US6360685B1
Expired / Lapsed
US
⏱️ 0.0 years remaining
Sub-atmospheric chemical vapor deposition system with dopant bypass
Assignee: Applied Materials Inc
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Filing: 1998-05-05
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Granted: 2002-03-26
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Expires: 2018-05-05
Abstract
Abstract A sub-atmospheric chemical vapor deposition ("SACVD") system with a bypass from a dopant source to an exhaust system and related methods and devices. The flow of dopant may be established by dumping the dopant flow directly to the foreline of a vacuum exhaust system of an SACVD system, rather than flowing the dopant through the chamber. Establishing the dopant flow in this manner prior to the deposition of a silicon glass film on a substrate allows the initial portion of the silicon glass film to be doped at a higher level. Prior apparatus resulted in a dopant-deficient region of silicon glass formed before the dopant was fully flowing. In one embodiment, a doped silicon glass film is used as a dopant source for a semiconductor material, in another embodiment, a multi-layer doped silicon glass film achieves superior reflow.
Inventors
- 👤 Li-Qun Xia
- 👤 Ellie Yieh
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 01:03
CPC Classifications
C; C23; C23C; C23C16/00; C23C16/44; C23C16/4412; H; H10; H10P; H10P14/00; H10P14/60; H10P14/69; H10P14/692; H10P14/6921; H10P14/6922; H10P14/6923; C23C16/22; C23C16/30; C23C16/40; C23C16/401; C23C16/455; C23C16/46; C23C16/52; H10P14/63; H10P14/6326; H10P14/6328; H10P14/6334; H10P14/6336; H10P14/66; H10P14/662
Claims Analysis
Total Claims: 4
Claim 1
Independent Claim
254 words
A substrate processing apparatus, the apparatus comprising: a processing chamber; a gas delivery system configured to deliver a process gas to the processing chamber, the process gas including a dopant gas, and configured to selectively deliver the dopant gas to an exhaust system via a bypass, the exhaust system configured to provide a vacuum to the processing chamber and to exhaust gases from the apparatus, or to the processing chamber; a heating system conifigured to heat a substrate within the processing chamber; a controller configured to control the gas delivery system, the heating system, and the exhaust system; and a memory, coupled to the controller, comprising a computer-readable medium having a computer-readable program embodied therein for directing operation of the gas delivery system, the heating system, and the exhaust system, the computer-readable program including: (i) a first set of computer instructions for controlling the gas delivery system to flow the dopant gas to the exhaust system to establish a flow of the dopant gas via the bypass to the exhaust system; and (ii) a second set of computer instructions for controlling the gas delivery system to flow an oxygen source and deposition gas comprising a silicon source to the processing chamber, and to switch at least a portion of the flow of dopant gas from the exhaust system to the processing chamber, and to control the exhaust system to establish and maintain a pressure in the processing chamber appropriate for performing a chemical vapor deposition process of a doped silicon glass on the substrate.
Claim 2
Dependent Claim
254 words
A substrate processing apparatus, the apparatus comprising: a processing chamber; a gas delivery system configured to deliver a process gas to the processing chamber, the process gas including a dopant gas, and configured to selectively deliver the dopant gas to an exhaust system via a bypass, the exhaust system configured to provide a vacuum to the processing chamber and to exhaust gases from the apparatus, or to the processing chamber; a heating system conifigured to heat a substrate within the processing chamber; a controller configured to control the gas delivery system, the heating system, and the exhaust system; and a memory, coupled to the controller, comprising a computer-readable medium having a computer-readable program embodied therein for directing operation of the gas delivery system, the heating system, and the exhaust system, the computer-readable program including: (i) a first set of computer instructions for controlling the gas delivery system to flow the dopant gas to the exhaust system to establish a flow of the dopant gas via the bypass to the exhaust system; and (ii) a second set of computer instructions for controlling the gas delivery system to flow an oxygen source and deposition gas comprising a silicon source to the processing chamber, and to switch at least a portion of the flow of dopant gas from the exhaust system to the processing chamber, and to control the exhaust system to establish and maintain a pressure in the processing chamber appropriate for performing a chemical vapor deposition process of a doped silicon glass on the substrate.
Claim 3
Dependent Claim
36 words
The apparatus of claim 1 wherein the computer-readable program further includes a third set of computer instructions for controlling the heating system to heat the substrate during deposition of the doped silicon glass on the substrate.
Claim 4
Dependent Claim
45 words
The apparatus of claim 1 wherein the computer-readable program further includes a fourth set of computer instructions for controlling the heating system to heat the substrate to a temperature of at least about 600° C. after deposition of the doped silicon glass on the substrate.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2005-03-25 | 2005-09-24 | 2006-03-26 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2009-03-25 | 2009-09-24 | 2010-03-26 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2013-03-25 | 2013-09-24 | 2014-03-26 | $7700.00 | Window Closed / Lapsed |