooves having groove holes in communication with the bottom surface of the bottom shower plate.

Claim 4

Dependent Claim 32 words

3 . The substrate processing chamber of claim 2 , wherein the top shower plate comprises holes in communication with a top surface and a bottom surface of the top shower plate.

Claim 5

Dependent Claim 69 words

4 . The substrate processing chamber of claim 3 , further comprising: a gas box having a first gas channel; a gas conduit coupled to the first gas channel of the gas box, disposed through an aperture of the top shower plate, and coupled to an aperture of the bottom shower plate, the aperture of the bottom shower plate in communication with the grooves of the bottom shower plate.

Claim 6

Dependent Claim 39 words

5 . The substrate processing chamber of claim 4 , wherein the first gas channel is adapted to deliver one or more gases from the gas box through the gas conduit to the grooves of the bottom shower plate.

Claim 7

Dependent Claim 18 words

6 . The substrate processing chamber of claim 4 , wherein the gas conduit comprises an insulating material.

Claim 8

Dependent Claim 33 words

7 . The substrate processing chamber of claim 4 , wherein the aperture of the bottom shower plate is located at a central portion on a top surface of the bottom shower plate.

Claim 9

Dependent Claim 44 words

8 . The substrate processing chamber of claim 4 , wherein the gas box further comprises a second gas channel, the second gas channel adapted to deliver one or more gases from the gas box to the top surface of the top shower plate.

Claim 10

Dependent Claim 43 words

9 . The substrate processing chamber of claim 8 , wherein the first gas channel is located at a central portion of the gas box and wherein the second gas channel comprises one or more outer gas channels adjacent the first gas channel.

Claim 11

Dependent Claim 24 words

10 . The substrate processing chamber of claim 8 , wherein the first gas channel is coupled to a refractory metal containing gas source.

Claim 12

Dependent Claim 23 words

11 . The substrate processing chamber of claim 10 , wherein the refractory metal containing gas source is a titanium containing gas source.

Claim 13

Dependent Claim 26 words

12 . The substrate processing chamber of claim 10 , further comprising a valve coupling the refractory metal containing gas source and the first gas channel.

Claim 14

Dependent Claim 36 words

13 . The substrate processing chamber of claim 12 , wherein the valve is adapted to selectively provide pulses or a continuous flow of a refractory metal containing compound from the refractory metal containing gas source.

Claim 15

Dependent Claim 23 words

14 . The substrate processing chamber of claim 8 , wherein the second gas channel is coupled to a hydrogen containing gas source.

Claim 16

Dependent Claim 25 words

15 . The substrate processing chamber of claim 14 , further comprising a valve coupling the hydrogen containing gas source and the second gas channel.

Claim 17

Dependent Claim 34 words

16 . The substrate processing chamber of claim 15 , wherein the valve is adapted to selectively provide pulses or a continuous flow of a hydrogen containing gas from the hydrogen containing gas source.

Claim 18

Dependent Claim 23 words

17 . The substrate processing chamber of claim 8 , wherein the second gas channel is coupled to a hydrogen/nitrogen containing gas source.

Claim 19

Dependent Claim 36 words

18 . The substrate processing chamber of claim 17 , wherein the hydrogen/nitrogen containing gas source is adapted to selectively provide a hydrogen/nitrogen containing gas comprising a hydrogen gas to a nitrogen gas in varying ratios.

Claim 20

Dependent Claim 25 words

19 . The substrate processing chamber of claim 17 , further comprising a valve coupling the hydrogen/nitrogen containing gas source and the second gas channel.

Claim 21

Dependent Claim 34 words

20 . The substrate processing chamber of claim 19 , wherein the valve is adapted to selectively provide pulses or a continuous flow of a hydrogen/nitrogen containing gas from the hydrogen/nitrogen containing gas source.

Claim 22

Dependent Claim 36 words

21 . The substrate processing chamber of claim 1 , wherein pulses of power to the top shower plate is adapted to generate pulses of plasma between the top shower plate and the bottom shower plate.

