Patent US6967154B2 successfully refreshed from Google Patents.
US6967154B2
Expired / Lapsed
US
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Enhanced atomic layer deposition
Assignee: Round Rock Research LLC
•
Filing: 2002-08-26
•
Granted: 2005-11-22
•
Expires: 2022-08-26
Abstract
Abstract A method of enhanced atomic layer deposition is described. In an embodiment, the enhancement is the use of plasma. Plasma begins prior to flowing a second precursor into the chamber. The second precursor reacts with a prior precursor to deposit a layer on the substrate. In an embodiment, the layer includes at least one element from each of the first and second precursors. In an embodiment, the layer is TaN. In an embodiment, the precursors are TaF 5 and NH 3 . In an embodiment, the plasma begins during the purge gas flow between the pulse of first precursor and the pulse of second precursor. In an embodiment, the enhancement is thermal energy. In an embodiment, the thermal energy is greater than generally accepted for ALD (>300 degrees Celsius). The enhancement assists the reaction of the precursors to deposit a layer on a substrate.
Inventors
- 👤 Shuang Meng
- 👤 Garo J. Derderian
- 👤 Gurtej Singh Sandhu
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 00:52
CPC Classifications
H; H10; H10D; H10D64/00; H10D64/60; H10D64/66; H10D64/68; H10D64/681; C; C23; C23C; C23C16/00; C23C16/44; C23C16/455; C23C16/45523; C23C16/45525; C23C16/45527; C23C16/45536; C23C16/45542; C23C16/50; C23C16/515; H10D64/01; H10D64/013; H10D64/01302; H10D64/01332; H10D64/01336; H10D64/0134; H10D64/01342; H10D64/685; H10D64/691; H10D64/693; H10P; H10P14/00; H10P14/40; H10P14/42; H10P14/43; H10P14/432; H10W; H10W20/00; H10W20/01; H10W20/031; H10W20/032; H10W20/033; H10D1/00; H10D1/60; H10D1/68; H10D1/692; H10D1/696; H10D1/711; H10D1/712; H10D64/01344; H10P14/418; H10P14/60; H10P14/63; H10P14/6326; H10P14/6328; H10P14/6334; H10P14/6336; H10P14/6339; H10P14/69; H10P14/692; H10P14/6938; H10P14/6939; H10P14/69393
Claims Analysis
Total Claims: 69
Claim 1
Independent Claim
51 words
An atomic layer deposition method, comprising: flowing a first gas adjacent a substrate; purging the first gas with a purge gas; stopping flow of the purge gas; flowing a second gas adjacent the substrate after stopping flow of the purge gas; and starting a plasma during the purging the first gas.
Claim 2
Dependent Claim
51 words
An atomic layer deposition method, comprising: flowing a first gas adjacent a substrate; purging the first gas with a purge gas; stopping flow of the purge gas; flowing a second gas adjacent the substrate after stopping flow of the purge gas; and starting a plasma during the purging the first gas.
Claim 3
Dependent Claim
17 words
The method of claim 1 , wherein flowing the first gas includes flowing a gas containing tantalum.
Claim 4
Dependent Claim
19 words
The method of claim 2 , wherein flowing the first gas includes flowing a gas containing TaF 5 .
Claim 5
Dependent Claim
16 words
The method of claim 1 , wherein starting the plasma includes generating a radio frequency signal.
Claim 6
Dependent Claim
17 words
The method of claim 1 , wherein flowing the second gas includes flowing a gas containing nitrogen.
Claim 7
Dependent Claim
19 words
The method of claim 1 , wherein flowing the second gas include flowing a gas containing NH 3 .
Claim 8
Dependent Claim
39 words
An atomic layer deposition method, comprising: flowing a first gas adjacent a substrate; purging the first gas; flowing a second gas adjacent the substrate; and creating a plasma during purging the first gas and the flowing the second gas.
Claim 9
Dependent Claim
39 words
An atomic layer deposition method, comprising: flowing a first gas adjacent a substrate; purging the first gas; flowing a second gas adjacent the substrate; and creating a plasma during purging the first gas and the flowing the second gas.
Claim 10
Dependent Claim
16 words
The method of claim 7 , wherein flowing the first gas is free from a plasma.
Claim 11
Dependent Claim
17 words
The method of claim 7 , wherein creating the plasma includes starting a plasma during the purging.
