US6573030B1 — Method for depositing an amorphous carbon layer

Claim 1

Independent Claim 83 words

A method of forming an amorphous carbon layer on a substrate comprising: positioning a substrate in a deposition chamber; providing a gas mixture to the deposition chamber, wherein the gas mixture comprises one or more hydrocarbon compounds and an inert gas; maintaining the deposition chamber at a pressure between about 1 Torr to about 20 Torr; and heating the gas mixture to thermally decompose the one or more hydrocarbon compounds in the gas mixture to form an amorphous carbon layer on the substrate.

Claim 2

Independent Claim 83 words

A method of forming an amorphous carbon layer on a substrate comprising: positioning a substrate in a deposition chamber; providing a gas mixture to the deposition chamber, wherein the gas mixture comprises one or more hydrocarbon compounds and an inert gas; maintaining the deposition chamber at a pressure between about 1 Torr to about 20 Torr; and heating the gas mixture to thermally decompose the one or more hydrocarbon compounds in the gas mixture to form an amorphous carbon layer on the substrate.

Claim 3

Dependent Claim 44 words

The method of claim 1 , wherein the one or more hydrocarbon compounds in the gas mixture have the general formula C x H y , wherein x has a range of 2 to 4 and y has a range of 2 to 10.

Claim 4

Dependent Claim 65 words

The method of claim 2 , wherein the one or more hydrocarbon compounds is selected from the group consisting of propylene (C 3 H 6 ), propyne (C 3 H 4 ), propane (C 3 H 8 ), butane (C 4 H 10 ), butylene (C 4 H 8 ), butadiene (C 4 H 6 ), acetylene (C 2 H 2 ) and combinations thereof.

Claim 5

Dependent Claim 26 words

The method of claim 1 , wherein the amorphous carbon layer has a carbon:hydrogen ratio in the range of about 10% hydrogen to about 60% hydrogen.

Claim 6

Dependent Claim 22 words

The method of claim 1 , wherein the inert gas is selected from the group consisting of helium, argon and combinations thereof.

Claim 7

Dependent Claim 15 words

The method of claim 1 , wherein the gas mixture further comprises an additive gas.

Claim 8

Dependent Claim 23 words

The method of claim 6 , wherein the additive gas is selected from the group consisting of ammonia, nitrogen, hydrogen, and combinations thereof.

Claim 9

Dependent Claim 22 words

The method of claim 1 , wherein the substrate is heated to a temperature between about 100° C. and about 500° C.

Claim 10

Dependent Claim 31 words

The method of claim 1 , wherein the gas mixture is provided to the deposition chamber at a flow rate in a range of about 50 sccm to about 500 sccm.

Claim 11

Dependent Claim 18 words

The method of claim 1 , wherein the gas mixture is heated by applying an electric field thereto.

Claim 12

Dependent Claim 20 words

The method of claim 10 , wherein the electric field applied the gas mixture is a radio frequency (RF) power.

Claim 13

Dependent Claim 25 words

The method of claim 11 , wherein the RF power is in a range of about 3 W/in 2 to about 20 W/in 2 .

Claim 14

Dependent Claim 25 words

The method of claim 1 , wherein the amorphous carbon layer has an index of refraction in the range of about 1.5 to about 1.9.

Claim 15

Dependent Claim 31 words

The method of claim 13 , wherein the amorphous carbon layer has an absorption coefficient in the range of about 0.1 to about 1.0, at wavelengths less than about 250 nm.

Claim 16

Independent Claim 134 words

A method of forming a device, comprising: forming one or more amorphous carbon layers on a substrate by providing a gas mixture to the deposition chamber, wherein the gas mixture comprises one or more hydrocarbon compounds and an inert gas, maintaining the deposition chamber at a pressure between about 1 Torr to about 20 Torr and heating the gas mixture to thermally decompose the one or more hydrocarbon compounds in the gas mixture to form the one or more amorphous carbon layers on the substrate; defining a pattern in at least one region of the one or more amorphous carbon layers; and transferring the pattern defined in the at least one region of the one or more amorphous carbon layers into the substrate using the one or more amorphous carbon layers as a mask.