Claim 23

Dependent Claim 108 words

22 . A gas distribution system, comprising: a top shower plate coupled to a power source; a bottom shower plate coupled through a switch to the power source and a ground; an insulator disposed between the top shower plate and the bottom shower plate; a substrate support; and a controller adapted to control the power source and the switch to selectively provide power to the top shower plate and to ground the bottom shower plate to generate a plasma therebetween and to provide power to the top shower plate and to the bottom shower plate to generate a plasma between the bottom shower plate and the substrate support.

Claim 24

Dependent Claim 108 words

22 . A gas distribution system, comprising: a top shower plate coupled to a power source; a bottom shower plate coupled through a switch to the power source and a ground; an insulator disposed between the top shower plate and the bottom shower plate; a substrate support; and a controller adapted to control the power source and the switch to selectively provide power to the top shower plate and to ground the bottom shower plate to generate a plasma therebetween and to provide power to the top shower plate and to the bottom shower plate to generate a plasma between the bottom shower plate and the substrate support.

Claim 25

Dependent Claim 25 words

23 . The substrate processing chamber of claim 22 , wherein the controller is adapted to control the power source to provide pulses of power.

Claim 26

Dependent Claim 27 words

24 . The substrate processing chamber of claim 22 , wherein the controller is adapted to control the power source to provide a continuous flow of power.

Claim 27

Dependent Claim 32 words

25 . The substrate processing chamber of claim 22 , wherein the controller is adapted to control the power source to selectively provide pulses of power and a continuous flow of power.

Claim 28

Dependent Claim 52 words

26 . The substrate processing chamber of claim 22 , further comprising: a gas box having a first gas channel; a gas conduit coupled to the first gas channel of the gas box, disposed through an aperture of the top shower plate, and coupled to an aperture of the bottom shower plate.

Claim 29

Dependent Claim 44 words

27 . The substrate processing chamber of claim 26 , wherein the gas box further comprises a second gas channel, the second gas channel adapted to deliver one or more gases from the gas box to the top surface of the top shower plate.

Claim 30

Dependent Claim 98 words

28 . A substrate processing chamber, comprising: a top shower plate; a bottom shower plate; an insulator disposed between the top shower plate and the bottom shower plate; a first pathway and a second pathway formed through the top shower plate and the bottom shower plate; a power source coupled to the top shower plate; and a gas box having a first gas outlet in communication with the first pathway and a second outlet in communication with the second pathway, the first gas outlet and the second gas outlet proximate a central portion of the top shower plate.

Claim 31

Dependent Claim 98 words

28 . A substrate processing chamber, comprising: a top shower plate; a bottom shower plate; an insulator disposed between the top shower plate and the bottom shower plate; a first pathway and a second pathway formed through the top shower plate and the bottom shower plate; a power source coupled to the top shower plate; and a gas box having a first gas outlet in communication with the first pathway and a second outlet in communication with the second pathway, the first gas outlet and the second gas outlet proximate a central portion of the top shower plate.

Claim 32

Dependent Claim 118 words

29 . The substrate processing chamber of claim 28 , further comprising: a first valve coupling the first gas outlet to a refractory metal containing gas source and adapted to deliver a refractory metal containing compound from the refractory metal containing gas source through the first pathway through the top shower plate and the bottom shower plate; and a second valve coupling the second gas outlet to a second gas source and adapted to deliver a continuous flow of a second gas from the second gas source through the second pathway through the top shower plate and the bottom shower plate, the second gas selected from the group consisting of a hydrogen containing gas and hydrogen/nitrogen containing gas.

Claim 33

Dependent Claim 29 words

30 . The substrate processing chamber of claim 29 , wherein the first valve is adapted to selectively provide pulses or a continuous flow of a refractory metal compound.

Claim 34

Dependent Claim 31 words

31 . The substrate processing chamber of claim 29 , wherein the power source is adapted to selectively provide pulses or a continuous flow of power to the top shower plate.

Claim 35

Dependent Claim 35 words

32 . The substrate processing chamber of claim 29 , wherein the second gas source is adapted to selectively provide a hydrogen/nitrogen containing gas comprising a hydrogen gas to a nitrogen gas in varying ratios.

