US5355010A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Semiconductor device with a dual type polycide layer comprising a uniformly p-type doped silicide
Assignee: Panasonic Holdings Corp
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Filing: 1992-06-18
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Granted: 1994-10-11
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Expires: 2012-06-18
Abstract
Abstract A semiconductor device comprising a semiconductor substrate, an insulating film formed on the semiconductor substrate, and a polycide film including a polysilicon layer and a silicide layer formed on the insulating film. The polysilicon layer includes a p-type region having p-type impurities diffused therein and an n-type region having n-type impurities diffused therein. The p-type impurities are implanted into the silicide layer in order to have a substantially uniform concentration over the entire potion thereof, so that the p-type impurities in the p-type region of the polysilicon layer do not diffuse into the silicide film by a poet heat treatment.
Inventors
- 👤 Toyokazu Fujii
- 👤 Yasushi Naito
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 09:45
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/01; H10W20/031; H10W20/064; H10W20/066; H10D; H10D64/00; H10D64/01; H10D64/013; H10D64/01302; H10D64/01304; H10D64/01306; H10D64/01308; H10D64/01312; H10D84/00; H10D84/01; H10D84/0123; H10D84/0126; H10D84/0165; H10D84/0172; H10D84/0177; H10D84/02; H10D84/03; H10D84/038; H10W20/40; H10W20/41; H10W20/44; H10W20/4451
Claims Analysis
Total Claims: 13
Claim 1
Independent Claim
92 words
A semiconductor device comprising a semiconductor substrate, an insulating film formed on said semiconductor substrate, and a polycide film formed on said insulating film; wherein said polycide film comprises: a polysilicon layer formed on the insulating film and a silicide layer formed on said polysilicon layer, the polysilicon aver including a p-type region having p-type impurities diffused therein and an n-type region having n-type impurities diffused therein; and wherein p-type impurities of a higher concentration than said p-type region in said polysilicon layer are substantially uniformly diffused in the entire silicide layer.
Claim 2
Dependent Claim
92 words
A semiconductor device comprising a semiconductor substrate, an insulating film formed on said semiconductor substrate, and a polycide film formed on said insulating film; wherein said polycide film comprises: a polysilicon layer formed on the insulating film and a silicide layer formed on said polysilicon layer, the polysilicon aver including a p-type region having p-type impurities diffused therein and an n-type region having n-type impurities diffused therein; and wherein p-type impurities of a higher concentration than said p-type region in said polysilicon layer are substantially uniformly diffused in the entire silicide layer.
Claim 3
Dependent Claim
34 words
A semiconductor device according to claim 1, wherein the concentration of said p-type impurities in said silicide layer is higher than that of said p-type impurities in said p-type region of said polysilicon layer.
Claim 4
Dependent Claim
13 words
A semiconductor device according to claim 1, wherein said p-type impurities are boron.
Claim 5
Dependent Claim
16 words
A semiconductor device according to claim 1, wherein said silicide layer is a tungsten silicide layer.
Claim 6
Dependent Claim
29 words
A semiconductor device according to claim 1, further comprising a transistor formed on said semiconductor substrate, the transistor using a portion of said polycide film as a gate electrode.
Claim 7
Dependent Claim
33 words
A semiconductor device according to claim 1, further comprising an impurity diffusion region formed in said semiconductor substrate, the impurity diffusion region being in contact with said polysilicon layer of said polycide film.
Claim 8
Dependent Claim
93 words
A semiconductor device comprising a semiconductor substrate, an insulating film formed on said semiconductor substrate, and a polycide film formed on said insulating film; wherein said polycide film comprises: a polysilicon layer formed on the insulating film and a silicide layer formed on said polysilicon layer, the polysilicon layer including a p-type region having p-type impurities diffused therein and an n-type region having n-type impurities diffused therein; and the p-type impurities are implanted in said silicide layer except a portion of said silicide layer located on said p-type region of said polysilicon layer.
Claim 9
Dependent Claim
93 words
A semiconductor device comprising a semiconductor substrate, an insulating film formed on said semiconductor substrate, and a polycide film formed on said insulating film; wherein said polycide film comprises: a polysilicon layer formed on the insulating film and a silicide layer formed on said polysilicon layer, the polysilicon layer including a p-type region having p-type impurities diffused therein and an n-type region having n-type impurities diffused therein; and the p-type impurities are implanted in said silicide layer except a portion of said silicide layer located on said p-type region of said polysilicon layer.
Claim 10
Dependent Claim
13 words
A semiconductor device according to claim 7, wherein said p-type impurities are boron.
Claim 11
Dependent Claim
16 words
A semiconductor device according to claim 7, wherein said silicide layer is a tungsten silicide layer.
Claim 12
Dependent Claim
29 words
A semiconductor device according to claim 7, further comprising a transistor formed on said semiconductor substrate, the transistor using a portion of said polycide film as a gate electrode.
Claim 13
Dependent Claim
33 words
A semiconductor device according to claim 7, further comprising an impurity diffusion region formed in said semiconductor substrate, the impurity diffusion region being in contact with said polysilicon layer of said polycide film.
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JPS57192079A
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US4640844A
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JPS61225838A
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JPH01205417A
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JPH01265542A
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JPH02192161A
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JPH04150019A
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