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US6630201B2 Expired / Lapsed US ⏱️ 0.0 years remaining

Adsorption process for atomic layer deposition

Assignee: Novellus Systems Inc
•
Filing: 2001-10-24
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Granted: 2003-10-07
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Expires: 2021-10-24
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Abstract

Abstract A method for conducting an ALD process to deposit layers on a substrate which includes an electrostatic chuck (ESC) to retain the substrate. Electrode(s) in the chuck assembly are used to induce a voltage on the substrate to promote precursor adsorption on the substrate.

Inventors

  • 👤 Tony P. Chiang
  • 👤 Karl F. Leeser
  • 👤 Jeffrey A. Brown
  • 👤 Jason E. Babcoke

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-11-09 00:54
CPC Classifications
C; C23; C23C; C23C16/00; C23C16/44; C23C16/4412; C23C16/02; C23C16/0227; C23C16/4411; C23C16/448; C23C16/4486; C23C16/455; C23C16/45523; C23C16/45525; C23C16/45527; C23C16/45536; C23C16/45544; C23C16/45557; C23C16/45561; C23C16/45563; C23C16/45565; C23C16/4557; C23C16/458; C23C16/4582; C23C16/4583; C23C16/4586; C23C16/50; C23C16/515; H; H01; H01J; H01J37/00; H01J37/32; H01J37/32431; H01J37/3244; H01J37/32449; H01J37/32798; H01J37/32853; H01J37/32862; H10; H10P; H10P14/00; H10P14/40; H10P14/42; H10P14/43; H10P14/432; H10W; H10W20/00; H10W20/01; H10W20/031; H10W20/071; H10W20/081

Claims Analysis

Total Claims: 21
Claim 1
Independent Claim 79 words
A method for depositing a thin film onto a substrate comprising the acts of: providing a precursor in a process chamber, without creating a plasma in the chamber, for adsorption on a surface of said substrate in the chamber; inducing a voltage on the substrate; and using the induced voltage to promote adsorption of a single monolayer of the precursor on the surface of the substrate, such that the monolayer is formed without creating a plasma in the chamber.
Claim 2
Independent Claim 79 words
A method for depositing a thin film onto a substrate comprising the acts of: providing a precursor in a process chamber, without creating a plasma in the chamber, for adsorption on a surface of said substrate in the chamber; inducing a voltage on the substrate; and using the induced voltage to promote adsorption of a single monolayer of the precursor on the surface of the substrate, such that the monolayer is formed without creating a plasma in the chamber.
Claim 3
Dependent Claim 16 words
The method of claim 1 , wherein the induced voltage comprises a continuous DC bias voltage.
Claim 4
Dependent Claim 11 words
The method of claim 1 , wherein the adsorption comprises chemisorption.
Claim 5
Dependent Claim 17 words
The method of claim 1 , wherein the magnitude of the induced voltage is less than 50V.
Claim 6
Dependent Claim 22 words
The method of claim 1 , wherein the induced voltage is an opposite polarity from a charge of ligands in the precursor.
Claim 7
Dependent Claim 22 words
The method of claim 1 , wherein the precursor comprises t-butylimino tris(diethylamino)tantalum (TBTDET), and the polarity of the induced voltage is positive.
Claim 8
Dependent Claim 27 words
The method of claim 1 , wherein the precursor comprises (trimethylvinylsilyl)hexafluoroacetylacetonato copper I (Cupraselect®) or t-butylimino tris(diethylamino)tantalum (TBTDET), and the polarity of the induced voltage is negative.
Claim 9
Dependent Claim 50 words
The method of claim 1 , wherein the precursor comprises pentakis(diethylamido)tantalum (PDEAT), pentakis(ethylmethylamido)tantalum (PEMAT), tetrakis(diethylamino)titanium (TDEAT), tetrakis(dimethylamido)titanium (TDMAT), TaBr 5 , TaCl 5 , TiCl 4 , CuCl, W(CO) 6 , or WF 6 , and the polarity of the induced voltage is opposite to a charge of the precursor.
Claim 10
Dependent Claim 11 words
The method of claim 1 , wherein the adsorption comprises physisorption.
Claim 11
Dependent Claim 15 words
The method of claim 1 , wherein the induced voltage is less than 10 volts.
Claim 12
Dependent Claim 23 words
The method of claim 1 , wherein inducing the voltage comprises applying a DC reference voltage to an electrostatic chuck supporting the substrate.
Claim 13
Dependent Claim 25 words
The method of claim 11 , wherein the application of the DC reference voltage is exclusive of an application of RF power to the precursor.
Claim 14
Dependent Claim 35 words
The method of claim 1 , wherein the induced voltage imparts a moment on the precursor, the moment being sufficient to align the precursor on the surface of the substrate in a specified, uniform orientation.
Claim 15
Dependent Claim 19 words
The method of claim 13 , wherein the induced voltage is a minimum magnitude required to impart the moment.
Claim 16
Dependent Claim 31 words
The method of claim 1 , wherein inducing the voltage comprises application of a DC reference voltage to an electrode positioned on a side of the substrate opposite from the precursor.
Claim 17
Dependent Claim 22 words
The method of claim 15 , wherein the electrode comprises an annular shape, a D-shape, or a shape interdigitated with another electrode.
Claim 18
Dependent Claim 24 words
The method of claim 15 , wherein the application of the DC reference voltage is exclusive of application of RF power to the precursor.
Claim 19
Dependent Claim 65 words
The method of claim 1 , further comprising the acts of: removal of excess said precursor from said chamber; introduction of at least one ion generating gas into said chamber; generating a plasma from said ion generating gas to form ions; exposing said substrate to said ions; modulating said ions; and reacting said monolayer of said precursor with said ions to deposit said thin film.
Claim 20
Dependent Claim 16 words
The method of claim 18 , wherein the deposited thin film is at most one monolayer.
Claim 21
Dependent Claim 18 words
The method of claim 18 , wherein said method is repeated until the desired film thickness is achieved.

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