Claim 36

Dependent Claim 28 words

33 . The substrate processing chamber of claim 29 , further comprising a switch device coupling the power source and a grounding device to the bottom shower plate.

Claim 37

Dependent Claim 31 words

34 . The substrate processing chamber of claim 33 , wherein the power source is adapted to selectively provide pulses or a continuous flow of power to the bottom shower plate.

Claim 38

Dependent Claim 88 words

35 . A method of depositing a layer over a substrate structure of a substrate comprising providing at least one cycle of gases, the at least one cycle comprising: providing a continuous flow of a gas selected from the group consisting of a hydrogen containing gas and a hydrogen/nitrogen containing gas; providing a pulse of a refractory metal containing compound during the continuous flow of the hydrogen containing gas; and providing a pulse of a plasma power to generate a plasma from the continuous flow of the gas.

Claim 39

Dependent Claim 88 words

35 . A method of depositing a layer over a substrate structure of a substrate comprising providing at least one cycle of gases, the at least one cycle comprising: providing a continuous flow of a gas selected from the group consisting of a hydrogen containing gas and a hydrogen/nitrogen containing gas; providing a pulse of a refractory metal containing compound during the continuous flow of the hydrogen containing gas; and providing a pulse of a plasma power to generate a plasma from the continuous flow of the gas.

Claim 40

Dependent Claim 36 words

36 . The method of claim 35 , wherein the continuous flow of the gas acts as a purge gas between the pulse of the refractory metal containing compound and the pulse of the plasma power.

Claim 41

Dependent Claim 16 words

37 . The method of claim 35 , wherein the gas further comprises a carrier gas.

Claim 42

Dependent Claim 19 words

38 . The method of claim 35 , wherein the refractory metal containing compound comprises a titanium containing gas.

Claim 43

Dependent Claim 19 words

39 . The method of claim 35 , wherein the refractory metal containing compound further comprises a carrier gas.

Claim 44

Dependent Claim 60 words

40 . The method of claim 35 , wherein providing the pulse of the plasma power comprises providing the plasma power to a top shower plate to generate an electric field between the top shower plate and a bottom shower plate, wherein the continuous flow of the gas is provided between the top shower plate and the bottom shower plate.

Claim 45

Dependent Claim 29 words

41 . The method of claim 35 , wherein the at least one cycle, comprises heating the substrate to a substrate support temperature of about 500° C. or less.

Claim 46

Dependent Claim 15 words

42 . The method of claim 35 , wherein the layer comprises a titanium layer.

Claim 47

Dependent Claim 16 words

43 . The method of claim 35 , wherein the layer comprises a titanium nitride layer.

Claim 48

Dependent Claim 19 words

44 . The method of claim 35 , wherein the layer comprises a titanium and a titanium nitride layer.

Claim 49

Dependent Claim 32 words

45 . The method of claim 35 , wherein the continuous flow of the gas and the pulse of the refractory metal are provided through separate paths through the gas distribution system.

Claim 50

Dependent Claim 185 words

46 . A method of processing a substrate in a single chamber, comprising: depositing a first layer, wherein depositing the first layer comprises: (i) selectively providing a flow of a first gas selected from the group consisting of a continuous flow of a hydrogen containing gas and a continuous flow of a hydrogen/nitrogen containing gas; (ii) selectively providing a flow of a second gas selected from the group consisting of pulses of a refractory metal containing compound and a continuous flow of a refractory metal containing compound; (iii) selectively providing a flow of a plasma power selected from the group consisting of pulses of a plasma power to a top shower plate, a continuous flow of plasma power to a top shower plate, pulses of a plasma power to a top shower plate and a bottom shower plate, continuous flow of plasma power to a top shower plate and a bottom shower plate, and no plasma power to the chamber; and depositing a second layer over the first layer, wherein depositing the second layer comprises changing one or more of the parameters (i) through (iii)