Claim 17

Independent Claim 134 words

A method of forming a device, comprising: forming one or more amorphous carbon layers on a substrate by providing a gas mixture to the deposition chamber, wherein the gas mixture comprises one or more hydrocarbon compounds and an inert gas, maintaining the deposition chamber at a pressure between about 1 Torr to about 20 Torr and heating the gas mixture to thermally decompose the one or more hydrocarbon compounds in the gas mixture to form the one or more amorphous carbon layers on the substrate; defining a pattern in at least one region of the one or more amorphous carbon layers; and transferring the pattern defined in the at least one region of the one or more amorphous carbon layers into the substrate using the one or more amorphous carbon layers as a mask.

Claim 18

Dependent Claim 22 words

The method of claim 15 , further comprising the step of removing the one or more amorphous carbon layers from the substrate.

Claim 19

Dependent Claim 27 words

The method of claim 16 , wherein the one or more amorphous carbon layers are removed from the substrate using an ozone, oxygen, or NH 3 plasma.

Claim 20

Dependent Claim 17 words

The method of claim 15 , wherein the substrate has one or more material layers formed thereon.

Claim 21

Dependent Claim 104 words

The method of claim 15 , wherein definition of the pattern in the at least one region of the one or more amorphous carbon layers, comprises: forming a layer of energy sensitive resist material adjacent the one or more amorphous carbon layers; introducing an image of the pattern into the layer of energy sensitive resist material by exposing the energy sensitive resist material to patterned radiation; developing the image of the pattern introduced into the layer of energy sensitive resist material; and transferring the pattern through the one or more amorphous carbon layers using the layer of energy sensitive resist material as a mask.

Claim 22

Dependent Claim 91 words

The method of claim 19 , further comprising: forming an intermediate layer on the one or more amorphous carbon layers prior to forming the layer of energy sensitive resist thereon, introducing the image of a pattern therein, and developing the image of the pattern; transferring the image of the pattern developed in the layer of energy sensitive resist material through the intermediate layer using the energy sensitive resist material as a mask; and transferring the pattern through the one or more amorphous carbon layers using the intermediate layer as a mask.

Claim 23

Dependent Claim 19 words

The method of claim 19 , wherein the patterned radiation has a wavelength less than about 250 nanometers (nm).

Claim 24

Dependent Claim 24 words

The method of claim 15 , wherein the one or more amorphous carbon layers are anti-reflective coatings at wavelengths less than about 250 nm.

Claim 25

Dependent Claim 36 words

The method of claim 22 , wherein the one or more amorphous carbon layers each have an absorption coefficient in the range of about 0. 1 to about 1.0 at wavelengths less than about 250 nm.

Claim 26

Dependent Claim 28 words

The method of claim 23 , wherein the absorption coefficient varies across the thickness of the one or more amorphous carbon layers from about 0.1 to about 1.0.

Claim 27

Dependent Claim 29 words

The method of claim 22 , wherein the one or more amorphous carbon layers each have an index of refraction in the range of about 1.5 to about 1.9.

Claim 28

Dependent Claim 79 words

The method of claim 15 , wherein the one or more amorphous carbon layers are formed on the substrate by positioning the substrate in a deposition chamber; providing a gas mixture to the deposition chamber, wherein the gas mixture comprises one or more hydrocarbon compounds and an inert gas; and heating the gas mixture to thermally decompose the one or more hydrocarbon compounds in the gas mixture to form the one or more amorphous carbon layers on the substrate.

Claim 29

Dependent Claim 44 words

The method of claim 26 , wherein the one or more hydrocarbon compounds in the gas mixture have the general formula C x H y , wherein x has a range of 2 to 4 and y has a range of 2 to 10.

Claim 30

Dependent Claim 65 words

The method of claim 27 , wherein the one or more hydrocarbon compounds is selected from the group consisting of propylene (C 3 H 6 ), propyne (C 3 H 4 ), propane (C 3 H 8 ), butane (C 4 H 10 ), butylene (C 4 H 8 ), butadiene (C 4 H 6 ), acetylene (C 2 H 2 ) and combinations thereof.

Claim 31

Dependent Claim 30 words

The method of claim 26 , wherein the one or more amorphous carbon layers each have a carbon:hydrogen ratio in the range of about 10% hydrogen to about 60% hydrogen.

Claim 32

Dependent Claim 22 words

The method of claim 26 , wherein the inert gas is selected from the group consisting of helium, argon and combinations thereof.

Claim 33

Dependent Claim 15 words

The method of claim 26 , wherein the gas mixture further comprises an additive gas.

Claim 34

Dependent Claim 23 words

The method of claim 31 , wherein the additive gas is selected from the group consisting of ammonia, nitrogen, hydrogen, and combinations thereof.

