US5487918A — Method of depositing metal oxides

Claim 1

Independent Claim 53 words

A method of depositing metallic oxides on a substrate, consisting essentially of: (a) providing a metallic compound in an inert atmosphere, said metallic compound containing a metal selected from the group consisting of Group 1A to Group VIII metals; (b) reacting said metallic compound with an organosemiconductor oxane to deposit a metallic oxide.

Claim 2

Independent Claim 53 words

A method of depositing metallic oxides on a substrate, consisting essentially of: (a) providing a metallic compound in an inert atmosphere, said metallic compound containing a metal selected from the group consisting of Group 1A to Group VIII metals; (b) reacting said metallic compound with an organosemiconductor oxane to deposit a metallic oxide.

Claim 3

Dependent Claim 17 words

A method of depositing metallic oxides in accordance with claim 1 wherein said inert atmosphere is anhydrous.

Claim 4

Dependent Claim 41 words

A method of depositing metallic oxides in accordance with claim 1, wherein the metallic compound is zinc chloride, the reaction temperature of said metallic compound with said organosemiconductor oxane is between 60°-150° C., and the deposited metallic oxide is zinc oxide.

Claim 5

Dependent Claim 36 words

A method of preparing metallic oxides in accordance with claim 1 further including the step of producing a conductive metal oxide by including a metallic halide with the metallic compound in a molar concentration of 1-4%.

Claim 6

Dependent Claim 30 words

A method of depositing metallic oxides in accordance with claim 1, wherein the metallic oxide is heated at 250° C. or above to control the crystallinity of said metallic oxide.

Claim 7

Dependent Claim 57 words

A method of preparing metallic oxides in accordance with claim 1 wherein a metallic compound in the form of a mixture of indium trichloride with tin tetrachloride in ethylether is sprayed on a hot glass substrate at 300° C., along with equimolar solutions of hexamethyldisiloxane in ether, to provide a transparent conductive coating of indium tin oxide.

Claim 8

Dependent Claim 12 words

The method of claim 1 wherein said organosemiconductor oxane is a siloxane.

Claim 9

Dependent Claim 63 words

The method of claim 1 wherein the step of reacting said metallic compound with organosemiconductor oxide comprises: (a) dissolving a metallic component in the form of a halide in an organic solvent; and (b) reacting said metallic halide in solution with an organosemiconductor oxane in the form of a siloxane at a temperature in the range of from about -20° to 300° C.

Claim 10

Independent Claim 107 words

A method of depositing a metallic oxide coating on a substrate, comprising: (a) providing a solution of an organometallic compound containing a metal in an inert atmosphere, said metal selected from the group consisting of Group IA metals such as lithium, Group IB metals such as silver, Group IIA metals such as beryllium, Group IIB metals such as zinc, Group IIIA metals such as indium, Group IVA metals such as tin; Group IVB metals such as zirconium, Group VIB metals such as moiybdenum, and Group VIII metals such as iridium and nickel; and (b) reacting said organometallic compound with an organosemiconductor oxane to deposit a metallic oxide.

Claim 11

Independent Claim 107 words

A method of depositing a metallic oxide coating on a substrate, comprising: (a) providing a solution of an organometallic compound containing a metal in an inert atmosphere, said metal selected from the group consisting of Group IA metals such as lithium, Group IB metals such as silver, Group IIA metals such as beryllium, Group IIB metals such as zinc, Group IIIA metals such as indium, Group IVA metals such as tin; Group IVB metals such as zirconium, Group VIB metals such as moiybdenum, and Group VIII metals such as iridium and nickel; and (b) reacting said organometallic compound with an organosemiconductor oxane to deposit a metallic oxide.

Claim 12

Dependent Claim 12 words

A method of depositing a metallic oxide in accordance with claim 9.

Claim 13

Dependent Claim 61 words

The method of claim 1 for producing a coating from dimethylzinc said dimethylzinc and hexamethyldisiloxane are combined at a temperature of about 100° C. further including the introduction of a halogeneous boron compound in the 1.0-10% range; said coating having a 2.5 micron thickness and a transmittance for light of about 80 to 95% and a resistivity of 3×10 -3 ohm-centimeters.

Claim 14

Dependent Claim 24 words

The method of claim 9 wherein said organosemiconductor oxane is selected from the group consisting of hexamethyldisiloxane, hexaethyldisiloxane, hexaphenyldisiloxane, and 1, 1, 3, 3-tetraphenyl-1-3-dimethyldisiloxane.

Claim 15

Independent Claim 42 words

A method of depositing a transition metal oxide on a substrate, comprising (a) providing a transition metal compound in an organic solvent to form a metal complex, and (b) reacting said metal complex with an organosiloxane to deposit a transition metal oxide.

Claim 16

Independent Claim 42 words

A method of depositing a transition metal oxide on a substrate, comprising (a) providing a transition metal compound in an organic solvent to form a metal complex, and (b) reacting said metal complex with an organosiloxane to deposit a transition metal oxide.

Claim 17

Dependent Claim 41 words

A method of depositing a transition metal oxide in accordance with claim 13, wherein the organic solvent is benzene, the organosiloxane is stoichiometric hexamethyldisiloxane, and the reaction temperature of said metal complex with said organosiloxane is between 20° and 200° C.

Claim 18

Dependent Claim 48 words

The method of claim 13 wherein the resulting transition metal oxide is carried by an aerosol carrier further including the step of depositing on a substrate at a temperature in the range from 100° to 500° C., with a thickness of about 100 Å to about 3,000 Å.

Claim 19

Dependent Claim 24 words

The method of claim 13 wherein said transition metal compound is a metal compound selected from the group consisting of metal chelates and chlorometalates.

Claim 20

Independent Claim 55 words

A method of preparing metallic oxides which comprises the steps of: (a) providing a solution of a metallic compound in an anhydrous solvent; and (b) reacting said compound with a Group IV organosemiconductor oxide; whereby said organosemiconductor oxane reacts with said metallic compound to deposit a metallic oxide leave a volatile or soluble organosemiconductor residue.

Claim 21

Independent Claim 55 words

A method of preparing metallic oxides which comprises the steps of: (a) providing a solution of a metallic compound in an anhydrous solvent; and (b) reacting said compound with a Group IV organosemiconductor oxide; whereby said organosemiconductor oxane reacts with said metallic compound to deposit a metallic oxide leave a volatile or soluble organosemiconductor residue.

Claim 22

Dependent Claim 23 words

The method of claim 17 wherein different concentrations of reactants are used in the temperature range of from about 20° to 600° C.

Annuity Stage	Window Opens	Payment Deadline	Surcharge Period Until	Estimated Fee	Status
3.5 Years (Year 4)	1999-01-29	1999-07-31	2000-01-30	$2000.00	Window Closed / Lapsed
7.5 Years (Year 8)	2003-01-29	2003-07-31	2004-01-30	$3760.00	Window Closed / Lapsed
11.5 Years (Year 12)	2007-01-29	2007-07-31	2008-01-30	$7700.00	Window Closed / Lapsed

Method of depositing metal oxides

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