Claim 51

Dependent Claim 185 words

46 . A method of processing a substrate in a single chamber, comprising: depositing a first layer, wherein depositing the first layer comprises: (i) selectively providing a flow of a first gas selected from the group consisting of a continuous flow of a hydrogen containing gas and a continuous flow of a hydrogen/nitrogen containing gas; (ii) selectively providing a flow of a second gas selected from the group consisting of pulses of a refractory metal containing compound and a continuous flow of a refractory metal containing compound; (iii) selectively providing a flow of a plasma power selected from the group consisting of pulses of a plasma power to a top shower plate, a continuous flow of plasma power to a top shower plate, pulses of a plasma power to a top shower plate and a bottom shower plate, continuous flow of plasma power to a top shower plate and a bottom shower plate, and no plasma power to the chamber; and depositing a second layer over the first layer, wherein depositing the second layer comprises changing one or more of the parameters (i) through (iii)

Claim 52

Dependent Claim 26 words

47 . The method of claim 46 , wherein the first gas and the second gas are provided through separate paths through a gas distribution system.

Claim 53

Dependent Claim 44 words

48 . The method of claim 46 , wherein the pulses of a refractory metal containing compound comprises pulses of a titanium containing compound and wherein the continuous flow of a refractory metal containing compound comprises a continuous flow of a titanium containing compound.

Claim 54

Dependent Claim 31 words

49 . The method of claim 46 , wherein depositing a first layer comprises providing pulses of a refractory metal and providing pulses of plasma power to a top shower plate.

Claim 55

Dependent Claim 25 words

50 . The method of claim 49 , wherein the pulses of the refractory metal and the pulses of the plasma power are provided separately.

Claim 56

Dependent Claim 58 words

51 . The method of claim 49 , wherein one or more of the pulses of the refractory metal and one or more of the pulses of the plasma power are provided together and one or more of the pulses of the refractory metal and one or more of the pulses of the plasma power are provided separately.

Claim 57

Dependent Claim 155 words

52 . The method of claim 49 , wherein depositing a second layer comprises: (i) selectively providing a second flow of a first gas selected from the group consisting of a continuous flow of a hydrogen containing gas and a continuous flow of a hydrogen/nitrogen containing gas; (ii) selectively providing a second flow of a second gas selected from the group consisting of pulses of a refractory metal containing compound and a continuous flow of a refractory metal containing compound; (iii) selectively providing a second flow of a plasma power selected from the group consisting of pulses of a plasma power to a top shower plate, a continuous flow of plasma power to a top shower plate, pulses of a plasma power to a top shower plate and a bottom shower plate, continuous flow of plasma power to a top shower plate and a bottom shower plate, and no plasma power to the chamber; and

Claim 58

Dependent Claim 185 words

53 . A method of processing a substrate in a single chamber comprising: selectively performing a first process selected from the group consisting of cyclical layer deposition of a refractory metal layer, combined cyclical layer deposition and plasma-enhanced chemical vapor deposition of a refractory metal layer, cyclical layer deposition of a refractory metal nitride layer, combined cyclical layer deposition and plasma-enhanced chemical vapor deposition of a refractory metal nitride layer, plasma-enhanced chemical vapor deposition of a refractory metal layer, plasma-enhanced chemical vapor deposition of a refractory metal nitride layer, and chemical vapor deposition of a refractory metal nitride layer; and selectively performing a second process selected from the group consisting of cyclical layer deposition of a refractory metal layer, combined cyclical layer deposition and plasma-enhanced chemical vapor deposition of a refractory metal layer, cyclical deposition of a refractory metal nitride layer, combined cyclical layer deposition and plasma-enhanced chemical vapor deposition of a refractory metal nitride layer, plasma-enhanced chemical vapor deposition of a refractory metal layer, plasma-enhanced chemical vapor deposition of a refractory metal nitride layer, and chemical vapor deposition of a refractory metal nitride layer.

