US6130145A
Expired / Lapsed
US
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Insitu doped metal policide
Assignee: Infineon Technologies AG
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Filing: 1998-01-21
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Granted: 2000-10-10
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Expires: 2018-01-21
Abstract
Abstract A reduced metal-rich interface between a poly and metal silicide layer is achieved by insitu doping the metal silicide layer.
Inventors
- 👤 Matthias Ilg
- 👤 Johnathan Faltermeier
- 👤 Radhika Srinivasan
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-28 09:52
CPC Classifications
H; H10; H10D; H10D30/00; H10D30/60; H10D64/00; H10D64/60; H10D64/66; H10D64/661; H10D64/662; H10D64/663; H10D64/01; H10D64/013; H10D64/01302; H10D64/01304; H10D64/01306; H10D64/01308; H10D64/01312; H10P; H10P10/00
Claims Analysis
Total Claims: 18
Claim 1
Independent Claim
81 words
A method for forming a dynamic random access memory (DRAM) including a transistor having a polycide gate comprising: forming an oxide layer over a substrate; forming a polysilicon (poly) layer over the oxide layer; depositing a metal silicide layer over the poly layer, the metal silicide layer being insitu doped with dopants of one conductivity type to reduce metal rich interface between the poly and metal silicide layers; and patterning the oxide, poly, and metal silicide layers to form the gate.
Claim 2
Independent Claim
81 words
A method for forming a dynamic random access memory (DRAM) including a transistor having a polycide gate comprising: forming an oxide layer over a substrate; forming a polysilicon (poly) layer over the oxide layer; depositing a metal silicide layer over the poly layer, the metal silicide layer being insitu doped with dopants of one conductivity type to reduce metal rich interface between the poly and metal silicide layers; and patterning the oxide, poly, and metal silicide layers to form the gate.
Claim 3
Independent Claim
51 words
A method of fabricating a semiconductor device comprising: forming a polysilicon (poly) layer on a substrate; and depositing a metal silicide layer over the poly layer, the metal silicide layer being insuti doped with dopants of one conductivity type to reduce metal rich interface between the poly and metal silicide layers.
Claim 4
Independent Claim
51 words
A method of fabricating a semiconductor device comprising: forming a polysilicon (poly) layer on a substrate; and depositing a metal silicide layer over the poly layer, the metal silicide layer being insuti doped with dopants of one conductivity type to reduce metal rich interface between the poly and metal silicide layers.
Claim 5
Dependent Claim
19 words
The method of claim 2 wherein the dopants are selected from the group consisting of n-type or p-type dopants.
Claim 6
Dependent Claim
25 words
The method of claim 3 wherein the n-type dopants are selected from the group consisting of arsenic or phosphorus and the p-type dopants comprises boron.
Claim 7
Dependent Claim
11 words
The method of claim 4 wherein the poly layer comprises dopants.
Claim 8
Dependent Claim
23 words
The method of claim 5 wherein the dopants in the poly layer is of the same dopant type as the metal silicide layer.
Claim 9
Dependent Claim
15 words
The method of claim 6 wherein the metal silicide and poly layer comprises n-type dopants.
Claim 10
Dependent Claim
11 words
The method of claim 7 wherein the n-type dopants comprise phosphorus.
Claim 11
Dependent Claim
23 words
The method of claim 8 wherein the concentration of dopants in the metal silicide layer is about 10 19 to 5×10 21 .
Claim 12
Dependent Claim
22 words
The method of claim 9 wherein the concentration of dopants in the poly layer is about 10 19 to 5×10 21 .
Claim 13
Dependent Claim
21 words
The method of claim 10 wherein the metal silicide is selected from the group comprising tungsten, molybdenum, tantalum, titanium, and cobalt.
Claim 14
Dependent Claim
11 words
The method of claim 11 wherein the metal silicide comprises tungsten.
Claim 15
Dependent Claim
16 words
The method of claim 12 wherein the metal silicide is deposited by chemical vapor deposition (CVD).
Claim 16
Dependent Claim
21 words
The method of claim 13 wherein a silicon precursor, a tungsten precursor, and a dopant precursor are used for the CVD.
Claim 17
Dependent Claim
59 words
The method of claim 14 wherein the silicon precursor is selected from the group comprising SiH 4 , Si2H 6 , or SiH 2 Cl 2 , the tungsten precursor is selected from the group comprising WF 6 , WCl 6 , or W[CO] 6 and phosphorus precursor selected from the group comprising PH 3 or POCl 4 .
Claim 18
Dependent Claim
24 words
The method of claim 15 wherein the metal silicide is deposited at a temperature of about 450-600° C. and pressure of about 1-5 Torr.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2003-10-10 | 2004-04-10 | 2004-10-10 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2007-10-10 | 2008-04-10 | 2008-10-10 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2011-10-10 | 2012-04-10 | 2012-10-10 | $7700.00 | Window Closed / Lapsed |