Claim 12
Dependent Claim
21 words
The method of claim 9 , wherein creating the plasma includes ending the plasma during the flowing of the second gas.
Claim 13
Dependent Claim
21 words
The method of claim 7 , wherein creating the plasma includes ending the plasma during the flowing of the second gas.
Claim 14
Dependent Claim
53 words
An atomic layer deposition method, comprising: flowing a first gas adjacent a substrate; purging the first gas; flowing a second gas adjacent the substrate; and creating a plasma during purging the first gas and the flowing the second gas; and wherein flowing the first gas includes flowing a gas containing TaF 5 .
Claim 15
Dependent Claim
53 words
An atomic layer deposition method, comprising: flowing a first gas adjacent a substrate; purging the first gas; flowing a second gas adjacent the substrate; and creating a plasma during purging the first gas and the flowing the second gas; and wherein flowing the first gas includes flowing a gas containing TaF 5 .
Claim 16
Dependent Claim
19 words
The method of claim 7 , wherein flowing the first gas includes flowing a gas containing NH 3 .
Claim 17
Dependent Claim
90 words
An atomic layer deposition method, comprising: flowing a first gas containing a first compound adjacent a substrate; adhering a layer of the first compound to a surface of the substrate; purging the first gas; forming a plasma during the purging; flowing a second gas containing a second compound adjacent the substrate; continuing the plasma forming during the flowing of the second gas; reacting the second compound to the first compound on the surface of the substrate to form an atomic layer of a third compound; and purging the second gas.
Claim 18
Dependent Claim
90 words
An atomic layer deposition method, comprising: flowing a first gas containing a first compound adjacent a substrate; adhering a layer of the first compound to a surface of the substrate; purging the first gas; forming a plasma during the purging; flowing a second gas containing a second compound adjacent the substrate; continuing the plasma forming during the flowing of the second gas; reacting the second compound to the first compound on the surface of the substrate to form an atomic layer of a third compound; and purging the second gas.
Claim 19
Dependent Claim
15 words
The method of claim 14 , wherein purging the second gas includes ending the plasma.
Claim 20
Dependent Claim
17 words
The method of claim 14 , wherein the recited steps are repeated to form another atomic layer.
Claim 21
Dependent Claim
17 words
The method of claim 14 , wherein flowing the first gas includes flowing a gas containing tantalum.
Claim 22
Dependent Claim
17 words
The method of claim 17 , wherein flowing the second gas includes flowing a gas containing nitrogen.
Claim 23
Dependent Claim
21 words
The method of claim 14 , wherein continuing the plasma includes ending the plasma during the flowing of the second gas.
Claim 24
Independent Claim
86 words
A method, comprising: pulsing TaF 5 gas into a chamber containing a substrate; adhering a layer of TaF 5 to a surface of the substrate; flowing argon into the chamber to purge the TaF 5 gas; during flowing argon, turning on a power source to generate a plasma; pulsing NH 3 gas into the reaction chamber; continuing operation of the power source during part of pulsing NH 3 gas; and reacting the TaF 5 and NH 3 at the surface to form a TaN atomic layer.
Claim 25
Independent Claim
86 words
A method, comprising: pulsing TaF 5 gas into a chamber containing a substrate; adhering a layer of TaF 5 to a surface of the substrate; flowing argon into the chamber to purge the TaF 5 gas; during flowing argon, turning on a power source to generate a plasma; pulsing NH 3 gas into the reaction chamber; continuing operation of the power source during part of pulsing NH 3 gas; and reacting the TaF 5 and NH 3 at the surface to form a TaN atomic layer.
Claim 26
Dependent Claim
24 words
The method of claim 20 , wherein turning on the power source includes supplying 300 watts of radio frequency power to generate the plasma.
Claim 27
Dependent Claim
23 words
The method of claim 20 , wherein pulsing the TaF 5 includes flowing TaF 5 into the reaction chamber for about 1-2 seconds.
Claim 28
Dependent Claim
23 words
The method of claim 20 , wherein pulsing the NH 3 includes flowing NH 3 into the reaction chamber for about 4 seconds.
Claim 29
Dependent Claim
25 words
The method of claim 20 , wherein turning on the power source includes generating a plasma before NH 3 is flowed into the reaction chamber.
Claim 30
Dependent Claim
20 words
The method of claim 24 , wherein continuing operation of the power source includes disassociating the nitrogen from the hydrogen.