Claim 35

Dependent Claim 22 words

The method of claim 26 , wherein the substrate is heated to a temperature between about 100° C. and about 500° C.

Claim 36

Dependent Claim 31 words

The method of claim 26 , wherein the gas mixture is provided to the deposition chamber at a flow rate in a range of about 50 sccm to about 500 sccm.

Claim 37

Dependent Claim 18 words

The method of claim 26 , wherein the gas mixture is heated by applying an electric field thereto.

Claim 38

Dependent Claim 21 words

The method of claim 35 , wherein the electric field applied to the gas mixture is a radio frequency (RF) power.

Claim 39

Dependent Claim 25 words

The method of claim 36 , wherein the RF power is in a range of about 3 W/in 2 to about 20 W/in 2 .

Claim 40

Dependent Claim 29 words

The method of claim 15 , wherein the one or more amorphous carbon layers each have a thickness in the range of about 50 Å to about 1500 Å.

Claim 41

Independent Claim 225 words

A method of forming a device, comprising: forming one or more amorphous carbon layers on a substrate by providing a gas mixture to the deposition chamber, wherein the gas mixture comprises one or more hydrocarbon compounds and an inert gas, maintaining the deposition chamber at a pressure between about 1 Torr to about 20 Torr and heating the gas mixture to thermally decompose the one or more hydrocarbon compounds in the gas mixture to form the one or more amorphous carbon layers on the substrate; forming an intermediate layer on the one or more amorphous carbon layers, wherein the intermediate layer is an oxide; forming a first layer of energy sensitive resist material on the intermediate layer; introducing an image of a pattern into the layer of energy sensitive resist material by exposing the energy sensitive resist material to patterned radiation; developing the image of the pattern introduced into the layer of energy sensitive resist material; transferring the pattern to the intermediate layer using the layer of energy sensitive resist material as a mask; transferring the pattern through the one or more amorphous carbon layers using the intermediate layer as a mask; and transferring the pattern defined in the at least one region of the one or more amorphous carbon layers into the substrate using the one or more amorphous carbon layers as a mask.

Claim 42

Independent Claim 225 words

A method of forming a device, comprising: forming one or more amorphous carbon layers on a substrate by providing a gas mixture to the deposition chamber, wherein the gas mixture comprises one or more hydrocarbon compounds and an inert gas, maintaining the deposition chamber at a pressure between about 1 Torr to about 20 Torr and heating the gas mixture to thermally decompose the one or more hydrocarbon compounds in the gas mixture to form the one or more amorphous carbon layers on the substrate; forming an intermediate layer on the one or more amorphous carbon layers, wherein the intermediate layer is an oxide; forming a first layer of energy sensitive resist material on the intermediate layer; introducing an image of a pattern into the layer of energy sensitive resist material by exposing the energy sensitive resist material to patterned radiation; developing the image of the pattern introduced into the layer of energy sensitive resist material; transferring the pattern to the intermediate layer using the layer of energy sensitive resist material as a mask; transferring the pattern through the one or more amorphous carbon layers using the intermediate layer as a mask; and transferring the pattern defined in the at least one region of the one or more amorphous carbon layers into the substrate using the one or more amorphous carbon layers as a mask.

Claim 43

Dependent Claim 22 words

The method of claim 39 , further comprising the step of removing the one or more amorphous carbon layers from the substrate.

Claim 44

Dependent Claim 27 words

The method of claim 40 , wherein the one or more amorphous carbon layers are removed from the substrate using an ozone, oxygen, or NH 3 plasma.

Claim 45

Dependent Claim 17 words

The method of claim 39 , wherein the substrate has one or more material layers formed thereon.

Claim 46

Dependent Claim 27 words

The method of claim 39 , wherein the oxide is selected from the group consisting of silicon dioxide, silicon nitride, silicon oxynitride, silicon carbide, and amorphous silicon.

Claim 47

Dependent Claim 24 words

The method of claim 39 , wherein the one or more amorphous carbon layers are anti-reflective coatings at wavelengths less than about 250 nm.

Claim 48

Dependent Claim 29 words

The method of claim 44 , wherein the one or more amorphous carbon layers each have an index of refraction in the range of about 1.5 to about 1.9.

Claim 49

Dependent Claim 35 words

The method of claim 44 , wherein the one or more amorphous carbon layers each have an absorption coefficient in the range of about 0.1 to about 1.0 at wavelengths less than about 250 nm.

