US6607976B2
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Copper interconnect barrier layer structure and formation method
Assignee: Applied Materials Inc
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Filing: 2001-09-25
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Granted: 2003-08-19
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Expires: 2021-09-25
Abstract
Abstract A method for forming a tungsten-containing copper interconnect barrier layer (e.g., a tungsten [W] or tungsten-nitride [W X N] copper interconnect barrier layer) on a substrate with a high (e.g., greater than 30%) sidewall step coverage and ample adhesion to underlying dielectric layers. The method includes first depositing a thin titanium-nitride (TiN) or tantalum nitride (TaN) nucleation layer on the substrate, followed by the formation of a tungsten-containing copper interconnect barrier layer (e.g., a W or W X N copper interconnect barrier layer) overlying the substrate. The tungsten-containing copper interconnect barrier layer can, for example, be formed using a Chemical Vapor Deposition (CVD) technique that employs a fluorine-free tungsten-containing gas (e.g., tungsten hexacarbonyl [W(CO) 6 ]) or a WF 6 -based Atomic Layer Deposition (ALD) technique. The presence of a thin TiN (or TaN) nucleation layer facilitates the formation of a tungsten-containing copper interconnect barrier layer with a sidewall step coverage of greater than 30% and ample adhesion to dielectric layers. A copper interconnect barrier layer structure includes a thin titanium-nitride (TiN) (or tantalum nitride [TaN]) nucleation layer disposed directly on the dielectric substrate (e.g., a single or dual-damascene copper interconnect dielectric substrate). The copper interconnect barrier layer structure also includes a tungsten-containing copper interconnect barrier layer (e.g., a W or W X N copper interconnect barrier layer) formed on the thin TiN (or TaN) nucleation layer using, for example, a CVD technique that employs a fluorine-free tungsten-containing gas (e.g., [W(CO) 6 ]) or a WF 6 -based ALD technique.
Inventors
- 👤 Ling Chen
- 👤 Seshadri Ganguli
- 👤 Christophe Marcadal
- 👤 Wei Cao
- 👤 Roderick C. Mosely
- 👤 Mei Chang
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 01:59
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/01; H10W20/031; H10W20/032; H10W20/033; H10P; H10P14/00; H10P14/40; H10P14/42; H10P14/43; H10P14/432; H10W20/035; H10W20/042; H10W20/045; H10W20/40; H10W20/41; H10W20/425
Claims Analysis
Total Claims: 21
Claim 1
Independent Claim
60 words
A method for the formation of a copper interconnect barrier layer on a substrate comprising: depositing one of a thin titanium-nitride nucleation layer and a thin tantalum-nitride nucleation layer on the substrate; and forming a tungsten-containing copper interconnect barrier layer overlying the substrate, wherein the forming step uses a Chemical Vapor Deposition (CVD) technique that employs a fluorine-free tungsten-containing gas.
Claim 2
Independent Claim
60 words
A method for the formation of a copper interconnect barrier layer on a substrate comprising: depositing one of a thin titanium-nitride nucleation layer and a thin tantalum-nitride nucleation layer on the substrate; and forming a tungsten-containing copper interconnect barrier layer overlying the substrate, wherein the forming step uses a Chemical Vapor Deposition (CVD) technique that employs a fluorine-free tungsten-containing gas.
Claim 3
Dependent Claim
31 words
The method of claim 1 , wherein the forming step uses a CVD technique that employs tungsten hexacarbonyl as the fluorine-free tungsten-containing gas to form the tungsten copper interconnect barrier layer.
Claim 4
Dependent Claim
39 words
The method of claim 2 , wherein the forming step uses a CVD technique conducted at a temperature in the range of 300° C. to 500° C. and a pressure in the range of 10 milli-Torr to 200 milli-Torr.
Claim 5
Dependent Claim
17 words
The method of claim 1 , wherein the forming step forms a tungsten-nitride copper interconnect barrier layer.
Claim 6
Dependent Claim
18 words
The method of claim 4 wherein the depositing step deposits a thin titanium-nitride nucleation layer on the substrate.
Claim 7
Dependent Claim
29 words
The method of claim 5 , wherein the forming step results in the formation of a titanium-nitride-tungsten interfacial layer between the tungsten-nitride copper interconnect barrier layer and the substrate.
Claim 8
Dependent Claim
28 words
The method of claim 4 , wherein the forming step uses a CVD technique that employs tungsten hexacarbonyl and ammonia to from the tungsten-nitride copper interconnect barrier layer.
Claim 9
Dependent Claim
37 words
The method of claim 7 , wherein the forming step uses a CVD technique conducted at a temperature in the range of 250° C. to 400° C. and a pressure of approximately 100 milli-Torr to 50 Torr.
Claim 10
Independent Claim
55 words
A method for the formation of a copper interconnect barrier layer on a substrate comprising: depositing one of a thin titanium-nitride nucleation layer and a thin tantalum-nitride nucleation layer on the substrate; and forming a tungsten-containing copper interconnect barrier layer overlying the substrate, wherein the forming step uses a WF6-based Atomic Layer Deposition (ALD) technique.
