US5091207A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Process and apparatus for chemical vapor deposition
Assignee: Fujitsu Semiconductor Ltd
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Filing: 1990-07-19
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Granted: 1992-02-25
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Expires: 2010-07-19
Abstract
Abstract A process for chemical vapor deposition, in which a reactant gas is introduced into a reaction furnace containing a substrate on which a deposited layer is formed by a chemical reaction of the introduced reactant gas, and a used gas resulting from the chemical reaction is exhausted from the furnace through a plurality of exhaust ports disposed radially around an axis of flow of the exhaust gas introduced into the furnace, which comprises the steps of: exhausting the used gas during the forming of the deposited layer on the substrate through an exhaust system comprising; exhaust ports disposed symmetrically with respect to a plane which contains the axis and at a substantially uniform distance from the axis; and exhaust pipes extending from the exhaust ports, each of the pipes being provided with a conductance valve inserted therein and a sensor for measuring a temperature of the pipe surface, the temperature sensor being fixed to the outer surface of the pipe at a position between the exhaust port and the conductance valve, and the exhaust pipes having substantially the same shape, size, and heat capacity over the portion thereof between the exhaust port and the position at which the temperature sensor is disposed: and adjusting the conductance valves during the exhausting of the used gas to minimize the differentials among the temperature values measured by the temperature sensors. An apparatus for carrying out the process is also disclosed.
Inventors
- 👤 Hitoshi Tanaka
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-06 17:34
CPC Classifications
C; C23; C23C; C23C16/00; C23C16/44; C23C16/52; C23C16/4412
Claims Analysis
Total Claims: 14
Claim 1
Independent Claim
227 words
A process for chemical vapor deposition, in which a reactant gas is introduced into a reaction furnace containing a substrate on which a deposited layer is formed by a chemical reaction of the introduced reactant gas, and a used gas resulting from the chemical reaction is exhausted from the furnace through a plurality of exhaust ports disposed radially around an axis of flow of the reactant gas introduced into the furnace, which comprises the steps of: exhausting the used gas during a forming of the deposited layer on the substrate through an exhaust system comprising; exhaust ports disposed symmetrically with respect to a plane which contains said axis and at a substantially uniform distance from the axis; and exhaust pipes extending from the exhaust ports, each of the pipes being provided with a conductance valve inserted therein and a sensor for measuring a temperature of the pipe surface, the temperature sensor being fixed to the outer surface of the pipe at a position between the exhaust port and the conductance valve, and the exhaust pipes having substantially the same shape, size, and heat capacity over the portion thereof between the exhaust port and the position at which the temperature sensor is disposed; and adjusting the conductance valves during said exhausting of the used gas to minimize the differentials among the temperature values measured by the temperature sensors.
Claim 2
Dependent Claim
227 words
A process for chemical vapor deposition, in which a reactant gas is introduced into a reaction furnace containing a substrate on which a deposited layer is formed by a chemical reaction of the introduced reactant gas, and a used gas resulting from the chemical reaction is exhausted from the furnace through a plurality of exhaust ports disposed radially around an axis of flow of the reactant gas introduced into the furnace, which comprises the steps of: exhausting the used gas during a forming of the deposited layer on the substrate through an exhaust system comprising; exhaust ports disposed symmetrically with respect to a plane which contains said axis and at a substantially uniform distance from the axis; and exhaust pipes extending from the exhaust ports, each of the pipes being provided with a conductance valve inserted therein and a sensor for measuring a temperature of the pipe surface, the temperature sensor being fixed to the outer surface of the pipe at a position between the exhaust port and the conductance valve, and the exhaust pipes having substantially the same shape, size, and heat capacity over the portion thereof between the exhaust port and the position at which the temperature sensor is disposed; and adjusting the conductance valves during said exhausting of the used gas to minimize the differentials among the temperature values measured by the temperature sensors.
Claim 3
Dependent Claim
24 words
A process according to claim 1, wherein said exhaust ports are disposed in an arrangement such that distances between neighboring ports are substantially uniform.
Claim 4
Dependent Claim
30 words
A process according to claim 1, wherein said adjusting of the conductance valves is carried out so that the differentials among the temperature values are about 1° C. or less.
Claim 5
Dependent Claim
17 words
A process according to claim 1, wherein said adjusting of the conductance valves is carried out automatically.
Claim 6
Dependent Claim
18 words
A process according to claim 1, wherein the number of said exhaust ports is between two and four.
Claim 7
Independent Claim
188 words
An apparatus for carrying out a chemical vapor deposition process, in which a reactant gas is introduced into a reaction furnace containing a substrate on which a deposited layer is formed by a chemical reaction of the introduced reactant gas, and a used gas resulting from the chemical reaction is exhausted from the furnace through a plurality of exhaust ports disposed radially around an axis of flow of the reactant gas introduced into the furnace, which comprises: an exhaust system comprising; exhaust ports disposed symmetrically with respect to a plane which contains said axis and at a substantially uniform distance from the axis; and exhaust pipes extending from the exhaust ports, each of the pipes being provided with a conductance valve inserted therein and a sensor for measuring a temperature of the pipe surface, the temperature sensor being fixed to the outer surface of the pipe at a position between the exhaust port and the conductance valve, and the exhaust pipes having substantially the same shape, size, and heat capacity over the portion thereof between the exhaust port and the position at which the temperature sensor is disposed.
Claim 8
Independent Claim
188 words
An apparatus for carrying out a chemical vapor deposition process, in which a reactant gas is introduced into a reaction furnace containing a substrate on which a deposited layer is formed by a chemical reaction of the introduced reactant gas, and a used gas resulting from the chemical reaction is exhausted from the furnace through a plurality of exhaust ports disposed radially around an axis of flow of the reactant gas introduced into the furnace, which comprises: an exhaust system comprising; exhaust ports disposed symmetrically with respect to a plane which contains said axis and at a substantially uniform distance from the axis; and exhaust pipes extending from the exhaust ports, each of the pipes being provided with a conductance valve inserted therein and a sensor for measuring a temperature of the pipe surface, the temperature sensor being fixed to the outer surface of the pipe at a position between the exhaust port and the conductance valve, and the exhaust pipes having substantially the same shape, size, and heat capacity over the portion thereof between the exhaust port and the position at which the temperature sensor is disposed.
Claim 9
Dependent Claim
24 words
An apparatus according to claim 6, wherein said exhaust ports are disposed in an arrangement such that distances between neighboring ports are substantially uniform.
Claim 10
Dependent Claim
18 words
An apparatus according to claim 6, wherein the number of said exhaust ports is between two and four.
Claim 11
Dependent Claim
18 words
A process according to claim 2, wherein the number of said exhaust ports is between two and four.
Claim 12
Dependent Claim
18 words
A process according to claim 3, wherein the number of said exhaust ports is between two and four.
Claim 13
Dependent Claim
18 words
A process according to claim 4, wherein the number of said exhaust ports is between two and four.
Claim 14
Dependent Claim
18 words
A process according to claim 7, wherein the number of said exhaust ports is between two and four.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1995-02-24 | 1995-08-26 | 1996-02-25 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1999-02-24 | 1999-08-26 | 2000-02-25 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2003-02-24 | 2003-08-26 | 2004-02-25 | $7700.00 | Window Closed / Lapsed |