Claim 59

Dependent Claim 185 words

53 . A method of processing a substrate in a single chamber comprising: selectively performing a first process selected from the group consisting of cyclical layer deposition of a refractory metal layer, combined cyclical layer deposition and plasma-enhanced chemical vapor deposition of a refractory metal layer, cyclical layer deposition of a refractory metal nitride layer, combined cyclical layer deposition and plasma-enhanced chemical vapor deposition of a refractory metal nitride layer, plasma-enhanced chemical vapor deposition of a refractory metal layer, plasma-enhanced chemical vapor deposition of a refractory metal nitride layer, and chemical vapor deposition of a refractory metal nitride layer; and selectively performing a second process selected from the group consisting of cyclical layer deposition of a refractory metal layer, combined cyclical layer deposition and plasma-enhanced chemical vapor deposition of a refractory metal layer, cyclical deposition of a refractory metal nitride layer, combined cyclical layer deposition and plasma-enhanced chemical vapor deposition of a refractory metal nitride layer, plasma-enhanced chemical vapor deposition of a refractory metal layer, plasma-enhanced chemical vapor deposition of a refractory metal nitride layer, and chemical vapor deposition of a refractory metal nitride layer.

Claim 60

Dependent Claim 67 words

54 . The method of claim 53 , wherein performing a first process is selected from the group consisting of cyclical layer deposition of a refractory metal layer, combined cyclical layer deposition and plasma-enhanced chemical vapor deposition of a refractory metal layer, cyclical layer deposition of a refractory metal nitride layer, and combined cyclical layer deposition and plasma-enhanced chemical vapor deposition of a refractory metal nitride layer.

Claim 61

Dependent Claim 172 words

55 . A method of processing a substrate in a single chamber comprising: selectively performing a first process selected from the group consisting of cyclical layer deposition of a titanium layer, combined cyclical layer deposition and plasma-enhanced chemical vapor deposition of a titanium layer, cyclical layer deposition of a titanium nitride layer, combined cyclical layer deposition and plasma-enhanced chemical vapor deposition of a titanium nitride layer, plasma-enhanced chemical vapor deposition of a titanium layer, plasma-enhanced chemical vapor deposition of a titanium nitride layer, and chemical vapor deposition of a titanium nitride layer; and selectively performing a second process selected from the group consisting of cyclical layer deposition of a titanium layer, combined cyclical layer deposition and plasma-enhanced chemical vapor deposition of a titanium layer, cyclical layer deposition of a titanium nitride layer, combined cyclical layer deposition and plasma-enhanced chemical vapor deposition of a titanium nitride layer, plasma-enhanced chemical vapor deposition of a titanium layer, plasma-enhanced chemical vapor deposition of a titanium nitride layer, and chemical vapor deposition of a titanium nitride layer.

Claim 62

Dependent Claim 172 words

55 . A method of processing a substrate in a single chamber comprising: selectively performing a first process selected from the group consisting of cyclical layer deposition of a titanium layer, combined cyclical layer deposition and plasma-enhanced chemical vapor deposition of a titanium layer, cyclical layer deposition of a titanium nitride layer, combined cyclical layer deposition and plasma-enhanced chemical vapor deposition of a titanium nitride layer, plasma-enhanced chemical vapor deposition of a titanium layer, plasma-enhanced chemical vapor deposition of a titanium nitride layer, and chemical vapor deposition of a titanium nitride layer; and selectively performing a second process selected from the group consisting of cyclical layer deposition of a titanium layer, combined cyclical layer deposition and plasma-enhanced chemical vapor deposition of a titanium layer, cyclical layer deposition of a titanium nitride layer, combined cyclical layer deposition and plasma-enhanced chemical vapor deposition of a titanium nitride layer, plasma-enhanced chemical vapor deposition of a titanium layer, plasma-enhanced chemical vapor deposition of a titanium nitride layer, and chemical vapor deposition of a titanium nitride layer.

Claim 63

Dependent Claim 63 words

56 . The method of claim 55 , wherein performing a first process is selected from the group consisting of cyclical layer deposition of a titanium layer, combined cyclical layer deposition and plasma-enhanced chemical vapor deposition of a titanium layer, cyclical layer deposition of a titanium nitride layer, and combined cyclical layer deposition and plasma-enhanced chemical vapor deposition of a titanium nitride layer.

Apparatus and method for plasma assisted deposition

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