Claim 50

Dependent Claim 28 words

The method of claim 46 , wherein the absorption coefficient varies across the thickness of the one or more amorphous carbon layers from about 0.1 to about 1.0.

Claim 51

Independent Claim 102 words

A method of forming a device, comprising: forming one or more amorphous carbon layers on a substrate by providing a gas mixture to the deposition chamber, wherein the gas mixture comprises one or more hydrocarbon compounds and an inert gas, maintaining the deposition chamber at a pressure between about 1 Torr to about 20 Torr and heating the gas mixture to thermally decompose the one or more hydrocarbon compounds in the gas mixture to form the one or more amorphous carbon layers on the substrate; and defining a pattern in at least one region of the one or more amorphous carbon layers.

Claim 52

Independent Claim 102 words

A method of forming a device, comprising: forming one or more amorphous carbon layers on a substrate by providing a gas mixture to the deposition chamber, wherein the gas mixture comprises one or more hydrocarbon compounds and an inert gas, maintaining the deposition chamber at a pressure between about 1 Torr to about 20 Torr and heating the gas mixture to thermally decompose the one or more hydrocarbon compounds in the gas mixture to form the one or more amorphous carbon layers on the substrate; and defining a pattern in at least one region of the one or more amorphous carbon layers.

Claim 53

Dependent Claim 40 words

The method of claim 48 , further comprising transferring the pattern defined in the at least one region of the one or more amorphous carbon layers into the substrate using the one or more amorphous carbon layers as a mask.

Claim 54

Dependent Claim 22 words

The method of claim 49 , further comprising the step of removing the one or more amorphous carbon layers from the substrate.

Claim 55

Dependent Claim 27 words

The method of claim 50 , wherein the one or more amorphous carbon layers are removed from the substrate using an ozone, oxygen, or NH 3 plasma.

Claim 56

Dependent Claim 17 words

The method of claim 48 , wherein the substrate has one or more material layers formed thereon.

Claim 57

Dependent Claim 104 words

The method of claim 48 , wherein definition of the pattern in the at least one region of the one or more amorphous carbon layers, comprises: forming a layer of energy sensitive resist material adjacent the one or more amorphous carbon layers; introducing an image of the pattern into the layer of energy sensitive resist material by exposing the energy sensitive resist material to patterned radiation; developing the image of the pattern introduced into the layer of energy sensitive resist material; and transferring the pattern through the one or more amorphous carbon layers using the layer of energy sensitive resist material as a mask.

Claim 58

Dependent Claim 91 words

The method of claim 53 , further comprising: forming an intermediate layer on the one or more amorphous carbon layers prior to forming the layer of energy sensitive resist thereon, introducing the image of a pattern therein, and developing the image of the pattern; transferring the image of the pattern developed in the layer of energy sensitive resist material through the intermediate layer using the energy sensitive resist material as a mask; and transferring the pattern through the one or more amorphous carbon layers using the intermediate layer as a mask.

Claim 59

Dependent Claim 13 words

The method of claim 54 , wherein the intermediate layer is an oxide.

Claim 60

Dependent Claim 27 words

The method of claim 55 , wherein the oxide is selected from the group consisting of silicon dioxide, silicon nitride, silicon oxynitride, silicon carbide, and amorphous silicon.

Claim 61

Dependent Claim 19 words

The method of claim 53 , wherein the patterned radiation has a wavelength less than about 250 nanometers (nm).

Claim 62

Dependent Claim 24 words

The method of claim 48 , wherein the one or more amorphous carbon layers are anti-reflective coatings at wavelengths less than about 250 nm.

Claim 63

Dependent Claim 35 words

The method of claim 58 , wherein the one or more amorphous carbon layers each have an absorption coefficient in the range of about 0.1 to about 1.0 at wavelengths less than about 250 nm.

Claim 64

Dependent Claim 28 words

The method of claim 59 , wherein the absorption coefficient varies across the thickness of the one or more amorphous carbon layers from about 0.1 to about 1.0.

Claim 65

Dependent Claim 29 words

The method of claim 58 , wherein the one or more amorphous carbon layers each have an index of refraction in the range of about 1.5 to about 1.9.

Claim 66

Dependent Claim 44 words

The method of claim 48 , wherein the one or more hydrocarbon compounds in the gas mixture have the general formula C x H y , wherein x has a range of 2 to 4 and y has a range of 2 to 10.