Claim 31
Dependent Claim
30 words
The method of claim 25 , wherein reacting the TaF 5 with the NH 3 includes reacting the TaF 5 with the disassociated nitrogen to form the TaN ALD film.
Claim 32
Independent Claim
70 words
A method of forming a barrier layer in an integrated circuit device, comprising: providing a layer of a first precursor gas on a substrate in a chamber according to atomic layer deposition; providing energy in the chamber for disassociating a material from a second precursor gas; after providing the energy supplying the second precursor gas; and reacting the first precursor gas with the disassociated material to form the barrier layer.
Claim 33
Independent Claim
70 words
A method of forming a barrier layer in an integrated circuit device, comprising: providing a layer of a first precursor gas on a substrate in a chamber according to atomic layer deposition; providing energy in the chamber for disassociating a material from a second precursor gas; after providing the energy supplying the second precursor gas; and reacting the first precursor gas with the disassociated material to form the barrier layer.
Claim 34
Independent Claim
86 words
A method of forming a barrier layer in an integrated circuit device, comprising: providing a layer of a first precursor gas on a substrate in a chamber according to atomic layer deposition: providing energy in the chamber for disassociating a material from a second precursor gas; after providing the energy supplying the second precursor gas; reacting the first precursor gas with the disassociated material to form the barrier layer; and wherein providing a layer of a first precursor gas includes providing TaF 5 on the substrate.
Claim 35
Independent Claim
86 words
A method of forming a barrier layer in an integrated circuit device, comprising: providing a layer of a first precursor gas on a substrate in a chamber according to atomic layer deposition: providing energy in the chamber for disassociating a material from a second precursor gas; after providing the energy supplying the second precursor gas; reacting the first precursor gas with the disassociated material to form the barrier layer; and wherein providing a layer of a first precursor gas includes providing TaF 5 on the substrate.
Claim 36
Dependent Claim
17 words
The method of claim 27 , wherein supplying the second precursor gas includes supplying NH 3 .
Claim 37
Dependent Claim
15 words
The method of claim 27 , wherein reacting includes forming TaN in the barrier layer.
Claim 38
Dependent Claim
15 words
The method of claim 27 , wherein the integrated circuit device is a memory cell.
Claim 39
Dependent Claim
14 words
The method of claim 27 , wherein the integrated circuit device is a transistor.
Claim 40
Dependent Claim
18 words
The method of claim 27 , wherein providing energy includes heating the chamber to about 400 degrees Celsius.
Claim 41
Dependent Claim
17 words
The method of claim 27 , wherein providing energy includes heating the substrate to 400 degrees Celsius.
Claim 42
Dependent Claim
17 words
The method of claim 27 , wherein providing energy includes creating a plasma in the reaction chamber.
Claim 43
Independent Claim
85 words
A method of forming a TaN layer, comprising: heating at least one of a reaction chamber and a substrate; flowing TaF 5 into the reaction chamber; leaving an amount of TaF 5 on the substrate according to atomic layer deposition; purging the ambient TaF 5 from the chamber; flowing SiH 4 into the chamber; flowing NH 3 into the chamber; and reacting the SiH 4 and NH 3 with the TaF 5 according to atomic layer deposition to form a TaN layer on the substrate.
Claim 44
Independent Claim
85 words
A method of forming a TaN layer, comprising: heating at least one of a reaction chamber and a substrate; flowing TaF 5 into the reaction chamber; leaving an amount of TaF 5 on the substrate according to atomic layer deposition; purging the ambient TaF 5 from the chamber; flowing SiH 4 into the chamber; flowing NH 3 into the chamber; and reacting the SiH 4 and NH 3 with the TaF 5 according to atomic layer deposition to form a TaN layer on the substrate.
Claim 45
Dependent Claim
23 words
The method of claim 36 , wherein heating includes maintaining the temperature at about 400 degrees Celsius during all of the recited steps.
Claim 46
Dependent Claim
20 words
The method of claim 36 , wherein reacting includes forming the TaN layer having a thickness of about 1.3 Angstroms.
Claim 47
Dependent Claim
20 words
The method of claim 36 , wherein reacting includes forming the TaN layer having a Ta:N ratio of about 1:1.
Claim 48
Dependent Claim
22 words
The method of claim 36 , wherein reacting includes forming the TaN layer to have Si impurities of about 1% to 2%.
