Coating composition for glass

Claim 2

A gaseous composition at a temperature below about 200° C. at atmospheric pressure, adapted to deposit at least a first layer of tin oxide and silicon oxide onto glass at a rate of deposition greater than about 350 Å/sec. wherein the composition comprises a precursor of tin oxide, a precursor of silicon oxide of formula R m O n Si p , where m is from 3 to 8, n is from 1 to 4, p is from 1 to 4, and R is independently chosen from hydrogen and acyl, straight, cyclic, or branched-chain alkyl and substituted alkyl or alkenyl of from one to about six carbons, and phenyl or substituted phenyl, an accelerant selected from the group consisting of organic phosphites, organic borates and water, and mixtures thereof, and a source of oxygen.

Claim 3

The gaseous composition of claim 1, adapted to deposit at least a first layer comprising tin oxide and silicon oxide onto transparent flat glass at a temperature of from 450° to about 650° C.

Claim 4

The gaseous composition of claim 1, adapted to deposit at least a first layer comprising tin oxide and silicon oxide onto transparent flat glass to produce a glass article having essentially no reflected color in daylight.

Claim 5

The gaseous composition of claim 1 adapted to continuously deposit at least a first layer of tin oxide and silicon oxide onto a continuously moving transparent flat glass substrate.

Claim 6

The composition of claim 1 at a temperature below about 175° C.

Claim 7

The composition of claim 1 wherein the organic phosphite and organic borate accelerants have the formula (R"O) 3 P and (R"O) 3 B where R" is independently chosen from straight, cyclic or branched-chain alkyl or alkenyl of from one to about six carbons; phenyl, substituted phenyl, or R'" CH 2 CH 2 --, where R'" is MeO 2 C--, EtO 2 C--, CH 3 CO--, or HOOC--.

Claim 8

The composition of claim 1 wherein the precursor of the tin oxide is R n SnX 4-n , where R is a straight, cyclic, or branched-chain alkyl, or alkenyl of from one to about six carbons; phenyl, substituted phenyl, or R'CH 2 CH 2 --, where R' is MeO 2 C--, EtO 2 C--, CH 3 CO--, or HO 2 C--; X is selected from the group consisting of halogen, acetate, perfluoroacetate, and their mixtures; and where n is 0, 1, or 2.

Claim 9

The composition of claim 1 wherein the precursor of the tin oxide is an alkyltin halide.

Claim 10

The composition of claim 1 wherein the precursor of the tin oxide is an alkyltin chloride.

Claim 11

The composition of claim 1 wherein the precursor of the tin oxide is chosen from the group consisting of monobutylytin trichloride, dibutylytin dichloride, tributylytin chloride, and tin tetrachloride.

Claim 12

The composition of claim 1 wherein the precursor of silicon oxide is selected from the group consisting of tetraethylorthosilicate, diacetoxydi-t-butoxysilane, ethyltriacetoxysilane, methyltriacetoxysilane, methyldiacetoxylsilane, tetramethyldisiloxane, tetraramethylcyclotetrasiloxane, dipinacoloxysilane, 1,1-dimethylsila-2-oxacyclohexane, tetrakis (1-methoxy-2-propoxy) silane, and triethoxysilane.

Claim 13

The composition of claim 1 wherein the precursor of silicon oxide is tetraethylorthosilicate.

Claim 14

The composition of claim 1 wherein the accelerant comprises triethyl phosphite.

Claim 15

The composition of claim 1 wherein the accelerant comprises triethyl phosphite and triethyl borate.

Claim 16

The gaseous composition of claim 1 adapted to deposit at least a first layer of tin oxide and silicon oxide onto glass at a rate of deposition greater than about 400 Å/sec.

Claim 17

The gaseous composition of claim 1 adapted to deposit at least a first amorphous layer of tin oxide and silicon oxide onto glass.

Claim 18

The gaseous composition of claim 1 adapted to deposit a plurality of layers comprising tin oxide and silicon oxide onto glass, the outermost layer of which is further adapted for deposit of at least a second layer.

Claim 19

The composition of claim 17 adapted to deposit a plurality of layers comprising tin oxide and silicon oxide onto glass, the outermost layer of which is further adapted for deposit of a layer comprising tin oxide.

Claim 20

The composition of claim 17 adapted to deposit a plurality of layers comprising tin oxide and silicon oxide onto glass the outermost layer of which is further adapted for deposit of a layer comprising tin oxide and fluorine.

Claim 21

The composition of claim 17 wherein the second layer comprises a doped tin oxide.

Claim 22

The composition of claim 17 wherein said plurality of layers are deposited from a precursor mixture comprising monobutyltin trichloride, tetraethyl orthosilicate and triethyl phosphite.

Claim 23

The composition of claim 1 adapted to deposit at least a first layer comprising tin oxide and silicon oxide onto glass, said first layer having a refractive index which changes continuously between the glass substrate and the top of the layer.

