Patent US3758906A successfully refreshed from Google Patents.
Patent US6630201B2 successfully refreshed from Google Patents.
US6630201B2
Expired / Lapsed
US
⏱️ 0.0 years remaining
Adsorption process for atomic layer deposition
Assignee: Novellus Systems Inc
•
Filing: 2001-10-24
•
Granted: 2003-10-07
•
Expires: 2021-10-24
Abstract
Abstract A method for conducting an ALD process to deposit layers on a substrate which includes an electrostatic chuck (ESC) to retain the substrate. Electrode(s) in the chuck assembly are used to induce a voltage on the substrate to promote precursor adsorption on the substrate.
Inventors
- 👤 Tony P. Chiang
- 👤 Karl F. Leeser
- 👤 Jeffrey A. Brown
- 👤 Jason E. Babcoke
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 01:08
CPC Classifications
C; C23; C23C; C23C16/00; C23C16/44; C23C16/4412; C23C16/02; C23C16/0227; C23C16/4411; C23C16/448; C23C16/4486; C23C16/455; C23C16/45523; C23C16/45525; C23C16/45527; C23C16/45536; C23C16/45544; C23C16/45557; C23C16/45561; C23C16/45563; C23C16/45565; C23C16/4557; C23C16/458; C23C16/4582; C23C16/4583; C23C16/4586; C23C16/50; C23C16/515; H; H01; H01J; H01J37/00; H01J37/32; H01J37/32431; H01J37/3244; H01J37/32449; H01J37/32798; H01J37/32853; H01J37/32862; H10; H10P; H10P14/00; H10P14/40; H10P14/42; H10P14/43; H10P14/432; H10W; H10W20/00; H10W20/01; H10W20/031; H10W20/071; H10W20/081
Claims Analysis
Total Claims: 21
Claim 1
Independent Claim
79 words
A method for depositing a thin film onto a substrate comprising the acts of: providing a precursor in a process chamber, without creating a plasma in the chamber, for adsorption on a surface of said substrate in the chamber; inducing a voltage on the substrate; and using the induced voltage to promote adsorption of a single monolayer of the precursor on the surface of the substrate, such that the monolayer is formed without creating a plasma in the chamber.
Claim 2
Independent Claim
79 words
A method for depositing a thin film onto a substrate comprising the acts of: providing a precursor in a process chamber, without creating a plasma in the chamber, for adsorption on a surface of said substrate in the chamber; inducing a voltage on the substrate; and using the induced voltage to promote adsorption of a single monolayer of the precursor on the surface of the substrate, such that the monolayer is formed without creating a plasma in the chamber.
Claim 3
Dependent Claim
16 words
The method of claim 1 , wherein the induced voltage comprises a continuous DC bias voltage.
Claim 4
Dependent Claim
11 words
The method of claim 1 , wherein the adsorption comprises chemisorption.
Claim 5
Dependent Claim
17 words
The method of claim 1 , wherein the magnitude of the induced voltage is less than 50V.
Claim 6
Dependent Claim
22 words
The method of claim 1 , wherein the induced voltage is an opposite polarity from a charge of ligands in the precursor.
Claim 7
Dependent Claim
22 words
The method of claim 1 , wherein the precursor comprises t-butylimino tris(diethylamino)tantalum (TBTDET), and the polarity of the induced voltage is positive.
Claim 8
Dependent Claim
27 words
The method of claim 1 , wherein the precursor comprises (trimethylvinylsilyl)hexafluoroacetylacetonato copper I (Cupraselect®) or t-butylimino tris(diethylamino)tantalum (TBTDET), and the polarity of the induced voltage is negative.
Claim 9
Dependent Claim
50 words
The method of claim 1 , wherein the precursor comprises pentakis(diethylamido)tantalum (PDEAT), pentakis(ethylmethylamido)tantalum (PEMAT), tetrakis(diethylamino)titanium (TDEAT), tetrakis(dimethylamido)titanium (TDMAT), TaBr 5 , TaCl 5 , TiCl 4 , CuCl, W(CO) 6 , or WF 6 , and the polarity of the induced voltage is opposite to a charge of the precursor.
Claim 10
Dependent Claim
11 words
The method of claim 1 , wherein the adsorption comprises physisorption.
Claim 11
Dependent Claim
15 words
The method of claim 1 , wherein the induced voltage is less than 10 volts.
Claim 12
Dependent Claim
23 words
The method of claim 1 , wherein inducing the voltage comprises applying a DC reference voltage to an electrostatic chuck supporting the substrate.
Claim 13
Dependent Claim
25 words
The method of claim 11 , wherein the application of the DC reference voltage is exclusive of an application of RF power to the precursor.
Claim 14
Dependent Claim
35 words
The method of claim 1 , wherein the induced voltage imparts a moment on the precursor, the moment being sufficient to align the precursor on the surface of the substrate in a specified, uniform orientation.
Claim 15
Dependent Claim
19 words
The method of claim 13 , wherein the induced voltage is a minimum magnitude required to impart the moment.
Claim 16
Dependent Claim
31 words
The method of claim 1 , wherein inducing the voltage comprises application of a DC reference voltage to an electrode positioned on a side of the substrate opposite from the precursor.
Claim 17
Dependent Claim
22 words
The method of claim 15 , wherein the electrode comprises an annular shape, a D-shape, or a shape interdigitated with another electrode.
Claim 18
Dependent Claim
24 words
The method of claim 15 , wherein the application of the DC reference voltage is exclusive of application of RF power to the precursor.
Claim 19
Dependent Claim
65 words
The method of claim 1 , further comprising the acts of: removal of excess said precursor from said chamber; introduction of at least one ion generating gas into said chamber; generating a plasma from said ion generating gas to form ions; exposing said substrate to said ions; modulating said ions; and reacting said monolayer of said precursor with said ions to deposit said thin film.
Claim 20
Dependent Claim
16 words
The method of claim 18 , wherein the deposited thin film is at most one monolayer.
Claim 21
Dependent Claim
18 words
The method of claim 18 , wherein said method is repeated until the desired film thickness is achieved.
References Cited (Backward Citations)
US4058430A
Cited
US4413022A
Cited
US4389973A
Cited
US4815962A
Cited
US5091207A
Cited
US6015590A
Cited
US5916365A
Cited
US6342277B1
Cited
US6174377B1
Cited
US5855675A
Cited
US5879459A
Cited
US5972430A
Cited
US20010048981A1
Cited
US6383955B1
Cited
WO2000016377A2
Cited
US6200893B1
Cited
US6410432B1
Cited
EP1052309A2
Cited
WO2000079576A1
Cited
US20020160125A1
Cited
US20010050039A1
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2006-10-06 | 2007-04-07 | 2007-10-07 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2010-10-06 | 2011-04-07 | 2011-10-07 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2014-10-06 | 2015-04-07 | 2015-10-07 | $7700.00 | Window Closed / Lapsed |