US5437961A
Expired / Lapsed
US
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Method of manufacturing semiconductor device
Assignee: Toshiba Corp
•
Filing: 1994-06-21
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Granted: 1995-08-01
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Expires: 2014-06-21
Abstract
Abstract A method of manufacturing a semiconductor device is disclosed. The method comprises the steps of forming carbon layer on a light-reflective layer or a transparent layer formed on a light-reflective layer, forming a photosensitive resin layer on the carbon layer, selectively radiating light on the photosensitive resin layer, forming a photosensitive resin pattern by developing the photosensitive resin layer selectively irradiated with the light, forming a carbon pattern by etching the carbon layer using the photosensitive pattern as a mask, and forming a light-reflective pattern or a transparent layer pattern by etching the light-reflective layer using the photosensitive resin layer or the carbon pattern as a mask. When the light-reflective layer pattern is formed, the thickness of the carbon layer is set to be less than 100 nm. When the transparent layer pattern is formed, the thickness of the carbon layer is set to be 80 nm or more.
Inventors
- 👤 Hiroyuki Yano
- 👤 Haruo Okano
- 👤 Tohru Watanabe
- 👤 Keiji Horioka
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-31 15:43
CPC Classifications
G; G03; G03F; G03F7/00; G03F7/0005; H; H10; H10P; H10P76/00; H10P76/20; H10P76/204; H10P76/2041; H10P76/2043; H10W; H10W20/00; H10W20/01; H10W20/031; H10W20/063; Y; Y10; Y10S; Y10S430/00; Y10S430/151; Y10S438/00; Y10S438/942; Y10S438/948; Y10S438/95
Claims Analysis
Total Claims: 20
Claim 1
Independent Claim
95 words
A method of manufacturing a semiconductor device, comprising the steps of: forming a layer of carbon having a thickness of 38 to 78 nm on a light-reflective layer; forming a photosensitive resin layer on the carbon layer; selectively radiating light on the photosensitive resin layer; forming a photosensitive resin pattern by developing the photosensitive resin layer selectively irradiated with the light; forming a carbon pattern by etching the carbon layer using the photosensitive resin pattern as a mask; and forming a light-reflective pattern by etching the light-reflective layer using the carbon pattern as a mask.
Claim 2
Independent Claim
95 words
A method of manufacturing a semiconductor device, comprising the steps of: forming a layer of carbon having a thickness of 38 to 78 nm on a light-reflective layer; forming a photosensitive resin layer on the carbon layer; selectively radiating light on the photosensitive resin layer; forming a photosensitive resin pattern by developing the photosensitive resin layer selectively irradiated with the light; forming a carbon pattern by etching the carbon layer using the photosensitive resin pattern as a mask; and forming a light-reflective pattern by etching the light-reflective layer using the carbon pattern as a mask.
Claim 3
Dependent Claim
26 words
A method according to claim 1, wherein the carbon layer has a refractive index of 1.3 to 2.5 and an extinction coefficient of 0.3 to 1.0.
Claim 4
Dependent Claim
14 words
A method according to claim 1, wherein the carbon layer is formed by sputtering.
Claim 5
Dependent Claim
32 words
A method according to claim 1, wherein the light-reflective layer essentially consists of one material selected from the group consisting of a metal, a metal alloy, a metal silicide, and a semiconductor.
Claim 6
Dependent Claim
30 words
A method according to claim 1 wherein the light-reflective layer essentially consists of one material selected from the group consisting of Al, Ag, Cu, Mo, molybdenum silicide, and polycrystalline silicon.
Claim 7
Dependent Claim
14 words
A method according to claim 1, wherein the light-reflective pattern is a wiring layer.
Claim 8
Dependent Claim
13 words
A method according to claim 1, wherein the photosensitive resin is a photoresist.
Claim 9
Independent Claim
124 words
A method of manufacturing a semiconductor device, comprising the steps of: forming a transparent layer on a light-reflective layer; forming a layer of carbon directly on the transparent layer; forming a photosensitive resin layer on the carbon layer; selectively radiating light on the photosensitive resin layer; forming a photosensitive resin pattern by developing the photosensitive resin layer selectively irradiated with the light; forming a carbon pattern by etching the carbon layer by using the photosensitive resin pattern as a mask; and forming a transparent layer pattern by etching the transparent layer using the carbon pattern as a mask, so that a thickness d of the carbon layer, an extinction coefficient k of the carbon layer, and a wavelength λ of exposure light satisfy 0.17≦kd/λ.
Claim 10
Independent Claim
124 words
A method of manufacturing a semiconductor device, comprising the steps of: forming a transparent layer on a light-reflective layer; forming a layer of carbon directly on the transparent layer; forming a photosensitive resin layer on the carbon layer; selectively radiating light on the photosensitive resin layer; forming a photosensitive resin pattern by developing the photosensitive resin layer selectively irradiated with the light; forming a carbon pattern by etching the carbon layer by using the photosensitive resin pattern as a mask; and forming a transparent layer pattern by etching the transparent layer using the carbon pattern as a mask, so that a thickness d of the carbon layer, an extinction coefficient k of the carbon layer, and a wavelength λ of exposure light satisfy 0.17≦kd/λ.
Claim 11
Dependent Claim
19 words
A method according to claim 8, wherein the carbon layer has a thickness of not less than 80 nm.
Claim 12
Dependent Claim
18 words
A method according to claim 9, wherein the carbon layer has a thickness of 80 to 200 nm.
Claim 13
Dependent Claim
26 words
A method according to claim 9, wherein the carbon layer has a refractive index of 1.3 to 2.5 and an extinction coefficient of 0.3 to 1.0.
Claim 14
Dependent Claim
14 words
A method according to claim 8, wherein the carbon layer is formed by sputtering.
Claim 15
Dependent Claim
32 words
A method according to claim 8, wherein the light-reflective layer essentially consists of one material selected from the group consisting of a metal, a metal alloy, a metal silicide and, a semiconductor.
Claim 16
Dependent Claim
30 words
A method according to claim 8, wherein the light-reflective layer essentially consists of one material selected from the group consisting of Al, Ag, Cu, Mo, molybdenum silicide, and polycrystalline silicon.
Claim 17
Dependent Claim
13 words
A method according to claim 8, wherein the photosensitive resin is a photoresist.
Claim 18
Dependent Claim
29 words
A method according to claim 8, wherein the transparent layer essentially consists of one material selected from the group consisting of silicon dioxide, silicon nitride, and a synthetic resin.
Claim 19
Dependent Claim
16 words
A method according to claim 8, wherein the transparent layer pattern is an inter-layer insulating layer.
Claim 20
Dependent Claim
14 words
A method according to claim 8, wherein said light-reflective layer is a silicon substrate.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 1998-07-31 | 1999-01-30 | 1999-08-01 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2002-07-31 | 2003-01-30 | 2003-08-01 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2006-07-31 | 2007-01-30 | 2007-08-01 | $7700.00 | Window Closed / Lapsed |