Vapor deposition apparatus

Claim 2

Apparatus as defined in claim 1 wherein said gas distribution baffle is a sintered steel plate and said exit pressure baffle is a perforated steel plate.

Claim 3

Apparatus as described in claim 1 wherein the gas resistance of said exit pressure baffle is about one-twentieth that of said gas distribution baffle.

Claim 4

Apparatus as defined in claim 1 wherein said substrate holder is a graphite susceptor.

Claim 5

Apparatus as defined in claim 1 wherein said substrate holder is substantially in the form of a hollow right circular cylinder.

Claim 6

Apparatus as defined in claim 6 wherein said heating means is an RF coil for inductively coupling energy to said substrate holder.

Claim 7

Apparatus as described in claim 7 wherein said substrate holder is rotated in said chamber to insure uniform heating of said substrate surfaces.

Claim 8

Apparatus as claimed in claim 1 wherein there is provided a heat shield mounted between said gaseous phase inlet means and said substrate holder to protect said gas distribution baffle from energy radiated by said substrate holder.

Claim 9

In a vapor transport reactor including a reaction chamber having a longitudinal axis, a substrate holder for holding substrates having reaction surfaces, heating means for heating means for heating substrates to a reaction temperature, gaseous phase inlet means and gaseous phasE exit means, the improvement comprising: gaseous phase inlet means located at one end of the reaction chamber comprising: a gas distribution baffle forming a plenum, said baffle extending substantially throughout the cross-sectional area of the chamber, said baffle capable of providing sufficient gas resistance to gaseous phase material to develop substantially uniform back pressure across said baffle, and said baffle also capable of delivering substantially uniform mass flow into the chamber, said flow having a substantially planar velocity front moving parallel to the longitudinal axis of the chamber and the substrate surfaces; and gaseous phase exit means comprising: an exit pressure baffle located at the other end of the chamber and extending over substantially all of the cross-sectional area of the chamber, said exit pressure baffle capable of providing substantially uniform gas resistance to gaseous phase material in the chamber to maintain a uniform mass flow rate per unit area across the chamber to prevent recirculation of gaseous phase materials and reaction byproducts.