EP0701283A2
Expired / Lapsed
EP
⏱️ 0.0 years remaining
Semiconductor device with amorphous carbon layer and method of fabricating the same
Assignee: NEC Corp
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Filing: 1995-09-11
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Granted: —
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Expires: 2015-09-11
Abstract
Abstract The invention provides a semiconductor device in which interlayer insulative layers are composed of amorphous carbon film. The amorphous carbon film may include fluorine (F) therein. The invention further provides a method of fabricating a semiconductor device including an interlayer insulative layer composed of amorphous carbon film including fluorine (F), the method having the step of carrying out plasma-enhanced chemical vapor deposition (PCVD) using a mixture gas including (a) at least one of CF₄, C₂F₆, C₃F₈, C₄F₈ and CHF₃, and (b) at least one of N ₂ , NO, NO ₂ , NH₃ and NF₃. The method provides amorphous carbon film having superior heat resistance and etching characteristics. By composing interlayer insulative layers of a semiconductor device of the amorphous carbon film, the semiconductor device can operate at higher speed.
Inventors
- 👤 Kazuhiko Endo
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-10-29 19:22
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/60; H10P14/68; H10P14/683; H10P14/687; H10P14/65; H10P14/6502; H10P14/6506; H10W; H10W20/00; H10W20/40; H10W20/45; H10W20/48; H10P14/63; H10P14/6326; H10P14/6328; H10P14/6334; H10P14/6336; H10P14/66; H10P14/668; H10P14/6681; H10P14/6682; H10P14/69; H10P14/6902; H10P14/692; H10P14/6921; H10P14/6922; H10P14/6924
Claims Analysis
Total Claims: 15
Claim 1
Independent Claim
15 words
A semiconductor device in which interlayer insulative layers are composed of an amorphous carbon film.
Claim 2
Dependent Claim
17 words
The semiconductor device as recited in claim 1, wherein said amorphous carbon film including fluorine (F) therein.
Claim 3
Dependent Claim
55 words
The semiconductor device as recited in claim 2, wherein content of said fluorine (F) has a distribution in a depthwise direction of said amorphous carbon film, said distribution being designed so that no fluorine (F) is present at an interface between said amorphous carbon film and an underlying layer disposed below said amorphous carbon film.
Claim 4
Dependent Claim
22 words
The semiconductor device as recited in claim 2, wherein said amorphous carbon film further including one of nitrogen (N) and silicon (Si).
Claim 5
Dependent Claim
48 words
The semiconductor device as recited in any of the preceding claims further including a buffer layer for suppressing gas discharge out of said amorphous carbon film, said buffer layer disposed between said amorphous carbon film and elements of said semiconductor device disposed adjacent to said amorphous carbon film.
Claim 6
Dependent Claim
24 words
The semiconductor device as recited in claim 5, wherein said elements of said semiconductor device includes an electrode, a wiring and a transistor section.
Claim 7
Dependent Claim
46 words
The semiconductor device as recited in claim 5 further including a transition layer interposed between said amorphous carbon film and said buffer layer, said transition layer having a composition gradually varying from a composition of said amorphous carbon film to a composition of said buffer layer.
Claim 8
Dependent Claim
23 words
The semiconductor device as recited in claim 5, wherein said buffer layer has a smaller thickness than that of said amorphous carbon film.
Claim 9
Dependent Claim
33 words
The semiconductor device as recited in claim 5, wherein said buffer layer has a thickness determined in accordance with temperature of heat treatment to be carried out in fabrication of said semiconductor device.
Claim 10
Independent Claim
66 words
A method of fabricating a semiconductor device including an interlayer insulative layer composed of an amorphous carbon film including fluorine (F), said method comprising the step of carrying out plasma-enhanced chemical vapor deposition (PCVD) using a mixture gas including (a) at least one of CF₄, C₂F₆, C₃F₈, C₄F₈ and CHF₃, and (b) at least one of N ₂ , NO, NO ₂ , NH₃ and NF₃.
Claim 11
Dependent Claim
29 words
The method as recited in claim 10, wherein said mixture gas further including (c) at least one of H ₂ , CH₄, C₂H₆, C₂H₄, C₂H ₂ , and C₃H₈.
Claim 12
Independent Claim
60 words
A method of fabricating a semiconductor device including an interlayer insulative layer composed of an amorphous carbon film including fluorine (F), said method comprising the step of carrying out plasma-enhanced chemical vapor deposition (PCVD) using a mixture gas including (a) at least one of CF₄, C₂F₆, C₃F₈, C₄F₈ and CHF₃, and (b) at least one of SiH₄, SiH₆, and SiF₄.
Claim 13
Dependent Claim
29 words
The method as recited in claim 12, wherein said mixture gas further including (c) at least one of H ₂ , CH₄, C₂H₆, C₂H₄, C₂H ₂ , and C₃H₈.
Claim 14
Independent Claim
85 words
A method of fabricating a semiconductor device including an interlayer insulative layer composed of an amorphous carbon film including fluorine (F), said method comprising the step of carrying out plasma-enhanced chemical vapor deposition (PCVD) using CxFy gas, wherein x is an integer ranging from 1 to 4 both inclusive, and y is an integer ranging from 4 to 8 both inclusive, so that a substrate on which said amorphous carbon film is to be deposited is disposed outside an area in which plasma is generated.
Claim 15
Dependent Claim
25 words
The method as recited in claim 14 further including the step of providing high-frequency electric power with said substrate while PCVD is being carried out.
References Cited (Backward Citations)
No citation records indexed.
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