US6007732A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Reduction of reflection by amorphous carbon
Assignee: Fujitsu Ltd
•
Filing: 1997-05-05
•
Granted: 1999-12-28
•
Expires: 2017-05-05
Abstract
Abstract A pattern forming method having a step of forming an amorphous carbon film on a patterning layer formed on a substrate, a step of forming a photoresist film on the amorphous carbon film, a step of selectively exposing and developing the photoresist film to form a photoresist pattern, and a step of successively dry-etching the amorphous carbon film and the patterning layer by using the photoresist film as an etching mask. Desired optical constants of an amorphous carbon film formed by sputtering can be obtained by controlling a substrate temperature and other parameters.
Inventors
- 👤 Koichi Hashimoto
- 👤 Toshiyuki Ohtsuka
- 👤 Fumihiko Shinpuku
- 👤 Daisuke Matsunaga
- 👤 Takayuki Enda
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 12:54
CPC Classifications
H; H10; H10P; H10P50/00; H10P50/71; H10P50/20; H10P50/26; H10P50/264; H10P50/266; H10P50/267; H10P50/268; H10P50/28; H10P50/286; H10P50/287; H10P76/00; H10P76/20; H10P76/204; H10P76/2041; H10P76/2043; Y; Y10; Y10S; Y10S438/00; Y10S438/942; Y10S438/948; Y10S438/952
Claims Analysis
Total Claims: 5
Claim 1
Independent Claim
74 words
A pattern forming method comprising the steps of: forming an amorphous film consisting essentially of carbon, on a patterning layer formed on a substrate; forming a photoresist film on said amorphous film: selectively exposing and developing said photoresist film to form a photoresist pattern; successively dry-etching said amorphous film and said patterning layer in one etching step using said photoresist film as an etching mask; and removing said photoresist pattern and said amorphous film.
Claim 2
Dependent Claim
74 words
A pattern forming method comprising the steps of: forming an amorphous film consisting essentially of carbon, on a patterning layer formed on a substrate; forming a photoresist film on said amorphous film: selectively exposing and developing said photoresist film to form a photoresist pattern; successively dry-etching said amorphous film and said patterning layer in one etching step using said photoresist film as an etching mask; and removing said photoresist pattern and said amorphous film.
Claim 3
Dependent Claim
42 words
A method according to claim 1, wherein said successive dry-etching step includes an etching step using an etching as in the form of plasma containing at least one of fluorine and chlorine for etching both said amorphous film and said patterning layer.
Claim 4
Dependent Claim
34 words
An etching method wherein an amorphous film consisting essentially of carbon, exposed in an opening of a resist pattern is selectively etched by using an etching gas containing chlorine in the form of plasma.
Claim 5
Dependent Claim
34 words
An etching method wherein an amorphous film consisting essentially of carbon, exposed in an opening of a resist pattern is selectively etched by using an etching gas containing chlorine in the form of plasma.
References Cited (Backward Citations)
JPS60117723A
Cited
JPS60235426A
Cited
JPS6373559A
Cited
JPH0271518A
Cited
US4975144A
Cited
US5102498A
Cited
US5437961A
Cited
JPH05114558A
Cited
JPH05114559A
Cited
JPH0590224A
Cited
US5302240A
Cited
US5240554A
Cited
US5656128A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2002-12-27 | 2003-06-28 | 2003-12-28 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2006-12-27 | 2007-06-28 | 2007-12-28 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2010-12-27 | 2011-06-28 | 2011-12-28 | $7700.00 | Window Closed / Lapsed |