Method for making a metal to metal capacitor

Claim 1

A method for fabricating a capacitor comprising: a) forming a field dielectric layer on a silicon substrate; b) forming a conductive first layer in contact with said field dielectric layer; then c) depositing interlevel dielectric on said conductive first layer as a patterned layer, said interlevel dielectric having at least one window having at least one side wall; then d) forming a bottom plate of the capacitor comprising a conductive second layer including a first metal in electrical contacting relation with said conductive first layer by depositing said first metal in said window such that a portion of said first metal is deposited on said at least one side wall and overlies said interlevel dielectric; e) forming a layer of capacitor dielectric in contact with said bottom plate of the capacitor, said first metal remaining on said at least one side wall of the window and overlying the interlevel dielectric when said capacitor dielectric layer is formed; and f) forming a top plate of the capacitor comprising a conductive third layer including a second metal onto said capacitor dielectric.

Claim 2

A method for fabricating a capacitor comprising: a) forming a field dielectric layer on a silicon substrate; b) forming a conductive first layer in contact with said field dielectric layer; then c) depositing interlevel dielectric on said conductive first layer as a patterned layer, said interlevel dielectric having at least one window having at least one side wall; then d) forming a bottom plate of the capacitor comprising a conductive second layer including a first metal in electrical contacting relation with said conductive first layer by depositing said first metal in said window such that a portion of said first metal is deposited on said at least one side wall and overlies said interlevel dielectric; e) forming a layer of capacitor dielectric in contact with said bottom plate of the capacitor, said first metal remaining on said at least one side wall of the window and overlying the interlevel dielectric when said capacitor dielectric layer is formed; and f) forming a top plate of the capacitor comprising a conductive third layer including a second metal onto said capacitor dielectric.

Claim 9

A method for fabricating a capacitor on an integrated circuit comprising: a) forming a field dielectric layer on a silicon substrate; b) forming a conductive first layer in contract with said field dielectric layer; c) depositing a pattern of interlevel dielectric on said conductive first layer; d) forming overall a conductive second layer including a first metal; e) forming an overall layer of capacitor dielectric in contact with said conductive second layer overlying the interlevel dielectric; f) applying a first photoresist to cover a selected portion of said capacitor dielectric to delineate the capacitor; g) removing portions of the capacitor dielectric not covered by said first photoresist; h) removing said first photoresist; i) applying an overall layer of second metal; j) applying a second photoresist to selected portions of said overall layer of second metal, said second photoresist being patterned to define areas for etching; k) applying an etchant to said areas for etching defined by said second photoresist; and l) removing said second photoresist.

Claim 10

A method for fabricating a capacitor on an integrated circuit comprising: a) forming a field dielectric layer on a silicon substrate; b) forming a conductive first layer in contract with said field dielectric layer; c) depositing a pattern of interlevel dielectric on said conductive first layer; d) forming overall a conductive second layer including a first metal; e) forming an overall layer of capacitor dielectric in contact with said conductive second layer overlying the interlevel dielectric; f) applying a first photoresist to cover a selected portion of said capacitor dielectric to delineate the capacitor; g) removing portions of the capacitor dielectric not covered by said first photoresist; h) removing said first photoresist; i) applying an overall layer of second metal; j) applying a second photoresist to selected portions of said overall layer of second metal, said second photoresist being patterned to define areas for etching; k) applying an etchant to said areas for etching defined by said second photoresist; and l) removing said second photoresist.

Claim 18

A method for fabricating a capacitor comprising: a) forming a field dielectric layer on a silicon substrate; b) forming a conductive first layer on said field dielectric; c) forming a bottom plate of the capacitor comprising a layer of conductive material including a first metal in electrical contacting relation with said conductive first layer; then d) forming a layer of capacitor dielectric in contact with said bottom plate of said capacitor, wherein the first metal overlies an interlevel dielectric; e) applying a first photoresist to cover a selected portion of said capacitor dielectric to delineate the capacitor; f) removing portions of the capacitor dielectric not covered by the first photoresist; g) removing the first photoresist; h) applying a layer of second metal; i) applying a patterned layer of second photoresist, said layer of second photoresist defining areas for etching; j) applying an etchant to said areas for etching the second metal defined by said second photoresist; and k) removing said second photoresist.

Claim 19

A method for fabricating a capacitor comprising: a) forming a field dielectric layer on a silicon substrate; b) forming a conductive first layer on said field dielectric; c) forming a bottom plate of the capacitor comprising a layer of conductive material including a first metal in electrical contacting relation with said conductive first layer; then d) forming a layer of capacitor dielectric in contact with said bottom plate of said capacitor, wherein the first metal overlies an interlevel dielectric; e) applying a first photoresist to cover a selected portion of said capacitor dielectric to delineate the capacitor; f) removing portions of the capacitor dielectric not covered by the first photoresist; g) removing the first photoresist; h) applying a layer of second metal; i) applying a patterned layer of second photoresist, said layer of second photoresist defining areas for etching; j) applying an etchant to said areas for etching the second metal defined by said second photoresist; and k) removing said second photoresist.

Claim 27

A method for fabricating a capacitor comprising: a) forming a dielectric layer on a substrate; b) forming a conductive first layer in contact with said dielectric layer; then c) depositing interlevel dielectric on said conductive first layer as a patterned layer, said interlevel dielectric having at least one window having at least one side wall; then d) forming a bottom plate of the capacitor comprising a conductive second layer including a first metal in electrical contacting relation with said conductive first layer by depositing said first metal in said window such that a portion of said first metal is deposited on said at least one side wall and overlies said interlevel dielectric; e) forming a layer of capacitor dielectric in contact with said bottom plate of the capacitor, said first metal remaining on said at least one side wall of the window and overlying the interlevel dielectric when said capacitor dielectric layer is formed, and said capacitor dielectric not completely filling the window and at least partially defining therein a concave space; and f) forming a top plate of the capacitor comprising a conductive third layer including a second metal onto said capacitor dielectric and at least partially filling said concave space defined by the capacitor dielectric.

Claim 28

A method for fabricating a capacitor comprising: a) forming a dielectric layer on a substrate; b) forming a conductive first layer in contact with said dielectric layer; then c) depositing interlevel dielectric on said conductive first layer as a patterned layer, said interlevel dielectric having at least one window having at least one side wall; then d) forming a bottom plate of the capacitor comprising a conductive second layer including a first metal in electrical contacting relation with said conductive first layer by depositing said first metal in said window such that a portion of said first metal is deposited on said at least one side wall and overlies said interlevel dielectric; e) forming a layer of capacitor dielectric in contact with said bottom plate of the capacitor, said first metal remaining on said at least one side wall of the window and overlying the interlevel dielectric when said capacitor dielectric layer is formed, and said capacitor dielectric not completely filling the window and at least partially defining therein a concave space; and f) forming a top plate of the capacitor comprising a conductive third layer including a second metal onto said capacitor dielectric and at least partially filling said concave space defined by the capacitor dielectric.