Claim 49
Dependent Claim
22 words
The method of claim 36 , wherein reacting includes forming the TaN layer to have Si impurities of less than about 5%.
Claim 50
Dependent Claim
21 words
The method of claim 36 , wherein reacting includes forming the TaN layer to have a resistivity of about 2500 μOhms-cm.
Claim 51
Dependent Claim
25 words
The method of claim 36 , wherein heating includes heating the at least one of the chamber and the substrate to about 400 degrees Celsius.
Claim 52
Dependent Claim
28 words
The method of claim 36 , wherein flowing SiH 4 into the chamber and flowing NH 3 into the chamber occur at least partially at the same time.
Claim 53
Dependent Claim
25 words
The method of claim 36 , wherein flowing SiH 4 into the chamber and flowing NH 3 into the chamber occur at the same time.
Claim 54
Dependent Claim
22 words
The method of claim 36 , wherein flowing SiH 4 into the chamber and flowing NH 3 into the chamber occur sequentially.
Claim 55
Independent Claim
82 words
A method of forming a TaN layer, comprising: heating at least one of a reaction chamber and a substrate; flowing TaF 5 into the reaction chamber; leaving an amount of TaF 5 on the substrate according to atomic layer deposition; purging the ambient TaF 5 from the chamber; flowing SiH 4 and NH 3 into the chamber; and reacting the SiH 4 and NH 3 with the TaF 5 according to atomic layer deposition to form a TaN layer on the substrate.
Claim 56
Independent Claim
82 words
A method of forming a TaN layer, comprising: heating at least one of a reaction chamber and a substrate; flowing TaF 5 into the reaction chamber; leaving an amount of TaF 5 on the substrate according to atomic layer deposition; purging the ambient TaF 5 from the chamber; flowing SiH 4 and NH 3 into the chamber; and reacting the SiH 4 and NH 3 with the TaF 5 according to atomic layer deposition to form a TaN layer on the substrate.
Claim 57
Dependent Claim
25 words
The method of claim 47 , wherein heating includes heating the at least one of the chamber and the substrate to about 400 degrees Celsius.
Claim 58
Dependent Claim
23 words
The method of claim 47 , wherein heating includes maintaining the temperature at about 400 degrees Celsius during all of the recited steps.
Claim 59
Dependent Claim
20 words
The method of claim 47 , wherein reacting includes forming the TaN layer having a thickness of about 1.3 Angstroms.
Claim 60
Dependent Claim
20 words
The method of claim 47 , wherein reacting includes forming the TaN layer having a Ta:N ratio of about 1:1.
Claim 61
Dependent Claim
22 words
The method of claim 47 , wherein reacting includes forming the TaN layer to have Si impurities of about 1% to 2%.
Claim 62
Dependent Claim
22 words
The method of claim 47 , wherein reacting includes forming the TaN layer to have Si impurities of less than about 5%.
Claim 63
Dependent Claim
21 words
The method of claim 47 , wherein reacting includes forming the TaN layer to have a resistivity of about 2500 μOhms-cm.
Claim 64
Dependent Claim
16 words
The method of claim 1 , wherein the second gas is different from the purge gas.
Claim 65
Dependent Claim
18 words
The method of claim 1 , wherein the purge gas is inert with respect to the first gas.
Claim 66
Dependent Claim
37 words
An atomic layer deposition method, comprising: flowing a first gas, containing TaF 5, adjacent a substrate; purging the first gas; flowing a second gas adjacent the substrate; and starting a plasma during the purging the first gas.
Claim 67
Dependent Claim
37 words
An atomic layer deposition method, comprising: flowing a first gas, containing TaF 5, adjacent a substrate; purging the first gas; flowing a second gas adjacent the substrate; and starting a plasma during the purging the first gas.
Claim 68
Dependent Claim
22 words
The method of claim 57 , wherein flowing a second gas adjacent the substrate occurs after stopping flow of the purge gas.
Claim 69
Dependent Claim
30 words
The method of claim 57 , wherein starting the plasma includes generating a radio frequency signal, and wherein flowing the second gas include flowing a gas containing NH 3 .
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 2008-11-21 | 2009-05-23 | 2009-11-22 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2012-11-21 | 2013-05-23 | 2013-11-22 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2016-11-21 | 2017-05-23 | 2017-11-22 | $7700.00 | Window Closed / Lapsed |