EP0307995A2
Expired / Lapsed
EP
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Process and device for gas delivery to an epitaxy apparatus
Assignee: Radboud Universiteit Nijmegen
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Filing: 1988-09-02
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Granted: —
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Expires: 2008-09-02
Abstract
Abstract In order, in the epitaxial production of semiconductor products and of articles provided with a layer, to be able to make the junction between the layers applied to the substrates atomically sharp, it is important to be able to change the gas mixture, to be introduced into a pulsed reactor or MBE reactor, rapidly, accurately and without losses in respect of quantity and of composition. To this purpose, each of the gases to be introduced into the reactor (13) is conveyed to a separate gas pipette (9) and thereafter the content of the gas pipette is cyclically passed, by means of a pressure differential, into the pulse reactor, with the composition of the mixture being changed per one or more cycles.
Inventors
- 👤 Jaap Van Suchtelen
- 👤 Lodevicus Johannes Giling
- 👤 Josephus Emanual Maria Hogenkamp
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-09 01:20
CPC Classifications
C; C23; C23C; C23C16/00; C23C16/44; C23C16/455; C23C16/45523; B; B01; B01J; B01J4/00; B01J4/02; B01L; B01L3/00; B01L3/02; B01L3/0289; C23C16/45561; C30; C30B; C30B25/00; C30B25/02; C30B25/14; F; F23; F23C; F23C15/00; Y; Y10; Y10S; Y10S148/00; Y10S148/006; Y10S148/057; Y10S148/11; Y10S148/169; Y10S438/00; Y10S438/935
Claims Analysis
Total Claims: 18
Claim 1
Independent Claim
86 words
Process for the epitaxial production of semiconductor products or of articles provided with a layer, wherein a number of metered gases are passed into a pulsed reactor, in which reactor a decomposition of molecules, and depositions of atoms take place, characterized in that each of the said gases is fed to a separate gas pipette and thereafter the content of the gas pipette is passed cyclically, by pressure differential, into the pulsed reactor, with the composition of the mixture being changed per one or more cycles.
Claim 2
Dependent Claim
86 words
Process for the epitaxial production of semiconductor products or of articles provided with a layer, wherein a number of metered gases are passed into a pulsed reactor, in which reactor a decomposition of molecules, and depositions of atoms take place, characterized in that each of the said gases is fed to a separate gas pipette and thereafter the content of the gas pipette is passed cyclically, by pressure differential, into the pulsed reactor, with the composition of the mixture being changed per one or more cycles.
Claim 3
Dependent Claim
93 words
Process for the epitaxial production of semiconductor products, wherein a number of metered gases are passed into a molecular beam epitaxy reactor (MBE) in which reactor the pressure is brought to a value of ≦ about 10⁻⁶ mbar and molecular beams are directed onto the heated substrates, characterized in that each of the said gases is fed to a separate gas pipette and subsequently the content of the gas pipette is fed, by pressure differential, cyclically into the MBE reactor, with the composition of the mixture being changed per one or more cycles.
Claim 4
Dependent Claim
93 words
Process for the epitaxial production of semiconductor products, wherein a number of metered gases are passed into a molecular beam epitaxy reactor (MBE) in which reactor the pressure is brought to a value of ≦ about 10⁻⁶ mbar and molecular beams are directed onto the heated substrates, characterized in that each of the said gases is fed to a separate gas pipette and subsequently the content of the gas pipette is fed, by pressure differential, cyclically into the MBE reactor, with the composition of the mixture being changed per one or more cycles.
Claim 5
Dependent Claim
26 words
Process according to claim 1 or 2, characterized in that the component gases are mixed in a conjoint mixing chamber before being fed into the reactor.
Claim 6
Dependent Claim
25 words
Process according to one of the preceding claims, characterized in that the control range of the gas pipette is changed by adusting the input pressure.
Claim 7
Dependent Claim
115 words
Device for the epitaxial production of semiconductor products or of articles provided with a layer characterized by a number of gas pipettes (9) into each of which there opens a feedline (10) and an outlet line (8) for a gas, which outlet lines run to a conjoint chamber (3) with a shutoff valve (11 and 12 respectively) being mounted in each feedline and each outlet line, and there are provided means (4) for lowering the pressure in the reactor as well as control means for cyclically opening and closing the said valves (11,12) in such a way that the composition of the gas mixture in the reactor can be changed per one or more cycles.
Claim 8
Dependent Claim
115 words
Device for the epitaxial production of semiconductor products or of articles provided with a layer characterized by a number of gas pipettes (9) into each of which there opens a feedline (10) and an outlet line (8) for a gas, which outlet lines run to a conjoint chamber (3) with a shutoff valve (11 and 12 respectively) being mounted in each feedline and each outlet line, and there are provided means (4) for lowering the pressure in the reactor as well as control means for cyclically opening and closing the said valves (11,12) in such a way that the composition of the gas mixture in the reactor can be changed per one or more cycles.
Claim 9
Dependent Claim
36 words
Device according to Claim 5, characterized in that a mixing chamber (7) which is conjoint for all the outlet lines is provided in the connection between the said outlet lines (8) and the said reactor (13).
Claim 10
Dependent Claim
26 words
Device according to Claim 5 or 6, characterized in that a reducing valve is also provided in each of the feed lines (10) to the pipettes.
Claim 11
Dependent Claim
41 words
Device according to Claim 5, 6 or 7, characterized in that the gas pipettes consist of a length (10a) of a feed line (10) to which a cylinder (28), wherein a plunger (29) can be caused to travel, is attached laterally.
Claim 12
Dependent Claim
30 words
Device according to Claim 8, characterized in that a shutoff valve (11 and 12 respectively) is attached to both ends of the said lengths (10a) of the feed lines (10).
Claim 13
Dependent Claim
38 words
Device according to one of Claims 59, characterized in that each gas pipette is accomodated in a pipette block (14) and that a number of the blocks is arranged round the inlet side of the mixing chamber (7).
Claim 14
Dependent Claim
36 words
Device according to one of Claims 510, characterized in that the device is also provided with a bypass line (5) with shutoff valve (6) in order to be able to cause gases to bypass the reactor.
Claim 15
Dependent Claim
19 words
Device according to one of Claims 511, characterized in that the shutoff valves (2,11,12) are constructed as rocker valves.
Claim 16
Dependent Claim
48 words
Device according to Claim 12, characterized in that each of the rocker valves can be controlled by an electromagnet (27) and a microprocessor or programme switch is attached to the device in order to activate the electromagnets, and thus operate the valves, in accordance with a selected programme.
Claim 17
Dependent Claim
78 words
Mixing device for gases intended for the device according to one of Claims 513, characterized by a number of gas pipettes (9) into each of which opens a feed line (10) and an outlet line (8) for a gas, with a shutoff valve (11 and 12 respectively) being located in each feed line and each outlet line and in that control means for cyclically opening and closing the said valves (11, 12) in a programmed manner are provided.
Claim 18
Dependent Claim
52 words
Shutoff valve, in particular intended for the device according to Claims 12 and 13, characterized by a rocker axle (21) which is provided, at its inner end, with a valve body (22) and in its middle zone has a hinge axle (24) which is clamped on both sides between two rings (25).
References Cited (Backward Citations)
No citation records indexed.
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