Claim 67

Dependent Claim 65 words

The method of claim 62 , wherein the one or more hydrocarbon compounds is selected from the group consisting of propylene (C 3 H 6 ), propyne (C 3 H 4 ), propane (C 3 H 8 ), butane (C 4 H 10 ), butylene (C 4 H 8 ), butadiene (C 4 H 6 ), acetylene (C 2 H 2 ) and combinations thereof.

Claim 68

Dependent Claim 30 words

The method of claim 48 , wherein the one or more amorphous carbon layers each have a carbon:hydrogen ratio in the range of about 10% hydrogen to about 60% hydrogen.

Claim 69

Dependent Claim 22 words

The method of claim 48 , wherein the inert gas is selected from the group consisting of helium, argon and combinations thereof.

Claim 70

Dependent Claim 15 words

The method of claim 48 , wherein the gas mixture further comprises an additive gas.

Claim 71

Dependent Claim 23 words

The method of claim 66 , wherein the additive gas is selected from the group consisting of ammonia, nitrogen, hydrogen, and combinations thereof.

Claim 72

Dependent Claim 21 words

The method of claim 67 , wherein the electric field applied to the gas mixture is a radio frequency (RF) power.

Claim 73

Dependent Claim 25 words

The method of claim 68 , wherein the RF power is in a range of about 3 W/in 2 to about 20 W/in 2 .

Claim 74

Dependent Claim 22 words

The method of claim 48 , wherein the substrate is heated to a temperature between about 100° C. and about 500° C.

Claim 75

Dependent Claim 31 words

The method of claim 48 , wherein the gas mixture is provided to the deposition chamber at a flow rate in a range of about 50 sccm to about 500 sccm.

Claim 76

Dependent Claim 18 words

The method of claim 48 , wherein the gas mixture is heated by applying an electric field thereto.

Claim 77

Dependent Claim 29 words

The method of claim 48 , wherein the one or more amorphous carbon layers each have a thickness in the range of about 50 Å to about 1500 Å.

Claim 78

Independent Claim 166 words

A method of fabricating a damascene structure, comprising: forming a dielectric layer on a substrate, wherein the dielectric layer has a dielectric constant less than about 4.5; forming an amorphous carbon layer on the dielectric layer by positioning the substrate in a deposition chamber, wherein the substrate has a dielectric layer thereon, maintaining the deposition chamber at a pressure between about 1 Torr to about 20 Torr, providing a gas mixture to the deposition chamber, wherein the gas mixture comprises one or more hydrocarbon compounds and an inert gas, and heating the gas mixture to thermally decompose the one or more hydrocarbon compounds in the gas mixture to form the amorphous carbon layer on the dielectric layer; patterning the amorphous carbon layer to define contacts/vias therethrough; transferring the pattern formed in the amorphous carbon layer through the dielectric layer to form contacts/vias therein; removing the amorphous carbon layer from the patterned dielectric layer; and filling the contacts/vias formed in the dielectric layer with a conductive material.

Claim 79

Independent Claim 166 words

A method of fabricating a damascene structure, comprising: forming a dielectric layer on a substrate, wherein the dielectric layer has a dielectric constant less than about 4.5; forming an amorphous carbon layer on the dielectric layer by positioning the substrate in a deposition chamber, wherein the substrate has a dielectric layer thereon, maintaining the deposition chamber at a pressure between about 1 Torr to about 20 Torr, providing a gas mixture to the deposition chamber, wherein the gas mixture comprises one or more hydrocarbon compounds and an inert gas, and heating the gas mixture to thermally decompose the one or more hydrocarbon compounds in the gas mixture to form the amorphous carbon layer on the dielectric layer; patterning the amorphous carbon layer to define contacts/vias therethrough; transferring the pattern formed in the amorphous carbon layer through the dielectric layer to form contacts/vias therein; removing the amorphous carbon layer from the patterned dielectric layer; and filling the contacts/vias formed in the dielectric layer with a conductive material.

Claim 80

Dependent Claim 21 words

The method of claim 74 , wherein the conductive material filling the contacts/vias has a resistivity less than about 5 μΩ-cm.

Claim 81

Dependent Claim 22 words

The method of claim 74 , wherein the dielectric layer is selected from the group consisting of silicon dioxide and fluorosilicate glass.

Claim 82

Dependent Claim 26 words

The method of claim 74 , wherein the conductive material filling the contacts/vias is selected from the group consisting of copper, aluminum, tungsten, and combinations thereof.