Claim 11
Independent Claim
55 words
A method for the formation of a copper interconnect barrier layer on a substrate comprising: depositing one of a thin titanium-nitride nucleation layer and a thin tantalum-nitride nucleation layer on the substrate; and forming a tungsten-containing copper interconnect barrier layer overlying the substrate, wherein the forming step uses a WF6-based Atomic Layer Deposition (ALD) technique.
Claim 12
Independent Claim
54 words
A method for the formation of a copper interconnect barrier layer on a substrate comprising: depositing one of a thin tantalum-nitride nucleation layer and a thin titanium-nitride nucleation layer on the substrate; and forming a tungsten-containing copper interconnect barrier layer overlying the substrate using a Chemical Vapor Deposition (CVD) technique that employs tungsten hexacarbonyl.
Claim 13
Independent Claim
54 words
A method for the formation of a copper interconnect barrier layer on a substrate comprising: depositing one of a thin tantalum-nitride nucleation layer and a thin titanium-nitride nucleation layer on the substrate; and forming a tungsten-containing copper interconnect barrier layer overlying the substrate using a Chemical Vapor Deposition (CVD) technique that employs tungsten hexacarbonyl.
Claim 14
Independent Claim
66 words
A method for the formation of a copper interconnect barrier layer on a substrate comprising: depositing one of a thin tantalum-nitride nucleation layer and a thin titanium-nitride nucleation layer on the substrate; forming a tungsten-containing copper interconnect barrier layer overlying the substrate using a Chemical Vapor Deposition (CVD) technique that employs tungsten hexacarbonyl; and depositing a copper interconnect layer on the tungsten-containing copper interconnect barrier layer.
Claim 15
Independent Claim
66 words
A method for the formation of a copper interconnect barrier layer on a substrate comprising: depositing one of a thin tantalum-nitride nucleation layer and a thin titanium-nitride nucleation layer on the substrate; forming a tungsten-containing copper interconnect barrier layer overlying the substrate using a Chemical Vapor Deposition (CVD) technique that employs tungsten hexacarbonyl; and depositing a copper interconnect layer on the tungsten-containing copper interconnect barrier layer.
Claim 16
Independent Claim
53 words
A method for the formation of a copper interconnect barrier layer on a substrate comprising: depositing one of a thin tantalum-nitride nucleation layer and a thin titanium-nitride nucleation layer on the substrate; and forming a tungsten-containing copper interconnect barrier layer overlying the substrate using a WF 6 -based Atomic Layer Deposition (ALD) technique.
Claim 17
Independent Claim
53 words
A method for the formation of a copper interconnect barrier layer on a substrate comprising: depositing one of a thin tantalum-nitride nucleation layer and a thin titanium-nitride nucleation layer on the substrate; and forming a tungsten-containing copper interconnect barrier layer overlying the substrate using a WF 6 -based Atomic Layer Deposition (ALD) technique.
Claim 18
Independent Claim
65 words
A method for the formation of a copper interconnect barrier layer on a substrate comprising: depositing one of a thin tantalum-nitride nucleation layer and a thin titanium-nitride nucleation layer on the substrate; forming a tungsten-containing copper interconnect barrier layer overlying the substrate using a WF 6 -based Atomic Layer Deposition (ALD) technique; and depositing a copper interconnect layer on the tungsten-containing copper interconnect barrier layer.
Claim 19
Independent Claim
65 words
A method for the formation of a copper interconnect barrier layer on a substrate comprising: depositing one of a thin tantalum-nitride nucleation layer and a thin titanium-nitride nucleation layer on the substrate; forming a tungsten-containing copper interconnect barrier layer overlying the substrate using a WF 6 -based Atomic Layer Deposition (ALD) technique; and depositing a copper interconnect layer on the tungsten-containing copper interconnect barrier layer.
Claim 20
Independent Claim
90 words
A method for the formation of a copper interconnect barrier layer on a substrate comprising: depositing one of a thin tantalum-nitride nucleation layer and a thin titanium-nitride nucleation layer on the substrate; forming a tungsten-containing copper interconnect barrier layer overlying the substrate using a WF 6 -based Atomic Layer Deposition (ALD) technique conducted at a temperature in the range of 200° C. to 400° C. and a pressure in the range of 0.1 Torr to 50 Torr; and depositing a copper interconnect layer on the tungsten-containing copper interconnect barrier layer.
Claim 21
Independent Claim
90 words
A method for the formation of a copper interconnect barrier layer on a substrate comprising: depositing one of a thin tantalum-nitride nucleation layer and a thin titanium-nitride nucleation layer on the substrate; forming a tungsten-containing copper interconnect barrier layer overlying the substrate using a WF 6 -based Atomic Layer Deposition (ALD) technique conducted at a temperature in the range of 200° C. to 400° C. and a pressure in the range of 0.1 Torr to 50 Torr; and depositing a copper interconnect layer on the tungsten-containing copper interconnect barrier layer.
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