Claim 24

A gaseous composition at a temperature below about 200° C. at atmospheric pressure, adapted to deposit at least a first amphorous layer comprising tin oxide and silicon oxide onto glass at a rate of deposition greater than about 400 Å/sec., the layer having a controlled index of refraction, wherein the composition comprises a tin oxide precursor, a silicon oxide precursor of formula R m O n Si p , where m is from 3 to 8, n is from 1 to 4, p is from 1 to 4, and R is independently chosen from hydrogen and acyl, straight, cyclic, or branched-chain alkyl and substituted alkyl or alkenyl of from one to about six carbons, and phenyl or substituted phenyl, and at least one accelerant chosen from the group consisting of boron and phosphorous esters and water.

Claim 25

A gaseous composition at a temperature below about 200° C. at atmospheric pressure, adapted to deposit at least a first amphorous layer comprising tin oxide and silicon oxide onto glass at a rate of deposition greater than about 400 Å/sec., the layer having a controlled index of refraction, wherein the composition comprises a tin oxide precursor, a silicon oxide precursor of formula R m O n Si p , where m is from 3 to 8, n is from 1 to 4, p is from 1 to 4, and R is independently chosen from hydrogen and acyl, straight, cyclic, or branched-chain alkyl and substituted alkyl or alkenyl of from one to about six carbons, and phenyl or substituted phenyl, and at least one accelerant chosen from the group consisting of boron and phosphorous esters and water.

Claim 26

The gaseous composition of claim 23 adapted to continuously deposit at least a first layer comprising tin oxide and silicon oxide onto a continuously moving flat glass substrate at a temperature of from about 450° to about 650° C., and comprising monobutyltin trichloride, tetraethyl orthosilicate and an accelerant.

Claim 27

A gaseous composition at a temperature below about 200° C. and at atmospheric pressure, adapted to deposit at least a first layer comprising amorphous tin oxide and silicon oxide onto glass at a temperature of front about 450° to 650° C. at a rate of deposition greater than about 350 Å/sec., wherein the composition comprises: a tin oxide precursor of formula R n SnX 4-n , where R is a straight, cyclic, or branched-chain alkyl, or alkenyl of from one to about six carbons; phenyl, substituted phenyl, or R'CH 2 CH 2 --, where R' is MeO 2 C--, EtO 2 C--, CH 3 CO--, or HO 2 C--; X is selected from the group consisting of halogen, acetate;, perfluoroacetate, and their mixtures; and where n is 0, 1, or2; a silicon oxide precursor of formula R m O n Si p , where m is from 3 to 8, n is from 1 to 4, p is from 1 to 4, and R is independently chosen from hydrogen and acyl, straight, cyclic, or branched-chain alkyl and substituted alkyl or alkenyl of from one to about six carbons, and phenyl or substituted phenyl; one or more accelerants selected from the group consisting of water and organic phosphites and organic borates of formula (R"O) 3 P and (R"O) 3 B where R" is independently chosen from straight, cyclic or branched-chain alkyl or alkenyl of from one to about six carbons; phenyl, substituted pheny, or R'" CH 2 CH 2 --, where R'" is MeO 2 C--, EtO 2 C--, CH 3 CO--, or HOOC--; and a source of oxygen.

Claim 28

A gaseous composition at a temperature below about 200° C. and at atmospheric pressure, adapted to deposit at least a first layer comprising amorphous tin oxide and silicon oxide onto glass at a temperature of front about 450° to 650° C. at a rate of deposition greater than about 350 Å/sec., wherein the composition comprises: a tin oxide precursor of formula R n SnX 4-n , where R is a straight, cyclic, or branched-chain alkyl, or alkenyl of from one to about six carbons; phenyl, substituted phenyl, or R'CH 2 CH 2 --, where R' is MeO 2 C--, EtO 2 C--, CH 3 CO--, or HO 2 C--; X is selected from the group consisting of halogen, acetate;, perfluoroacetate, and their mixtures; and where n is 0, 1, or2; a silicon oxide precursor of formula R m O n Si p , where m is from 3 to 8, n is from 1 to 4, p is from 1 to 4, and R is independently chosen from hydrogen and acyl, straight, cyclic, or branched-chain alkyl and substituted alkyl or alkenyl of from one to about six carbons, and phenyl or substituted phenyl; one or more accelerants selected from the group consisting of water and organic phosphites and organic borates of formula (R"O) 3 P and (R"O) 3 B where R" is independently chosen from straight, cyclic or branched-chain alkyl or alkenyl of from one to about six carbons; phenyl, substituted pheny, or R'" CH 2 CH 2 --, where R'" is MeO 2 C--, EtO 2 C--, CH 3 CO--, or HOOC--; and a source of oxygen.

Claim 29

A composition according to claim 25 in which the precursor of the tin oxide is an alkyltin halide, the precursor of the silicon oxide is tetraethylorthosilicate, diacetoxydi-t-butoxysilane, ethyltriacetoxysilane, methyltriacetoxysilane, methyldiacetoxylsilane, tetramethyldisiloxane, tetramethylcyclotetrasiloxane, dipinacoloxysilane, 1,1-dimethylsila-2-oxacyclohexane, tetrakis (1-methoxy-2-propoxy) silane, or triethoxysilane, and the accelerant comprises one or both of triethyl phosphite and triethyl borate.

Claim 30

A composition according to claim 26 in which the tin oxide precursor comprises monobutyltin trichloride, the silicon oxide precursor comprises tetraethyl orthosilicate and the accelerant comprises triethyl phosphite.