Claim 83

Dependent Claim 44 words

The method of claim 74 , wherein the one or more hydrocarbon compounds in the gas mixture have the general formula C x H y , wherein x has a range of 2 to 4 and y has a range of 2 to 10.

Claim 84

Dependent Claim 66 words

The method of claim 78 , wherein the one or more hydrocarbon compounds is selected from the group consisting of propylene (C 3 H 6 ), propyne (C 3 H 4 ), propane (C 3 H 8 ), butane (C 4 H 10 ), butylene (C 4 H 8 ), butadiene (C 4 H 6 ), or acetelyne (C 2 H 2 ) and combinations thereof.

Claim 85

Dependent Claim 26 words

The method of claim 74 , wherein the amorphous carbon layer has a carbon:hydrogen ratio in the range of about 10% hydrogen to about 60% hydrogen.

Claim 86

Dependent Claim 22 words

The method of claim 74 , wherein the inert gas is selected from the group consisting of helium, argon and combinations thereof.

Claim 87

Dependent Claim 15 words

The method of claim 74 , wherein the gas mixture further comprises an additive gas.

Claim 88

Dependent Claim 23 words

The method of claim 82 , wherein the additive gas is selected from the group consisting of ammonia, nitrogen, hydrogen, and combinations thereof.

Claim 89

Dependent Claim 22 words

The method of claim 74 , wherein the substrate is heated to a temperature between about 100° C. and about 500° C.

Claim 90

Dependent Claim 31 words

The method of claim 74 , wherein the gas mixture is provided to the deposition chamber at a flow rate in a range of about 50 sccm to about 500 sccm.

Claim 91

Dependent Claim 18 words

The method of claim 74 , wherein the gas mixture is heated by applying an electric field thereto.

Claim 92

Dependent Claim 21 words

The method of claim 86 , wherein the electric field applied to the gas mixture is a radio frequency (RF) power.

Claim 93

Dependent Claim 25 words

The method of claim 87 , wherein the RF power is in a range of about 3 W/in 2 to about 20 W/in 2 .

Claim 94

Dependent Claim 25 words

The method of claim 74 , wherein the amorphous carbon layer has a thickness in the range of about 200 Å to about 1000 Å.

Claim 95

Independent Claim 85 words

A method of forming an amorphous carbon layer on a substrate comprising: positioning a substrate in a deposition chamber; providing a gas mixture to the deposition chamber, wherein the gas mixture comprises one or more hydrocarbon compounds and an inert gas; maintaining the deposition chamber at a pressure between about 1 Torr to about 20 Torr; and generating a plasma of the gas mixture to decompose the one or more hydrocarbon compounds in the gas mixture to form an amorphous carbon layer on the substrate.

Claim 96

Independent Claim 85 words

A method of forming an amorphous carbon layer on a substrate comprising: positioning a substrate in a deposition chamber; providing a gas mixture to the deposition chamber, wherein the gas mixture comprises one or more hydrocarbon compounds and an inert gas; maintaining the deposition chamber at a pressure between about 1 Torr to about 20 Torr; and generating a plasma of the gas mixture to decompose the one or more hydrocarbon compounds in the gas mixture to form an amorphous carbon layer on the substrate.

Claim 97

Dependent Claim 44 words

The method of claim 90 , wherein the one or more hydrocarbon compounds in the gas mixture have the general formula C x H y , wherein x has a range of 2 to 4 and y has a range of 2 to 10.

Claim 98

Dependent Claim 65 words

The method of claim 91 , wherein the one or more hydrocarbon compounds is selected from the group consisting of propylene (C 3 H 6 ), propyne (C 3 H 4 ), propane (C 3 H 8 ), butane (C 4 H 10 ), butylene (C 4 H 8 ), butadiene (C 4 H 6 ), acetylene (C 2 H 2 ) and combinations thereof.

Claim 99

Dependent Claim 26 words

The method of claim 90 , wherein the amorphous carbon layer has a carbon:hydrogen ratio in the range of about 10% hydrogen to about 60% hydrogen.

Claim 100

Dependent Claim 22 words

The method of claim 90 , wherein the inert gas is selected from the group consisting of helium, argon and combinations thereof.

Claim 101

Dependent Claim 15 words

The method of claim 90 , wherein the gas mixture further comprises an additive gas.

Claim 102

Dependent Claim 23 words

The method of claim 95 , wherein the additive gas is selected from the group consisting of ammonia, nitrogen, hydrogen, and combinations thereof.

