US6265260B1
Expired / Lapsed
US
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Method for making an integrated circuit capacitor including tantalum pentoxide
Assignee: Nokia of America Corp
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Filing: 1999-06-30
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Granted: 2001-07-24
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Expires: 2019-06-30
Abstract
Abstract A method for making an integrated circuit capacitor which in one embodiment preferably comprises the steps of: forming, adjacent a semiconductor substrate, a first metal electrode comprising a metal nitride surface portion; forming a tantalum pentoxide layer on the metal nitride surface portion while maintaining a temperature below an oxidizing temperature of the metal; remote plasma annealing the tantalum pentoxide layer; and forming a second electrode adjacent the tantalum pentoxide layer. The step of forming the tantalum pentoxide layer preferably comprises chemical vapor deposition of the tantalum pentoxide at a temperature below about 500° C. Accordingly, oxidation of the metal is avoided and a high quality tantalum pentoxide is produced. The metal of the first metal electrode may comprise at least one of titanium, tungsten, tantalum, and alloys thereof.
Inventors
- 👤 Glenn B. Alers
- 👤 Pradip Kumar Roy
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 01:24
CPC Classifications
H; H10; H10D; H10D1/00; H10D1/01; H10D1/041; H10D1/042; H10P; H10P14/00; H10P14/60; H10P14/69; H10P14/692; H10P14/6938; H10P14/6939; H10P14/69393; H10D1/60; H10D1/68; H10P14/63; H10P14/6326; H10P14/6328; H10P14/6334; H10P14/65; H10P14/6516; H10P14/6529; H10P14/6532; H10P14/66; H10P14/668
Claims Analysis
Total Claims: 30
Claim 1
Independent Claim
94 words
A method for making an integrated circuit capacitor comprising the steps of: forming a first metal electrode adjacent a semiconductor substrate; forming a tantalum pentoxide layer on the first metal electrode while maintaining a temperature below an oxidizing temperature thereof; performing at least one remote plasma anneal of the tantalum pentoxide layer while maintaining a temperature below the oxidizing temperature of the first metal electrode; and forming a second electrode adjacent the tantalum pentoxide layer after the step of annealing and while maintaining a temperature below the oxidizing temperature of the first metal electrode.
Claim 2
Independent Claim
94 words
A method for making an integrated circuit capacitor comprising the steps of: forming a first metal electrode adjacent a semiconductor substrate; forming a tantalum pentoxide layer on the first metal electrode while maintaining a temperature below an oxidizing temperature thereof; performing at least one remote plasma anneal of the tantalum pentoxide layer while maintaining a temperature below the oxidizing temperature of the first metal electrode; and forming a second electrode adjacent the tantalum pentoxide layer after the step of annealing and while maintaining a temperature below the oxidizing temperature of the first metal electrode.
Claim 3
Dependent Claim
27 words
A method according to claim 1 wherein the step of forming the tantalum pentoxide layer comprises chemical vapor deposition thereof at a temperature below about 500° C.
Claim 4
Dependent Claim
27 words
A method according to claim 1 wherein the step of forming the tantalum pentoxide layer comprises chemical vapor deposition thereof at a temperature below about 400° C.
Claim 5
Dependent Claim
31 words
A method according to claim 1 wherein the step of forming the tantalum pentoxide layer further comprises forming the tantalum pentoxide layer in a time of less than about 10 minutes.
Claim 6
Dependent Claim
31 words
A method according to claim 1 wherein the step of forming the tantalum pentoxide layer further comprises forming the tantalum pentoxide layer at a pressure of greater than about 3 Torr.
Claim 7
Dependent Claim
30 words
A method according to claim 1 wherein the step of performing at least one remote plasma anneal comprises exposing the tantalum pentoxide layer to a pure nitrogen containing remote plasma.
Claim 8
Dependent Claim
38 words
A method according to claim 6 wherein the step of performing at least one remote plasma anneal comprises exposing the tantalum pentoxide layer to an oxygen and nitrogen containing remote plasma after the pure nitrogen remote plasma anneal.
Claim 9
Dependent Claim
33 words
A method according to claim 1 wherein the step of forming the first metal electrode comprises forming the first metal electrode to include at least one of titanium, tungsten, tantalum, and alloys thereof.
Claim 10
Dependent Claim
36 words
A method according to claim 1 wherein the step of forming the first metal electrode comprises forming the first metal electrode to include at least one of titanium, tungsten, tantalum, platinum, ruthenium, iridium, and alloys thereof.
Claim 11
Dependent Claim
20 words
A method according to claim 1 wherein the step of forming the second electrode comprises forming a second metal electrode.
Claim 12
Dependent Claim
59 words
A method according to claim 1 further comprising the steps of: forming at least one dielectric layer adjacent the semiconductor substrate; and forming an opening in the at least one dielectric layer; and wherein the step of forming the first metal electrode comprises forming the first metal electrode to line the opening in the at least one dielectric layer.
Claim 13
Dependent Claim
31 words
A method according to claim 1 wherein the step of forming the first metal electrode comprises the steps of forming a first metal layer and nitridizing an upper surface portion thereof.
Claim 14
Dependent Claim
33 words
A method according to claim 12 wherein the step of nitridizing comprises exposing the first metal layer to a nitrogen containing ambient while maintaining a temperature below the oxidizing temperature of the metal.
