Abstract A semiconductor device in which mutual diffusion of doped impurities occurring through an upper silicide electrode layer is prevented. A silicide electrode layer is doped with both the same degree of p-type impurities as the concentration of p-type impurities of the lower gate electrode layer and the same degree of n-type impurities as the concentration of n-type impurities. As a result, the concentration of doped impurities of the gate electrode layer is balanced at the two sides of the interface of the pMOS side and nMOS side. Therefore, heat diffusion caused by subsequent heat treatment is prevented and the problem of mutual diffusion can be solved. The present invention is also suitable for the SALICIDE process. Even when the silicide electrode layer is formed simultaneously on an extremely shallow source or drain regions since the concentration of the impurities of the silicide electrode layer was initially high, the lower impurities will not be drained so the contact resistance will not be made to deteriorate. As a result, it becomes easy for the SALICIDE process to be applied to submicron devices. In the method of production of the present invention, the silicide electrode layer is formed by the CVD method or the sputtering method and the impurities doped during this process, so no special step has to be provided for introducing the impurities.
A method of forming a CMOS semiconductor device having a dual-gate construction, comprising the steps of at the time of forming dual-layer construction gate electrodes comprised of a lower gate electrode layer with p-type or n-type impurities doped separately for the different channel conductivity type transistor regions of the p-channel and n-channel MOS transistors and an upper common silicide electrode layer, forming a polycrystalline silicon film for forming the lower gate electrode layer, selectively doping said polycrystalline silicon film with p-type or n-type impurities for said different channel conductivity type transistor regions, and forming a silicide film to form the upper common silicide electrode layer on the polycrystalline silicon film, the silicide film being doped with both the same degree of p-type impurities as the concentration of the p-type impurities of the lower gate electrode layer and the same degree of n-type impurities as the concentration of n-type impurities of the gate electrode layer while being formed.
Claim 2
Independent Claim
157 words
A method of forming a CMOS semiconductor device having a dual-gate construction, comprising the steps of at the time of forming dual-layer construction gate electrodes comprised of a lower gate electrode layer with p-type or n-type impurities doped separately for the different channel conductivity type transistor regions of the p-channel and n-channel MOS transistors and an upper common silicide electrode layer, forming a polycrystalline silicon film for forming the lower gate electrode layer, selectively doping said polycrystalline silicon film with p-type or n-type impurities for said different channel conductivity type transistor regions, and forming a silicide film to form the upper common silicide electrode layer on the polycrystalline silicon film, the silicide film being doped with both the same degree of p-type impurities as the concentration of the p-type impurities of the lower gate electrode layer and the same degree of n-type impurities as the concentration of n-type impurities of the gate electrode layer while being formed.
Claim 3
Dependent Claim
57 words
A method of forming a CMOS semiconductor device having a dual-gate electrode construction as set forth in claim 1, wherein the dual-gate electrode construction comprised of the lower gate electrode layer with p-type or n-type impurities doped separately for the different channel conductivity type transistor regions and the upper common silicide electrode layer is formed by self-alignment.
Claim 4
Dependent Claim
36 words
A method of forming a CMOS semiconductor device having a dual-gate electrode construction as set forth in claim 1, wherein the upper common silicide electrode layer is formed by the CVD method or the sputtering method.
Claim 5
Dependent Claim
46 words
A method of forming a CMOS semiconductor device having a dual-gate electrode construction as set forth in claim 1, wherein the upper common silicide electrode layer is comprised of a material selected from the group comprised of tungsten silicide, titanium silicide, cobalt silicide, and nickel silicide.