Claim 103

Dependent Claim 22 words

The method of claim 90 , wherein the substrate is heated to a temperature between about 100° C. and about 500° C.

Claim 104

Dependent Claim 31 words

The method of claim 90 , wherein the gas mixture is provided to the deposition chamber at a flow rate in a range of about 50 sccm to about 500 sccm.

Claim 105

Dependent Claim 34 words

The method of claim 90 , wherein generating a plasma comprises applying a radio frequency (RF) power in a range of about 3 W/in 2 to about 20 W/in 2 to the processing chamber.

Claim 106

Dependent Claim 25 words

The method of claim 90 , wherein the amorphous carbon layer has an index of refraction in the range of about 1.5 to about 1.9.

Claim 107

Dependent Claim 31 words

The method of claim 100 , wherein the amorphous carbon layer has an absorption coefficient in the range of about 0.1 to about 1.0, at wavelengths less than about 250 nm.

Claim 108

Dependent Claim 25 words

The method of claim 101 , wherein the absorption coefficient varies across the thickness of the amorphous carbon layer from about 0.1 to about 1.0.

Claim 109

Dependent Claim 21 words

The method of claim 90 , further comprising defining a pattern in at least one region of the amorphous carbon layer.

Claim 110

Dependent Claim 34 words

The method of claim 103 , further comprising transferring the pattern defined in the at least one region of the amorphous carbon layer into the substrate using the amorphous carbon layer as a mask.

Claim 111

Dependent Claim 19 words

The method of claim 104 , further comprising the step of removing the amorphous carbon layer from the substrate.

Claim 112

Dependent Claim 17 words

The method of claim 103 , wherein the substrate has one or more material layers formed thereon.

Claim 113

Dependent Claim 94 words

The method of claim 103 , wherein defining the pattern in the at least one region of the amorphous carbon layer comprises: forming a layer of energy sensitive resist material adjacent the amorphous carbon layer; introducing an image of the pattern into the layer of energy sensitive resist material by exposing the energy sensitive resist material to patterned radiation; developing the image of the pattern introduced into the layer of energy sensitive resist material; and transferring the pattern through the amorphous carbon layer using the layer of energy sensitive resist material as a mask.

Claim 114

Dependent Claim 85 words

The method of claim 107 , further comprising: forming an intermediate layer on the amorphous carbon layer prior to forming the layer of energy sensitive resist thereon, introducing the image of a pattern therein, and developing the image of the pattern; transferring the image of the pattern developed in the layer of energy sensitive resist material through the intermediate layer using the energy sensitive resist material as a mask; and transferring the pattern through the amorphous carbon layer using the intermediate layer as a mask.

Claim 115

Dependent Claim 13 words

The method of claim 108 , wherein the intermediate layer is an oxide.

Claim 116

Dependent Claim 27 words

The method of claim 109 , wherein the oxide is selected from the group consisting of silicon dioxide, silicon nitride, silicon oxynitride, silicon carbide, and amorphous silicon.

Claim 117

Dependent Claim 19 words

The method of claim 107 , wherein the patterned radiation has a wavelength less than about 250 nanometers (nm).

Claim 118

Dependent Claim 24 words

The method of claim 103 , wherein the amorphous carbon layer is removed from the substrate using an ozone, oxygen, or NH 3 plasma.

Claim 119

Dependent Claim 21 words

The method of claim 103 , wherein the amorphous carbon layer is anti-reflective coatings at wavelengths less than about 250 nm.

Claim 120

Dependent Claim 25 words

The method of claim 90 , wherein the amorphous carbon layer has a thickness in the range of about 50 Å to about 1500 Å.

Claim 121

Independent Claim 155 words

A method of fabricating a damascene structure, comprising: forming a dielectric layer on a substrate; forming an amorphous carbon layer on the dielectric layer by positioning the substrate in a deposition chamber, wherein the substrate has a dielectric layer thereon, providing a gas mixture to the deposition chamber, wherein the gas mixture comprises one or more hydrocarbon compounds and an inert gas, maintaining the deposition chamber at a pressure between about 1 Torr to about 20 Torr, and generating a plasma of the gas mixture to decompose the one or more hydrocarbon compounds in the gas mixture to form an amorphous carbon layer on the substrate; patterning the amorphous carbon layer to define contacts/vias therethrough; transferring the pattern formed in the amorphous carbon layer through the dielectric layer to form contacts/vias therein; removing the amorphous carbon layer from the patterned dielectric layer; and filling the contacts/vias formed in the dielectric layer with a conductive material.