Claim 15
Dependent Claim
40 words
A method according to claim 1 wherein the step of forming the first metal layer electrode comprises depositing a first metal layer and depositing a metal nitride layer thereon while maintaining a temperature below the oxidizing temperature of the metal.
Claim 16
Independent Claim
92 words
A method for making an integrated circuit capacitor comprising the steps of: forming a first metal electrode adjacent a semiconductor substrate; forming a tantalum pentoxide layer on the first electrode while maintaining a temperature below about 500° C. for a time period of less than about 10 minutes; performing at least one remote plasma anneal of the tantalum pentoxide layer while maintaining a temperature below about 500° C.; and forming a second electrode adjacent the tantalum pentoxide layer after the step of annealing and while maintaining a temperature below about 500° C.
Claim 17
Independent Claim
92 words
A method for making an integrated circuit capacitor comprising the steps of: forming a first metal electrode adjacent a semiconductor substrate; forming a tantalum pentoxide layer on the first electrode while maintaining a temperature below about 500° C. for a time period of less than about 10 minutes; performing at least one remote plasma anneal of the tantalum pentoxide layer while maintaining a temperature below about 500° C.; and forming a second electrode adjacent the tantalum pentoxide layer after the step of annealing and while maintaining a temperature below about 500° C.
Claim 18
Dependent Claim
27 words
A method according to claim 15 wherein the step of forming the tantalum pentoxide layer comprises chemical vapor deposition thereof at a temperature below about 400° C.
Claim 19
Dependent Claim
30 words
A method according to claim 15 wherein the step of performing at least one remote plasma anneal comprises exposing the tantalum pentoxide layer to a pure nitrogen containing remote plasma.
Claim 20
Dependent Claim
38 words
A method according to claim 17 wherein the step of performing at least one remote plasma anneal comprises exposing the tantalum pentoxide layer to an oxygen and nitrogen containing remote plasma after the pure nitrogen remote plasma anneal.
Claim 21
Dependent Claim
33 words
A method according to claim 15 wherein the step of forming the first metal electrode comprises forming the first metal electrode to include at least one of titanium, tungsten, tantalum, and alloys thereof.
Claim 22
Dependent Claim
36 words
A method according to claim 15 wherein the step of forming the first metal electrode comprises forming the first metal electrode to include at least one of titanium, tungsten, tantalum, platinum, ruthenium, iridium, and alloys thereof.
Claim 23
Dependent Claim
20 words
A method according to claim 15 wherein the step of forming the second electrode comprises forming a second metal electrode.
Claim 24
Dependent Claim
59 words
A method according to claim 15 further comprising the steps of: forming at least one dielectric layer adjacent the semiconductor substrate; and forming an opening in the at least one dielectric layer; and wherein the step of forming the first metal electrode comprises forming the first metal electrode to line the opening in the at least one dielectric layer.
Claim 25
Independent Claim
101 words
A method for making an integrated circuit capacitor comprising the steps of: forming, adjacent a semiconductor substrate, a first metal electrode comprising at least one of titanium, tungsten, tantalum, and alloys thereof; forming a tantalum pentoxide layer on the first metal electrode while maintaining a temperature below about 500° C.; remote plasma annealing the tantalum pentoxide layer in a pure nitrogen plasma; remote plasma annealing the tantalum pentoxide layer in a nitrogen and oxygen plasma after the pure nitrogen anneal; and forming a second electrode adjacent the tantalum pentoxide layer after the remote plasma annealing in the nitrogen and oxygen plasma.
Claim 26
Independent Claim
101 words
A method for making an integrated circuit capacitor comprising the steps of: forming, adjacent a semiconductor substrate, a first metal electrode comprising at least one of titanium, tungsten, tantalum, and alloys thereof; forming a tantalum pentoxide layer on the first metal electrode while maintaining a temperature below about 500° C.; remote plasma annealing the tantalum pentoxide layer in a pure nitrogen plasma; remote plasma annealing the tantalum pentoxide layer in a nitrogen and oxygen plasma after the pure nitrogen anneal; and forming a second electrode adjacent the tantalum pentoxide layer after the remote plasma annealing in the nitrogen and oxygen plasma.
Claim 27
Dependent Claim
27 words
A method according to claim 23 wherein the step of forming the tantalum pentoxide layer comprises chemical vapor deposition thereof at a temperature below about 400° C.
Claim 28
Dependent Claim
31 words
A method according to claim 23 wherein the step of forming the tantalum pentoxide layer further comprises forming the tantalum pentoxide layer in a time of less than about 10 minutes.
Claim 29
Dependent Claim
20 words
A method according to claim 23 wherein the step of forming the second electrode comprises forming a second metal electrode.
Claim 30
Dependent Claim
58 words
A method according to claim 23 further comprising the steps of: forming at least one dielectric layer adjacent the semiconductor substrate; and forming an opening in the at least one dielectric layer; wherein the step of forming the first metal electrode comprises forming the first metal electrode to line the opening in the at least one dielectric layer.
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| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 2004-07-23 | 2005-01-22 | 2005-07-24 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2008-07-23 | 2009-01-22 | 2009-07-24 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2012-07-23 | 2013-01-22 | 2013-07-24 | $7700.00 | Window Closed / Lapsed |