US6444895B1
Expired / Lapsed
US
⏱️ 0.0 years remaining
Device and method for nondestructive inspection on semiconductor device
Assignee: NEC Electronics Corp
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Filing: 1999-09-24
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Granted: 2002-09-03
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Expires: 2019-09-24
Abstract
Abstract A nondestructive inspection device (or method) is basically configured such that a laser beam (1300 nm) is irradiated on a surface (or back) of a semiconductor device chip to scan. Due to irradiation of the laser beam, a defect position is heated to cause a thermoelectromotive current, which induces a magnetic field. A magnetic field detector such as SQUID detects a strength of the magnetic field, based on which a scan magnetic field image is produced. A display device superimposes the scan magnetic field image on a scan laser microphotograph on a screen, so it is possible to perform defect inspection on the semiconductor device chip. Incidentally, a semiconductor device wafer is constructed to include a thermoelectromotive force generator and its wires, which are electrically connected to first-layer wires. By irradiation of the laser beam on the thermoelectromotive force generator, it is possible to detect a short-circuit defect, which lies between the first-layer wires. Further, it is possible to perform nondestructive inspection on a semiconductor integrated circuit, which is in an intermediate stage of manufacture before formation of bonding pads and which includes a closed circuit configured by a first-layer wire, including a thermoelectromotive force generating defect, a circuit via and an inspection via as well as a metal film, which is formed in a relatively broad range of a surface area and is used to form a second-layer wire.
Inventors
- 👤 Kiyoshi Nikawa
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 01:01
CPC Classifications
H; H10; H10P; H10P74/00; G; G01; G01R; G01R31/00; G01R31/28; G01R31/302; G01R31/308; G01R31/311
Claims Analysis
Total Claims: 18
Claim 1
Independent Claim
103 words
A method for manufacturing a semiconductor device for nondestructive inspection, comprising the steps of: forming a first conductor on a substrate; forming a second conductor on the substrate in proximity to the first conductor; arranging a thermoelectromotive force generator being formed on the substrate; connecting a first end of the thermoelectromotive force generator to the first conductor by a first wire; and connecting a second end of the thermoelectromotive force generator to the second conductor by a second wire, wherein at least one of the first and second wires is composed of a plurality of wires, which are formed in different levels respectively.
Claim 2
Independent Claim
103 words
A method for manufacturing a semiconductor device for nondestructive inspection, comprising the steps of: forming a first conductor on a substrate; forming a second conductor on the substrate in proximity to the first conductor; arranging a thermoelectromotive force generator being formed on the substrate; connecting a first end of the thermoelectromotive force generator to the first conductor by a first wire; and connecting a second end of the thermoelectromotive force generator to the second conductor by a second wire, wherein at least one of the first and second wires is composed of a plurality of wires, which are formed in different levels respectively.
Claim 3
Dependent Claim
28 words
A method for manufacturing the semiconductor device according to claim 1 wherein the thermoelectromotive force generator is arranged in proximity to the first conductor and the second conductor.
Claim 4
Dependent Claim
52 words
A method for manufacturing the semiconductor device according to claim 1 wherein the first wire and the second wire are formed using a same material to be integrally connected to each other by way of the thermoelectromotive force generator, a width of which is made smaller than the first and second wires.
Claim 5
Dependent Claim
18 words
A method for manufacturing the semiconductor device according to claim 3 wherein the material corresponds to titanium silicide.
Claim 6
Dependent Claim
21 words
A method for manufacturing the semiconductor device according to claim 1 wherein the first and second conductors correspond to wires respectively.
Claim 7
Dependent Claim
51 words
A method for manufacturing the semiconductor device according to claim 1 wherein the first and second conductors are elongated on the substrate by way of an insulating layer, while the first and second wires and the thermoelectromotive force generator are formed on the insulating layer above the first and second conductors.
Claim 8
Dependent Claim
36 words
A method for manufacturing the semiconductor device according to claim 6 wherein the first and second conductors are respectively connected to the first and second wires by means of vias, which penetrate through the insulating layer.
Claim 9
Dependent Claim
43 words
A method for manufacturing the semiconductor device according to claim 1 wherein the first and second conductors are elongated straight in a same level such that an end of the first conductor is located in proximity to an end of the second conductor.
Claim 10
Dependent Claim
51 words
A method for manufacturing the semiconductor device according to claim 1 wherein at least one of the first and second conductors is elongated substantially in parallel with at least one of the first and second wires and is different from at least one of the first and second wires in width.
Claim 11
Dependent Claim
52 words
A method for manufacturing the semiconductor device according to claim 1 wherein the first and second conductors are elongated in a first direction and arranged in parallel with each other, while the first and second wires and the thermoelectromotive force generator are arranged along a second direction that crosses the first direction.
Claim 12
Dependent Claim
30 words
A method for manufacturing the semiconductor device according to claim 1 wherein first and second conductors are respectively connected to the first and second wires by way of inspection vias.
Claim 13
Dependent Claim
41 words
A method for manufacturing the semiconductor device according to claim 1 wherein the thermoelectromotive force generator is arranged in a level which is close to the substrate as compared with a level in which the first and second conductors are formed.
Claim 14
Dependent Claim
33 words
A method for manufacturing the semiconductor device according to claim 1 wherein at least one of the first and second wires are formed integrally together with one of the first and second conductors.
Claim 15
Dependent Claim
41 words
A method for manufacturing the semiconductor device according to claim 1 wherein the thermoelectromotive force generator is arranged at a position, at which a laser beam irradiated on a back of the substrate reaches without being interrupted by a structural element.
Claim 16
Dependent Claim
19 words
A method for manufacturing the semiconductor device according to claim 14 wherein the structural element corresponds to a wire.
Claim 17
Dependent Claim
61 words
A method for manufacturing the semiconductor device according to claim 1 wherein there are provided a plurality of thermoelectromotive force generators as and multiple pairs of conductors, each consisting of a pair of the first and second conductors, and wherein each thermoelectromotive force generator is located at a position related to each pair of the first and second conductors connected thereto.
Claim 18
Dependent Claim
74 words
A method for manufacturing the semiconductor device according to claim 1 wherein there are provided a plurality of thermoelectromotive force generators and multiple pairs of conductors, each consisting of a pair of the first and second conductors, all of which are arranged and aligned in lines, and wherein each thermoelectromotive force generator is connected to each pair of the first and second conductors whose place in an order is identical thereto or inverse thereto.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2005-09-02 | 2006-03-04 | 2006-09-03 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2009-09-02 | 2010-03-04 | 2010-09-03 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2013-09-02 | 2014-03-04 | 2014-09-03 | $7700.00 | Window Closed / Lapsed |