Claim 122

Independent Claim 155 words

A method of fabricating a damascene structure, comprising: forming a dielectric layer on a substrate; forming an amorphous carbon layer on the dielectric layer by positioning the substrate in a deposition chamber, wherein the substrate has a dielectric layer thereon, providing a gas mixture to the deposition chamber, wherein the gas mixture comprises one or more hydrocarbon compounds and an inert gas, maintaining the deposition chamber at a pressure between about 1 Torr to about 20 Torr, and generating a plasma of the gas mixture to decompose the one or more hydrocarbon compounds in the gas mixture to form an amorphous carbon layer on the substrate; patterning the amorphous carbon layer to define contacts/vias therethrough; transferring the pattern formed in the amorphous carbon layer through the dielectric layer to form contacts/vias therein; removing the amorphous carbon layer from the patterned dielectric layer; and filling the contacts/vias formed in the dielectric layer with a conductive material.

Claim 123

Dependent Claim 18 words

The method of claim 115 , wherein the dielectric layer has a dielectric constant less than about 4.5.

Claim 124

Dependent Claim 21 words

The method of claim 115 , wherein the conductive material filling the contacts/vias has a resistivity less than about 5 μΩ-cm.

Claim 125

Dependent Claim 22 words

The method of claim 115 , wherein the dielectric layer is selected from the group consisting of silicon dioxide and fluorosilicate glass.

Claim 126

Dependent Claim 26 words

The method of claim 115 , wherein the conductive material filling the contacts/vias is selected from the group consisting of copper, aluminum, tungsten, and combinations thereof.

Claim 127

Dependent Claim 44 words

The method of claim 115 , wherein the one or more hydrocarbon compounds in the gas mixture have the general formula C x H y , wherein x has a range of 2 to 4 and y has a range of 2 to 10.

Claim 128

Dependent Claim 65 words

The method of claim 115 , wherein the one or more hydrocarbon compounds is selected from the group consisting of propylene (C 3 H 6 ), propyne (C 3 H 4 ), propane (C 3 H 8 ), butane (C 4 H 10 ), butylene (C 4 H 8 ), butadiene (C 4 H 6 ), acetylene (C 2 H 2 ) and combinations thereof.

Claim 129

Dependent Claim 26 words

The method of claim 115 , wherein the amorphous carbon layer has a carbon:hydrogen ratio in the range of about 10% hydrogen to about 60% hydrogen.

Claim 130

Dependent Claim 22 words

The method of claim 115 , wherein the inert gas is selected from the group consisting of helium, argon and combinations thereof.

Claim 131

Dependent Claim 15 words

The method of claim 115 , wherein the gas mixture further comprises an additive gas.

Claim 132

Dependent Claim 23 words

The method of claim 124 , wherein the additive gas is selected from the group consisting of ammonia, nitrogen, hydrogen, and combinations thereof.

Claim 133

Dependent Claim 22 words

The method of claim 115 , wherein the substrate is heated to a temperature between about 100° C. and about 500° C.

Claim 134

Dependent Claim 31 words

The method of claim 115 , wherein the gas mixture is provided to the deposition chamber at a flow rate in a range of about 50 sccm to about 500 sccm.

Claim 135

Dependent Claim 34 words

The method of claim 115 , wherein generating a plasma comprises applying a radio frequency (RF) power in a range of about 3 W/in 2 to about 20 W/in 2 to the processing chamber.

Claim 136

Dependent Claim 25 words

The method of claim 115 , wherein the amorphous carbon layer has a thickness in the range of about 200 Å to about 1000 Å.

Annuity Stage	Window Opens	Payment Deadline	Surcharge Period Until	Estimated Fee	Status
3.5 Years (Year 4)	2006-06-02	2006-12-02	2007-06-03	$2000.00	Window Closed / Lapsed
7.5 Years (Year 8)	2010-06-02	2010-12-02	2011-06-03	$3760.00	Window Closed / Lapsed
11.5 Years (Year 12)	2014-06-02	2014-12-02	2015-06-03	$7700.00	Window Closed / Lapsed

Method for depositing an amorphous carbon layer

Abstract

Inventors

Bibliographic Details

Claims Analysis

References Cited (Backward Citations)

USPTO Annuity & Maintenance Windows

Assigned Categories & Tags

Assign Category Tag